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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN10H220LVT-13

Name: DMN10H220LVT-13
Brand: Diodes Incorporated
SKU: DMN10H220LVT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN10H220LVT-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMN10H220LVT-13.pdf

Description:: MOSFET N-CH 100V 1.87A TSOT26

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Product details

Overview

DMN10H220LVT-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TSOT26 package, featuring 220 mΩ R_DS(on) at V_GS = 10 V, 2.24 A continuous drain current at T_A = +25°C, and low input capacitance (401 pF). It delivers fast switching speed and low conduction loss for high-efficiency DC-DC converters and power management circuits.

For engineers reviewing the DMN10H220LVT-13 datasheet, DMN10H220LVT-13 pinout, DMN10H220LVT-13 application, or DMN10H220LVT-13 equivalent, key selection criteria include its 100V V_DS, 220 mΩ on-resistance at 10 V gate drive, 75 °C/W thermal resistance, TSOT26 footprint compatibility, and suitability for space-constrained power stages requiring low Q_g (8.3 nC at 10 V) and fast turn-on (6.8 ns delay).

Technical Context

This MOSFET employs planar trench-gate technology to balance low R_DS(on) and controlled gate charge, enabling efficient operation in synchronous buck converters and load switches. Its 100V breakdown voltage supports 48V bus and PoE-powered systems, while the 1.67 W power dissipation rating assumes FR-4 PCB with thermal vias.

The device integrates a body diode with 1.2 V forward voltage at 1.1 A and 17 ns reverse recovery time, supporting discontinuous conduction mode (DCM) operation. Gate threshold voltage is tightly specified at 1.0–2.5 V, ensuring reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source voltage, suitable for 48 V industrial and telecom power rails.
R_DS(on)	220 mΩ @ V_GS = 10 V - Enables <1.25 W conduction loss at 2.24 A, critical for thermally constrained designs.
I_D (continuous)	2.24 A @ T_A = +25°C - Supports medium-power load switching without active cooling on standard PCBs.
C_iss	401 pF - Low input capacitance reduces gate drive power and improves switching efficiency above 500 kHz.
Q_g	8.3 nC @ V_GS = 10 V - Enables fast turn-on with minimal driver stress; compatible with low-current gate drivers.
R_θJA	75 °C/W - Junction-to-ambient thermal resistance measured on FR-4 board with thermal vias; defines safe operating area under steady-state load.
V_GS(th)	1.0–2.5 V - Ensures full enhancement with 3.3 V microcontroller GPIO or logic-level PWM signals.

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.90 mm × 2.80 mm × 1.00 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Common return path for load current; electrically tied to PCB ground plane for thermal and EMI control.
2 (Gate)	Control input	High-impedance node requiring low-inductance gate resistor (6.8 Ω typical) to damp ringing and control dV/dt.
3 (Drain)	Power output	Switched high-side or low-side connection point; routed over large copper pour to minimize trace inductance and heating.
4 (Source)	Source terminal (dual-source)	Second source pin for enhanced current sharing and reduced package resistance; must be connected to same net as Pin 1.
5 (Drain)	Power output (dual-drain)	Second drain pin for parallel current paths; improves thermal spreading and reduces R_DS(on) contribution from bond wires.
6 (Drain)	Power output (dual-drain)	Third drain connection; enables symmetric layout in high-current switch nodes and minimizes loop area in synchronous rectifiers.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	250 mΩ - Enables direct drive from 5 V microcontrollers without level-shifting, reducing BOM count.
Fast switching speed	6.8 ns turn-on delay + 8.2 ns rise time - Supports >1 MHz DC-DC operation with minimal dead-time loss.
Low gate charge	4.1 nC at 4.5 V - Reduces gate driver power consumption and allows use of integrated FET controllers with limited drive strength.
Green packaging	Halogen- and antimony-free, <900 ppm Br/Cl, <1000 ppm Sb - Meets IPC-1752A Class 3 environmental compliance for automotive and industrial end equipment.
Body diode performance	17 ns t_rr, 9.8 nC Q_rr - Minimizes reverse recovery loss in synchronous rectifier and flyback applications.

Applications

DC-DC Converters

Power Management Functions

Use Scenario: Used as high-side switch in non-isolated buck regulators powering FPGA core voltages (1.0–1.2 V @ 3–5 A).

IC Role / Device Role / Timing Role: Primary power switch controlling energy transfer from input rail to LC filter; operates at 500 kHz–1 MHz with PWM duty cycle modulation.

Use Value: 220 mΩ R_DS(on) limits conduction loss to ≤1.1 W at 2.24 A, enabling compact thermal design without heatsink on 2-layer PCB.

Use Scenario: Integrated into USB-C PD power delivery modules for programmable 5–20 V output regulation.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback topology, replacing Schottky diode to improve efficiency at light loads.

Use Value: 17 ns reverse recovery time and low Q_rr reduce switching loss by ~35% vs. 40 V Schottky, increasing full-load efficiency from 89% to 92.5%.

Backlighting

Load Switching

Use Scenario: Drives LED strings in automotive instrument cluster backlighting (12 V input, 3–5 strings × 10 LEDs).

IC Role / Device Role / Timing Role: Constant-current sink controller with PWM dimming interface; modulates LED brightness via 1–20 kHz gate signal.

Use Value: 100 V V_DS withstands load dump transients up to 87 V, eliminating need for external TVS in ASIL-B compliant designs.

Use Scenario: Enables/disables power to peripheral modules (e.g., CAN transceivers, sensors) in industrial PLC I/O cards.

IC Role / Device Role / Timing Role: Low-side load switch with controlled slew rate to prevent inrush current and system brownout.

Use Value: 2.24 A continuous rating supports 2.5 A peak loads; low 250 mΩ R_DS(on) at 4.5 V ensures <1.6 V drop across switch during hot-swap events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H220LW-7	Same die, TSOT26 package, but rated for 2.10 A at V_GS = 4.5 V (vs. 2.24 A at 10 V); identical R_DS(on) and Q_g.	Optimized for 3.3 V logic-level drive; slightly lower ID rating reflects conservative derating at low V_GS.	Select when gate drive is fixed at 3.3 V and thermal margin is tight-no change in layout or bill of materials required.
Si2302DS-T1-GE3	60 V V_DS, 115 mΩ R_DS(on) @ 4.5 V, 2.6 A I_D; smaller Q_g (3.5 nC) but lower voltage rating.	Not suitable for 48 V or PoE+ systems due to 60 V breakdown limit; better for 5–12 V battery-powered devices.	Choose only for sub-36 V rails where lower R_DS(on) and faster switching outweigh voltage safety margin requirements.

Compared with DMN10H220LVT-13, DMN10H220LW-7 offers identical performance with tighter 3.3 V drive optimization, while Si2302DS-T1-GE3 trades 40 V headroom for lower on-resistance and gate charge-making the original part optimal for 48 V industrial power stages requiring robust transient immunity.

Availability

DMN10H220LVT-13 is available at Aetrix Electronics and suitable for DC-DC converters, power management functions, and backlighting applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for DMN10H220LVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing facilities in China, Taiwan, and the U.S.

The DMN10H220LVT belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained power conversion in industrial, computing, and automotive subsystems where low R_DS(on), fast switching, and green packaging are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The DMN10H220LVT-13 has an operating junction temperature range of –55°C to +150°C. For continuous operation, the absolute maximum is +150°C; however, sustained operation above +125°C requires derating of I_D and P_D per the thermal curves in Figure 5 and Figure 6 of the datasheet, assuming proper PCB thermal design with thermal vias.

Can this MOSFET be used with 3.3 V gate drive?

Yes-the gate threshold voltage is specified from 1.0 V to 2.5 V, and R_DS(on) is characterized at 4.5 V (250 mΩ max). At 3.3 V, the device remains enhanced but with higher on-resistance (~320–380 mΩ estimated from Figure 4); it is usable for low-duty-cycle or low-current applications, though not recommended for full 2.24 A conduction.

Is the TSOT26 package lead-free and RoHS-compliant?

Yes-DMN10H220LVT-13 uses a fully lead-free, RoHS 2-compliant (2011/65/EU) TSOT26 package with tin-finished terminals, halogen- and antimony-free molding compound, and UL 94V-0 flammability rating. Moisture sensitivity level is rated at Level 1 per J-STD-020, allowing unlimited floor life before reflow.

Does this MOSFET include an integrated ESD protection diode?

No-DMN10H220LVT-13 does not integrate dedicated ESD protection circuitry. Its gate oxide is rated for ±16 V V_GS, and gate leakage is specified at ±100 nA. External gate resistors (≥10 Ω) and series RC snubbers are recommended in high-noise environments to prevent electrostatic damage during handling and assembly.

DMN10H220LVT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.87A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 401 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.67W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMN10H220LVT-13 FAQ

1.How can I place an order for DMN10H220LVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN10H220LVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN10H220LVT-13 reliable?

The price and inventory of DMN10H220LVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H220LVT-13 is usually 5 days.

3.What payment methods are accepted for DMN10H220LVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H220LVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN10H220LVT-13?

DMN10H220LVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN10H220LVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN10H220LVT-13?

For technical support, including DMN10H220LVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H220LVT-13 requirements.

6.How does Aetrix verify that DMN10H220LVT-13 is sourced from the original manufacturer or authorized distributors?

All DMN10H220LVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H220LVT-13 meets industry standards.

7.What is the process for return or replacement of DMN10H220LVT-13?

All DMN10H220LVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H220LVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN10H220LVT-13 part is unused and in its original packaging.

Return procedure for DMN10H220LVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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