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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN10H220LVT-7

Name: DMN10H220LVT-7
Brand: Diodes Incorporated
SKU: DMN10H220LVT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN10H220LVT-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMN10H220LVT-7.pdf

Description:: MOSFET N-CH 100V 1.87A TSOT26

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Product details

Overview

DMN10H220LVT-7 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TSOT26 package, featuring 220mΩ R_DS(on) at V_GS = 10V, 2.24A continuous drain current at 25°C, and low input capacitance (401pF). It serves as a primary switching element in DC-DC converters and power management stages where high efficiency and fast turn-on/turn-off are required.

For engineers reviewing the DMN10H220LVT-7 datasheet, DMN10H220LVT-7 pinout, DMN10H220LVT-7 application, or DMN10H220LVT-7 equivalent, key selection criteria include its 100V V_DSS, 220mΩ on-resistance at 10V gate drive, TSOT26 thermal performance (R_θJA = 75°C/W), body diode forward voltage (0.77V typ), and gate charge (8.3nC at 10V).

Technical Context

This MOSFET employs planar trench-gate technology to balance low R_DS(on) and controlled gate charge, enabling efficient operation in synchronous buck converters and load-switching circuits. Its 100V breakdown rating supports 48V industrial bus and PoE-powered systems.

The device exhibits a gate threshold voltage of 1.8–2.5V, ensuring reliable turn-on with standard 3.3V or 5V logic-level drivers. Its 17ns total switching time (t_D(on) + t_r + t_D(off) + t_f) and low Crss (17pF) minimize switching losses in high-frequency (>500kHz) topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Withstands up to 100V drain-source voltage before avalanche conduction begins; suitable for 48V rail applications.
R_DS(on) max	220mΩ @ V_GS = 10V - Determines conduction loss at full load; enables <1W dissipation at 2.24A.
I_D continuous	2.24A @ T_A = 25°C - Maximum steady-state current under FR-4 PCB conditions with minimum pad layout.
C_iss	401pF - Input capacitance affects gate driver sizing and switching speed; low value eases 3.3V MCU drive.
Q_g	8.3nC @ V_GS = 10V - Total gate charge dictates energy needed per switch cycle; impacts driver power and EMI.
V_GS(th)	1.8–2.5V - Threshold range ensures compatibility with 3.3V logic without requiring level-shifting.
R_θJA	75°C/W - Junction-to-ambient thermal resistance defines temperature rise per watt on standard FR-4 board.

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin surface-mount package with exposed drain pad; 2.9mm × 2.8mm footprint, 1.0mm max height, RoHS-compliant tin finish on copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–16V gate drive; requires ≤8.3nC charge for full enhancement.
2 (S)	Source	Reference node for gate drive and current return path; tied to ground or low-side reference in buck topology.
3 (D)	Drain	High-side output node; connects to input rail or inductor; electrically tied to exposed pad for thermal conduction.
4 (D)	Drain	Second drain connection; shares same internal node as Pin 3; improves current sharing and thermal spreading.
5 (S)	Source	Secondary source terminal; reduces source inductance in high-dI/dt switching; enhances stability.
6 (G)	Gate	Redundant gate connection; lowers gate loop inductance and improves EMI behavior in high-frequency operation.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5V	250mΩ - Enables direct drive from 5V microcontrollers without gate boosting, reducing BOM count.
Fast switching	17ns total switching time - Minimizes transition losses in >500kHz DC-DC converters, improving efficiency above 90%.
Low Q_gd/Q_gs ratio	2.0nC / 1.5nC = 1.33 - Reduces Miller effect, enhancing noise immunity and enabling stable operation with high dV/dt.
Green compound packaging	Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - Meets IPC-1752A Class 3 environmental compliance for automotive and industrial use.
Moisture sensitivity	Level 1 per J-STD-020 - No bake requirement prior to reflow; simplifies manufacturing and reduces process risk.

Applications

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: Step-down conversion from 12–48V input to 3.3–5V output in industrial HMIs and embedded controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000kHz with PWM control.

Use Value: 220mΩ R_DS(on) limits conduction loss to <1.1W at 2.24A, enabling compact thermal design without heatsink.

Use Scenario: Constant-current LED string control in automotive instrument clusters and LCD backlight modules.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulating LED brightness at 1–20kHz.

Use Value: Fast 17ns switching minimizes current ripple during dimming transitions, preserving color consistency.

USB-C Power Delivery Switch

Hot-Swap Controller FET

Use Scenario: 20V/3A USB-C PD power path switching in portable docking stations and monitors.

IC Role / Device Role / Timing Role: High-side pass FET controlled by dedicated PD controller IC.

Use Value: 100V V_DSS provides 2× margin over 20V PD spec, ensuring robustness against transient overvoltage events.

Use Scenario: Inrush current limiting and fault isolation in 12V/24V industrial I/O modules and PLC backplanes.

IC Role / Device Role / Timing Role: Load switch activated by enable signal to manage power sequencing and short-circuit protection.

Use Value: Low 250mΩ R_DS(on) at 4.5V allows direct interface with 5V supervisor ICs, eliminating external level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3029LVT-7	30V V_DSS, 29mΩ R_DS(on) @ 10V, higher ID (5.8A), same TSOT26 package	Not suitable for >30V rails; better for 5–12V point-of-load converters	Select when lower conduction loss at ≤12V input is prioritized over voltage headroom.
SI2302DS-T1-GE3	20V V_DSS, 55mΩ R_DS(on) @ 4.5V, SOT-23 package, higher R_θJA (150°C/W)	Limited to ≤20V systems; less thermally robust under sustained load	Choose only for space-constrained 3.3V/5V logic-level designs where 100V rating is unnecessary.

Compared with DMN3029LVT-7 and SI2302DS-T1-GE3, DMN10H220LVT-7 uniquely delivers 100V capability with sub-250mΩ on-resistance in TSOT26, making it the only option among the three viable for 48V industrial power rails while maintaining logic-level gate drive compatibility.

Availability

DMN10H220LVT-7 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and hot-swap controllers requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for DMN10H220LVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

This part belongs to Diodes' "Logic-Level Power MOSFET" product line, engineered specifically for high-efficiency, medium-voltage switching in space-constrained industrial and consumer power supplies.

FAQ

What is the maximum safe operating junction temperature for DMN10H220LVT-7?

The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across –55°C to +150°C. Derating begins at +70°C ambient due to reduced current capability (1.79A at +70°C vs. 2.24A at +25°C), and thermal design must ensure T_J stays below 150°C under worst-case power dissipation and airflow conditions.

Can DMN10H220LVT-7 be driven directly by a 3.3V microcontroller GPIO?

Yes - its gate threshold voltage (1.8–2.5V) and 250mΩ R_DS(on) at V_GS = 4.5V allow functional switching at 3.3V, though R_DS(on) rises to ~320mΩ. For optimal efficiency, use with 5V logic or add a small gate resistor (10–47Ω) to dampen ringing without compromising rise/fall times.

Does DMN10H220LVT-7 include an integrated body diode, and what is its forward voltage?

Yes - it features an inherent parasitic body diode with typical forward voltage of 0.77V at 1.1A and 25°C. This diode supports synchronous rectification and freewheeling paths but is not optimized for reverse recovery; trr is 17ns, limiting use in high-frequency hard-switched topologies without snubbing.

What is the recommended PCB layout for thermal performance?

Diodes recommends using the AP02001 suggested pad layout: 1-inch square copper pour on bottom layer connected via ≥6 thermal vias (0.3mm diameter) under the exposed drain pad. Minimum 2oz copper on both layers is required to achieve the rated R_θJA = 75°C/W; omitting vias increases thermal resistance to ~108°C/W.

DMN10H220LVT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.87A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 401 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.67W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMN10H220LVT-7 FAQ

1.How can I place an order for DMN10H220LVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN10H220LVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN10H220LVT-7 reliable?

The price and inventory of DMN10H220LVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H220LVT-7 is usually 5 days.

3.What payment methods are accepted for DMN10H220LVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H220LVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN10H220LVT-7?

DMN10H220LVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN10H220LVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN10H220LVT-7?

For technical support, including DMN10H220LVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H220LVT-7 requirements.

6.How does Aetrix verify that DMN10H220LVT-7 is sourced from the original manufacturer or authorized distributors?

All DMN10H220LVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H220LVT-7 meets industry standards.

7.What is the process for return or replacement of DMN10H220LVT-7?

All DMN10H220LVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H220LVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN10H220LVT-7 part is unused and in its original packaging.

Return procedure for DMN10H220LVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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