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Diodes Incorporated DMN10H6D2LFDB-13
- Part No.:
- DMN10H6D2LFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN10H6D2LFDB-13.pdf
- Description:
- MOSFET 2N-CH 100V 0.27A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,604
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Product details
Overview
DMN10H6D2LFDB-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for 100V VDSS, 6Ω RDS(ON) @ VGS = 10V, and 0.27A continuous drain current at TA = +25°C. It serves as a compact, low-leakage switching element in space-constrained power management circuits.
For engineers reviewing the DMN10H6D2LFDB-13 datasheet, DMN10H6D2LFDB-13 pinout, DMN10H6D2LFDB-13 application, or DMN10H6D2LFDB-13 equivalent, key selection criteria include its dual-channel layout, 1kV ESD protection, low gate threshold (0.8–2.0V), fast switching (tF = 9.2ns), and thermal resistance of 125°C/W under enhanced PCB layout.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each with separate gate, source, and drain terminals. Its low RDS(ON) at 4.5V (10Ω) enables operation from 5V logic-level drivers without level-shifting.
The device features low input capacitance (Ciss = 41pF), fast turn-off delay (tD(OFF) = 9.7ns), and body diode recovery time of 31ns-optimized for high-frequency switching in low-power DC-DC stages and motor gate drive feedback paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - supports input rails up to 48V nominal systems with margin for transient spikes |
| RDS(ON) | 6Ω @ VGS = 10V - limits conduction loss to ≤162mW at 0.19A, enabling thermally constrained layouts |
| ID (max) | 0.27A @ TA = +25°C - suitable for sub-300mW load switching in portable electronics |
| Ciss | 41pF - reduces gate drive power requirement and improves switching efficiency above 1MHz |
| tF | 9.2ns - enables clean edge transitions in PWM-driven servo control signals |
| VGS(TH) | 0.8–2.0V - ensures reliable turn-on with 3.3V microcontroller GPIO without external biasing |
| ESD Rating | 1kV HBM - protects against handling-induced discharge during SMT assembly and board test |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm, bottom-exposed thermal pad, RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; tied to PCB ground plane via thermal pad for thermal relief |
| Pin 2 (G1) | Gate of Channel 1 | Logic-level control input; requires <0.6nC total gate charge for full turn-on at 4.5V |
| Pin 3 (D1) | Drain of Channel 1 | High-side switching node; rated for 100V blocking and 0.27A continuous current |
| Pin 4 (D2) | Drain of Channel 2 | Independent high-side node; electrically isolated from D1-enables dual-path load control |
| Pin 5 (G2) | Gate of Channel 2 | Second logic-level input; identical threshold and capacitance to G1 for matched timing |
| Pin 6 (S2) | Source of Channel 2 | Separate return path; allows floating or independently biased source configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | 0.8–2.0V range ensures robust turn-on from 3.3V I/O without external level shifters |
| Fast switching speed | 9.2ns fall time and 9.7ns turn-off delay support >5MHz PWM in compact DC-DC regulators |
| Low input/output leakage | IDSS ≤1.0μA at 100V and IGSS ≤±10μA enable battery-powered standby modes with <1μA quiescent drain |
| ESD protection | 1kV HBM rating eliminates need for external TVS on gate lines in handheld device designs |
| Thermal performance | RθJA = 125°C/W with 1-inch² copper pour-supports 0.7W dissipation in ambient ≤70°C |
Applications
| Small Servo Motor Control | Power MOSFET Gate Drivers |
|---|---|
|
Use Scenario: Driving bidirectional current to 10g–50g RC servo motors in drone gimbals and robotic joints. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling H-bridge direction and brake states with independent gate timing. Use Value: 0.8V VGS(TH) ensures full turn-on from 3.3V MCU outputs; 31ns body diode recovery prevents shoot-through during direction reversal. |
Use Scenario: Level-shifting and buffering gate drive signals for high-voltage power MOSFETs in SMPS half-bridge stages. IC Role / Device Role / Timing Role: Low-capacitance buffer stage isolating controller IC from high-dV/dt power node transients. Use Value: 41pF Ciss minimizes gate drive loading; 100V VDSS withstands Miller-induced voltage spikes during switching transitions. |
| Low-Power Load Switching | USB-C Power Path Management |
|
Use Scenario: Enabling/disabling auxiliary rails (e.g., sensor bias, LED backlight) in wearables and IoT endpoints. IC Role / Device Role / Timing Role: Compact dual-load switch providing independent ON/OFF control with minimal board area. Use Value: U-DFN2020-6 footprint saves >60% area vs. SO-8; 1kV ESD tolerance eliminates need for discrete gate protection diodes. |
Use Scenario: Controlling VBUS path and CC line termination in USB-C receptacles for portable chargers and docking stations. IC Role / Device Role / Timing Role: Dual-channel switch managing VBUS enable and CC pull-up/down resistor selection. Use Value: Matched RDS(ON) between channels ensures consistent voltage drop across both paths; 0.27A rating meets USB-C 3A sink requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LFG-7 | 30V VDSS, 26mΩ RDS(ON) @ 4.5V, higher current (3.8A), larger U-DFN2020-6 footprint | Targeted at 5–12V systems requiring lower conduction loss; unsuitable for 48V input rails | Select when system voltage ≤15V and RDS(ON) <30mΩ is critical for efficiency |
| SI2302DS-T1-BE3 | 20V VDSS, 80mΩ RDS(ON) @ 4.5V, SOT-23 package, no ESD rating specified | Cost-optimized for ultra-low-power always-on functions; lacks 1kV ESD and 100V rating | Choose only for ≤5V battery-backed circuits where size and cost outweigh reliability requirements |
Compared with DMN3026LFG-7 and SI2302DS-T1-BE3, the DMN10H6D2LFDB-13 uniquely balances 100V capability, 1kV ESD protection, and U-DFN2020-6 miniaturization-making it the only option among the three qualified for 48V industrial sensors and USB-C PD accessories requiring robust transient immunity.
Availability
DMN10H6D2LFDB-13 is available at Aetrix Electronics and suitable for small servo motor control, power MOSFET gate drivers, and low-power load switching requiring stable component supply across production lifecycles.
Supply support for DMN10H6D2LFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial and consumer markets.
This part belongs to Diodes' low-voltage dual MOSFET product line, engineered for miniaturized, high-efficiency switching in battery-powered and space-constrained applications where thermal density and ESD resilience are critical.
FAQ
What is the maximum junction temperature and thermal derating behavior of DMN10H6D2LFDB-13?
The device operates from –55°C to +150°C junction temperature. With RθJA = 125°C/W on a 1-inch² copper pour, it delivers 0.7W at TA = +25°C but must be derated linearly to zero at TA = +85°C. Figure 7 in the datasheet shows RDS(ON) increases by ~2.2× from –55°C to +150°C at fixed VGS.
Can DMN10H6D2LFDB-13 be used in synchronous rectification applications?
No-it lacks an integrated Schottky body diode with optimized QRR and tRR for synchronous rectification. Its body diode has tRR = 31ns and QRR = 19nC, which introduces significant reverse recovery loss above 500kHz. It is intended for low-frequency switching or gate driving-not high-efficiency secondary-side rectification.
Is the thermal pad on the U-DFN2020-6 (Type B) package electrically connected to any terminal?
No-the exposed thermal pad is not internally connected to any pin or channel. It must be soldered to a dedicated PCB thermal land (not tied to GND or other nets) to achieve the 125°C/W RθJA rating. The datasheet specifies no electrical function for the pad; its sole purpose is thermal conduction.
How does the dual-channel configuration affect gate drive sequencing and cross-conduction risk?
Channels are fully isolated-no shared source, drain, or substrate. Cross-conduction is physically impossible unless external circuitry shorts D1–S2 or D2–S1. Gate drive sequencing remains independent; no inter-channel timing constraints exist. Each channel behaves identically to a single discrete MOSFET.
DMN10H6D2LFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 270mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 50V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN10H6D2LFDB-13 FAQ
1.How can I place an order for DMN10H6D2LFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H6D2LFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H6D2LFDB-13 reliable?
The price and inventory of DMN10H6D2LFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H6D2LFDB-13 is usually 5 days.
3.What payment methods are accepted for DMN10H6D2LFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H6D2LFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN10H6D2LFDB-13?
DMN10H6D2LFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN10H6D2LFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H6D2LFDB-13?
For technical support, including DMN10H6D2LFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H6D2LFDB-13 requirements.
6.How does Aetrix verify that DMN10H6D2LFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMN10H6D2LFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H6D2LFDB-13 meets industry standards.
7.What is the process for return or replacement of DMN10H6D2LFDB-13?
All DMN10H6D2LFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H6D2LFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H6D2LFDB-13 part is unused and in its original packaging.
Return procedure for DMN10H6D2LFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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