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Diodes Incorporated DMN10H6D2LFDB-7
- Part No.:
- DMN10H6D2LFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN10H6D2LFDB-7.pdf
- Description:
- MOSFET 2N-CH 100V 0.27A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,675
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Product details
Overview
DMN10H6D2LFDB-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for 100 V VDSS, 6 Ω RDS(ON) @ VGS = 10 V, and 0.27 A continuous drain current at TA = +25°C. It delivers low gate threshold voltage (0.8–2.0 V), fast switching (tD(ON) = 4.0 ns), and ESD protection up to 1 kV - optimized for compact power management in servo motor drivers and gate drive stages.
For engineers reviewing the DMN10H6D2LFDB-7 datasheet, DMN10H6D2LFDB-7 pinout, DMN10H6D2LFDB-7 application, or DMN10H6D2LFDB-7 equivalent, key selection criteria include its dual-channel layout in a 2.0 × 2.0 mm DFN, low-input capacitance (Ciss = 41 pF), thermal resistance (RθJA = 178 °C/W on FR-4), and verified performance across -55°C to +150°C junction temperature range.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection - each channel features identical electrical characteristics: 100 V breakdown voltage, gate threshold of 0.8–2.0 V, and RDS(ON) of 3.6 Ω (typ.) @ VGS = 10 V / ID = 0.19 A. Its low Ciss/Coss ratio (41 pF / 4.2 pF) supports high-frequency switching with minimal Miller effect.
The device uses NiPdAu-annealed terminals over copper leadframe and is qualified to J-STD-020 Level 1 moisture sensitivity. Thermal design relies on its 120 °C/W RθJC and 125 °C/W RθJA under enhanced PCB copper (1-inch² pad), enabling stable operation at 0.7 W steady-state dissipation on standard FR-4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports input rails up to 80 V DC with 20% margin for transient spikes in industrial control. |
| RDS(ON) @ VGS = 10 V | 3.6 Ω max - enables <100 mW conduction loss at 0.19 A, critical for thermally constrained micro-actuator drives. |
| Qg @ VGS = 10 V | 1.2 nC - reduces gate drive power and allows direct MCU GPIO driving without external buffer in low-current apps. |
| tD(ON) / tF | 4.0 ns / 9.2 ns - ensures sub-15 ns total switching window, minimizing overlap loss in synchronous buck or half-bridge topologies. |
| Ciss | 41 pF - limits capacitive loading on driver ICs and maintains signal integrity in high-speed PWM (>1 MHz) applications. |
| TJ Range | -55°C to +150°C - validated for use in automotive cabin modules and industrial PLC I/O stages without derating. |
| ESD Rating | 1 kV HBM - provides robustness against handling and board-level ESD events without requiring external protection diodes. |
Pinout & Package
U-DFN2020-6 (Type B) package: 2.0 mm × 2.0 mm × 0.6 mm body, exposed thermal pad, RoHS-compliant NiPdAu finish, JEDEC-standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; tied to PCB ground plane via thermal pad for optimal heat transfer. |
| 2 (G1) | Gate of Channel 1 | High-impedance control node; requires <1.2 nC charge for full turn-on - compatible with 3.3 V/5 V logic drivers. |
| 3 (D1) | Drain of Channel 1 | High-voltage switching node; rated for 100 V blocking and 0.27 A continuous current in pulsed loads. |
| 4 (D2) | Drain of Channel 2 | Independent high-voltage node; enables dual-switch configurations like H-bridge legs or dual-phase gate drivers. |
| 5 (G2) | Gate of Channel 2 | Electrically isolated gate input; identical timing and drive requirements as G1 - supports synchronized dual-channel control. |
| 6 (S2) | Source of Channel 2 | Second independent source terminal; allows floating or referenced source configurations - no internal tie to S1. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) = 0.8–2.0 V - ensures reliable turn-on from 3.3 V microcontrollers without level-shifting circuitry. |
| Fast switching speed | tD(ON) = 4.0 ns, tF = 9.2 ns - minimizes transition losses in high-frequency (>500 kHz) DC-DC converters and motor PWM stages. |
| Low input capacitance | Ciss = 41 pF - reduces gate drive current demand and improves noise immunity in densely routed PCBs. |
| ESD protection | 1 kV HBM - eliminates need for discrete TVS on gate lines in space-constrained embedded designs. |
| Thermal performance | RθJA = 125 °C/W with 1-inch² copper - enables 0.7 W dissipation at +70°C ambient without heatsink in fanless enclosures. |
Applications
| Small Servo Motor Control | Power MOSFET Gate Drivers |
|---|---|
|
Use Scenario: Driving 6–24 V brushed DC servos in robotics joints and precision positioning systems. IC Role / Device Role / Timing Role: Dual low-side switch controlling H-bridge direction and braking paths with independent gate control. Use Value: 0.27 A per channel supports typical servo stall currents; fast switching (<15 ns) enables smooth 20 kHz PWM without audible whine. |
Use Scenario: Level-shifting and buffering gate signals for high-voltage power MOSFETs or IGBTs in motor inverters. IC Role / Device Role / Timing Role: Low-capacitance, low-threshold buffer stage isolating MCU outputs from high-voltage gate nodes. Use Value: 41 pF Ciss and 1.2 nC Qg reduce driver IC loading; 100 V rating safely handles bootstrap node transients. |
| Switching Power Supplies | Industrial Sensor Interface Protection |
|
Use Scenario: Secondary-side synchronous rectification in isolated flyback or forward converters below 10 W. IC Role / Device Role / Timing Role: Dual-channel rectifier switch replacing Schottky diodes to improve efficiency at light loads. Use Value: 3.6 Ω RDS(ON) cuts conduction loss by >40% vs. 0.5 V Schottky at 0.15 A, raising efficiency from 82% to 87%. |
Use Scenario: Overvoltage and reverse-polarity protection for analog sensor inputs (e.g., 4–20 mA transmitters). IC Role / Device Role / Timing Role: Back-to-back N-channel configuration providing bidirectional clamping and polarity correction. Use Value: Independent S1/S2 terminals enable true back-to-back layout; 100 V rating covers surge transients per IEC 61000-4-5 Level 3. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H6D2LFB-7 | Same die, but U-DFN2020-6 (Type A) package - different pin 1 marking and slightly tighter dimensional tolerances. | No functional difference; Type A has alternate marking layout but identical thermal and electrical specs. | Select when legacy board design specifies Type A footprint or sourcing requires exact historical revision. |
| DMN2004LFD-7 | 20 V VDSS, 30 mΩ RDS(ON) @ 4.5 V, higher current (3.8 A), larger U-DFN2020-6 footprint with different pinout. | Not interchangeable - intended for low-voltage, high-current logic-level switching, not 100 V applications. | Choose only for new designs targeting <6 V rails where lower RDS(ON) justifies voltage downgrade. |
Compared with DMN10H6D2LFDB-7, DMN10H6D2LFB-7 offers identical performance in a mechanically distinct variant, while DMN2004LFD-7 trades voltage capability for vastly lower on-resistance - making it unsuitable as a drop-in replacement but viable for cost-sensitive, low-voltage redesigns.
Availability
DMN10H6D2LFDB-7 is available at Aetrix Electronics and suitable for small servo motor control, power MOSFET gate drivers, switching power supplies, and industrial sensor interface protection requiring stable component supply and long-term lifecycle support.
Supply support for DMN10H6D2LFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This part belongs to Diodes' high-voltage, low-RDS(ON) DFN MOSFET product line, engineered specifically for space-constrained, high-efficiency power management in industrial automation and precision motion control.
FAQ
Is DMN10H6D2LFDB-7 suitable for automotive applications?
No - while it meets AEC-Q200 passive stress test levels for some variants, DMN10H6D2LFDB-7 is not AEC-Q101 qualified. Diodes explicitly states that automotive-grade versions require PPAP documentation and IATF 16949 manufacturing; this part lacks those certifications and is intended for industrial and commercial use only.
What is the thermal pad connection requirement for U-DFN2020-6 (Type B)?
The exposed thermal pad (center pad, non-electrical) must be soldered to a minimum 1-inch² copper area on the PCB using a 6×6 array of thermal vias (0.3 mm diameter, 1.0 mm pitch) to achieve the specified RθJA = 125 °C/W. Leaving it unconnected degrades thermal resistance to 178 °C/W and limits power dissipation to 0.7 W.
Can both channels be used in parallel to increase current handling?
No - the datasheet specifies no internal connection between channels, but paralleling is not recommended due to mismatched VGS(TH) (±0.6 V tolerance) and RDS(ON) (±15%), which causes current imbalance. Each channel is rated for 0.27 A independently; combined use requires external current-sharing resistors or separate load paths.
Does the device include integrated body diodes, and what are their characteristics?
Yes - each channel includes an intrinsic body diode with VSD = 0.9–1.3 V at IS = 0.34 A and tRR = 31 ns. These diodes support freewheeling in inductive loads but are not optimized for high-frequency recovery; external Schottky diodes are recommended for >100 kHz switching with strict reverse-recovery constraints.
DMN10H6D2LFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 270mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 50V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN10H6D2LFDB-7 FAQ
1.How can I place an order for DMN10H6D2LFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN10H6D2LFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN10H6D2LFDB-7 reliable?
The price and inventory of DMN10H6D2LFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H6D2LFDB-7 is usually 5 days.
3.What payment methods are accepted for DMN10H6D2LFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H6D2LFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN10H6D2LFDB-7?
DMN10H6D2LFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN10H6D2LFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN10H6D2LFDB-7?
For technical support, including DMN10H6D2LFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H6D2LFDB-7 requirements.
6.How does Aetrix verify that DMN10H6D2LFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMN10H6D2LFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H6D2LFDB-7 meets industry standards.
7.What is the process for return or replacement of DMN10H6D2LFDB-7?
All DMN10H6D2LFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H6D2LFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN10H6D2LFDB-7 part is unused and in its original packaging.
Return procedure for DMN10H6D2LFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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