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Diodes Incorporated DMN10H700S-13

Part No.:
DMN10H700S-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMN10H700S-13.pdf
Description:
MOSFET N-CH 100V 700MA SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,058

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Product details

Overview

DMN10H700S-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SOT23 package, delivering 700mΩ RDS(ON) at VGS = 10V and 0.70A continuous drain current at 25°C. It features low gate threshold voltage (2.0–4.0V), fast switching (tD(ON) = 2.5ns), and AEC-Q101 qualification for high-reliability power management in space-constrained DC-DC converters.

For engineers reviewing the DMN10H700S-13 datasheet, DMN10H700S-13 pinout, DMN10H700S-13 application, or DMN10H700S-13 equivalent, this page provides verified electrical parameters, thermal behavior under pulsed operation, junction-to-ambient resistance (303°C/W), body diode conduction capability (0.6A), and real-world design implications of its 235pF input capacitance and 4.6nC total gate charge.

Technical Context

This MOSFET operates as a low-side switch with enhancement-mode logic-level gate drive compatibility, supporting direct interface to 3.3V/5V microcontrollers. Its 100V VDSS rating enables use in buck converters up to 48V input rails, while its 0.4W steady-state power dissipation limits continuous operation to ≤0.56A at 70°C ambient without heatsinking.

The device integrates a monolithic body diode with 0.9–1.1V forward voltage at 1.5A, enabling synchronous rectification or freewheeling in flyback and boost topologies. Its 88°C/W junction-to-case thermal resistance confirms suitability for PCB-mounted thermal relief via copper pour under the drain pad.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100V - supports input voltages up to 48V DC-DC stages with 2× safety margin
RDS(ON)700mΩ @ VGS=10V - yields ≤0.5W conduction loss at 0.7A, critical for thermally limited SOT23 layouts
ID (25°C)0.70A - maximum continuous current before thermal derating begins at ambient >25°C
VGS(TH)2.0–4.0V - ensures reliable turn-on with 3.3V logic outputs without gate boosting
Ciss235pF - determines gate drive strength requirement; ~1.5mA avg. current needed for 10ns switching
Qg4.6nC - defines minimum gate driver output capability for <100ns transition times
RθJA303°C/W - requires ≥1in² 2oz copper pad to sustain 0.4W dissipation at +70°C ambient

Pinout & Package

Package: SOT23 - surface-mount plastic case, 0.006g weight, UL 94V-0 rated, moisture sensitivity level 1, lead-free matte tin plating over Alloy 42 leadframe.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main current path from source to loadConnected to high-side node in low-side switch configuration; requires thermal pad connection to PCB copper
Gate (G)Control electrode for channel formationHigh-impedance input requiring <100nA leakage budget; sensitive to ESD per ±20V rating
Source (S)Reference node for gate drive and current returnMust be tied to system ground or common reference; body diode anode connects here

Key Features

FeatureDesign Value
Low gate threshold voltage2.0–4.0V range enables direct 3.3V MCU GPIO control without level-shifting circuitry
Low input capacitance235pF Ciss reduces gate drive power and speeds up switching transitions in battery-powered systems
Fast switching speed2.5ns turn-on delay + 1.1ns rise time minimizes switching losses in high-frequency (>500kHz) DC-DC designs
AEC-Q101 qualificationValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing
SOT23 footprintCompact 2.9mm × 1.3mm outline allows placement in dense power sections where QFN or SO-8 are impractical

Applications

Battery-Powered DC-DC ConvertersAutomotive Body Control Modules

Use Scenario: Step-down regulation from 12V/24V battery to 3.3V/5V for infotainment and sensor subsystems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck converter topology operating at 300–1000kHz.

Use Value: 700mΩ RDS(ON) and 4.6nC Qg jointly reduce conduction + switching losses by ~18% versus legacy 1Ω SOT23 MOSFETs.

Use Scenario: Load switching for LED lighting, window motors, and HVAC actuators in passenger compartments.

IC Role / Device Role / Timing Role: High-reliability discrete power switch controlled by CAN/LIN microcontroller GPIO pins.

Use Value: AEC-Q101 qualification and -55°C to +150°C operating range ensure functional stability across vehicle life cycle.

Portable Medical InstrumentationIndustrial Sensor Node Power Management

Use Scenario: Isolated power sequencing and battery backup switching in handheld diagnostic devices.

IC Role / Device Role / Timing Role: Load switch enabling/disabling subsystems during sleep/wake cycles with <1µA off-state leakage.

Use Value: 1µA IDSS at 100V and 100nA IGSS preserve battery charge over multi-week standby periods.

Use Scenario: Power gating for LoRaWAN and NB-IoT transceivers in remote environmental monitoring nodes.

IC Role / Device Role / Timing Role: Controlled enable/disable of RF front-end and ADC supply rails using microcontroller PWM signals.

Use Value: 2.0V VGS(TH) min guarantees turn-on even with brown-out conditions down to 2.8V VCC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2004LK-7Lower RDS(ON) (300mΩ), higher ID (2.0A), same SOT23 package but different pinout (G-S-D vs D-G-S)Requires PCB layout revision due to reversed gate/source terminals; unsuitable for drop-in replacementSelect only if redesigning layout and needing higher current handling with identical footprint area
AO3400Higher RDS(ON) (44mΩ typ), higher Qg (17nC), same VDSS/VGS(TH), non-AEC-Q101Lacks automotive qualification; higher gate charge increases driver stress in high-frequency operationPrefer for cost-sensitive consumer electronics where AEC-Q101 is not mandated and thermal headroom exists

Compared with DMN2004LK-7 and AO3400, the DMN10H700S-13 offers optimal balance of AEC-Q101 compliance, low gate charge for efficient 3.3V drive, and validated thermal performance in minimal SOT23 area-making it uniquely suited for space- and reliability-constrained industrial and automotive edge nodes.

Availability

DMN10H700S-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relays, and DC-DC converters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for DMN10H700S-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMN10H700S belongs to Diodes' "Logic-Level Power MOSFET" product line, engineered specifically for compact, high-efficiency power switching in portable, automotive, and industrial applications where gate drive voltage headroom is limited.

FAQ

What is the maximum safe operating temperature for DMN10H700S-13 in continuous conduction mode?

The junction temperature must not exceed +150°C. With RθJA = 303°C/W and PD = 0.4W (steady state), the maximum ambient temperature is +30°C without additional copper cooling. Using a 1-inch square 2oz copper pad (RθJA = 239°C/W), ambient can reach +50°C at full 0.4W dissipation.

Can DMN10H700S-13 be used as a high-side switch?

No-it is optimized as a low-side switch. The SOT23 package lacks isolated source connection required for high-side bootstrap or floating gate drive. Its gate threshold and RDS(ON) are specified relative to source, making high-side implementation impractical without external level-shifting circuitry.

Does the body diode support reverse recovery in synchronous rectification?

Yes-the body diode has tRR = 22ns and QRR = 15nC at 100V/1.8A, enabling use in discontinuous conduction mode (DCM) flyback or boost converters. However, its 0.9–1.1V VSD is higher than Schottky alternatives, so efficiency gains are most pronounced above 100kHz switching frequencies.

Is the DMN10H700S-13 compatible with lead-free reflow profiles?

Yes-its lead-free matte tin finish and JEDEC-compliant SOT23 package meet IPC/JEDEC J-STD-020 moisture sensitivity level 1. Standard Pb-free reflow peak temperature (260°C) and dwell time (≤60 seconds) are fully supported without delamination or solder joint integrity issues.

DMN10H700S-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
700mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4.6 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
235 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
400mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMN10H700S-13 FAQ

1.How can I place an order for DMN10H700S-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN10H700S-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN10H700S-13 reliable?

The price and inventory of DMN10H700S-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN10H700S-13 is usually 5 days.

3.What payment methods are accepted for DMN10H700S-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN10H700S-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN10H700S-13?

DMN10H700S-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN10H700S-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN10H700S-13?

For technical support, including DMN10H700S-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN10H700S-13 requirements.

6.How does Aetrix verify that DMN10H700S-13 is sourced from the original manufacturer or authorized distributors?

All DMN10H700S-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN10H700S-13 meets industry standards.

7.What is the process for return or replacement of DMN10H700S-13?

All DMN10H700S-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN10H700S-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN10H700S-13 part is unused and in its original packaging.

Return procedure for DMN10H700S-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN10H700S-13 Tags

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