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Diodes Incorporated DMN1150UFL3-7
- Part No.:
- DMN1150UFL3-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
DMN1150UFL3-7.pdf
- Description:
- MOSFET 2N-CH 12V 2A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,996
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Product details
Overview
DMN1150UFL3-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a 1.3 mm² X2-DFN1310-6 (Type B) package, rated for 12 V VDSS, 150 mΩ RDS(ON) @ 4.5 V VGS, and 2.0 A continuous drain current at +25°C. It features ultra-low gate threshold (0.35–1.0 V), ESD-protected gate, and AEC-Q101 qualification-used in space-constrained motor control and backlighting power stages.
For engineers reviewing the DMN1150UFL3-7 datasheet, DMN1150UFL3-7 pinout, DMN1150UFL3-7 application, or DMN1150UFL3-7 equivalent, key selection criteria include low-voltage gate drive compatibility (VGS(TH) ≤ 1.0 V), thermal resistance under FR-4 layout (RθJA = 320 °C/W), and dual-channel integration for half-bridge or load-switch topologies.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single ultra-thin (0.35 mm profile), lead-free DFN package with NiPdAu-plated terminals. Its low RDS(ON) at 2.5 V gate drive (185 mΩ) enables operation from 3.3 V logic rails, while fast switching (tF = 19 ns, tD(OFF) = 44 ns) supports high-frequency PWM dimming and motor commutation.
The device includes integrated gate protection diodes per channel and exhibits stable on-resistance over temperature (±15% variation from −55°C to +150°C at VGS = 4.5 V). Its 115 pF CISS and 23 pF CRSS support efficient gate driving with minimal Miller-induced shoot-through risk in synchronous configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Supports input rails up to 12 V without avalanche stress in automotive body electronics or USB-powered systems. |
| RDS(ON) @ 4.5 V | 150 mΩ max - Enables <150 mW conduction loss at 1 A, critical for thermally constrained LED drivers. |
| ID (continuous) | 2.0 A @ +25°C - Sustains 2 A DC load in compact PCB layouts using minimum pad copper (2 oz FR-4). |
| VGS(TH) | 0.35–1.0 V - Compatible with 1.8 V/3.3 V microcontroller GPIOs without level-shifting circuitry. |
| QG | 1.4 nC - Allows full turn-on with <1 µC gate charge, reducing driver IC power consumption in battery-operated devices. |
| RθJA | 320 °C/W - Defines thermal derating to 1.6 A at +70°C ambient on standard PCB layout per datasheet Note 5. |
| CRSS | 23 pF - Limits Miller feedback during high dv/dt switching, improving noise immunity in motor gate-drive applications. |
Pinout & Package
Package: X2-DFN1310-6 (Type B), 1.3 mm × 1.0 mm × 0.35 mm, bottom-exposed thermal pad, RoHS-compliant NiPdAu finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Common source node for first N-MOSFET; electrically tied to exposed thermal pad for enhanced heat dissipation. |
| 2 (G1) | Gate of Channel 1 | Control terminal for first MOSFET; ESD-protected with internal diode to S1. |
| 3 (D1) | Drain of Channel 1 | High-side or low-side switch node; isolated from other channel's drain (no internal connection). |
| 4 (D2) | Drain of Channel 2 | Independent drain for second MOSFET; enables dual independent switches or complementary half-bridge configuration. |
| 5 (G2) | Gate of Channel 2 | Separate gate control for second channel; identical threshold and drive requirements as G1. |
| 6 (S2) | Source of Channel 2 | Source node for second MOSFET; not internally connected to S1-supports floating or independently biased sources. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.3 mm² area - Saves >60% board space vs. SO-8 dual MOSFETs, enabling miniaturized wearable and IoT power modules. |
| Low-profile package | 0.35 mm height - Fits under 0.4 mm Z-height shields in slim display backlight assemblies and portable medical sensors. |
| AEC-Q101 qualified | −55°C to +150°C operation - Validated for automotive cabin electronics including HVAC actuators and LED interior lighting. |
| ESD-protected gate | ±10 µA IGSS max at ±6 V - Withstands 2 kV HBM ESD events without external clamping, simplifying ESD design in consumer USB peripherals. |
| Halogen- and antimony-free | <900 ppm Br+Cl, <1000 ppm Sb - Meets IPC-1752A Tier 2 reporting requirements for green electronics compliance in EU medical equipment. |
Applications
| Motor Control | LED Backlighting |
|---|---|
|
Use Scenario: Driving 12 V brushed DC motors in automotive seat adjusters and HVAC damper actuators. IC Role / Device Role / Timing Role: Dual low-side switch controlling direction and PWM speed via independent gate signals. Use Value: 150 mΩ RDS(ON) at 4.5 V ensures <300 mW total conduction loss at 2 A, minimizing thermal rise in sealed actuator housings. |
Use Scenario: Dynamic brightness control of white LED strings in automotive instrument clusters and infotainment displays. IC Role / Device Role / Timing Role: High-frequency PWM dimming switch operating at 1–20 kHz with fast tF = 19 ns fall time. Use Value: Low QG (1.4 nC) reduces gate driver power by >40% vs. comparable 2.5 V-threshold MOSFETs, extending battery life in portable diagnostic tools. |
| Power Management | Load Switching |
|
Use Scenario: Dual-rail power sequencing in industrial sensor nodes with separate 3.3 V and 5 V domains. IC Role / Device Role / Timing Role: Independent enable-controlled power switches with low VGS(TH) ensuring reliable turn-on from 1.8 V supervisor outputs. Use Value: Matched channel characteristics (RDS(ON) tolerance <15%) ensure balanced current sharing and predictable startup timing across rails. |
Use Scenario: Hot-swap protection and inrush limiting in USB-C peripheral docking stations. IC Role / Device Role / Timing Role: Dual-channel load switch with controlled slew rate enabled by gate capacitance (CISS = 115 pF) and low RDS(ON). Use Value: 0.35 mm profile allows placement directly beneath USB-C connectors, eliminating routing congestion in 6-layer mobile dock PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LFD-7 | Higher VDSS (20 V), higher RDS(ON) (200 mΩ @ 4.5 V), same X2-DFN1310-6 package | Better suited for 15–19 V input systems (e.g., PoE-powered cameras); less efficient at 12 V due to higher conduction loss | Select when system input may exceed 12 V and margin against overvoltage transients is required. |
| AOB2012L | Same 12 V rating but larger 2×2 mm DFN package, lower RDS(ON) (110 mΩ @ 4.5 V), no AEC-Q101 qualification | Offers better thermal performance (RθJA = 120 °C/W) but lacks automotive reliability validation | Prefer for cost-sensitive industrial power supplies where AEC-Q101 is not mandated and board space permits larger footprint. |
Compared with DMN2004LFD-7 and AOB2012L, the DMN1150UFL3-7 uniquely balances ultra-compact size, automotive qualification, and sub-1.0 V gate threshold-making it optimal for space- and voltage-constrained applications like automotive interior lighting and portable medical sensors where both footprint and 3.3 V logic compatibility are non-negotiable.
Availability
DMN1150UFL3-7 is available at Aetrix Electronics and suitable for motor control, LED backlighting, and power management applications requiring stable component supply, AEC-Q101 reliability, and ultra-small form factor.
Supply support for DMN1150UFL3-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.
The DMN1150UFL3-7 belongs to Diodes' X2-DFN ultra-compact MOSFET product line, engineered specifically for space-constrained, high-reliability applications in automotive, industrial, and portable electronics where low-voltage gate drive and thermal efficiency are critical.
FAQ
What is the maximum junction temperature for DMN1150UFL3-7?
The absolute maximum junction temperature is +150°C, validated per AEC-Q101 stress testing. Operation above this limit risks permanent degradation of gate oxide integrity and threshold voltage shift. Thermal design must ensure TJ remains below 150°C under worst-case ambient and power dissipation conditions, using the specified RθJA = 320 °C/W value for standard FR-4 layout.
Can DMN1150UFL3-7 be used in a half-bridge configuration?
Yes-its independent D1/S1/G1 and D2/S2/G2 terminals allow implementation as a high-side/low-side pair. However, no internal bootstrap diode or level shifter is included; external gate drive circuitry must provide appropriate voltage translation for the high-side gate, especially when VDD exceeds 4.5 V to maintain sufficient VGS margin.
Is the thermal pad electrically connected to any pin?
No-the exposed thermal pad (pin 7, not numbered in 6-pin count) is electrically isolated and intended solely for thermal conduction. It must be soldered to a dedicated PCB copper pour connected to system ground or left floating per thermal design requirements; no electrical connection to S1, S2, or any other terminal exists per package construction.
Does DMN1150UFL3-7 support 1.8 V logic-level gate drive?
Yes-its guaranteed VGS(TH) range (0.35–1.0 V) ensures reliable turn-on with 1.8 V gate drive, delivering RDS(ON) ≤ 210 mΩ at 1 A. This enables direct interfacing with 1.8 V microcontrollers without level shifters, though conduction loss increases ~40% versus 4.5 V drive-verify thermal margin at full load.
DMN1150UFL3-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 2A
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 115pF @ 6V
- Power - Max:
- 390mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1310-6 (Type B)
DMN1150UFL3-7 FAQ
1.How can I place an order for DMN1150UFL3-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN1150UFL3-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN1150UFL3-7 reliable?
The price and inventory of DMN1150UFL3-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN1150UFL3-7 is usually 5 days.
3.What payment methods are accepted for DMN1150UFL3-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN1150UFL3-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN1150UFL3-7?
DMN1150UFL3-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN1150UFL3-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN1150UFL3-7?
For technical support, including DMN1150UFL3-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN1150UFL3-7 requirements.
6.How does Aetrix verify that DMN1150UFL3-7 is sourced from the original manufacturer or authorized distributors?
All DMN1150UFL3-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN1150UFL3-7 meets industry standards.
7.What is the process for return or replacement of DMN1150UFL3-7?
All DMN1150UFL3-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN1150UFL3-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN1150UFL3-7 part is unused and in its original packaging.
Return procedure for DMN1150UFL3-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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