Diodes Incorporated DMN1250UFEL-7

Overview

DMN1250UFEL-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET array integrating eight identical low-voltage switches in a single U-QFN1515-12 package, with R_DS(ON) = 280 mΩ at V_GS = 4.5 V, V_DSS = 12 V, and continuous drain current of 2.0 A at 25°C - designed for compact load switching in multi-rail power management ICs and portable battery-powered systems.

For engineers reviewing the DMN1250UFEL-7 datasheet, DMN1250UFEL-7 pinout, DMN1250UFEL-7 application, or DMN1250UFEL-7 equivalent, key selection criteria include its common-source 8-channel topology, ultra-small 1.5 mm × 1.5 mm footprint, low gate charge (1.3–1.9 nC), thermal resistance (100 °C/W on 2 oz copper), and compliance with RoHS 3, halogen-free, and lead-free requirements.

Technical Context

This device implements eight independent N-channel MOSFETs sharing a common source terminal, enabling parallel or individually controlled switching paths in space-constrained DC-DC converter auxiliary rails, LED driver bias networks, and multi-sensor interface power gating. Its 12 V V_DSS rating and 0.4–1.0 V gate threshold support direct interfacing with 1.8 V/3.3 V logic controllers without level shifting.

Thermal performance is optimized for high-density layouts: R_θJA drops from 177 °C/W (standard FR-4) to 100 °C/W with 2 oz copper, and normalized R_DS(ON) variation remains ≤1.6× across –55°C to +150°C junction temperature - critical for automotive cabin modules and industrial edge nodes operating under wide ambient swings.

Key Specifications

Pinout & Package

Package: U-QFN1515-12 - 1.5 mm × 1.5 mm, 12-terminal, bottom-exposed thermal pad, lead-free matte tin finish, JEDEC-compliant Level 1 moisture sensitivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar multi-channel N-channel MOSFET switching applications.

Compared with DMN2058UFA-7 and FDMA1023NZ, the DMN1250UFEL-7 uniquely balances ultra-compact size (1.5 mm²), lowest gate charge (1.3–1.9 nC), and tight R_DS(ON) tolerance (280–450 mΩ) - making it optimal for next-gen portable electronics where PCB real estate and battery runtime are co-constrained.

Availability

DMN1250UFEL-7 is available at Aetrix Electronics and suitable for USB-C port controllers, multi-sensor wearable subsystems, and automotive cabin control modules requiring stable component supply, long-term lifecycle assurance, and traceable green-material compliance.

Supply support for DMN1250UFEL-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection devices for consumer, industrial, and automotive markets.

The DMN1250UFEL-7 belongs to Diodes' Ultra-Small Signal MOSFET product line, engineered specifically for miniaturized multi-rail power switching in space- and power-constrained applications such as portable medical devices and IoT edge nodes.

FAQ

What is the maximum safe operating temperature for DMN1250UFEL-7?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation from –55°C to +150°C. With R_θJA = 100°C/W on 2 oz copper, sustained 1.25 W power dissipation will reach this limit - design must ensure ambient + self-heating stays below 150°C using thermal vias and copper pour.

Can DMN1250UFEL-7 be used in high-frequency PWM applications?

Yes - its low Q_g (1.3–1.9 nC) and fast switching times (t_D(ON) = 1.9–2.7 ns, t_F = 1.0 ns) support PWM frequencies up to 10 MHz in low-duty-cycle bias control. However, layout parasitics dominate above 5 MHz; keep gate traces short and use local 100 nF decoupling at each gate.

How are the eight channels configured internally?

The eight N-channel MOSFETs share one common source terminal (exposed thermal pad) and are grouped into four pairs, each controlled by one gate (G1–G4). Drain terminals D1–D8 are fully isolated - no internal connection exists between any drains or gates beyond their assigned pair.

Is the exposed pad electrically connected to the source?

Yes - the exposed pad is the sole common source terminal (S) and must be soldered to a solid PCB ground plane. It is not isolated or floating; omitting thermal pad connection violates the datasheet's minimum pad layout and degrades R_θJA by >40%, risking thermal runaway at rated current.