Diodes Incorporated DMN12M3UCA6-7

Overview

DMN12M3UCA6-7 from Diodes Incorporated is a dual-N-channel enhancement-mode MOSFET in a 6-terminal CSP package, optimized for low R_DS(ON) (2.36 mΩ @ V_GS = 3.8 V) and high-current load switching up to 24.4 A at +25°C, with 14.5 V source-source breakdown voltage and integrated ESD protection on gate terminals - deployed in battery protection circuits and portable power management systems.

For engineers reviewing the DMN12M3UCA6-7 datasheet, DMN12M3UCA6-7 pinout, DMN12M3UCA6-7 application, or DMN12M3UCA6-7 equivalent, key selection criteria include ultra-low-profile packaging (0.11 mm height), thermal resistance (R_θJA = 50.7 °C/W under recommended layout), dual-source configuration for current sharing, and AEC-Q101 readiness for automotive-grade reliability assessment.

Technical Context

This device integrates two independent N-channel MOSFETs in a single X4-DSN3118-6 chip-scale package, sharing no internal connection between channels - each channel exhibits matched threshold voltage (V_GS(TH) = 0.35–1.4 V), low gate charge (Q_g = 45.7–68.6 nC), and fast switching dynamics (t_D(ON) = 1005–1508 ns).

Its design targets high-density DC/DC and battery path control where footprint minimization (3.05 mm × 1.77 mm) and thermal efficiency are critical; the NiPdAu terminal finish ensures robust solderability per MIL-STD-202, Method 208, while J-STD-020 Level 1 moisture sensitivity supports standard reflow processes.

Key Specifications

Pinout & Package

Package: X4-DSN3118-6 - ultra-thin (0.11 mm), 3.05 mm × 1.77 mm chip-scale package with NiPdAu-plated terminals and J-STD-020 Level 1 moisture sensitivity rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel load switch applications.

Compared with DMN12M3UCA6-7, the -13 variant offers identical performance with larger reels for throughput optimization, while DMN10H3D0L-7 trades dual-channel integration for slightly lower gate drive demand but doubles footprint and interconnect complexity in dual-path designs.

Availability

DMN12M3UCA6-7 is available at Aetrix Electronics and suitable for battery protection, USB-C power delivery, and wireless charging case designs requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for DMN12M3UCA6-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, space-constrained power switching in portable and battery-powered systems - emphasizing low R_DS(ON), minimal gate charge, and robust packaging for automated assembly.

FAQ

What is the maximum continuous current rating per channel at +70°C ambient?

At T_A = +70°C, the DMN12M3UCA6-7 supports 19.6 A per channel when V_GS = 4.5 V, based on thermal derating from its 24.4 A rating at +25°C and R_θJA = 50.7 °C/W under specified PCB layout conditions.

Does this MOSFET require external gate resistors for typical 3.3 V microcontroller drive?

No external gate resistor is required for standard 3.3 V GPIO drive, as the device's V_GS(TH) starts at 0.35 V and reaches full enhancement well below 3.3 V; however, a 10 Ω series resistor is recommended to dampen ringing in high-speed switching applications above 1 MHz.

Can the two channels be paralleled to double current capacity?

Paralleling channels is not recommended due to mismatched threshold voltages (0.35–1.4 V range) and lack of internal current-sharing features; independent control is intended, and simultaneous use requires separate gate drive signals and thermal isolation to avoid imbalance-induced hot spots.

Is the X4-DSN3118-6 package compatible with standard reflow profiles for lead-free soldering?

Yes - the device is rated J-STD-020 Level 1, meaning it can withstand peak reflow temperatures up to 260°C for ≤60 seconds without preconditioning; its NiPdAu terminal finish ensures reliable wetting and joint integrity using standard SAC305 or SN100C profiles.