Diodes Incorporated DMN12M7UCA10-7
- Part No.:
- DMN12M7UCA10-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 10-SMD, No Lead
- Datasheet:
-
DMN12M7UCA10-7.pdf
- Description:
- MOSFET 2N-CH 20.2A X4-DSN3015-10
- Quantity:
- Payment:

- Shipping:

Inventory:4,670
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Product details
Overview
DMN12M7UCA10-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a 10-terminal CSP package (X4-DSN3015-10), rated for 12 V VSSS, 2.3 mΩ RSS(ON) @ VGS = 3.8 V, and 20.2 A continuous source current at TA = +25°C. It serves as a low-profile load switch or battery protection device in compact portable electronics.
For engineers reviewing the DMN12M7UCA10-7 datasheet, DMN12M7UCA10-7 pinout, DMN12M7UCA10-7 application, or DMN12M7UCA10-7 equivalent, key selection criteria include ultra-low on-resistance at low gate drive (≤3.8 V), 0.11 mm height for space-constrained PCBs, ESD-protected gate, and AEC-Q101 readiness for automotive-grade reliability assessment.
Technical Context
This dual MOSFET integrates two independent N-channel channels in a single chip-scale package with shared thermal path and isolated source terminals. Each channel features a gate threshold voltage of 0.5–1.4 V and supports logic-level drive down to 2.5 V, enabling direct interface with 3.3 V microcontrollers.
The device uses a trench-gate process optimized for RSS(ON) vs. Qg trade-off: typical total gate charge is 35.7 nC at VSS = 6 V, with Ciss = 3039 pF and Crss = 141 pF - supporting fast switching while minimizing Miller-induced shoot-through risk in synchronous configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VSSS | 12 V - Maximum blocking voltage per channel; suitable for single-cell Li-ion (4.2 V) and dual-cell (8.4 V) battery systems with margin. |
| RSS(ON) Typ | 2.3 mΩ @ VGS = 3.8 V - Enables <100 mW conduction loss at 6 A per channel, critical for thermal management in sealed enclosures. |
| IS Max | 20.2 A @ TA = +25°C - Sustained current capability under standard FR-4 layout; derates to 16.1 A at +70°C ambient. |
| Qg | 35.7 nC - Total gate charge determines driver strength requirement; compatible with low-power GPIO-driven gate drivers. |
| TJ Range | −55°C to +150°C - Extended junction temperature range supports operation in automotive cabin and industrial edge nodes. |
| RθJA | 74.4°C/W (min pad) - Thermal resistance enables 1.73 W power dissipation with proper PCB copper area, not 171.9°C/W (standard FR-4). |
Pinout & Package
Package: X4-DSN3015-10 - Chip-scale package measuring 2.98 mm × 1.49 mm × 0.11 mm, with NiPdAu-plated terminals and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1, S2, S4, S7 | Source 1 | Low-impedance connection to Channel 1 source; four parallel pads reduce trace resistance and improve current sharing. |
| G1 | Gate 1 | Control terminal for Channel 1; ESD-protected input requiring ≤±8 V gate-source voltage. |
| S3, S5, S6, S9 | Source 2 | Independent source node for Channel 2; electrically isolated from Source 1 for dual-switch topologies. |
| G2 | Gate 2 | Separate control for Channel 2; allows asynchronous or complementary switching without cross-talk. |
| S8, S10 | Common Drain / Power Rail | Shared drain connection for both channels; used in high-side switch or OR-ing configurations with external routing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.11 mm height enables integration beneath displays or batteries in smartphones and wearables. |
| Dual independent channels | Two fully isolated N-MOSFETs allow redundant load switching or independent power domain control in PMIC subsystems. |
| Logic-level gate drive | Operates down to VGS = 2.5 V with RSS(ON) ≤ 2.93 mΩ - eliminates need for gate boosters in 3.3 V systems. |
| ESD-protected gate | HBM rating ≥2 kV (implied by "ESD Protection of Gate" in Features) - reduces handling sensitivity during SMT assembly. |
| Green, RoHS-compliant | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); compliant with EU RoHS 2015/863/EU and IATF 16949 manufacturing. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Preventing overcurrent and reverse polarity in lithium-ion battery packs for power tools and medical handhelds. IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as back-to-back switch to block bidirectional fault current while enabling charging/discharging paths. Use Value: 2.3 mΩ RSS(ON) minimizes voltage drop across protection FETs, preserving battery runtime and reducing thermal stress during 15 A peak loads. |
Use Scenario: Enabling/disabling 5–20 V power rails in USB-C PD sink devices such as docking stations and monitors. IC Role / Device Role / Timing Role: High-side load switch controlling VBUS delivery with fast turn-on (<880 ns delay) and low quiescent current leakage (<1 µA). Use Value: 0.11 mm height allows placement under USB-C connector footprint; dual channels support independent VBUS and VCONN switching. |
| Smartphone Power Management | Automotive Body Control Module (BCM) |
|
Use Scenario: Managing power to camera modules, fingerprint sensors, and NFC transceivers in space-limited smartphone mainboards. IC Role / Device Role / Timing Role: Low-voltage load switch isolating peripherals during sleep mode; controlled by AP GPIOs at 1.8 V/3.3 V logic levels. Use Value: Gate threshold of 0.8 V typical ensures reliable turn-on with weak-drive MCU outputs; 1000 ppm antimony limit meets mobile OEM green material specs. |
Use Scenario: Driving LED lighting zones and small solenoids in door modules and seat controls within AEC-Q101-qualified BCMs. IC Role / Device Role / Timing Role: Dual N-FET used in half-bridge configuration for PWM dimming or bidirectional motor control with integrated freewheeling path. Use Value: −55°C to +150°C operating range supports under-hood and cabin environments; PPAP-capable manufacturing ensures supply continuity for Tier-1 programs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H550LQ-7 | Higher RSS(ON) (5.5 mΩ @ 4.5 V), larger 2.0×2.0 mm DFN package, single-channel only. | Lacks dual-channel integration; requires two devices for same functionality, increasing board area and BOM count. | Choose when higher voltage rating (20 V) is needed and board space permits discrete implementation. |
| AOB12301L | 12 V rating, 2.1 mΩ RDS(ON), but 3.3×3.3 mm TDFN-8 package; no CSP footprint or 0.11 mm height. | Not suitable for ultra-thin designs; lacks ESD protection specification and AEC-Q101 qualification path. | Prefer where thermal performance dominates over thickness, and automotive qualification is not required. |
Compared with DMN12M7UCA10-7, DMN10H550LQ-7 trades lower integration and higher on-resistance for wider voltage headroom, while AOB12301L offers marginally better RDS(ON) at the cost of 3× height and no automotive qualification pathway - making DMN12M7UCA10-7 optimal for space- and reliability-critical dual-switch applications.
Availability
DMN12M7UCA10-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery load switching, and smartphone power management requiring stable component supply across high-mix, low-volume production runs.
Supply support for DMN12M7UCA10-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This device belongs to Diodes' X4-series ultra-thin CSP MOSFET product line, engineered specifically for miniaturized battery-powered systems demanding sub-0.15 mm height, low RDS(ON), and automotive-grade reliability.
FAQ
What is the maximum continuous current per channel at +70°C ambient?
At TA = +70°C, DMN12M7UCA10-7 supports 16.1 A continuous source current per channel when mounted on FR-4 with 1 inch² copper area (2 oz). This derating reflects thermal limits imposed by RθJA = 74.4°C/W under minimum recommended pad layout, not package intrinsic capability.
Does this part support gate drive from a 1.8 V microcontroller?
No - the gate threshold voltage ranges from 0.5 V to 1.4 V, but RSS(ON) rises sharply below VGS = 2.5 V (6.1 mΩ max at 2.5 V). Reliable low-resistance switching requires ≥3.1 V gate drive; 1.8 V is insufficient for functional operation.
Is the X4-DSN3015-10 package compatible with standard reflow profiles?
Yes - the package has Moisture Sensitivity Level 1 per J-STD-020 and is qualified for Pb-free reflow up to 260°C peak temperature. Its NiPdAu finish ensures solderability per MIL-STD-202, Method 208, and supports standard Type 3 or Type 4 solder paste printing.
Can DMN12M7UCA10-7 be used in automotive applications?
Yes - Diodes states it is suitable for automotive applications requiring AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing. While the base part is not pre-qualified, Diodes offers change-controlled versions meeting AEC-Q101 Rev D for stress testing and automotive release.
DMN12M7UCA10-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 10-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 20.2A (Ta)
- Rds On (Max) @ Id, Vgs:
- 2.75mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 1.11mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X4-DSN3015-10
DMN12M7UCA10-7 FAQ
1.How can I place an order for DMN12M7UCA10-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN12M7UCA10-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN12M7UCA10-7 reliable?
The price and inventory of DMN12M7UCA10-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN12M7UCA10-7 is usually 5 days.
3.What payment methods are accepted for DMN12M7UCA10-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN12M7UCA10-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN12M7UCA10-7?
DMN12M7UCA10-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN12M7UCA10-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN12M7UCA10-7?
For technical support, including DMN12M7UCA10-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN12M7UCA10-7 requirements.
6.How does Aetrix verify that DMN12M7UCA10-7 is sourced from the original manufacturer or authorized distributors?
All DMN12M7UCA10-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN12M7UCA10-7 meets industry standards.
7.What is the process for return or replacement of DMN12M7UCA10-7?
All DMN12M7UCA10-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN12M7UCA10-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN12M7UCA10-7 part is unused and in its original packaging.
Return procedure for DMN12M7UCA10-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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