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Diodes Incorporated DMN13H750S-13
- Part No.:
- DMN13H750S-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMN13H750S-13.pdf
- Description:
- MOSFET N-CH 130V 1A SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:8,936
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Product details
Overview
DMN13H750S-13 from Diodes Incorporated is a 130V N-channel enhancement-mode MOSFET in SOT23 package, optimized for high-efficiency power management. It delivers RDS(ON) = 0.75 Ω @ VGS = 10 V, 1.0 A continuous drain current at +25°C, and supports fast switching with tF = 1.7 ns and Qg = 5.6 nC - used in DC-DC converters and solid-state relay drivers.
For engineers reviewing the DMN13H750S-13 datasheet, DMN13H750S-13 pinout, DMN13H750S-13 application, or DMN13H750S-13 equivalent, this page provides verified electrical parameters, thermal performance data, SOT23 terminal mapping, and AEC-Q101-qualified alternatives for battery-powered and automotive-grade power control designs.
Technical Context
This MOSFET employs planar silicon process technology to achieve low gate threshold voltage (VGS(TH) = 2.0–4.0 V) and minimized input capacitance (Ciss = 231 pF), enabling direct drive from low-voltage logic controllers. Its body diode exhibits VSD = 0.8–1.2 V at 1.0 A, supporting synchronous rectification and flyback recovery.
The device operates across –55°C to +150°C junction temperature range with RθJA = 163°C/W (steady-state, FR-4 board), and maintains RDS(ON) stability up to 125°C (normalized drift <1.6× at TJ = 150°C). It is rated for pulsed drain current of 3.3 A (10 µs, ≤1% duty).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 130 V - Withstands up to 130 V drain-source blocking voltage before avalanche conduction. |
| RDS(ON) | 0.75 Ω @ VGS = 10 V, ID = 2.0 A - Enables low conduction loss in 12–48 V power rails. |
| ID (continuous) | 1.0 A @ TA = +25°C - Supports compact load switching without external heatsinking. |
| Qg | 5.6 nC - Reduces gate drive power and enables efficient PWM operation up to 1 MHz. |
| tF | 1.7 ns - Minimizes switching transition time to reduce dynamic losses in high-frequency converters. |
| TJ range | –55°C to +150°C - Qualified for under-hood automotive and industrial ambient environments. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics reliability. |
Pinout & Package
SOT23-3 surface-mount plastic package (JEDEC TO-236AB), 0.009 g weight, UL 94V-0 flammability rating, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for channel conduction | Connected to ground or low-side reference; forms body diode anode. |
| 2 (Gate) | Control electrode for channel inversion | Low-threshold (2.7 V typ) enables direct drive from 3.3 V/5 V microcontrollers. |
| 3 (Drain) | Main current-carrying terminal | High-voltage node (up to 130 V); electrically isolated from package tab (no thermal pad). |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) = 2.7 V (typ) - Ensures reliable turn-on with 3.3 V logic without level-shifting. |
| Fast switching speed | tD(OFF) = 6.6 ns, tF = 1.7 ns - Reduces switching losses in >500 kHz DC-DC topologies. |
| Low input capacitance | Ciss = 231 pF - Lowers gate drive current demand and improves EMI profile. |
| AEC-Q101 qualification | Stress-tested per automotive reliability standard - Validated for engine control, lighting, and body electronics. |
| Green RoHS compliance | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - Meets EU environmental directives. |
Applications
| DC-DC Buck Converter | Battery Protection Circuit |
|---|---|
|
Use Scenario: Step-down regulation in portable medical monitors powered by Li-ion batteries. IC Role / Device Role: Low-side synchronous rectifier switch in 12 V → 3.3 V converter stage. Use Value: RDS(ON) = 0.75 Ω minimizes I²R loss at 1 A load, extending runtime by >8% vs. higher-RDS(ON) alternatives. |
Use Scenario: Overcurrent cutoff in USB-C power delivery modules for laptops. IC Role / Device Role: Load switch controlling VBUS path during fault detection. Use Value: Fast 1.7 ns fall time ensures sub-100 ns response to OCP signals, preventing IC damage during short circuits. |
| Automotive LED Headlamp Driver | Industrial Solenoid Actuator |
|
Use Scenario: PWM dimming control for adaptive front-lighting systems (AFS). IC Role / Device Role: High-side or low-side current sink for LED string current regulation. Use Value: AEC-Q101 qualification and –55°C to +150°C operation ensure stable performance across vehicle thermal cycles. |
Use Scenario: 24 V solenoid control in factory automation valves. IC Role / Device Role: Solid-state replacement for electromechanical relays in PLC output stages. Use Value: 3.3 A pulsed rating handles solenoid inrush current; low Coss = 19 pF reduces voltage overshoot during turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | RDS(ON) = 0.025 Ω @ 10 V, but VDSS = 30 V only | Not suitable for 130 V bus applications; limited to ≤36 V systems | Select only when lower on-resistance is critical and voltage stress remains <30 V. |
| SI2302DS-T1-GE3 | VDSS = 20 V, RDS(ON) = 0.08 Ω @ 4.5 V, no AEC-Q101 | Lacks automotive qualification and high-voltage capability | Acceptable for consumer-grade 5–12 V logic-level switching where qualification is not required. |
Compared with DMN3025LSD-13 and SI2302DS-T1-GE3, the DMN13H750S-13 uniquely balances 130 V rating, AEC-Q101 compliance, and logic-level gate drive - making it the only viable option for 48–120 V automotive and industrial power switches requiring reliability and voltage margin.
Availability
DMN13H750S-13 is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, and automotive LED drivers requiring stable component supply across production lifecycles.
Supply support for DMN13H750S-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers in Asia, Europe, and the US.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered for high-voltage, low-RDS(ON) switching in space-constrained power management systems - particularly targeting automotive, industrial, and portable equipment.
FAQ
What is the maximum safe operating voltage for DMN13H750S-13?
The absolute maximum drain-source voltage (VDSS) is 130 V DC. Operation above this value risks avalanche breakdown and irreversible damage. Derating to ≤104 V is recommended for long-term reliability in repetitive switching applications, especially at elevated temperatures or with voltage transients.
Can DMN13H750S-13 be driven directly from a 3.3 V microcontroller GPIO?
Yes - its typical gate threshold voltage is 2.7 V, and it achieves RDS(ON) ≤ 0.85 Ω at VGS = 6.0 V. At 3.3 V, it partially enhances and delivers ~0.6 A continuous current (per transfer curves), sufficient for low-duty-cycle or low-current loads like indicator LEDs or small solenoids.
Does DMN13H750S-13 include an integrated body diode, and what are its characteristics?
Yes - it features a monolithic intrinsic body diode with forward voltage VSD = 0.8–1.2 V at 1.0 A and reverse recovery charge QRR = 21 nC. This enables freewheeling in inductive loads and asynchronous rectification, though external Schottky diodes are preferred for high-efficiency synchronous designs.
Is thermal derating required when operating at ambient temperatures above +70°C?
Yes - continuous drain current drops from 1.0 A at +25°C to 0.8 A at +70°C (steady-state). For operation at +85°C ambient, maximum ID must be reduced to ~0.7 A using RθJA = 163°C/W and TJ(MAX) = 150°C. PCB copper area and airflow significantly impact actual thermal margin.
DMN13H750S-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 130 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 750mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 231 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 770mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMN13H750S-13 FAQ
1.How can I place an order for DMN13H750S-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN13H750S-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN13H750S-13 reliable?
The price and inventory of DMN13H750S-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN13H750S-13 is usually 5 days.
3.What payment methods are accepted for DMN13H750S-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN13H750S-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN13H750S-13?
DMN13H750S-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN13H750S-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN13H750S-13?
For technical support, including DMN13H750S-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN13H750S-13 requirements.
6.How does Aetrix verify that DMN13H750S-13 is sourced from the original manufacturer or authorized distributors?
All DMN13H750S-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN13H750S-13 meets industry standards.
7.What is the process for return or replacement of DMN13H750S-13?
All DMN13H750S-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN13H750S-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN13H750S-13 part is unused and in its original packaging.
Return procedure for DMN13H750S-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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