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Diodes Incorporated DMN13M9UCA6-7
- Part No.:
- DMN13M9UCA6-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-SMD, No Lead
- Datasheet:
-
DMN13M9UCA6-7.pdf
- Description:
- MOSFET 2N-CH X3-DSN3518-6
- Quantity:
- Payment:
- Shipping:
Inventory:7,136
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Product details
Overview
DMN13M9UCA6-7 from Diodes Incorporated is a dual-N-channel enhancement-mode MOSFET in a 6-pin CSP package (X3-DSN3518-6), optimized for ultra-low on-resistance (2.5 mΩ @ VGS = 3.8 V) and high-current load switching in space-constrained battery management systems. It supports 23.6 A continuous source current at 25°C, features integrated ESD protection on gate terminals, and operates across –55°C to +150°C junction temperature range.
For engineers reviewing the DMN13M9UCA6-7 datasheet, DMN13M9UCA6-7 pinout, DMN13M9UCA6-7 application, or DMN13M9UCA6-7 equivalent, this device is selected for high-efficiency, low-profile load switch and battery protection circuits where thermal performance, footprint minimization (<3.54 mm × 1.77 mm), and gate-drive compatibility with 2.5–4.5 V logic are critical design requirements.
Technical Context
This dual-N-channel MOSFET integrates two independent power switches sharing common source connections per channel (Pins 1/3/4 and 4/6), enabling compact dual-load control without external paralleling. Its low RSS(ON) is achieved via advanced trench-gate process and copper-clip CSP packaging, reducing parasitic inductance and improving transient response.
The device exhibits gate threshold voltage of 0.5–1.3 V and total gate charge of 56.5 nC at VSS = 6 V, supporting fast switching in DC-DC output stages and smart battery disconnects. Thermal resistance RθJA is 46.8°C/W under recommended FR-4 PCB layout, enabling >2.6 W power dissipation at ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VSSS | 12 V - Maximum source-source blocking voltage; defines safe operating range in 3.3–12 V battery systems. |
| RSS(ON) | 2.5 mΩ @ VGS = 3.8 V - Enables <100 mW conduction loss at 20 A, critical for thermal budget in sealed battery packs. |
| IS (max) | 23.6 A @ TA = 25°C - Supports high-current load switching without derating in compact layouts. |
| Qg | 56.5 nC - Determines gate driver strength requirement; compatible with standard 1-A peak drivers at ≤1 MHz switching. |
| Ciss | 3315 pF - Impacts high-frequency gate drive losses and EMI filtering needs in fast-switching applications. |
| TJ range | –55°C to +150°C - Qualified for automotive cabin and industrial battery environments without derating. |
Pinout & Package
Package: X3-DSN3518-6 (Type B), ultra-thin chip-scale package measuring 3.54 mm × 1.77 mm × 0.21 mm, with NiPdAu-plated solderable terminals and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 | Primary source terminal for Channel 1; electrically tied to Pin 3 and Pin 4 for low-inductance parallel connection. |
| 2 | Gate 1 | Independent gate control input for Channel 1; ESD-protected, rated ±8 V. |
| 3 | Source 1 | Redundant source pad for Channel 1; improves current sharing and thermal spreading on PCB. |
| 4 | Source 2 | Shared source node for Channel 2; also connected to Pin 1 and Pin 3 to enable dual-channel common-source configuration. |
| 5 | Gate 2 | Independent gate control input for Channel 2; fully isolated from Gate 1 for asynchronous switching. |
| 6 | Source 2 | Redundant source pad for Channel 2; enhances thermal conduction and reduces bond wire inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RSS(ON) | 2.5 mΩ @ 3.8 V enables >98% efficiency in 5–10 A battery discharge paths with minimal heatsinking. |
| Dual-channel integration | Two independent N-MOSFETs in one CSP reduce board area by ~40% vs. discrete dual-SOIC solutions. |
| ESD-protected gates | HBM rating ≥2 kV allows direct handling and assembly without special ESD controls during SMT. |
| Green, lead-free construction | Halogen- and antimony-free, RoHS 3 compliant (Br+Cl <1500 ppm, Sb <1000 ppm) for global automotive compliance. |
| Low-profile footprint | 0.21 mm height permits use in slim portable electronics and stacked battery modules with strict Z-axis limits. |
Applications
| Battery Protection IC Interface | Smart Load Switch |
|---|---|
Use Scenario: Integrated into lithium-ion battery packs to isolate cells during overvoltage, overtemperature, or short-circuit events. IC Role / Device Role / Timing Role: Acts as primary power FET controlled by protection IC's gate driver outputs; responds within microseconds to fault signals. Use Value: Low RSS(ON) minimizes voltage drop during normal operation, preserving pack capacity; dual-channel enables separate charge/discharge path control. |
Use Scenario: Used in USB-C PD power delivery modules to enable/disable 5–20 V power rails based on negotiation status. IC Role / Device Role / Timing Role: Functions as main pass transistor in high-side load switch topology; driven directly by microcontroller GPIO or dedicated load switch controller. Use Value: 2.5 mΩ RSS(ON) limits voltage drop to <50 mV at 20 A, ensuring tight regulation at sink-side loads. |
| Wireless Charging Transmitter | Industrial Portable Equipment Power Path |
Use Scenario: Controls power delivery to resonant tank circuit in Qi-compliant 15 W wireless charging transmitters. IC Role / Device Role / Timing Role: Serves as synchronous rectifier or half-bridge switch; operated in PWM mode at 100–200 kHz with body diode conduction managed. Use Value: Low Ciss (3315 pF) and Qg (56.5 nC) reduce switching losses and gate drive power consumption. |
Use Scenario: Implements hot-swap and inrush limiting in handheld test equipment with dual-battery backup. IC Role / Device Role / Timing Role: Configured as back-to-back N-FET pair for bidirectional blocking; gate-controlled to limit inrush current during plug-in. Use Value: Dual-channel symmetry simplifies layout and ensures matched turn-on characteristics between series-connected FETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H5D0L-7 | RSS(ON) = 4.2 mΩ @ 4.5 V; larger DFN2020-6 package (2.0 mm × 2.0 mm); higher RθJA = 65°C/W. | Less suitable for ultra-thin designs; requires more PCB area but offers higher surge current rating (ISM = 120 A). | Select when higher ruggedness and lower gate charge (Qg = 32 nC) outweigh footprint constraints. |
| SI7157DP-T1-GE3 | Single-channel 30 V N-FET; RDS(on) = 3.5 mΩ @ 4.5 V; SO-8 package; no integrated ESD protection. | Requires two devices and additional gate drivers for dual-path control; lacks CSP thermal performance. | Choose only if legacy SO-8 footprint compatibility or higher VDS rating is mandatory. |
Compared with DMN10H5D0L-7 and SI7157DP-T1-GE3, DMN13M9UCA6-7 delivers superior power density and thermal efficiency in battery protection and compact load switching, trading off surge margin and package compatibility for minimal height and footprint-ideal where Z-axis clearance and board area are primary constraints.
Availability
DMN13M9UCA6-7 is available at Aetrix Electronics and suitable for battery management, load switching, and battery protection applications requiring stable component supply, consistent parametric performance, and long-term lifecycle support in portable and automotive-adjacent designs.
Supply support for DMN13M9UCA6-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, energy-efficient components for power management, signal integrity, and protection.
This device belongs to Diodes' PowerMOS™ CSP portfolio, engineered specifically for space-constrained, thermally demanding battery and load-switch applications where traditional packages cannot meet mechanical or thermal targets.
FAQ
What is the maximum continuous current rating for DMN13M9UCA6-7 at 70°C ambient?
At TA = +70°C, the continuous source current is 18.9 A when VGS = 4.5 V and 13.4 A when VGS = 2.5 V, as specified in the Absolute Maximum Ratings table. These values assume mounting on FR-4 PCB with minimum recommended pad layout and account for thermal derating due to reduced heat dissipation at elevated ambient temperatures.
Does DMN13M9UCA6-7 require external gate resistors for typical load-switch operation?
No external gate resistor is required for basic on/off load switching at frequencies below 10 kHz. The device's low Qg (56.5 nC) and gate capacitance allow clean edge transitions using standard microcontroller GPIOs. However, a 10–47 Ω series resistor is recommended for EMI suppression and ringing control in high-speed PWM applications above 100 kHz.
Can Pins 1, 3, and 4 be used simultaneously as a single high-current source node?
Yes - Pins 1, 3, and 4 are internally connected as Source 1, and Pins 4 and 6 as Source 2. This multi-pad source configuration is designed for low-inductance, high-current routing and improved thermal conduction. PCB layout must connect all three pads (1/3/4) to the same net to realize full current-handling capability and minimize localized heating.
Is DMN13M9UCA6-7 qualified to AEC-Q101 for automotive use?
No - the datasheet explicitly states that automotive qualification (AEC-Q100/101/200) and PPAP capability require direct engagement with Diodes Incorporated or its authorized representatives. Standard DMN13M9UCA6-7 is not AEC-Q101 certified; customers needing automotive-grade assurance must request formal qualification documentation and change-controlled manufacturing evidence.
DMN13M9UCA6-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 56.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3315pF @ 6V
- Power - Max:
- 2.67W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X3-DSN3518-6
DMN13M9UCA6-7 FAQ
1.How can I place an order for DMN13M9UCA6-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN13M9UCA6-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN13M9UCA6-7 reliable?
The price and inventory of DMN13M9UCA6-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN13M9UCA6-7 is usually 5 days.
3.What payment methods are accepted for DMN13M9UCA6-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN13M9UCA6-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN13M9UCA6-7?
DMN13M9UCA6-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN13M9UCA6-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN13M9UCA6-7?
For technical support, including DMN13M9UCA6-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN13M9UCA6-7 requirements.
6.How does Aetrix verify that DMN13M9UCA6-7 is sourced from the original manufacturer or authorized distributors?
All DMN13M9UCA6-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN13M9UCA6-7 meets industry standards.
7.What is the process for return or replacement of DMN13M9UCA6-7?
All DMN13M9UCA6-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN13M9UCA6-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN13M9UCA6-7 part is unused and in its original packaging.
Return procedure for DMN13M9UCA6-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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