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Diodes Incorporated DMN14M8UFDF-13
- Part No.:
- DMN14M8UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN14M8UFDF-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V U-DFN2020-6
- Quantity:
- Payment:
- Shipping:
Inventory:8,810
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Product details
Overview
DMN14M8UFDF from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 6.0 mΩ RDS(ON) at VGS = 4.5V and 14.7A continuous drain current at TA = +25°C. It serves as a low-voltage power switch in compact DC-DC converters and load-switching circuits requiring high efficiency and minimal board area.
For engineers reviewing the DMN14M8UFDF datasheet, DMN14M8UFDF pinout, DMN14M8UFDF application, or DMN14M8UFDF equivalent, key selection criteria include its 0.6 mm profile, 4 mm² footprint, low 0.45–1.2 V gate threshold voltage, 1.9 W thermal-rated power dissipation on 2 oz copper, and AEC-Q101 readiness for automotive-grade designs.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(ON) while maintaining fast switching performance: tD(ON) = 4.7 ns, tF = 19 ns, and Qg = 14.6 nC at VGS = 4.5V. Its body diode exhibits VSD = 0.69 V typical at IS = 3.2A, supporting synchronous rectification and reverse-current blocking.
The device operates across –55°C to +150°C junction temperature range with normalized RDS(ON) variation ≤1.6× over that range at VGS = 4.5V. Thermal resistance is specified at RθJA = 63.8°C/W under enhanced PCB layout (2 oz copper + thermal bias), enabling reliable operation in space-constrained industrial and portable power systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum drain-source blocking voltage for 12 V rail applications |
| RDS(ON) @ VGS = 4.5V | 4.8–6.0 mΩ - Enables <100 mW conduction loss at 12 A, critical for high-efficiency buck stages |
| ID (continuous) | 14.7 A @ TA = +25°C - Supports high-current load switching without external heatsinking on standard FR-4 |
| VGS(TH) | 0.45–1.2 V - Ensures full enhancement with 1.8 V/3.3 V logic-level gate drive |
| Qg | 14.6 nC @ VGS = 4.5V - Low gate charge reduces driver power and enables >1 MHz switching in point-of-load regulators |
| RθJA | 63.8°C/W - Achievable with 2 oz copper thermal pad; allows 1.9 W power dissipation before exceeding 150°C junction limit |
| Ciss | 1246 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Primary current return path; connected to ground or low-side reference in high-side switch configurations |
| Pin 2 (Gate) | Control input (G) | Low-threshold gate accepts 1.8 V logic; requires <15 nC total charge for full turn-on |
| Pin 3 (Drain) | Power output (D) | Main current path to load; electrically isolated from thermal pad; rated for 12 V blocking |
| Pin 4 (Source) | Source terminal (S) | Second source connection for reduced bond-wire inductance and improved current sharing |
| Pin 5 (Drain) | Power output (D) | Second drain connection enhancing current handling and thermal spreading to PCB copper |
| Pin 6 (Thermal Pad) | Exposed thermal pad | Electrically isolated copper land tied to PCB ground plane for thermal conduction; mandatory for rated power dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.6 mm height) | Enables integration into <1 mm total stack-up modules such as wearable battery management and ultra-thin USB-C PD adapters |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 or SOT-23 packages, critical for multi-phase VRMs and dense PMIC layouts |
| Low VGS(TH) (0.45–1.2 V) | Guarantees turn-on with 1.8 V microcontroller GPIOs without level-shifting, simplifying control circuitry |
| Lead-free, halogen-free, antimony-free | Meets IPC-J-STD-020 Level 1 moisture sensitivity and global environmental compliance (RoHS 3, REACH) |
| Enhanced thermal performance (RθJA = 63.8°C/W) | Supports 1.9 W continuous power on cost-effective 2 oz FR-4, eliminating need for thermal vias in many designs |
Applications
| USB-C Power Delivery Switch | Automotive Body Control Module |
|---|---|
|
Use Scenario: Bidirectional 5–20 V power path control between host and peripheral in USB-C PD 3.1 systems. IC Role / Device Role / Timing Role: Low-side load switch managing VBUS enable/disable with fast 19 ns fall time to meet USB PD transient response specs. Use Value: 6.0 mΩ RDS(ON) limits voltage drop to <75 mV at 12.5 A, preserving PD negotiation margin and reducing thermal stress on connector contacts. |
Use Scenario: 12 V battery-fed LED lighting and solenoid actuation in door modules and seat controls. IC Role / Device Role / Timing Role: High-reliability N-channel switch replacing mechanical relays; driven directly by 3.3 V CAN/LIN transceiver outputs. Use Value: 0.45 V minimum VGS(TH) ensures robust turn-on even under cold-cranking (6.5 V battery), preventing lamp flicker during engine start. |
| Portable Medical Device Power Sequencing | Industrial IoT Sensor Node Load Switch |
|
Use Scenario: Controlled power-up of analog front-end, ADC, and wireless SoC in handheld diagnostic tools. IC Role / Device Role / Timing Role: Precision sequencing switch with <100 ns turn-off delay to prevent back-powering of disabled subsystems. Use Value: 14.6 nC Qg enables clean, jitter-free edge control using low-power MCU GPIOs-no external driver required. |
Use Scenario: Battery-powered environmental sensor node with duty-cycled RF and sensing subsystems. IC Role / Device Role / Timing Role: Ultra-low quiescent current (IDSS < 1 µA) load switch isolating non-active circuits to extend 10-year battery life. Use Value: 0.007 g mass and 4 mm² footprint minimize PCB weight and area-critical for conformal coating and enclosure size constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H5T5-7 | RDS(ON) = 5.5 mΩ @ 4.5 V, but 10 V VDSS; smaller 1.6 × 1.6 mm U-DFN1616-6 package | Limited to 10 V systems; insufficient for 12 V automotive or USB PD VBUS | Select only if operating voltage ≤10 V and board area is more constrained than voltage margin |
| DMN2020LFG-7 | RDS(ON) = 8.5 mΩ @ 4.5 V, 20 V VDSS, same U-DFN2020-6 footprint | Higher conduction loss (+42%) but wider voltage headroom for transient-tolerant designs | Prefer when system must survive 16 V load-dump events without derating; tradeoff is efficiency vs. ruggedness |
Compared with DMN10H5T5-7, DMN14M8UFDF provides essential 12 V rating and lower RDS(ON) for USB PD and automotive 12 V rails; versus DMN2020LFG-7, it delivers superior efficiency at the cost of reduced overvoltage margin-making it optimal for tightly regulated 12 V domains.
Availability
DMN14M8UFDF is available at Aetrix Electronics and suitable for USB-C power delivery systems, automotive body electronics, portable medical instrumentation, and industrial IoT sensor nodes requiring stable component supply and long-term lifecycle support.
Supply support for DMN14M8UFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.
This MOSFET belongs to Diodes' "Logic-Level PowerFET" product line, engineered specifically for space-constrained, high-efficiency DC-DC conversion and intelligent load switching in consumer, industrial, and automotive electronics.
FAQ
What is the maximum safe operating junction temperature for DMN14M8UFDF?
The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A104. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating curves in Figure 5 show RDS(ON) increases by ~60% at 150°C vs. 25°C, so thermal design must ensure TJ remains ≤140°C under worst-case ambient and power conditions.
Can DMN14M8UFDF be used in a high-side switch configuration?
No-it is an N-channel MOSFET with no integrated charge pump or bootstrap circuitry. High-side switching requires either a P-channel device or an N-channel with gate drive referenced to the source (e.g., using a dedicated high-side driver IC). Its pinout and electrical specs assume low-side placement with source grounded.
Is DMN14M8UFDF qualified to AEC-Q101 for automotive use?
Yes-the datasheet explicitly states suitability for automotive applications requiring AEC-Q101 qualification, PPAP capability, and manufacturing in IATF 16949-certified facilities. Diodes confirms qualification status upon request; full test reports are available through authorized channel partners.
What is the recommended PCB pad layout for thermal performance?
Use the manufacturer-specified pad layout: 0.65 mm wide × 0.40 mm long solder mask opening for each terminal, with a 0.95 × 1.15 mm thermal pad (D2a/E2a dimensions) connected to ≥4 thermal vias (0.3 mm diameter) to inner ground planes. This achieves the 63.8°C/W RθJA rating cited in Note 6.
DMN14M8UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29.5 nC @ 10 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1246 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN14M8UFDF-13 FAQ
1.How can I place an order for DMN14M8UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN14M8UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN14M8UFDF-13 reliable?
The price and inventory of DMN14M8UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN14M8UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMN14M8UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN14M8UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN14M8UFDF-13?
DMN14M8UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN14M8UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN14M8UFDF-13?
For technical support, including DMN14M8UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN14M8UFDF-13 requirements.
6.How does Aetrix verify that DMN14M8UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMN14M8UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN14M8UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMN14M8UFDF-13?
All DMN14M8UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN14M8UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN14M8UFDF-13 part is unused and in its original packaging.
Return procedure for DMN14M8UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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