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Diodes Incorporated DMN14M8UFDF-7
- Part No.:
- DMN14M8UFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN14M8UFDF-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V U-DFN2020-6
- Quantity:
- Payment:
- Shipping:
Inventory:5,308
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Product details
Overview
DMN14M8UFDF from Diodes Incorporated is a 12V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, rated for 14.7A continuous drain current at VGS = 4.5V, with RDS(ON) = 4.8 mΩ (typ) and gate threshold voltage of 0.45–1.2V. It serves as a low-voltage power switch in compact DC-DC converters and load-switching circuits.
For engineers reviewing the DMN14M8UFDF datasheet, DMN14M8UFDF pinout, DMN14M8UFDF application, or DMN14M8UFDF equivalent, key selection criteria include its 6.0 mΩ max RDS(ON) @ 4.5V, 0.6 mm profile, 4 mm² footprint, and thermal resistance of 63.8°C/W under enhanced PCB layout-critical for space-constrained, high-efficiency power management designs.
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(ON) while preserving fast switching performance: tD(ON) = 4.7 ns, tD(OFF) = 36.6 ns, and Qg = 14.6 nC @ 4.5V. Its VGSS = ±8V rating supports robust gate drive margin in noisy environments.
The device features integrated body diode with VSD = 0.69 V (typ) @ IS = 3.2A and reverse recovery charge QRR = 7 nC, enabling efficient synchronous rectification and bidirectional current handling in buck and load-switch topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 12 V - Maximum blocking voltage for 3.3V/5V logic-level systems |
| RDS(ON) max | 6.0 mΩ @ VGS = 4.5V - Enables <100 mW conduction loss at 12 A in compact layouts |
| ID max | 14.7 A @ TA = +25°C - Supports high-current USB PD and PMIC load switches |
| VGS(TH) | 0.45–1.2 V - Ensures reliable turn-on with 1.8V/2.5V/3.3V microcontroller GPIOs |
| Qg | 14.6 nC @ VGS = 4.5V - Low gate charge reduces driver power and enables >1 MHz switching |
| RθJA | 63.8 °C/W - Achievable with 2 oz copper + thermal pad; enables 1.9 W dissipation at +70°C ambient |
| Ciss | 1246 pF - Predictable input capacitance for stable gate drive design and EMI control |
Pinout & Package
U-DFN2020-6 (Type F) is a 2.0 × 2.0 mm, 0.6 mm profile, leadless surface-mount package with exposed thermal pad. Pin 1 is marked by laser etch "O7" on bottom view; terminals are NiPdAu-plated for solderability and RoHS compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Primary current return path; tied to ground or low-side reference in high-side switch configurations |
| Pin 2 (Gate) | Control input (G) | Low-threshold input requiring minimal drive strength; sensitive to ESD but compatible with 1.8V logic |
| Pin 3 (Drain) | Power output (D) | Main current path to load; connected to input rail in low-side switch or output rail in high-side configuration |
| Pin 4 (Source) | Source terminal (S) | Second source connection for improved current sharing and thermal spreading across package |
| Pin 5 (Drain) | Power output (D) | Second drain connection enhancing current capacity and reducing parasitic inductance in high-frequency operation |
| Pin 6 (Thermal Pad) | Exposed drain (D) | Internally connected to drain; must be soldered to PCB thermal pad for RθJC = 9°C/W and safe 1.9 W operation |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables ultra-thin portable electronics (e.g., wearables, TWS earbuds) without sacrificing thermal performance |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 or SOT-23 packages-ideal for multi-rail PMIC integration |
| Low VGS(TH) | Turns on fully with standard I/O voltages (1.8V–3.3V), eliminating need for level shifters or gate drivers |
| Lead-free & halogen-free | Fully compliant with RoHS 3 (2015/863/EU) and automotive green standards (<900 ppm Br+Cl, <1000 ppm Sb) |
| Moisture sensitivity Level 1 | No baking required before reflow; simplifies manufacturing and reduces assembly cost |
Applications
| USB Type-C Load Switch | PMIC Output Stage |
|---|---|
|
Use Scenario: Power delivery path control for USB-C ports supporting 3 A @ 5 V with overcurrent protection. IC Role / Device Role / Timing Role: Low-side load switch enabling hot-plug detection and inrush limiting via gate-controlled ramp. Use Value: 6.0 mΩ RDS(ON) limits voltage drop to <18 mV at 3 A, preserving bus voltage regulation and minimizing self-heating. |
Use Scenario: Final-stage power switch for 1.2 V/3 A core rail in smartphone application processors. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier controlled by PMIC PWM signal with <5 ns propagation delay. Use Value: 14.6 nC Qg allows clean 2 MHz switching with minimal gate driver loss, improving overall PMIC efficiency by ~1.2%. |
| Bluetooth Earbud Battery Protection | IoT Sensor Node Power Gating |
|
Use Scenario: Isolating Li-ion battery during deep sleep to reduce quiescent current below 1 µA. IC Role / Device Role / Timing Role: Ultra-low-leakage power switch with IDSS <1 µA at 9.6 V, controlled by MCU GPIO. Use Value: Sub-1 µA off-state leakage extends shelf life and preserves battery charge over 6-month storage periods. |
Use Scenario: Enabling/disabling environmental sensor subsystems (e.g., temperature/humidity) on demand in battery-powered nodes. IC Role / Device Role / Timing Role: Fast-turning discrete switch with tD(ON) = 4.7 ns, synchronized to MCU wake-up interrupt. Use Value: 0.45 V minimum VGS(TH) ensures reliable activation even with aged coin-cell voltage (2.2 V), avoiding brownout failures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H8FDF-7 | RDS(ON) = 8.0 mΩ @ 4.5V; lower ID = 10.5 A; identical U-DFN2020-6 package | Better thermal stability above 100°C but reduced current headroom | Select when operating junction temperature exceeds 125°C and peak current ≤10 A |
| AO3414 | RDS(ON) = 6.5 mΩ @ 4.5V; SOT-23 package; RθJA = 190°C/W; no thermal pad | Higher thermal resistance limits continuous power to ~0.6 W on standard FR-4 | Choose only for low-duty-cycle, low-power (<500 mA) applications where board space permits larger footprint |
Compared with DMN10H8FDF-7, DMN14M8UFDF delivers +40% current capability at same RDS(ON) grade; versus AO3414, it provides 3.2× better thermal performance and 2.5× higher continuous current in half the footprint area.
Availability
DMN14M8UFDF is available at Aetrix Electronics and suitable for USB-C power delivery, PMIC output stages, battery protection circuits, and IoT sensor node power gating requiring stable component supply and long-term manufacturability.
Supply support for DMN14M8UFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' "Ultra-Low RDS(ON) Logic-Level" product line, engineered specifically for high-density, high-efficiency power switching in portable and battery-operated electronics.
FAQ
What is the maximum safe operating temperature for DMN14M8UFDF?
The device is rated for junction temperature from –55°C to +150°C. Under typical 2 oz copper PCB layout with thermal pad, it sustains 1.9 W dissipation at +70°C ambient. Derating is required above +70°C per the RθJA(t) curve in Figure 13; at +105°C ambient, max continuous power drops to ~0.8 W.
Can DMN14M8UFDF be used in high-side switch configurations?
Yes-it supports high-side operation when driven by a gate voltage ≥ VIN + VGS(TH). A dedicated high-side driver (e.g., TC1015 or ZXGD3101) is required to generate sufficient gate bias above the drain rail. The 12 V VDSS rating limits use to ≤10 V input rails with safety margin.
Is the thermal pad electrically isolated or connected internally?
The exposed thermal pad (Pin 6) is internally connected to the drain terminal. It must be soldered to a PCB copper pour tied to the drain net-not to ground-to avoid short circuits. This connection enables the 9°C/W RθJC path and is essential for achieving rated power dissipation.
Does DMN14M8UFDF meet AEC-Q101 for automotive use?
No-this part is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMN14M8UFDFQ-7) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening. For non-automotive industrial or consumer applications, the standard DMN14M8UFDF-7 is fully qualified per JESD22 and JEDEC standards.
DMN14M8UFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29.5 nC @ 10 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1246 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN14M8UFDF-7 FAQ
1.How can I place an order for DMN14M8UFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN14M8UFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN14M8UFDF-7 reliable?
The price and inventory of DMN14M8UFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN14M8UFDF-7 is usually 5 days.
3.What payment methods are accepted for DMN14M8UFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN14M8UFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN14M8UFDF-7?
DMN14M8UFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN14M8UFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN14M8UFDF-7?
For technical support, including DMN14M8UFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN14M8UFDF-7 requirements.
6.How does Aetrix verify that DMN14M8UFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMN14M8UFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN14M8UFDF-7 meets industry standards.
7.What is the process for return or replacement of DMN14M8UFDF-7?
All DMN14M8UFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN14M8UFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN14M8UFDF-7 part is unused and in its original packaging.
Return procedure for DMN14M8UFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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