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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN15H310SK3-13

Name: DMN15H310SK3-13
Brand: Diodes Incorporated
SKU: DMN15H310SK3-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN15H310SK3-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMN15H310SK3-13.pdf

Description:: MOSFET N-CH 150V 8.3A TO252

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Product details

Overview

DMN15H310SK3-13 from Diodes Incorporated is a 150V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 8.3A continuous drain current at V_GS = 10V, with R_DS(ON) = 310 mΩ max, optimized for high-efficiency DC-DC converters and power management circuits in industrial and automotive power supplies.

For engineers reviewing the DMN15H310SK3-13 datasheet, DMN15H310SK3-13 pinout, DMN15H310SK3-13 application, or DMN15H310SK3-13 equivalent, key selection criteria include its AEC-Q101 qualification, low gate charge (Q_g = 8.7 nC @ 10V), thermally efficient DPAK package, and body diode recovery performance (t_RR = 38 ns, Q_RR = 53 nC).

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low R_DS(ON) while maintaining robust avalanche capability (E_AS = 0.36 mJ). Its gate threshold voltage (V_GS(TH) = 1–3 V) supports both 5 V and 10 V drive logic, and its C_iss/C_oss/C_rss values (405/40/20 pF @ 25 V) enable fast switching with controlled EMI in synchronous buck stages.

The device integrates a co-packaged body diode with V_SD = 0.8–1.2 V at 1.7 A and exhibits stable on-resistance over temperature (R_DS(ON) variation <1.8× from –55°C to +150°C at fixed V_GS), supporting reliable operation in thermally constrained environments without derating penalties.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 48 V input bus and 100 V transient clamping in industrial SMPS.
R_DS(ON) max	310 mΩ @ V_GS = 10 V, ID = 1.5 A - Enables ≤0.5 W conduction loss at 8 A, critical for thermal budget in compact power modules.
Q_g	8.7 nC @ V_GS = 10 V - Reduces gate driver power demand and switching transition time, improving efficiency above 300 kHz.
t_RR / Q_RR	38 ns / 53 nC - Minimizes reverse recovery losses and shoot-through risk in synchronous rectification topologies.
R_θJC	3.9 °C/W - Enables direct heatsinking via PCB copper pad, supporting >25 W dissipation with minimal thermal interface resistance.
AEC-Q101	Qualified - Validated for automotive-grade reliability including HTGB, HTRB, and temperature cycling per stress test standards.

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced plastic case with exposed drain pad for PCB heat transfer. Dimensions per AP02001: D = 6.10 mm, E = 6.58 mm, H = 9.91 mm, L = 1.59 mm, b3 = 5.33 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Connected to exposed metal tab - must be soldered to large copper pour for thermal and electrical continuity.
Source (S)	Reference node for gate control and current return	Low-inductance connection point for gate driver ground and power loop; ties to source of synchronous FET in half-bridge.
Gate (G)	Control electrode for channel modulation	High-impedance input requiring <2.9 Ω gate resistance to damp ringing; sensitive to ESD (±20 V rating).

Key Features

Feature	Design Value
Low R_DS(ON) at 5 V drive	330 mΩ max @ V_GS = 5 V enables compatibility with 5 V microcontroller GPIOs without level-shifting.
Thermally efficient DPAK	R_θJC = 3.9 °C/W allows >12 W continuous dissipation at T_C = 100°C, reducing need for external heatsinks.
Fast body diode recovery	t_RR = 38 ns and Q_RR = 53 nC minimize cross-conduction losses in synchronous buck and LLC resonant converters.
AEC-Q101 qualified	Validated for automotive under-hood applications including engine control units and ADAS power rails.

Applications

Industrial DC-DC Converters

Automotive Body Control Modules

Use Scenario: Step-down conversion from 48 V battery rail to 12 V/5 V for infotainment and lighting subsystems.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck regulator operating at 250–500 kHz.

Use Value: Low Q_g and fast t_RR reduce switching losses by ≥15% vs. legacy 150 V MOSFETs, enabling higher frequency and smaller magnetics.

Use Scenario: Load switching for LED headlamps and HVAC actuators in BCMs with PWM dimming and diagnostic feedback.

IC Role / Device Role / Timing Role: Low-side load switch with integrated current sensing and short-circuit protection.

Use Value: AEC-Q101 qualification ensures 15-year field reliability; R_DS(ON) stability over –40°C to +125°C avoids cold-start derating.

Telecom Power Supplies

Renewable Energy Inverters

Use Scenario: Intermediate bus converter (48 V → 12 V) in 1U server PSUs with strict efficiency and thermal constraints.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or phase-shifted full-bridge topology.

Use Value: 0.36 mJ avalanche energy rating supports safe operation during transient overvoltage events common in telecom surge environments.

Use Scenario: MPPT boost stage in solar microinverters handling 60–100 V PV string inputs.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost converter with digital current-mode control.

Use Value: 150 V V_DSS provides 20% margin over 80 V max PV open-circuit voltage, eliminating need for higher-cost 200 V devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 150 V N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NF15	R_DS(ON) = 150 mΩ @ 10 V, but V_DSS = 150 V and no AEC-Q101 qualification; higher Q_g = 12 nC.	Lacks automotive qualification and has slower switching; suited for cost-sensitive industrial AC-DC adapters only.	Select only if AEC-Q101 is not required and thermal margin permits higher conduction loss.
IXTP15N15P	TO-220 package, R_DS(ON) = 150 mΩ @ 10 V, same V_DSS, but Q_g = 10.5 nC and no green/halogen-free certification.	Through-hole mounting limits board density; lacks RoHS 2 and "Green" compliance required for EU automotive programs.	Prefer only when manual assembly or legacy through-hole infrastructure mandates TO-220 form factor.

Compared with STP15NF15 and IXTP15N15P, DMN15H310SK3-13 delivers superior thermal performance in surface-mount format, automotive-grade reliability, and environmental compliance-making it the optimal choice for space-constrained, high-reliability 150 V switching applications where DPAK footprint and AEC-Q101 are mandatory.

Availability

DMN15H310SK3-13 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DMN15H310SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-voltage switching in compact surface-mount power converters where thermal performance and automotive qualification are critical design requirements.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMN15H310SK3-13 supports 5.2 A continuous drain current at T_C = +100°C, as specified in its Absolute Maximum Ratings table. This derating reflects junction-to-case thermal resistance (3.9 °C/W) and maximum junction temperature limit of 150°C, ensuring safe operation under sustained thermal load without exceeding SOA boundaries.

Is the body diode suitable for synchronous rectification?

Yes-the body diode is characterized with t_RR = 38 ns and Q_RR = 53 nC at I_F = 7.3 A and di/dt = 100 A/µs, enabling use in synchronous rectification topologies. However, external Schottky diodes may still be preferred in ultra-high-frequency designs (>1 MHz) due to lower Q_RR and zero recovery charge.

Does this MOSFET require a gate resistor for stability?

Yes-a series gate resistor (typically 2.5–10 Ω) is recommended to damp high-frequency oscillation caused by gate-drain capacitance (C_rss = 20 pF) and PCB parasitics. The datasheet specifies gate resistance R_G = 2.88 Ω (typical), and layout best practices mandate minimizing gate loop inductance to prevent ringing during hard switching.

How does the R_DS(ON) vary with gate voltage below 5 V?

R_DS(ON) increases significantly below 5 V: 350 mΩ max @ V_GS = 4.0 V (ID = 1.0 A), and device enters linear region below V_GS(TH) min = 1.0 V. For robust enhancement-mode operation, V_GS ≥ 5 V is strongly advised; operation at 3.3 V is not supported per datasheet characterization.

DMN15H310SK3-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 310mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 405 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 32W (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

DMN15H310SK3-13 FAQ

1.How can I place an order for DMN15H310SK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN15H310SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN15H310SK3-13 reliable?

The price and inventory of DMN15H310SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN15H310SK3-13 is usually 5 days.

3.What payment methods are accepted for DMN15H310SK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN15H310SK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN15H310SK3-13?

DMN15H310SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN15H310SK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN15H310SK3-13?

For technical support, including DMN15H310SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN15H310SK3-13 requirements.

6.How does Aetrix verify that DMN15H310SK3-13 is sourced from the original manufacturer or authorized distributors?

All DMN15H310SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN15H310SK3-13 meets industry standards.

7.What is the process for return or replacement of DMN15H310SK3-13?

All DMN15H310SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN15H310SK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN15H310SK3-13 part is unused and in its original packaging.

Return procedure for DMN15H310SK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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