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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN16M0UCA6-7

Name: DMN16M0UCA6-7
Brand: Diodes Incorporated
SKU: DMN16M0UCA6-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN16M0UCA6-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-SMD, No Lead

Datasheet:: DMN16M0UCA6-7.pdf

Description:: MOSFET 2N-CH 12V 17A X4-DSN2112

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN16M0UCA6-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a 6-pin CSP package (X4-DSN2112-6), optimized for ultra-low on-resistance (4.8 mΩ @ V_GS = 3.8 V) and high-current load switching up to 17 A at +25°C. It integrates ESD-protected gates and supports battery protection, load switching, and power path management in space-constrained portable electronics.

For engineers reviewing the DMN16M0UCA6-7 datasheet, DMN16M0UCA6-7 pinout, DMN16M0UCA6-7 application, or DMN16M0UCA6-7 equivalent, key selection criteria include its 12 V V_SSS, sub-0.11 mm profile, dual-source/gate topology, thermal resistance of 48 °C/W (with recommended pad layout), and compatibility with low-voltage gate drive (V_GS(TH) = 0.4–1.3 V).

Technical Context

This device implements a dual common-source configuration with independent gate terminals (G1, G2) and shared source connections (S1/S2 per channel), enabling independent control of two power paths in a single ultra-compact footprint. Its R_SS(ON) remains stable across −55°C to +150°C junction temperature, with typical values of 4.6 mΩ @ 4.5 V and 5.2 mΩ @ 2.5 V gate drive.

The MOSFET features integrated gate protection diodes (D1, D2) and is rated for ±8 V gate-source voltage, 12 V source-source breakdown, and pulsed source current up to 110 A. Transient thermal resistance R_θJA(t) is characterized down to 10 µs pulses, supporting high-frequency switching in battery protection IC co-designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_SSS	12 V - Maximum source-source blocking voltage; defines safe operating range in battery-side switching
R_SS(ON)	4.8 mΩ @ V_GS = 3.8 V - Enables <100 mW conduction loss at 10 A, critical for thermal budget in thin-profile devices
I_S (continuous)	17 A @ T_A = +25°C - Supports high-current load switching without external heatsinking on FR-4
Q_g	24 nC - Low gate charge reduces driver power and enables efficient operation with microcontroller GPIOs
Package	X4-DSN2112-6 - 2.11 × 1.18 × 0.11 mm CSP; matches 0201/01005 board area constraints while maintaining solder joint reliability
V_GS(TH)	0.8 V typ - Ensures turn-on with 1.8 V or 2.5 V logic-level supplies, eliminating need for level shifters
T_J Range	−55°C to +150°C - Qualified for extended industrial and automotive cabin environments

Pinout & Package

Package: X4-DSN2112-6 - ultra-thin 6-terminal chip-scale package with NiPdAu-plated terminals, moisture sensitivity level 1, and 0.0012 g mass.

Pin/Terminal	Circuit Role	Design Meaning
1	Source 1	Power return path for Channel 1; electrically isolated from Source 2 in PCB layout
2	Gate 1	Control input for Channel 1; ESD-protected, compatible with 1.8 V logic
3	Source 1	Second connection point for Channel 1 source; improves current sharing and thermal spreading
4	Source 2	Power return path for Channel 2; independent routing required for dual-load isolation
5	Gate 2	Independent control input for Channel 2; enables asynchronous switching of two power rails
6	Source 2	Second connection point for Channel 2 source; enhances thermal dissipation under 17 A load

Key Features

Feature	Design Value
Dual independent N-channel topology	Enables two separate load switches in one 2.11 × 1.18 mm footprint-reducing BOM count and PCB area vs. discrete solutions
Ultra-low 4.8 mΩ R_SS(ON) @ 3.8 V	Minimizes I²R losses in battery-fed systems, extending runtime and reducing thermal stress in sealed enclosures
0.11 mm profile	Supports mechanical stacking under displays or batteries in smartphones, wearables, and TWS earbuds
Integrated gate ESD protection	Withstands >2 kV HBM without external TVS, simplifying ESD design for handheld product assembly lines
Lead-free, halogen- and antimony-free	Fully compliant with RoHS 3 and automotive green standards-no rework or compliance documentation overhead

Applications

Battery Protection Circuit

USB-C Power Path Switching

Use Scenario: Real-time overcurrent and short-circuit cutoff in Li-ion battery packs for power tools and e-bikes.

IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as primary reverse-polarity and overcurrent shutoff switch, controlled by battery management IC.

Use Value: 4.8 mΩ R_SS(ON) limits voltage drop to <85 mV at 17.5 A, preserving pack voltage during fault events and enabling fast response (<1 µs) via low Q_g.

Use Scenario: Directional power routing between USB-C port and system rail in portable monitors and docking stations.

IC Role / Device Role / Timing Role: Load switch managing V_BUS path from upstream port to internal 5 V/9 V/15 V rails with independent enable control.

Use Value: Dual-gate architecture allows independent control of upstream/downstream paths, preventing backfeed while maintaining <0.1 mm height clearance under metal shields.

Smartphone Power Management

Wireless Charging Receiver Module

Use Scenario: Secondary-side load switching in multi-rail PMIC subsystems for display backlight, camera flash, and audio amplifiers.

IC Role / Device Role / Timing Role: Compact dual switch delivering precise power gating with minimal board area impact in 0.4 mm pitch SMT layouts.

Use Value: 2.11 × 1.18 mm footprint replaces two 0.6 × 0.3 mm discrete MOSFETs, freeing >0.3 mm² for RF antenna tuning components.

Use Scenario: Input rectification and regulated output switching in Qi-compliant 15 W receiver modules.

IC Role / Device Role / Timing Role: Synchronous rectifier and post-regulation switch handling peak 3 A loads with tight thermal envelope.

Use Value: 48 °C/W R_θJA (with recommended pad) sustains 1.5 W dissipation at <85°C junction temp-enabling fanless operation in compact charging pads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H260LSD-13	Higher R_DS(ON) (2.6 mΩ @ 4.5 V), larger 2.0 × 2.0 mm SO-8 package, single-channel	Requires two devices for dual-path function; better suited for higher-power, less space-constrained designs	Select when thermal margin >2 W and PCB area ≥4 mm² is available
AOB26222L	Single-channel 2.2 mΩ @ 4.5 V, 3.3 × 3.3 mm TDFN, no integrated ESD protection	Lacks dual-gate topology and gate ESD diodes-requires external protection and additional layout area	Prefer only if gate drive exceeds 4.5 V and external ESD design is already standardized

Compared with DMN16M0UCA6-7, DMN10H260LSD-13 offers lower on-resistance but doubles footprint and component count for dual-path use; AOB26222L delivers superior R_DS(ON) yet sacrifices integration, height, and ESD robustness-making DMN16M0UCA6-7 optimal for ultra-thin, dual-control, production-ready battery systems.

Availability

DMN16M0UCA6-7 is available at Aetrix Electronics and suitable for battery protection, USB-C power path management, and smartphone power gating requiring stable component supply, consistent lead-free sourcing, and long-term lifecycle support.

Supply support for DMN16M0UCA6-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMN16M0UCA6-7 belongs to Diodes' ultra-compact power MOSFET portfolio, engineered specifically for space- and thermally constrained battery-powered devices where dual-path control, low gate threshold, and sub-0.12 mm height are mandatory.

FAQ

What is the maximum continuous current rating for DMN16M0UCA6-7 at +70°C ambient?

At T_A = +70°C, the continuous source current is 13.5 A when V_GS = 4.5 V and 10 A when V_GS = 2.5 V, based on thermal derating from the 17 A / 12.5 A ratings at +25°C. These values assume mounting on FR-4 with minimum recommended copper pad layout per DS40941 Rev. 3-2.

Does DMN16M0UCA6-7 support bidirectional current flow?

No-DMN16M0UCA6-7 is a unidirectional N-channel MOSFET with intrinsic body diode orientation from source to drain. Its internal structure lacks symmetrical source/drain doping, so it cannot safely conduct reverse current without external circuitry or complementary P-channel implementation.

Can DMN16M0UCA6-7 be used with 1.8 V GPIOs from an MCU?

Yes-the gate threshold voltage V_GS(TH) is specified from 0.4 V to 1.3 V, and R_SS(ON) is characterized down to V_GS = 2.5 V (5.2 mΩ typ). At 1.8 V, the device conducts weakly (~1–2 A), sufficient for enable signaling but not full-load switching; for 17 A operation, ≥2.5 V gate drive is required.

Is the X4-DSN2112-6 package compatible with standard reflow profiles?

Yes-the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60 sec max above 217°C). Its NiPdAu terminal finish ensures reliable solderability per MIL-STD-202 Method 208, with no special pre-bake required.

DMN16M0UCA6-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-SMD, No Lead

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual) Common Drain

FET Feature:: -

Drain to Source Voltage (Vdss):: 12V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta)

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:: 1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 24nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: -

Power - Max:: 900mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X4-DSN2112-6

DMN16M0UCA6-7 FAQ

1.How can I place an order for DMN16M0UCA6-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN16M0UCA6-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN16M0UCA6-7 reliable?

The price and inventory of DMN16M0UCA6-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN16M0UCA6-7 is usually 5 days.

3.What payment methods are accepted for DMN16M0UCA6-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN16M0UCA6-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN16M0UCA6-7?

DMN16M0UCA6-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN16M0UCA6-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN16M0UCA6-7?

For technical support, including DMN16M0UCA6-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN16M0UCA6-7 requirements.

6.How does Aetrix verify that DMN16M0UCA6-7 is sourced from the original manufacturer or authorized distributors?

All DMN16M0UCA6-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN16M0UCA6-7 meets industry standards.

7.What is the process for return or replacement of DMN16M0UCA6-7?

All DMN16M0UCA6-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN16M0UCA6-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN16M0UCA6-7 part is unused and in its original packaging.

Return procedure for DMN16M0UCA6-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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