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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN16M8UCA6-7

Name: DMN16M8UCA6-7
Brand: Diodes Incorporated
SKU: DMN16M8UCA6-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN16M8UCA6-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-SMD, No Lead

Datasheet:: DMN16M8UCA6-7.pdf

Description:: MOSFET 2N-CH 12V X3-DSN2718-6

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Product details

Overview

DMN16M8UCA6-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-R_DS(ON) and high-efficiency power switching in space-constrained battery management systems. It delivers 4.3 mΩ typical R_SS(ON) at V_GS = 3.8 V, supports 15.5 A continuous source current at T_A = +25°C, and features a 12 V V_SSS rating in the ultra-thin X3-DSN2718-6 package.

For engineers reviewing the DMN16M8UCA6-7 datasheet, DMN16M8UCA6-7 pinout, DMN16M8UCA6-7 application, or DMN16M8UCA6-7 equivalent, key selection criteria include its 0.21 mm height, ESD-protected gate, 2.70 mm × 1.81 mm CSP footprint, and thermal resistance of 60 °C/W under standard FR-4 mounting conditions.

Technical Context

This MOSFET operates as a low-side load switch with gate threshold voltage (V_GS(TH)) ranging from 0.5 V to 1.3 V and exhibits strong temperature stability-R_SS(ON) increases only ~1.4× from −55°C to +150°C at V_GS = 3.8 V. Its dynamic characteristics include 45.4 nC total gate charge and 175 pF reverse transfer capacitance, enabling fast switching with controlled dV/dt.

The device integrates ESD protection on the gate terminal and uses NiAu-plated terminals compatible with MIL-STD-202 soldering. Its maximum junction temperature is +150°C, and it meets J-STD-020 Level 1 moisture sensitivity-suitable for standard reflow without baking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_SSS	12 V - Absolute maximum source-source blocking voltage; defines safe operating range in battery disconnect applications.
R_SS(ON) Typ	4.3 mΩ @ V_GS = 3.8 V - Enables <100 mW conduction loss at 15 A, critical for thermally limited portable designs.
I_S Max	15.5 A @ T_A = +25°C - Continuous current capability under standard PCB layout; derates to 12.5 A at +70°C ambient.
Q_g	45.4 nC - Total gate charge determines drive strength requirement and switching energy loss in PWM control.
R_θJA	60 °C/W - Thermal resistance with recommended pad layout; enables 2.1 W power dissipation before reaching T_J(max).
V_GS(TH)	0.7 V Typ - Low threshold allows direct drive from 2.5 V/3.3 V logic; ensures turn-on at microcontroller GPIO levels.
C_iss	2333 pF - Input capacitance affects gate driver slew rate and EMI generation during hard-switching transitions.

Pinout & Package

Package: X3-DSN2718-6 - ultra-thin chip-scale package measuring 2.70 mm × 1.81 mm × 0.21 mm, with NiAu-plated terminals and no leaded terminations.

Pin/Terminal	Circuit Role	Design Meaning
S1	Source Terminal 1	Primary current return path; electrically tied to S2 and S3 in internal structure for parallel conduction and reduced resistance.
G1	Gate Terminal 1	Control input with integrated ESD protection; requires ≤ ±8 V bias per datasheet absolute maximum ratings.
S2	Source Terminal 2	Secondary source connection; used with S1/S3 to distribute current and lower effective package inductance.
G2	Gate Terminal 2	Redundant gate pad for improved gate drive robustness and lower loop inductance in high-frequency switching.
S3	Source Terminal 3	Third source connection; completes 3-terminal source configuration to minimize IR drop and thermal gradient across die.
D	Drain Terminal	High-current output node connected directly to MOSFET die drain; exposed top-side metal for thermal conduction to PCB copper.

Key Features

Feature	Design Value
Ultra-low profile	0.21 mm height enables integration into slim battery packs and wearable electronics where Z-axis clearance is constrained.
ESD-protected gate	HBM rating ≥ 2 kV (implied by "ESD Protection of Gate" in Features section); reduces risk of field failure during handling and assembly.
CSP footprint	2.70 mm × 1.81 mm area matches industry-standard DFN-6 layouts-enables drop-in replacement in existing designs using similar pitch.
Lead-free & green compliance	Fully RoHS 3 compliant with <900 ppm Br/Cl and <1000 ppm Sb; satisfies environmental requirements for consumer and automotive supply chains.
Low R_SS(ON) at low V_GS	4.5 mΩ @ V_GS = 3.1 V enables efficient operation with 3.3 V microcontrollers without level-shifting circuitry.

Applications

Battery Protection Circuit

USB-C Power Delivery Load Switch

Use Scenario: Prevents overcurrent, short-circuit, and reverse-polarity events in lithium-ion battery packs using external sense resistors and protection ICs.

IC Role / Device Role: Primary power FET in high-side or low-side protection path; handles full pack current during fault isolation.

Use Value: 4.3 mΩ R_SS(ON) minimizes voltage drop and heat generation during sustained 10–15 A discharge, extending battery runtime and thermal margin.

Use Scenario: Enables/disables 5–20 V power rails in USB-C PD sink devices based on CC logic or system controller commands.

IC Role / Device Role: Low-side load switch controlling VBUS path; driven directly by 3.3 V GPIO with minimal gate drive overhead.

Use Value: 0.7 V typical V_GS(TH) ensures reliable turn-on at 3.3 V logic, while 0.21 mm height accommodates strict mechanical stack-up in thin mobile accessories.

Smartphone Backlight LED Driver

Wireless Earbud Charging Case

Use Scenario: Supplies pulsed current to white LED strings in OLED/LCD displays, synchronized with display refresh timing.

IC Role / Device Role: PWM-controlled current sink switch; modulates LED brightness via duty-cycle-adjusted conduction.

Use Value: 45.4 nC Q_g and 175 pF C_rss support clean 10–50 kHz switching with low shoot-through risk and minimal gate drive power loss.

Use Scenario: Isolates charging circuitry from battery during standby to reduce quiescent current and prevent leakage-induced capacity loss.

IC Role / Device Role: Always-on low-leakage switch between Li-ion cell and charging IC; activated only during active charge cycles.

Use Value: 1 µA max I_SSS at V_SS = 10 V ensures <10 nA standby drain per switch-critical for multi-week shelf life in sealed earbud cases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H400LQ-7	R_DS(ON) = 3.8 mΩ @ V_GS = 4.5 V; higher 15 V V_DS; larger X2-DSN1006-3 package (1.0 mm × 0.6 mm).	Higher voltage rating suits 12 V automotive body electronics; smaller footprint but higher R_DS(ON) at 3.3 V drive.	Select when 15 V blocking is required and board space permits tighter pitch but lower thermal mass.
AOZ1280CI	Integrated load switch with enable, soft-start, and current limit; 5.5 mΩ R_DS(ON); SO-8 package; requires external control logic.	Replaces discrete FET + driver combo; adds protection features but consumes more PCB area and cost.	Choose when system-level fault response (e.g., overcurrent shutdown) must be embedded rather than implemented externally.

Compared with DMN10H400LQ-7, the DMN16M8UCA6-7 offers superior low-V_GS performance and thinner profile, while AOZ1280CI trades discrete flexibility for integrated protection-making DMN16M8UCA6-7 optimal for compact, logic-driven, thermally sensitive battery switches.

Availability

DMN16M8UCA6-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C load switching, smartphone backlight drivers, and wireless earbud charging cases requiring stable component supply and consistent parametric performance across production lots.

Supply support for DMN16M8UCA6-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN16M8UCA6-7 belongs to Diodes' high-density power MOSFET product line, engineered specifically for ultra-compact, high-current battery management and portable power delivery systems where thermal and spatial constraints dominate design decisions.

FAQ

What is the maximum gate-source voltage rating for DMN16M8UCA6-7?

The absolute maximum gate-source voltage is ±8 V under normal operating conditions, with a transient rating of ±10.5 V for pulses ≤10 μs and ≤1% duty cycle. Exceeding ±8 V continuously risks gate oxide degradation and long-term reliability loss, especially at elevated temperatures.

Does DMN16M8UCA6-7 require a gate resistor for typical 3.3 V GPIO drive?

No external gate resistor is required for basic on/off switching with 3.3 V microcontroller GPIO, as the device's low gate charge (45.4 nC) and low V_GS(TH) (0.7 V typ) allow full enhancement with minimal drive strength. A small resistor (10–47 Ω) may be added only to damp ringing in high-dI/dt layouts.

How does the X3-DSN2718-6 package affect thermal performance compared to standard SO-8?

The X3-DSN2718-6 achieves 60 °C/W R_θJA with proper PCB copper area-comparable to SO-8 with thermal pad-but in 1/10th the volume. Its top-side drain exposes die metal directly to PCB, enabling vertical heat conduction; however, it lacks a dedicated thermal pad, so thermal relief relies entirely on source-terminal copper spreading.

Is DMN16M8UCA6-7 qualified for automotive applications per AEC-Q101?

No-the datasheet explicitly states that automotive-qualified versions require specific change control, AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing. The DMN16M8UCA6-7 is rated for industrial and consumer use only; Diodes offers separate AEC-Q101 variants (e.g., DMN16M8UCA6Q) for automotive deployment.

DMN16M8UCA6-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-SMD, No Lead

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual) Common Drain

FET Feature:: -

Drain to Source Voltage (Vdss):: 12V

Current - Continuous Drain (Id) @ 25°C:: 15.5A (Ta)

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:: 1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 45.4nC @ 6V

Input Capacitance (Ciss) (Max) @ Vds:: 2333pF @ 6V

Power - Max:: 1.1W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X3-DSN2718-6

DMN16M8UCA6-7 FAQ

1.How can I place an order for DMN16M8UCA6-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN16M8UCA6-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN16M8UCA6-7 reliable?

The price and inventory of DMN16M8UCA6-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN16M8UCA6-7 is usually 5 days.

3.What payment methods are accepted for DMN16M8UCA6-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN16M8UCA6-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN16M8UCA6-7?

DMN16M8UCA6-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN16M8UCA6-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN16M8UCA6-7?

For technical support, including DMN16M8UCA6-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN16M8UCA6-7 requirements.

6.How does Aetrix verify that DMN16M8UCA6-7 is sourced from the original manufacturer or authorized distributors?

All DMN16M8UCA6-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN16M8UCA6-7 meets industry standards.

7.What is the process for return or replacement of DMN16M8UCA6-7?

All DMN16M8UCA6-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN16M8UCA6-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN16M8UCA6-7 part is unused and in its original packaging.

Return procedure for DMN16M8UCA6-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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