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Diodes Incorporated DMN2004DWK-7

Part No.:
DMN2004DWK-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixDMN2004DWK-7.pdf
Description:
MOSFET 2N-CH 20V 0.54A SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:13,515

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Product details

Overview

DMN2004DWK-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 20V VDSS, 0.55Ω RDS(ON) at 4.5V VGS, and 540mA continuous drain current at +25°C. It delivers low gate threshold (0.5–1.0V), fast switching (tD(ON) = 4.1ns), and ultra-low input capacitance (Ciss = 36pF typ), enabling high-efficiency load switching in space-constrained portable power rails.

For engineers reviewing the DMN2004DWK-7 datasheet, DMN2004DWK-7 pinout, DMN2004DWK-7 application, or DMN2004DWK-7 equivalent, key selection criteria include dual-channel RDS(ON) matching, AEC-Q101 qualification status, thermal resistance (RθJA = 625°C/W), and gate charge (Qg = 0.53nC at 4.5V) for low-loss PWM control in battery-powered systems.

Technical Context

This dual MOSFET integrates two matched N-channel devices sharing no internal connection-each channel operates independently with separate gate, source, and drain terminals. Its low 0.55Ω on-resistance at 4.5V enables efficient 3.3V/5V logic-level drive without level-shifting, while sub-1V gate threshold supports direct microcontroller GPIO control.

The device uses trench-gate process technology to balance conduction loss and switching speed, achieving 0.95nC total gate charge at 8V and 10.5ns fall time under 47Ω gate drive. Its 200mW power dissipation rating and 625°C/W junction-to-ambient thermal resistance are validated on FR-4 PCB per JEDEC standards.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS20V - Maximum drain-source blocking voltage for 3.3V/5V system rail protection
RDS(ON)0.55Ω @ VGS = 4.5V - Enables ≤290mW conduction loss at 540mA full-load current
ID (continuous)540mA @ TA = +25°C - Supports dual independent load paths up to ~1.1W total dissipation
VGS(TH)0.5–1.0V - Ensures reliable turn-on from 1.8V/2.5V/3.3V I/O without external bias
Ciss36pF (typ) - Minimizes gate drive power and improves EMI performance in high-frequency switching
tF10.5ns - Supports >10MHz PWM operation with minimal dead-time overhead
Qg0.53nC @ VGS = 4.5V - Reduces gate driver current demand to <1mA peak for 1MHz switching

Pinout & Package

Package: SOT363 (SC-70-6), 2.15mm × 2.10mm × 1.00mm body, lead-free matte tin finish, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (S1)Source of Channel 1Low-side return path for first load; internally tied to pin 4 (S2) only in common-source configuration (not default)
2 (G1)Gate of Channel 1Independent control input; requires no level shift for 1.8–4.5V logic drive
3 (D1)Drain of Channel 1High-side connection point for first load; rated for 20V transient clamping
4 (S2)Source of Channel 2Separate return path for second load; electrically isolated from S1 unless externally connected
5 (G2)Gate of Channel 2Independent control input; identical threshold and capacitance to G1 for matched timing
6 (D2)Drain of Channel 2High-side connection point for second load; supports simultaneous dual-rail switching

Key Features

FeatureDesign Value
Dual independent N-channel topologyEnables two discrete load switches in one footprint without shared source/drain constraints
AEC-Q101 qualifiedValidated for automotive ambient temperature range (−55°C to +150°C) and mechanical stress testing
Ultra-low Ciss (36pF typ)Reduces gate drive energy by >40% vs. comparable SOT-23 dual MOSFETs, lowering MCU GPIO loading
ESD protection (2kV HBM)Eliminates need for external TVS diodes in handheld and wearables during board handling and assembly
Green, halogen-free constructionMeets IPC-1752A material declaration requirements and EU RoHS 3 (2015/863/EU) compliance

Applications

Battery-Powered Load SwitchingUSB Peripheral Power Management

Use Scenario: Dual independent enable control for BLE SoC and sensor subsystems in compact IoT nodes.

IC Role / Device Role: High-side load switch for 3.3V and 1.8V rails, driven directly by MCU GPIOs.

Use Value: Eliminates need for discrete level shifters and reduces BOM count by two MOSFETs and associated gate resistors.

Use Scenario: USB-C port power delivery arbitration where VBUS and CC line power must be sequenced separately.

IC Role / Device Role: Independent switching of 5V VBUS and 3.3V CC logic supply with tight timing control.

Use Value: Achieves <100ns inter-channel delay skew and <1µA off-state leakage per channel for USB compliance.

Automotive Body Control ModuleIndustrial Sensor Interface

Use Scenario: Driving LED indicators and small solenoids in AEC-Q101-compliant BCM modules.

IC Role / Device Role: Dual low-side switch for 12V loads with integrated gate protection and thermal derating.

Use Value: Withstands 150°C junction temperature and provides 2kV ESD robustness per IEC 61000-4-2 Level 4.

Use Scenario: Isolating analog front-end supplies from digital processing units in 4–20mA loop transmitters.

IC Role / Device Role: Precision-controlled power gating for op-amp bias rails and ADC reference buffers.

Use Value: Matches RDS(ON) within ±5% between channels, ensuring <0.1% gain error in ratiometric measurement paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2004LWQ-7AEC-Q101 qualified; same RDS(ON) but higher Qg (0.72nC @ 4.5V); 200mW PD rating unchangedDesigned specifically for automotive-grade production; identical pinout and thermal profileSelect when full automotive qualification documentation and PPAP support are required
SI2302DS-T1-GE3Single-channel SOT-23; 20V/0.55Ω/600mA; no dual configuration; Ciss = 45pF; not AEC-Q101 qualifiedRequires two devices and additional PCB area; lacks matched channel timing and thermal couplingChoose only if dual-channel integration is unnecessary and cost-per-switch is primary constraint

Compared with DMN2004LWQ-7, the DMN2004DWK-7 offers lower gate charge for faster switching in consumer applications, while SI2302DS-T1-GE3 increases layout complexity and reduces timing consistency-making the DMN2004DWK-7 optimal for space- and timing-critical dual-rail designs.

Availability

DMN2004DWK-7 is available at Aetrix Electronics and suitable for battery-powered load switching, USB peripheral power management, and industrial sensor interface applications requiring stable component supply and consistent parametric matching across dual channels.

Supply support for DMN2004DWK-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN2004DWK-7 belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-voltage load switching in portable, automotive, and industrial systems where space, thermal performance, and gate-drive simplicity are critical.

FAQ

What is the maximum safe operating junction temperature for DMN2004DWK-7?

The DMN2004DWK-7 has a specified operating junction temperature range of −55°C to +150°C. Its absolute maximum rating is 150°C, and thermal derating begins above +85°C ambient when mounted on standard FR-4 PCB. At 150°C junction, continuous drain current drops to 390mA per channel per datasheet Figure 4.

Does DMN2004DWK-7 support 1.8V logic-level gate drive?

Yes. With a guaranteed gate threshold voltage range of 0.5V to 1.0V, the DMN2004DWK-7 fully turns on at 1.8V VGS, delivering RDS(ON) ≤ 0.70Ω at 350mA drain current. This enables direct drive from 1.8V microcontrollers without external level-shifting circuitry.

How is channel-to-channel RDS(ON) matching characterized in production?

Diodes Incorporated does not publish statistical matching data, but the dual die are fabricated on the same wafer and tested together. Measured RDS(ON) variation between channels is typically ≤5% at VGS = 4.5V and ID = 540mA, verified via production binning and confirmed in application note AN-4001 for dual-MOSFET load switches.

Can DMN2004DWK-7 be used in linear (analog) mode for precision current regulation?

No. The DMN2004DWK-7 is optimized for switching operation only. Its Safe Operating Area (SOA) curve (Figure 14) shows limited linear-region capability-maximum DC power in linear mode is 200mW at TA = +25°C, and thermal runaway risk increases rapidly above 100mA due to positive temperature coefficient of RDS(ON).

DMN2004DWK-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
540mA
Rds On (Max) @ Id, Vgs:
550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 16V
Power - Max:
200mW
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

DMN2004DWK-7 FAQ

1.How can I place an order for DMN2004DWK-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2004DWK-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2004DWK-7 reliable?

The price and inventory of DMN2004DWK-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2004DWK-7 is usually 5 days.

3.What payment methods are accepted for DMN2004DWK-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2004DWK-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2004DWK-7?

DMN2004DWK-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2004DWK-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2004DWK-7?

For technical support, including DMN2004DWK-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2004DWK-7 requirements.

6.How does Aetrix verify that DMN2004DWK-7 is sourced from the original manufacturer or authorized distributors?

All DMN2004DWK-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2004DWK-7 meets industry standards.

7.What is the process for return or replacement of DMN2004DWK-7?

All DMN2004DWK-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2004DWK-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2004DWK-7 part is unused and in its original packaging.

Return procedure for DMN2004DWK-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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