My Inquiry
My Account
Diodes Incorporated DMN2005DLP4K-7
- Part No.:
- DMN2005DLP4K-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
DMN2005DLP4K-7.pdf
- Description:
- MOSFET 2N-CH 20V 0.3A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:26,340
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN2005DLP4K-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a 1.3 mm × 1.0 mm X2-DFN1310-6 package, rated for 20 V VDSS, 300 mA continuous drain current per channel, and ultra-low gate threshold voltage (0.9 V max). It enables compact load switching in space-constrained portable power management circuits.
For engineers reviewing the DMN2005DLP4K-7 datasheet, DMN2005DLP4K-7 pinout, DMN2005DLP4K-7 application, or DMN2005DLP4K-7 equivalent, key selection criteria include its 0.35 Ω RDS(ON) at VGS = 4 V, dual-channel integration in ultra-small footprint, ESD-protected gate, and guaranteed operation from –65 °C to +150 °C.
Technical Context
This dual MOSFET integrates two independent N-channel silicon devices sharing a common source configuration in a thermally enhanced DFN package. Each channel supports logic-level drive down to 1.5 V and delivers low on-resistance with minimal gate charge, enabling efficient switching in battery-powered DC-DC converter synchronous rectification and load-switching stages.
The device uses trench-gate process technology to achieve sub-1 V gate threshold and tight parameter distribution across temperature. Its 231 °C/W RθJA reflects optimized thermal path from junction to ambient via exposed copper pad, and leakage remains below 10 µA IDSS at 17 V VDS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Supports input rails up to 18 V with 10% margin for transient spikes in portable systems. |
| RDS(ON) @ VGS = 4 V | 0.35 Ω max - Enables <100 mW conduction loss at 300 mA per channel, critical for thermal budget in sealed enclosures. |
| VGS(TH) max | 0.9 V - Ensures full enhancement with 1.2 V I/O from modern ultra-low-voltage MCUs and PMICs. |
| ID continuous | 300 mA per channel - Sufficient for driving LED strings, sensor bias networks, or small solenoids in wearables. |
| RθJA | 231 °C/W - Requires minimal PCB copper area for thermal relief; no heatsink needed in FR-4 layouts with 1-in² 2-oz copper pour. |
| ESD rating | HBM ±2 kV - Integrated gate protection eliminates need for external TVS in most consumer interface paths. |
Pinout & Package
Package: X2-DFN1310-6 - 1.3 mm × 1.0 mm × 0.4 mm ultra-low-profile leadless package with exposed thermal pad; JEDEC-compliant moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G1) | Gate of Channel 1 | Logic-level control input; accepts 1.2–4.5 V drive without level shifting. |
| Pin 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to ground or return path in high-side switch configurations. |
| Pin 3 (D1) | Drain of Channel 1 | Switched output node; connects to load anode or buck converter low-side node. |
| Pin 4 (D2) | Drain of Channel 2 | Independent switched output; enables dual-load control without discrete part duplication. |
| Pin 5 (S2) | Source of Channel 2 | Separate source terminal - allows independent source referencing or floating-source topologies. |
| Pin 6 (G2) | Gate of Channel 2 | Second logic-level control input; fully isolated from G1 for asynchronous switching. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | 0.9 V max ensures reliable turn-on with 1.2 V/1.8 V I/O domains, eliminating level shifters in IoT node designs. |
| Dual-channel integration | Two matched N-MOSFETs in one 1.3×1.0 mm footprint reduce board area by >40% vs. discrete solutions. |
| Thermally optimized DFN | Exposed thermal pad and 231 °C/W RθJA enable 400 mW total dissipation without derating at +70 °C ambient. |
| ESD-protected gate | ±2 kV HBM rating permits direct MCU GPIO connection without external protection components. |
Applications
| Smartphone Power Sequencing | Wireless Earbud Battery Management |
|---|---|
Use Scenario: Controlled power-up sequence for baseband processor, RF transceiver, and audio codec ICs during cold boot. IC Role / Device Role / Timing Role: Dual-channel load switch managing independent 1.2 V and 1.8 V domain enables with precise timing alignment. Use Value: Eliminates discrete MOSFETs and RC delay networks, reducing BOM count by 3 parts and saving 1.2 mm² PCB area. | Use Scenario: Isolating charging circuitry from main battery during firmware updates to prevent brownout resets. IC Role / Device Role / Timing Role: Dual N-MOSFET used as back-to-back switch to block reverse current and support bidirectional isolation. Use Value: 0.35 Ω RDS(ON) limits voltage drop to <105 mV at 300 mA, preserving 97% of available battery headroom. |
| Wearable Sensor Hub | USB-C Accessory Detection |
Use Scenario: Power gating individual MEMS accelerometers, gyroscopes, and environmental sensors to extend standby time. IC Role / Device Role / Timing Role: Low-threshold dual switch controlled by microcontroller GPIOs to enable/disable sensor supply rails. Use Value: 0.9 V VGS(TH) guarantees full enhancement using 1.2 V MCU outputs, avoiding partial turn-on and leakage-induced wakeups. | Use Scenario: Detecting accessory insertion/removal by monitoring CC line pull-down state in USB-C receptacles. IC Role / Device Role / Timing Role: One channel acts as configurable pull-down switch; second channel isolates legacy USB 2.0 data lines during alternate mode negotiation. Use Value: Dual independent gates allow simultaneous but decoupled control of CC and D+/D− paths, meeting USB-IF electrical compliance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2005LSD-7 | Same die, larger SOT-363 package (2.1 × 2.3 mm); RDS(ON) identical but RθJA = 290 °C/W. | Less suitable for ultra-dense layouts; better for hand-soldering or thermal testing due to larger pad access. | Select when manual rework or thermal characterization is prioritized over miniaturization. |
| AOB2018L | Single-channel 20 V N-MOSFET in 1.3×1.0 mm DFN; RDS(ON) = 0.32 Ω @ 4 V but requires two units for dual function. | No integrated dual topology; increases layout complexity and routing congestion in tight spaces. | Choose only if channel independence demands separate thermal zones or asymmetric drive requirements. |
Compared with DMN2005LSD-7 and AOB2018L, the DMN2005DLP4K-7 uniquely combines dual-channel functionality, 1.3×1.0 mm footprint, and 0.35 Ω RDS(ON) in a single thermally optimized package-making it optimal for space- and efficiency-critical wearable and portable power designs.
Availability
DMN2005DLP4K-7 is available at Aetrix Electronics and suitable for smartphone power sequencing, wireless earbud battery management, wearable sensor hub power gating, and USB-C accessory detection requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN2005DLP4K-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN2005DLP4K-7 belongs to Diodes' logic-level dual MOSFET product line, engineered specifically for ultra-compact, low-voltage power switching in battery-powered consumer electronics where board space and energy efficiency are primary constraints.
FAQ
What is the maximum continuous drain current per channel at 85°C ambient?
At TA = 85°C, the DMN2005DLP4K-7 supports 220 mA continuous drain current per channel. This is derived from its 400 mW total power dissipation limit and 231 °C/W thermal resistance, resulting in ~52°C junction rise above ambient, staying within the 150°C TJ(max) rating.
Can this device be used in a back-to-back configuration for AC blocking?
Yes - the DMN2005DLP4K-7's dual N-channel structure and matched characteristics allow implementation of a back-to-back switch for bidirectional DC blocking. Its 20 V VDSS and low RDS(ON) ensure minimal forward voltage drop and robust reverse-bias capability up to ±17 V.
Is the exposed thermal pad electrically connected to any internal node?
No - the exposed thermal pad in the X2-DFN1310-6 package is electrically isolated and intended solely for thermal conduction. It must be soldered to a dedicated PCB thermal plane with no electrical connection to source, drain, or ground unless explicitly designed as such in the layout.
Does the device meet automotive AEC-Q101 qualification?
No - the DMN2005DLP4K-7 is not AEC-Q101 qualified. It is specified for commercial and industrial temperature ranges (–65°C to +150°C), but lacks the stress test reporting, failure analysis documentation, and lot traceability required for automotive-grade qualification.
DMN2005DLP4K-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 300mA
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id:
- 900mV @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- 400mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1310-6 (Type B)
DMN2005DLP4K-7 FAQ
1.How can I place an order for DMN2005DLP4K-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2005DLP4K-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2005DLP4K-7 reliable?
The price and inventory of DMN2005DLP4K-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2005DLP4K-7 is usually 5 days.
3.What payment methods are accepted for DMN2005DLP4K-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2005DLP4K-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2005DLP4K-7?
DMN2005DLP4K-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2005DLP4K-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2005DLP4K-7?
For technical support, including DMN2005DLP4K-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2005DLP4K-7 requirements.
6.How does Aetrix verify that DMN2005DLP4K-7 is sourced from the original manufacturer or authorized distributors?
All DMN2005DLP4K-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2005DLP4K-7 meets industry standards.
7.What is the process for return or replacement of DMN2005DLP4K-7?
All DMN2005DLP4K-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2005DLP4K-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2005DLP4K-7 part is unused and in its original packaging.
Return procedure for DMN2005DLP4K-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2005DLP4K-7 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
