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Diodes Incorporated DMN2005UFGQ-13
- Part No.:
- DMN2005UFGQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN2005UFGQ-13.pdf
- Description:
- MOSFET N-CH 20V 18A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:4,077
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Product details
Overview
DMN2005UFGQ-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 50A continuous drain current at VGS = 4.5V, with RDS(ON) = 4.6 mΩ, AEC-Q101 qualified, and designed for automotive motor control and load switching applications.
For engineers reviewing the DMN2005UFGQ-13 datasheet, DMN2005UFGQ-13 pinout, DMN2005UFGQ-13 application, or DMN2005UFGQ-13 equivalent, key selection criteria include low-voltage gate drive compatibility (2.5V–4.5V), thermally efficient small-form-factor packaging, and robust unclamped inductive switching performance in automotive-grade power stages.
Technical Context
This MOSFET features a trench-gate silicon process optimized for low RDS(ON) at low gate voltages, enabling efficient operation in 3.3V/5V logic-driven automotive subsystems. Its 100% production-tested UIS capability ensures reliability under transient inductive loads typical in motor drivers and DC-DC converters.
The PowerDI3333-8 package delivers 6.1°C/W junction-to-case thermal resistance and supports 2.27W steady-state dissipation on 2oz copper FR-4 with thermal bias-enabling high-current density designs without external heatsinking in space-constrained modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Supports 12V automotive battery rail with margin against load-dump transients |
| RDS(ON) @ 4.5V | 4.6 mΩ - Enables <1.2W conduction loss at 16A, critical for thermally constrained motor H-bridges |
| ID (TC = 25°C) | 50 A - Sustains peak motor startup currents without derating in compact PCB layouts |
| Qg @ 4.5V | 68.8 nC - Low gate charge reduces driver power and switching losses in 100–500 kHz DC-DC topologies |
| EAS | 58.4 mJ - Confirmed avalanche energy rating ensures survivability during inductive turn-off in load-switch FETs |
| TJ Range | −55°C to +150°C - Full operational range validated for under-hood automotive environments |
Pinout & Package
Package: PowerDI3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad, occupying 33% board area of SO-8, UL 94V-0 molded compound, matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Internally paralleled pins forming low-inductance, high-current path to exposed thermal pad |
| 8 | Source (S) | Single-source connection for return path; requires dedicated ground plane routing |
| Gate (G) | Control terminal | Located between pins 7 and 8 per top-view marking; requires <100Ω series resistor to suppress ringing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 2.5V | 8.7 mΩ - Enables direct drive from 3.3V microcontrollers in battery-powered ECUs |
| 100% UIS tested | 23.9 A avalanche current, 58.4 mJ energy - Eliminates need for external snubbers in brushed motor drivers |
| Thermal efficiency | RθJC = 6.1°C/W - Allows >2× power density vs. SO-8 in same footprint with identical cooling |
| AEC-Q101 qualification | PPAP-capable, −55°C to +150°C operation - Meets automotive functional safety requirements for ASIL-B systems |
Applications
| Automotive Motor Control | High-Density Load Switching |
|---|---|
Use Scenario: Driving 12V brushed DC motors in power seats, HVAC actuators, and window lift modules. IC Role / Device Role / Timing Role: High-side or low-side switch in half-bridge configuration, controlled by PWM from MCU. Use Value: 4.6 mΩ RDS(ON) limits I²R heating to <1.5W at 18A stall current, enabling fanless enclosure design. | Use Scenario: Solid-state replacement for mechanical relays in battery disconnect and ECU power domain management. IC Role / Device Role / Timing Role: Single N-channel load switch with integrated body diode for reverse-polarity protection. Use Value: 2.6A continuous body diode current supports bidirectional energy recovery during hot-swap events. |
| Automotive DC-DC Converters | Start-Stop System Power Management |
Use Scenario: Synchronous rectifier in 12V-to-5V/3.3V buck converters for infotainment and ADAS modules. IC Role / Device Role / Timing Role: Low-side synchronous FET operating at 300 kHz with 68.8 nC gate charge. Use Value: Low Qg and fast tF = 38 ns reduce switching losses by 22% vs. comparable SO-8 devices at 500 kHz. | Use Scenario: Main battery isolation switch in engine start-stop systems handling repeated 100A cranking pulses. IC Role / Device Role / Timing Role: High-current, low-RDS(ON) main power switch with AEC-Q101 reliability validation. Use Value: 130A pulsed drain rating and 100% UIS testing ensure survival across 100,000+ cold-cranking cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2005LFGQ-7 | Same die, SO-8 package; RDS(ON) = 5.2 mΩ @ 4.5V; RθJA = 62°C/W | Larger footprint, lower current density, higher thermal resistance | Select when legacy SO-8 layout reuse is required and board area is not constrained. |
| IPB017N10N5ATMA1 | 100V rating, RDS(ON) = 1.7 mΩ @ 10V; requires 5V gate drive; no AEC-Q101 documentation | Higher voltage headroom but incompatible with 3.3V logic drive and unqualified for automotive PPAP | Select only for non-automotive 12V industrial DC-DC where 100V surge margin is mandatory. |
Compared with DMN2005LFGQ-7, the DMN2005UFGQ-13 offers 33% smaller footprint and 2.2× better thermal resistance; versus IPB017N10N5ATMA1, it provides guaranteed AEC-Q101 compliance and 2.5V gate compatibility at the cost of lower voltage rating-making it optimal for space- and reliability-critical automotive 12V power stages.
Availability
DMN2005UFGQ-13 is available at Aetrix Electronics and suitable for automotive motor control, high-density load switching, and start-stop system power management requiring stable component supply and full AEC-Q101 traceability.
Supply support for DMN2005UFGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMN2005UFGQ-13 belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for low-voltage, high-current automotive power switching where thermal density, gate-drive flexibility, and production-level UIS robustness are mandatory.
FAQ
What is the maximum continuous drain current at 70°C case temperature?
The DMN2005UFGQ-13 supports 40A continuous drain current at TC = +70°C with VGS = 4.5V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI3333-8 package under sustained high-power operation without forced airflow or heatsinking.
Is the body diode rated for continuous conduction in synchronous rectifier applications?
Yes-the device specifies a maximum continuous body diode forward current (IS) of 2.6A at TA = +25°C. For synchronous rectification, this rating applies only to the intrinsic body diode; external control must ensure gate drive prevents cross-conduction and manages reverse recovery charge (QRR = 8.5 nC).
Does the PowerDI3333-8 package require solder paste stencil adjustments versus SO-8?
Yes-PowerDI3333-8 uses a single large exposed drain pad (pins 1–7) requiring a 70–80% aperture ratio stencil opening and optimized reflow profile to ensure void-free thermal pad wetting. Recommended pad dimensions are D2 = 2.27 mm and E2 = 1.61 mm per Diodes' package outline document DS41561.
How is the 100% UIS test implemented in production?
Each DMN2005UFGQ-13 unit undergoes unclamped inductive switching stress at L = 0.2 mH, IAS = 23.9 A, and EAS = 58.4 mJ during final test. This verifies avalanche ruggedness without reliance on statistical sampling, ensuring every device meets automotive-grade reliability for inductive load switching.
DMN2005UFGQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 4.6mOhm @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 164 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6495 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.05W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMN2005UFGQ-13 FAQ
1.How can I place an order for DMN2005UFGQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2005UFGQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2005UFGQ-13 reliable?
The price and inventory of DMN2005UFGQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2005UFGQ-13 is usually 5 days.
3.What payment methods are accepted for DMN2005UFGQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2005UFGQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2005UFGQ-13?
DMN2005UFGQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2005UFGQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2005UFGQ-13?
For technical support, including DMN2005UFGQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2005UFGQ-13 requirements.
6.How does Aetrix verify that DMN2005UFGQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN2005UFGQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2005UFGQ-13 meets industry standards.
7.What is the process for return or replacement of DMN2005UFGQ-13?
All DMN2005UFGQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2005UFGQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2005UFGQ-13 part is unused and in its original packaging.
Return procedure for DMN2005UFGQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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