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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2005UPS-13

Name: DMN2005UPS-13
Brand: Diodes Incorporated
SKU: DMN2005UPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2005UPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMN2005UPS-13.pdf

Description:: MOSFET N-CH 20V 20A POWERDI5060

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN2005UPS-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 100A continuous drain current at TC = +25°C, with R_DS(ON) of 4.6 mΩ @ V_GS = 4.5V and 8.7 mΩ @ V_GS = 2.5V. It serves as a high-current load switch in notebook battery power management systems where low conduction loss and fast switching are critical.

For engineers reviewing the DMN2005UPS-13 datasheet, DMN2005UPS-13 pinout, DMN2005UPS-13 application, or DMN2005UPS-13 equivalent, key selection criteria include its thermally efficient PowerDI5060-8 package, sub-1.1mm profile for thin designs, JEDEC-qualified reliability, and gate threshold voltage range (0.4–1.2 V) enabling compatibility with 2.5V/3.3V logic-level drive.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while preserving fast switching performance-evidenced by Q_g = 60 nC @ V_GS = 4.5V and t_F = 52 ns. Its body diode exhibits t_RR = 17.8 ns and Q_RR = 8.6 nC under IF = 13.5A, di/dt = 100 A/μs, supporting synchronous rectification in DC-DC converters.

The device operates across –55°C to +150°C junction temperature, with R_θJC = 1.5°C/W and R_θJA = 51°C/W (2 oz copper, thermal bias), enabling high-power density integration in space-constrained battery management modules without external heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Supports input rails up to 19.8 V with 10% margin for transient spikes in portable power systems.
R_DS(ON)	4.6 mΩ @ V_GS = 4.5V - Delivers <1.2 W conduction loss at 13.5 A, critical for thermal budget in ultra-thin notebooks.
I_D (continuous)	100 A @ T_C = +25°C - Enables single-device replacement of dual-SO-8 MOSFETs in high-current load-switch applications.
Q_g	60 nC @ V_GS = 4.5V - Reduces gate drive power and enables use with low-current controllers in battery protection ICs.
t_F	52 ns - Limits switching energy loss during turn-off, improving efficiency in 300–500 kHz DC-DC converters.
V_GS(TH)	0.4–1.2 V - Ensures reliable turn-on with 2.5V GPIO or dedicated battery monitor outputs without level-shifting.
C_iss	5337 pF - Predictable input capacitance simplifies gate driver sizing and EMI filtering in compact PCB layouts.

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced 8-pin surface-mount package with exposed drain paddle, 1.0 mm nominal height, UL 94V-0 molded compound, and matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain Connection	All eight pins are internally connected to the drain terminal and the exposed bottom paddle - provides low-inductance, high-current path and primary thermal conduction path to PCB.
Pin 1 (Source)	Source Terminal	Primary source connection point; routed separately from drain to enable Kelvin sensing in precision current monitoring circuits.
Pin 2 (Gate)	Control Input	Isolated gate terminal with low R_g = 0.7 Ω - minimizes gate ringing and supports clean 2.5V/3.3V logic-level switching.

Key Features

Feature	Design Value
Low R_DS(ON) at 2.5V drive	8.7 mΩ @ V_GS = 2.5V - Enables direct interface with battery fuel gauges and system power controllers without gate boosting.
Thermal resistance R_θJC	1.5°C/W - Allows >80W power dissipation before reaching 150°C junction limit when mounted on 1-inch² copper pad.
Body diode reverse recovery	t_RR = 17.8 ns, Q_RR = 8.6 nC - Reduces shoot-through risk and improves light-load efficiency in buck converter synchronous rectification.
Thin profile	1.1 mm max height - Fits within 1.2 mm Z-height constraints of modern ultrabook and tablet battery compartments.
JEDEC-qualified reliability	Qualified per AEC-Q standards for high-reliability operation - suitable for long-life consumer electronics requiring >5-year field stability.

Applications

Battery Protection Circuit

Notebook Load Switch

Use Scenario: Real-time overcurrent and short-circuit protection in lithium-ion battery packs using integrated protection ICs.

IC Role / Device Role: Primary high-side load switch controlled by battery management IC's discharge FET driver output.

Use Value: 4.6 mΩ R_DS(ON) limits voltage drop to <62 mV at 13.5 A, preserving pack voltage accuracy and minimizing heat generation during fault conditions.

Use Scenario: System-level power rail enable/disable for CPU/GPU VRMs or display backlight drivers in clamshell laptops.

IC Role / Device Role: High-current, logic-level-controlled main power switch placed between battery and system power domain.

Use Value: Sub-1.1 mm profile allows placement beneath keyboard assemblies; 100 A rating supports peak currents during wake-from-sleep transitions without derating.

DC-DC Synchronous Rectifier

Motor Driver Half-Bridge

Use Scenario: Secondary-side synchronous rectification in 12 V → 3.3 V/5 V buck converters powering USB-C PD ports.

IC Role / Device Role: Low-side synchronous rectifier paired with high-side controller IC in fixed-frequency PWM topology.

Use Value: Fast t_F = 52 ns and low Q_RR reduce dead-time losses and improve full-load efficiency by ≥1.2% versus Schottky alternatives.

Use Scenario: Compact fan or haptic motor driver in thin client devices requiring bidirectional control and stall protection.

IC Role / Device Role: Low-side switch in half-bridge configuration driven by dedicated gate driver IC.

Use Value: V_GS(TH) down to 0.4 V ensures robust turn-on even with degraded gate drive due to PCB trace inductance or supply droop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2005LPS-13	Same die, PowerDI3333-8 package (3.3 × 3.3 mm); R_DS(ON) = 5.2 mΩ @ 4.5 V; lower I_D = 60 A.	Smaller footprint but higher R_DS(ON) and reduced thermal mass - suited for space-limited but lower-current (<40 A) applications.	Select when board area is constrained and peak current remains below 40 A; avoid for >60 A sustained loads.
SiR20DP	20 V, 100 A, PowerPAK® SO-8; R_DS(ON) = 3.8 mΩ @ 4.5 V; Q_g = 72 nC; taller 1.6 mm profile.	Lower R_DS(ON) but larger footprint and height - better for thermal headroom, worse for Z-height-sensitive designs.	Choose when maximum efficiency is prioritized over mechanical thickness; verify PCB keep-out for 1.6 mm height.

Compared with DMN2005LPS-13, DMN2005UPS-13 delivers 13% lower R_DS(ON) and 67% higher current rating in a slightly larger but thermally superior package; versus SiR20DP, it trades 1.2 mΩ lower R_DS(ON) for 0.5 mm lower profile and 17% lower Q_g, favoring thin, high-frequency designs.

Availability

DMN2005UPS-13 is available at Aetrix Electronics and suitable for notebook battery protection, DC-DC converter synchronous rectification, and motor control applications requiring stable component supply, JEDEC-qualified reliability, and sub-1.1 mm Z-height compliance.

Supply support for DMN2005UPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This part belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power management in portable computing and battery-powered systems.

FAQ

What is the maximum safe operating junction temperature for DMN2005UPS-13?

The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating curves in Figure 6 show R_DS(ON) increases ~1.8× from –55°C to +150°C at fixed V_GS, requiring thermal design to maintain T_J ≤ 135°C for 10-year reliability in consumer applications.

Can DMN2005UPS-13 be used in automotive applications?

No - DMN2005UPS-13 is not AEC-Q200 qualified and lacks PPAP documentation or IATF 16949 manufacturing certification. For automotive-grade equivalents, Diodes offers the Q-suffix variant DMN2005UPSQ-13, which meets AEC-Q101 requirements and is produced in IATF-certified facilities.

How does the PowerDI5060-8 package improve thermal performance over SO-8?

PowerDI5060-8 integrates an exposed drain paddle directly soldered to a large PCB copper area, achieving R_θJA = 51°C/W (vs. ~62°C/W for standard SO-8) and R_θJC = 1.5°C/W (vs. ~3.5°C/W). This reduces junction-to-board thermal resistance by >55%, allowing 2.5× higher power dissipation before reaching thermal shutdown in identical layout conditions.

Is the gate threshold voltage stable across temperature?

Yes - Figure 8 shows V_GS(TH) decreases linearly from ~1.15 V at –55°C to ~0.55 V at +150°C (ID = 250 μA), with typical variation ±0.2 V across the full range. This negative temperature coefficient aids current sharing in parallel configurations and prevents thermal runaway during overload events.

DMN2005UPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 13.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 142 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 5337 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8

DMN2005UPS-13 FAQ

1.How can I place an order for DMN2005UPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2005UPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2005UPS-13 reliable?

The price and inventory of DMN2005UPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2005UPS-13 is usually 5 days.

3.What payment methods are accepted for DMN2005UPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2005UPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2005UPS-13?

DMN2005UPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2005UPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2005UPS-13?

For technical support, including DMN2005UPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2005UPS-13 requirements.

6.How does Aetrix verify that DMN2005UPS-13 is sourced from the original manufacturer or authorized distributors?

All DMN2005UPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2005UPS-13 meets industry standards.

7.What is the process for return or replacement of DMN2005UPS-13?

All DMN2005UPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2005UPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2005UPS-13 part is unused and in its original packaging.

Return procedure for DMN2005UPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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