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Diodes Incorporated DMN2008LFU-13
- Part No.:
- DMN2008LFU-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
DMN2008LFU-13.pdf
- Description:
- MOSFET 2N-CH 20V 14.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,884
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Product details
Overview
DMN2008LFU-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2030-6 (Type B) package, rated for 20V VDSS, 5.4mΩ RDS(ON) at VGS = 4.5V, and 14.5A continuous drain current at TA = +25°C. It integrates two independent MOSFETs with ESD-protected gates and low gate threshold voltage (0.5–1.5V), enabling efficient load switching in compact battery-powered systems.
For engineers reviewing the DMN2008LFU-13 datasheet, DMN2008LFU-13 pinout, DMN2008LFU-13 application, or DMN2008LFU-13 equivalent, key selection criteria include its dual-channel layout, sub-1V gate threshold enabling 3.3V logic drive, low Ciss (1418pF), fast switching times (tD(ON) = 277ns), and thermal resistance of 73°C/W under enhanced PCB layout.
Technical Context
This dual MOSFET supports independent channel control with separate source, drain, and gate terminals per channel. Its low RDS(ON) across VGS = 2.5–4.5V enables stable conduction in low-voltage power rails, while fast turn-off delay (1989ns) and low Qgd (4.4nC) reduce switching losses in high-frequency DC-DC stages.
The device features integrated gate protection diodes and ESD-rated gate structure (HBM >2kV), ensuring robustness against transient events in portable electronics. Its U-DFN2030-6 (Type B) package delivers 12°C/W junction-to-case thermal resistance and supports solder reflow per MIL-STD-202, Method 208.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum drain-source blocking voltage for 3.3V/5V system-level load switching |
| RDS(ON) | 5.4mΩ @ VGS = 4.5V - Enables <100mW conduction loss at 10A, critical for thermally constrained PCBs |
| ID (max) | 14.5A @ TA = +25°C - Sustains peak load currents in USB-C PD and multi-cell battery packs |
| VGS(TH) | 0.5–1.5V - Guarantees full enhancement with 1.8V/3.3V GPIOs without level-shifting circuitry |
| Ciss | 1418pF @ VDS = 10V - Limits gate drive power requirement in high-side synchronous rectification |
| tD(OFF) | 1989ns - Supports PWM frequencies up to ~250kHz with controlled fall-time energy dissipation |
| RθJA | 73°C/W (with 1-in² copper) - Allows 1.7W power dissipation at ≤85°C ambient in standard FR-4 layouts |
Pinout & Package
Package: U-DFN2030-6 (Type B), 2.0mm × 3.0mm × 0.6mm, lead-free NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Independent control input; accepts 0.5–12V logic; ESD-protected |
| S1 | Source of Channel 1 | Common source node for Channel 1; electrically isolated from S2 |
| D1 | Drain of Channel 1 | High-current output path; rated for 14.5A continuous, 75A pulsed |
| G2 | Gate of Channel 2 | Independent control input; identical electrical specs to G1 |
| S2 | Source of Channel 2 | Common source node for Channel 2; isolated from S1 and thermal pad |
| D2 | Drain of Channel 2 | Second high-current output path; fully decoupled from D1 for dual-rail operation |
Key Features
| Feature | Design Value |
|---|---|
| Low on-resistance at low VGS | 6.4mΩ @ VGS = 3.7V - Reduces conduction loss in 3.3V-controlled battery disconnect circuits |
| Fast switching with low Qgd | 4.4nC gate-drain charge - Minimizes Miller plateau duration during hard-switching transitions |
| ESD-protected gate | HBM >2kV - Eliminates need for external gate protection in handheld device designs |
| Thermally optimized package | RθJC = 12°C/W - Enables direct thermal coupling to inner-layer copper planes for high-power density |
| Green, RoHS-compliant construction | <900ppm Br/Cl, <1000ppm Sb - Meets IPC-1752A Class 2 reporting requirements for automotive and medical OEMs |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Dual-MOSFET configuration in smart battery packs to isolate cells during overvoltage, overtemperature, or short-circuit events. IC Role / Device Role / Timing Role: Primary load switch controlling bidirectional current flow between cell stack and system bus. Use Value: Low 5.4mΩ RDS(ON) minimizes voltage drop during 10–12A discharge, preserving state-of-charge accuracy and runtime. |
Use Scenario: Dual-path power routing in USB-C PD sink devices supporting simultaneous 5V/9V/15V/20V input negotiation. IC Role / Device Role / Timing Role: Independent high-side switches selecting between alternate input rails or enabling redundant power paths. Use Value: Sub-1V VGS(TH) ensures reliable turn-on with 3.3V microcontroller GPIOs, eliminating level-shifters and reducing BOM count. |
| Portable Medical Monitor Load Switch | Wireless Earbud Charging Case |
|
Use Scenario: Isolating sensitive analog front-end circuitry from noisy digital subsystems during sleep mode. IC Role / Device Role / Timing Role: Low-leakage (1μA IDSS) power gate enabling <10μA system standby current. Use Value: 1.0μA max gate leakage and 1.0W power rating allow safe operation under extended battery life testing per IEC 62304. |
Use Scenario: Managing charging current distribution between left/right earbud batteries and case battery during wired/wireless charging cycles. IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent enable control per earbud bay. Use Value: Matched RDS(ON) channels ensure balanced charging current sharing (<±3% mismatch), preventing cell imbalance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2008LFG-7 | Same die, but in U-DFN2020-6 (Type A) package; 1.95mm × 1.95mm footprint; RθJA = 121°C/W (no thermal pad) | Higher thermal resistance limits continuous current to 9.5A; suitable only for space-constrained, low-duty-cycle uses | Select when board area is prioritized over thermal performance and peak current capability |
| SI2302CDS-T1-GE3 | Single N-channel, 20V, 85mΩ @ 2.5V, SOT-23; no dual-channel integration or ESD protection | Requires two devices plus external gate protection for dual-path function; increases layout area by 3× | Select only if dual-channel integration is unnecessary and cost-per-channel is the dominant constraint |
Compared with DMN2008LFU-13, DMN2008LFG-7 trades thermal performance for smaller footprint, while SI2302CDS-T1-GE3 lacks dual-channel integration and gate ESD protection-making DMN2008LFU-13 the only option supporting compact, robust, single-package dual-load switching at ≤20V.
Availability
DMN2008LFU-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and portable medical monitor load switching requiring stable component supply and consistent parametric performance across production lots.
Supply support for DMN2008LFU-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The DMN2008LFU belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for space-constrained, battery-operated applications demanding ultra-low gate drive voltage and minimal conduction loss.
FAQ
What is the maximum allowable gate-source voltage for DMN2008LFU-13?
The absolute maximum VGS is ±12V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 0–10V with transient clamping, especially in noisy environments where ringing may cause overshoot beyond 12V.
Can DMN2008LFU-13 operate reliably at VGS = 2.5V?
Yes: RDS(ON) is specified at 9.6mΩ with VGS = 2.5V and ID = 5.5A. At 10.5A, it delivers 10.5A continuous current under that condition. This makes it suitable for direct drive from 2.5V or 3.3V microcontrollers without gate drivers.
Is the thermal pad on the U-DFN2030-6 (Type B) package electrically connected?
No-the exposed thermal pad (pin #6 in the bottom view) is not internally connected to any terminal. It must be soldered to a dedicated PCB thermal plane for heat dissipation but may remain floating electrically. No internal short exists between the pad and S1/S2/D1/D2/G1/G2.
Does DMN2008LFU-13 integrate body diodes, and what is their forward voltage?
Yes-each channel includes an intrinsic body diode. The typical VSD is 0.7V at IS = 11A and TJ = 25°C, rising to 1.2V maximum. These diodes support reverse-current paths in H-bridge or OR-ing configurations but are not rated for avalanche energy recovery.
DMN2008LFU-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 14.5A
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1418pF @ 10V
- Power - Max:
- 1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2030-6 (Type B)
DMN2008LFU-13 FAQ
1.How can I place an order for DMN2008LFU-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2008LFU-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2008LFU-13 reliable?
The price and inventory of DMN2008LFU-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2008LFU-13 is usually 5 days.
3.What payment methods are accepted for DMN2008LFU-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2008LFU-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2008LFU-13?
DMN2008LFU-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2008LFU-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2008LFU-13?
For technical support, including DMN2008LFU-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2008LFU-13 requirements.
6.How does Aetrix verify that DMN2008LFU-13 is sourced from the original manufacturer or authorized distributors?
All DMN2008LFU-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2008LFU-13 meets industry standards.
7.What is the process for return or replacement of DMN2008LFU-13?
All DMN2008LFU-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2008LFU-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2008LFU-13 part is unused and in its original packaging.
Return procedure for DMN2008LFU-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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