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Diodes Incorporated DMN2008LFU-7
- Part No.:
- DMN2008LFU-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
DMN2008LFU-7.pdf
- Description:
- MOSFET 2N-CH 20V 14.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,090
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Product details
Overview
DMN2008LFU-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2030-6 (Type B) package, rated for 20V VDSS, 5.4mΩ RDS(ON) @ 4.5V VGS, and 14.5A continuous drain current at +25°C - optimized for high-efficiency load switching in compact battery-powered systems.
For engineers reviewing the DMN2008LFU-7 datasheet, DMN2008LFU-7 pinout, DMN2008LFU-7 application, or DMN2008LFU-7 equivalent, key selection criteria include low gate threshold (0.5–1.5V), fast switching (tD(ON) = 277ns), ESD-protected gate, and thermal resistance of 73°C/W under enhanced PCB layout - critical for space-constrained power management designs.
Technical Context
This dual MOSFET integrates two independent N-channel devices with matched characteristics in a single 2.0×3.0mm leadless package. Each channel features a low 0.5–1.5V gate threshold voltage and body diode with 0.7–1.2V forward drop at 11A, enabling reliable operation with 3.3V and 5V logic-level drive.
Its dynamic performance includes 1,418pF input capacitance, 106pF reverse transfer capacitance, and 18.7nC total gate charge at 4.5V - supporting efficient PWM control in DC-DC converters and battery protection circuits without external level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - supports input rails up to 16V with 20% margin for transient spikes in portable electronics. |
| RDS(ON) | 5.4mΩ @ 4.5V VGS - enables <100mW conduction loss at 14.5A, reducing thermal stress in 1W-rated layouts. |
| ID (max) | 14.5A @ +25°C - delivers full-rated current with standard FR-4 PCB and 1-inch copper pour per channel. |
| VGS(TH) | 0.5–1.5V - ensures turn-on with 1.8V/3.3V microcontroller GPIOs without gate drivers. |
| Ciss | 1418pF - balances switching speed and EMI; compatible with 1–10MHz PWM frequencies in buck regulators. |
| Qg | 18.7nC @ 4.5V - allows fast edge rates (<1µs rise/fall) with ≤10Ω gate resistor, minimizing switching losses. |
| RθJA | 73°C/W - requires minimal copper area for thermal management in handheld device PCBs. |
Pinout & Package
Package: U-DFN2030-6 (Type B), 2.0mm × 3.0mm × 0.6mm, lead-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Common source terminal for first MOSFET; electrically tied to exposed thermal pad for heat dissipation. |
| G1 | Gate of Channel 1 | Logic-level input for independent control of first channel; ESD-protected (±10μA leakage). |
| D1 | Drain of Channel 1 | High-side or low-side switch node; rated for 20V and 14.5A pulsed (75A). |
| D2 | Drain of Channel 2 | Independent second switch node; identical rating to D1 for dual-path load control. |
| G2 | Gate of Channel 2 | Separate logic input enabling asynchronous or synchronized dual-switching control. |
| S2 | Source of Channel 2 | Second source terminal; isolated from S1 - supports floating or common-source configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low on-resistance | 5.4mΩ @ 4.5V enables <100mW conduction loss at full rated current, reducing heatsink requirements. |
| Logic-level gate drive | 0.5–1.5V VGS(TH) ensures full enhancement with 1.8V/3.3V I/O, eliminating need for gate driver ICs. |
| ESD-protected gate | Integrated gate protection diode withstands ±10μA leakage and human-body-model ESD events per JEDEC JS-001. |
| Fast switching | 277ns turn-on delay + 653ns rise time supports >500kHz PWM in synchronous buck converters. |
| Thermally optimized package | U-DFN2030-6 exposes die attach pad as thermal path; achieves 73°C/W with 1-inch copper pour. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Dual-MOSFET configuration isolates battery terminals during overvoltage, overcurrent, or thermal fault conditions in Li-ion packs. IC Role / Device Role / Timing Role: Acts as back-to-back N-channel switch replacing P-channel + N-channel topology, enabling bidirectional blocking with single logic control. Use Value: Reduces board area by 40% vs discrete solutions while maintaining 20V fault tolerance and sub-100mΩ total path resistance. |
Use Scenario: Controls 5–20V power path between USB-C port and system rail in portable chargers and docks. IC Role / Device Role / Timing Role: Functions as low-loss, fast-turning load switch with integrated body diode for reverse-current blocking. Use Value: Achieves <150mV dropout at 3A and <1µs response to enable/disable commands - meeting USB PD 3.1 timing requirements. |
| Smartphone Power Management | Wireless Earbud Charging Case |
Use Scenario: Enables/disables power to camera modules, displays, or RF subsystems based on SoC sleep/wake states. IC Role / Device Role / Timing Role: Serves as logic-controlled power gate with ultra-low quiescent current (<1μA) and fast wake-up latency. Use Value: Cuts standby power by >95% versus always-on LDOs, extending battery life in multi-sensor mobile platforms. |
Use Scenario: Manages charging current flow from USB input to internal Li-ion cell and from cell to earbuds during wireless charging handoff. IC Role / Device Role / Timing Role: Dual-channel operation allows independent control of input and output paths with shared gate logic. Use Value: Eliminates need for two separate single-channel MOSFETs, saving 1.2mm² PCB area in sub-30mm form factor cases. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2008LFG-7 | Same die, but in U-DFN2020-6 (2.0×2.0mm) package with different pinout (S1/G1/D1/D2/G2/S2 → S1/G1/D1/S2/G2/D2); RθJA = 85°C/W. | Smaller footprint but higher thermal resistance; unsuitable for >10A continuous operation without aggressive cooling. | Select only when board area is constrained below 6mm² and peak current remains ≤8A. |
| SI6926ADQ-T1-GE3 | 20V dual N-MOSFET, but RDS(ON) = 8.5mΩ @ 4.5V, VGS(TH) = 0.7–1.3V, Qg = 22nC - higher conduction and switching loss. | Higher RDS(ON) increases junction temperature by ~15°C at 12A, limiting use in thermally dense wearables. | Acceptable for cost-sensitive designs where efficiency loss <0.5% is tolerable and thermal headroom exists. |
Compared with DMN2008LFU-7, DMN2008LFG-7 trades thermal performance for size reduction, while SI6926ADQ-T1-GE3 offers broader vendor availability at the expense of 57% higher RDS(ON) and slower switching - making DMN2008LFU-7 optimal for thermally demanding, high-density battery systems.
Availability
DMN2008LFU-7 is available at Aetrix Electronics and suitable for battery pack protection, USB-C power delivery switching, and smartphone subsystem power gating requiring stable component supply across high-mix consumer electronics production.
Supply support for DMN2008LFU-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
The DMN2008LFU-7 belongs to Diodes' logic-level dual MOSFET product line, engineered specifically for space-constrained, high-efficiency power switching in portable and battery-powered devices.
FAQ
What is the maximum continuous drain current per channel at +70°C ambient?
The DMN2008LFU-7 supports 11.5A continuous drain current per channel at +70°C ambient temperature when mounted on an FR-4 PCB with 1-inch square copper plate, as specified in the Absolute Maximum Ratings table under Note 6. This derating reflects thermal limits imposed by the 73°C/W RθJA and 150°C maximum junction temperature.
Can this device be used in a back-to-back configuration for AC blocking?
Yes - the DMN2008LFU-7's dual N-channel structure supports back-to-back connection (D1–S2 and D2–S1 tied together) to block bidirectional current flow, commonly used in battery protection ICs. Its matched RDS(ON) and symmetric breakdown voltage (20V) ensure balanced conduction and blocking in both directions without external components.
Is the exposed thermal pad electrically connected to any pin?
No - the exposed thermal pad (pin #7, center pad) is internally connected only to the MOSFET die substrate and is electrically isolated from all six signal pins. It must be soldered to a PCB thermal plane for effective heat dissipation but should not be shorted to S1, S2, or ground unless explicitly designed as a common-source thermal path.
Does the device require external gate resistors for stability?
A gate resistor of 4.7–10Ω is recommended to dampen ringing caused by 106pF Crss and PCB trace inductance, especially in high-frequency (>1MHz) switching applications. The datasheet confirms stable operation with Rg = 6Ω in timing measurements, and omitting it may cause overshoot exceeding ±12V VGS rating during fast transitions.
DMN2008LFU-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 14.5A
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250A
- Gate Charge (Qg) (Max) @ Vgs:
- 42.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1418pF @ 10V
- Power - Max:
- 1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2030-6 (Type B)
DMN2008LFU-7 FAQ
1.How can I place an order for DMN2008LFU-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2008LFU-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2008LFU-7 reliable?
The price and inventory of DMN2008LFU-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2008LFU-7 is usually 5 days.
3.What payment methods are accepted for DMN2008LFU-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2008LFU-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2008LFU-7?
DMN2008LFU-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2008LFU-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2008LFU-7?
For technical support, including DMN2008LFU-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2008LFU-7 requirements.
6.How does Aetrix verify that DMN2008LFU-7 is sourced from the original manufacturer or authorized distributors?
All DMN2008LFU-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2008LFU-7 meets industry standards.
7.What is the process for return or replacement of DMN2008LFU-7?
All DMN2008LFU-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2008LFU-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2008LFU-7 part is unused and in its original packaging.
Return procedure for DMN2008LFU-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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