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Diodes Incorporated DMN2009UFDF-13
- Part No.:
- DMN2009UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2009UFDF-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V U-DFN2020-6
- Quantity:
- Payment:
- Shipping:
Inventory:3,265
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Product details
Overview
DMN2009UFDF from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 9 mΩ RDS(ON) at VGS = 4.5V and 12.8 A continuous drain current at TA = +25°C. It serves as a low-profile, high-efficiency power switch in battery-powered and space-constrained DC-DC converter and load-switch applications.
For engineers reviewing the DMN2009UFDF datasheet, DMN2009UFDF pinout, DMN2009UFDF application, or DMN2009UFDF equivalent, this device is selected for its ultra-low on-resistance, sub-1V gate threshold, 0.6 mm profile, and compatibility with 2.5V logic-level drive in portable power management circuits.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for simultaneous low RDS(ON) and fast switching. Its 0.6 mm height and 2.0 × 2.0 mm footprint enable integration into ultra-thin PCBs where thermal resistance to ambient is constrained by minimal copper area.
The device features a gate threshold voltage range of 0.5–1.4 V, enabling reliable turn-on with 2.5 V microcontroller I/O, and exhibits 12.7 nC total gate charge at VGS = 4.5 V-supporting efficient PWM operation up to several MHz in synchronous buck stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for 3.3 V/5 V rail switching and USB PD input protection |
| RDS(ON) | 9 mΩ @ VGS = 4.5 V - Enables <100 mW conduction loss at 10 A, critical for thermal budget in sealed enclosures |
| ID (max) | 12.8 A @ TA = +25°C - Supports high-current load switching without external heatsinking on standard FR-4 |
| VGS(TH) | 0.5–1.4 V - Ensures full enhancement with 2.5 V logic, eliminating need for level-shifting circuitry |
| Qg | 12.7 nC @ VGS = 4.5 V - Low gate charge reduces driver power and enables high-frequency (>1 MHz) operation in compact converters |
| RθJA | 56 °C/W - Measured on FR-4 with minimum pad layout; defines junction-to-ambient rise under steady-state 1.7 W dissipation |
| Ciss | 1083 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements in high-dv/dt environments |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 mm × 2.0 mm × 0.6 mm, bottom-exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤1.4 V to fully enhance; low Ciss minimizes drive energy |
| 2 (S) | Source | Reference node for gate drive; tied to power ground plane; connects to thermal pad for heat transfer |
| 3 (D) | Drain | High-side or low-side power path; rated for 20 V blocking and 85 A pulsed current |
| 4 (S) | Source | Second source connection; parallel path to Pin 2 for reduced source inductance and improved current sharing |
| 5 (D) | Drain | Second drain connection; parallel path to Pin 3 for lower RDS(ON) and enhanced thermal spreading |
| 6 (D) | Drain | Third drain connection; completes symmetric 3× drain / 2× source layout for optimal current density distribution |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.6 mm) | Enables use in wearables and slim IoT modules where Z-height is limited to <1.0 mm |
| Low RDS(ON) at 2.5 V drive | 13 mΩ @ VGS = 2.5 V supports direct MCU GPIO control without gate drivers |
| Thermally enhanced U-DFN2020-6 | Bottom-exposed thermal pad reduces RθJA to 56 °C/W, improving power handling on 2 oz copper |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A Class 2 reporting; Br+Cl <1500 ppm, Sb <1000 ppm |
| RoHS 3 compliant (2015/863/EU) | No intentionally added lead, phthalates, or flame retardants beyond EU regulatory limits |
Applications
| USB-C Power Delivery Switch | Wireless Earbud Battery Protection |
|---|---|
Use Scenario: Bidirectional 20 V/3 A power path switching between USB-C port and battery in portable audio devices. IC Role / Device Role / Timing Role: Low-side load switch controlling battery charging and discharging paths with reverse-current blocking. Use Value: 9 mΩ RDS(ON) limits voltage drop to <30 mV at 3 A, preserving battery runtime and minimizing thermal rise in sealed earbud housing. | Use Scenario: Overcurrent and short-circuit protection for Li-ion cell during wireless charging and playback cycles. IC Role / Device Role / Timing Role: High-side eFuse switch with fast turn-off (<50 ns propagation delay implied by tF = 14.6 ns) for fault isolation. Use Value: 0.5–1.4 V VGS(TH) ensures precise trip point alignment with analog current-sense amplifiers, reducing false triggering. |
| Smartwatch PMIC Output Stage | Bluetooth Tracker Load Switch |
Use Scenario: Point-of-load (POL) switching for 1.8 V core rail powered from a 3.3 V buck converter output. IC Role / Device Role / Timing Role: Synchronous rectifier in integrated buck controller, operating at 2 MHz with low Qg. Use Value: 12.7 nC Qg at 4.5 V enables <100 mW gate drive loss at 2 MHz, supporting >92% efficiency in 2.0 × 2.0 mm footprint. | Use Scenario: Controlled power gating of GPS/GNSS receiver and BLE SoC during deep-sleep states. IC Role / Device Role / Timing Role: Low-quiescent-load enable switch with <1 μA IDSS leakage to extend 10-year battery life. Use Value: 1 μA max IDSS at 16 V ensures <16 nW off-state power, critical for coin-cell–powered trackers with 10-year shelf life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2012LFG-7 | RDS(ON) = 12 mΩ @ VGS = 4.5 V; higher threshold (0.6–1.5 V); same U-DFN2020-6 package | Slightly higher conduction loss; suitable where margin exists in thermal design | Select when cost sensitivity outweighs 3 mΩ RDS(ON) advantage and thermal headroom is ≥15°C |
| AO3414 | RDS(ON) = 12.5 mΩ @ VGS = 4.5 V; SOT-23 package; no thermal pad; RθJA = 150 °C/W | Higher thermal resistance limits continuous current to ~4 A; unsuitable for >5 A loads | Choose only for prototyping or low-current signal switching where board space allows larger SOT-23 footprint |
Compared with DMN2009UFDF, DMN2012LFG-7 trades 3 mΩ RDS(ON) for identical form factor and thermal performance, while AO3414 sacrifices thermal capability and current rating for legacy package compatibility-neither matches the 9 mΩ/0.6 mm/56 °C/W combination of the DMN2009UFDF.
Availability
DMN2009UFDF-13 is available at Aetrix Electronics and suitable for USB-C power delivery switches, wireless earbud battery protection circuits, and smartwatch PMIC output stages requiring stable component supply and long-term production continuity.
Supply support for DMN2009UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-voltage power switching in portable and battery-operated systems where size, thermal performance, and logic-level drive compatibility are critical.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The DMN2009UFDF supports 10.3 A continuous drain current at TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the U-DFN2020-6 package on standard FR-4 with minimum copper area, not device degradation.
Does this MOSFET require a gate resistor for stability in switching applications?
A gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop. The datasheet specifies tD(ON) and tF using RG = 1.8 Ω; typical designs use 1–10 Ω to balance switching speed and EMI, especially with 2.5 V logic drive.
Is the thermal pad electrically isolated or connected to the drain?
The bottom thermal pad is internally connected to the drain terminals (Pins 3, 5, and 6). It must be soldered to a PCB copper pour tied to the drain net to ensure both thermal performance and electrical integrity per the U-DFN2020-6 mechanical drawing.
Can this MOSFET be used in automotive applications?
The DMN2009UFDF is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMN2009UFDFQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation; standard DMN2009UFDF-13 is intended for commercial/industrial use only.
DMN2009UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27.9 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1083 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN2009UFDF-13 FAQ
1.How can I place an order for DMN2009UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2009UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2009UFDF-13 reliable?
The price and inventory of DMN2009UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2009UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMN2009UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2009UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2009UFDF-13?
DMN2009UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2009UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2009UFDF-13?
For technical support, including DMN2009UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2009UFDF-13 requirements.
6.How does Aetrix verify that DMN2009UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMN2009UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2009UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMN2009UFDF-13?
All DMN2009UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2009UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2009UFDF-13 part is unused and in its original packaging.
Return procedure for DMN2009UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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