My Inquiry
My Account
Diodes Incorporated DMN2009UFDF-7
- Part No.:
- DMN2009UFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2009UFDF-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V U-DFN2020-6
- Quantity:
- Payment:
- Shipping:
Inventory:9,839
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN2009UFDF from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 9 mΩ RDS(ON) at VGS = 4.5V, 12.8A continuous drain current at TA = +25°C, and low 0.6 mm profile. It serves as a high-efficiency power switch in compact DC-DC converters and load management circuits.
For engineers reviewing the DMN2009UFDF datasheet, DMN2009UFDF pinout, DMN2009UFDF application, or DMN2009UFDF equivalent, key selection criteria include its low gate threshold voltage (0.5–1.4 V), thermal resistance of 56 °C/W on FR-4 with thermal bias, and compatibility with 2.5V logic-level drive in space-constrained portable power systems.
Technical Context
This MOSFET employs a trench-gate process to achieve ultra-low RDS(ON) while maintaining fast switching performance: tD(ON) = 7 ns, tF = 14.6 ns, and Qg = 12.7 nC at VGS = 4.5V. Its body diode exhibits VSD = 0.7–1.2 V at IS = 8.5A, supporting synchronous rectification and reverse-current blocking.
The device operates across –55°C to +150°C junction temperature range, with RDS(ON) normalized to 1.0 at TJ = 25°C and rising to ~1.3× at 125°C under VGS = 4.5V. Its Ciss = 1083 pF and Crss = 110 pF enable stable operation in high-frequency buck regulators up to 2 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 3.3V/5V rail switching applications |
| RDS(ON) | 9 mΩ @ VGS = 4.5V - Enables <100 mW conduction loss at 10 A in 12 mm² PCB area |
| ID (max) | 12.8 A @ TA = +25°C - Supports >10 W load switching on standard FR-4 with 2 oz copper |
| VGS(TH) | 0.5–1.4 V - Ensures reliable turn-on with 1.8V/2.5V microcontroller GPIO without level-shifting |
| Qg | 12.7 nC @ VGS = 4.5V - Allows efficient gate driving with <10 mA average current at 1 MHz switching |
| RθJA | 56 °C/W - Achieved with thermal-bias pad layout; enables 1.7 W dissipation at ambient ≤70°C |
| Ciss | 1083 pF - Limits Miller-induced shoot-through risk in half-bridge configurations |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (S) | Primary current return path; tied to PCB thermal pad for enhanced heat dissipation |
| 2 (Gate) | Gate terminal (G) | Low-threshold control input; requires <1.4 V to initiate conduction |
| 3 (Drain) | Drain terminal (D) | High-side or low-side power path connection; rated for 20 V blocking |
| 4 (Source) | Source terminal (S) | Second source bond; paralleled with Pin 1 to reduce source inductance in high-dI/dt apps |
| 5 (Drain) | Drain terminal (D) | Second drain bond; reduces channel resistance and improves current sharing |
| 6 (Thermal Pad) | Exposed thermal pad | Electrically connected to source; must be soldered to inner-layer copper pour for RθJA = 56 °C/W |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.6 mm height - fits beneath 0.8 mm board-to-board connectors in wearable electronics |
| Minimal PCB footprint | 4 mm² area - enables dual-MOSFET layouts in <10 mm² total space for USB-C PD load switches |
| Logic-level gate drive | VGS(TH) max = 1.4 V - eliminates need for gate driver ICs when paired with 1.8V/2.5V MCUs |
| Enhanced thermal performance | RθJC = 9.6 °C/W - allows direct heat transfer from die to PCB plane via exposed pad |
| Green compliance | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets IPC-1752A Class 3 reporting |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side protection switch controlling discharge path between cell and system load. Use Value: 9 mΩ RDS(ON) limits voltage drop to <90 mV at 10 A, preserving battery runtime and enabling accurate coulomb counting. |
Use Scenario: VBUS path switching in USB-C receptacles supporting 3 A/20 V PD profiles. IC Role / Device Role / Timing Role: High-speed load switch enabling hot-plug detection and fault isolation. Use Value: 7 ns turn-on delay and 14.6 ns fall time support <50 µs response to CC-line fault signals per USB PD 3.1 spec. |
| Compact DC-DC Converter | IoT Sensor Node Power Gating |
|
Use Scenario: Synchronous rectifier in 1.2 MHz buck converter for PMIC output rails. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency. Use Value: 1083 pF Ciss and 110 pF Crss minimize gate-drive losses and EMI during 1.2 MHz transitions. |
Use Scenario: Power gating of BLE SoC peripherals during deep-sleep mode in coin-cell-powered sensors. IC Role / Device Role / Timing Role: Ultra-low-leakage enable switch isolating subsystems drawing <1 µA standby current. Use Value: IDSS ≤ 1 µA at VDS = 16 V ensures <10 nW leakage power, extending 10-year battery life targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2012LFG-7 | RDS(ON) = 12 mΩ @ VGS = 4.5V; higher 1.0 mm profile | Lower current rating (9.5 A) and reduced thermal performance (RθJA = 96.8 °C/W) | Preferred where cost sensitivity outweighs efficiency and size constraints |
| AO3414 | RDS(ON) = 7.5 mΩ @ VGS = 4.5V but larger SOT-23-3 package (2.9 × 1.3 × 1.0 mm) | Limited to ≤5 A continuous due to higher thermal resistance (RθJA = 150 °C/W) | Selected when legacy SOT-23 footprint compatibility is required over miniaturization |
Compared with DMN2009UFDF, DMN2012LFG-7 trades 33% higher RDS(ON) and double package height for lower unit cost, while AO3414 offers marginally lower on-resistance but sacrifices 3× PCB area and thermal capability-making DMN2009UFDF optimal for space- and efficiency-critical 2.5V-driven power switches.
Availability
DMN2009UFDF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and compact DC-DC converters requiring stable component supply and long-term industrial availability.
Supply support for DMN2009UFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, low-voltage power management in portable and space-constrained electronics.
FAQ
What is the maximum safe operating junction temperature for DMN2009UFDF?
The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A104. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating curves in Figure 13 confirm sustained 1.3 W dissipation only below +70°C ambient when using minimum pad layout; thermal-bias layout extends usable ambient range to +95°C.
Can DMN2009UFDF be used in a high-side configuration with 5V gate drive?
Yes-its ±12 V gate-source rating and 1.4 V maximum VGS(TH) ensure robust turn-on with 5V drive. However, high-side use requires a floating gate driver or charge pump, as the source potential rises with load. The device's low Qgd (1.4 nC) minimizes Miller plateau duration, reducing shoot-through risk during transition.
Is the thermal pad electrically isolated or connected to a specific terminal?
The exposed thermal pad is internally connected to the source (S) terminal, confirmed by the Equivalent Circuit diagram and mechanical drawings. It must be soldered to a PCB copper pour tied to the source net to achieve the specified RθJA = 56 °C/W; leaving it unconnected degrades thermal performance by >40%.
Does DMN2009UFDF meet automotive qualification standards out-of-the-box?
No-this part is not AEC-Q101 qualified. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing; users must contact Diodes directly for qualified alternatives like the AEC-Q101-compliant DMN2009UFDQ-7 variant.
DMN2009UFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27.9 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1083 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN2009UFDF-7 FAQ
1.How can I place an order for DMN2009UFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2009UFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2009UFDF-7 reliable?
The price and inventory of DMN2009UFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2009UFDF-7 is usually 5 days.
3.What payment methods are accepted for DMN2009UFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2009UFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2009UFDF-7?
DMN2009UFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2009UFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2009UFDF-7?
For technical support, including DMN2009UFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2009UFDF-7 requirements.
6.How does Aetrix verify that DMN2009UFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMN2009UFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2009UFDF-7 meets industry standards.
7.What is the process for return or replacement of DMN2009UFDF-7?
All DMN2009UFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2009UFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2009UFDF-7 part is unused and in its original packaging.
Return procedure for DMN2009UFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2009UFDF-7 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
