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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2011UFDE-13

Name: DMN2011UFDE-13
Brand: Diodes Incorporated
SKU: DMN2011UFDE-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2011UFDE-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-PowerUDFN

Datasheet:: DMN2011UFDE-13.pdf

Description:: MOSFET N-CH 20V 11.7A 6UDFN

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Product details

Overview

DMN2011UFDE-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 package, featuring 9.5mΩ R_DS(ON) @ V_GS = 4.5V, 11.7A continuous drain current at T_A = +25°C, and AEC-Q101 qualification for automotive-grade reliability-used as a low-profile power switch in DC-DC converter synchronous rectification and load switching.

For engineers reviewing the DMN2011UFDE-13 datasheet, DMN2011UFDE-13 pinout, DMN2011UFDE-13 application, or DMN2011UFDE-13 equivalent, key selection criteria include gate threshold voltage (0.4–1.0V), thermal resistance (64°C/W with copper pad), ESD-protected gate, and 0.6mm profile suitability for space-constrained PCB layouts.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(ON) while maintaining fast switching performance: t_D(on) = 3.6–6ns, t_D(off) = 21.6–33ns, and Q_g = 24–36nC at V_GS = 4.5V. Its body diode exhibits T_rr = 12.8–20ns and Q_rr = 6.9–11nC under IF = 8.5A, di/dt = 210A/μs conditions.

The device operates across –55°C to +150°C junction temperature range, supports ±12V gate-source voltage, and delivers 18A avalanche current (I_AS) with 17mJ single-pulse avalanche energy (E_AS)-enabling robust operation in transient-overload scenarios without external protection circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20V - Maximum blocking voltage before breakdown; defines safe operating range in 12V automotive and 5V/3.3V logic-supply systems.
R_DS(ON)	9.5mΩ @ V_GS = 4.5V - Enables <100mW conduction loss at 10A, critical for high-efficiency buck converter output stages.
I_D (continuous)	11.7A @ T_A = +25°C - Supports high-current load switching in compact portable electronics and USB PD power paths.
V_GS(th)	0.4–1.0V - Ensures reliable turn-on with 1.8V/2.5V logic-level drivers, eliminating need for gate boosters in low-voltage microcontroller interfaces.
Q_g	24–36nC @ V_GS = 4.5V - Determines gate drive power requirement and switching speed; enables >1MHz operation with moderate gate resistance.
R_θJA	64°C/W (with 1-inch² copper) - Defines thermal derating curve; allows 1.97W dissipation at ambient +25°C, supporting high-duty-cycle applications.
T_J range	–55°C to +150°C - Qualified per AEC-Q101; suitable for under-hood automotive modules and industrial motor control environments.

Pinout & Package

Package: U-DFN2020-6 (2.0mm × 2.0mm × 0.6mm), molded plastic with NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 rated.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; ESD-protected input requiring ≤±12V drive; low V_GS(th) enables direct MCU GPIO connection.
Pins 2 & 3 (S)	Source	Power return path; dual-source configuration reduces package inductance and improves current sharing in high-frequency switching.
Pins 4 & 5 (D)	Drain	Main current-carrying terminal; connected internally to die backside; requires thermal pad on PCB for heat dissipation.
Pin 6 (S)	Source	Third source connection; enhances thermal and electrical symmetry; must be tied to common source node with Pins 2 & 3.

Key Features

Feature	Design Value
Low-profile U-DFN2020-6 package	0.6mm height enables use in ultra-thin consumer devices and stacked PCB assemblies where Z-axis clearance is constrained.
ESD-protected gate	HBM rating ≥2kV (per AEC-Q101); eliminates need for external gate protection diodes in production designs.
Lead-free & halogen-free "Green" construction	Complies with RoHS 2 (2011/65/EU) and JEDEC JS709B; bromine/chlorine <900ppm each, antimony <1000ppm.
Optimized R_DS(ON)/Q_g ratio	9.5mΩ / 24nC = 0.396mΩ·nC - balances conduction and switching losses for 500kHz–2MHz DC-DC converters.
AEC-Q101 qualification	Stress-tested for automotive reliability: HTGB, HTRB, TC, AC/DC life test, and ESD per JESD22-A114/A115.

Applications

USB Type-C Power Delivery Switch

Automotive Body Control Module

Use Scenario: Bidirectional 20V/3A power path switching in USB PD 3.0 sink applications with reverse-current blocking.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier and load switch controlling VBUS routing between port controller and battery charger IC.

Use Value: 9.5mΩ R_DS(ON) limits I²R loss to <95mW at 3A, enabling thermally passive design in 4mm² footprint.

Use Scenario: 12V supply rail switching for LED lighting, window lift motors, and HVAC actuators in BCM subassemblies.

IC Role / Device Role / Timing Role: High-reliability N-channel load switch replacing mechanical relays; driven by 3.3V CAN/LIN transceiver GPIOs.

Use Value: 0.4–1.0V gate threshold ensures full enhancement with 3.3V logic; AEC-Q101 qualification guarantees 15-year field life.

Portable Medical Sensor Hub

Industrial IoT Edge Node Power Management

Use Scenario: Isolated power sequencing for multi-rail sensor subsystems (ECG, SpO₂, temperature) in battery-powered diagnostic wearables.

IC Role / Device Role / Timing Role: Precision-controlled enable switch for 3.3V/1.8V LDO inputs, minimizing standby leakage via tight V_GS(th) distribution.

Use Value: 1µA max I_DSS at +25°C and 100µA at +150°C ensures <10nA system-level quiescent current contribution.

Use Scenario: Remote 24V-to-5V/3.3V conversion in wireless sensor nodes deployed in factory automation cabinets.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback converter; handles 10A peak currents during burst-mode operation.

Use Value: 18A I_AS and 17mJ E_AS withstand repetitive line transients without failure, reducing need for snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011LFG-7	Same die, but in leaded SOT-23-6 package; R_DS(ON) identical, but R_θJA = 120°C/W (no thermal pad).	Preferred for prototyping or low-volume manual assembly; unsuitable for high-power density layouts.	Select when board reworkability or legacy footprint compatibility outweighs thermal performance needs.
NTMFS4C06NT1G	25V rating, 5.5mΩ @ 4.5V, higher Q_g (42nC); SO-8FL package with larger thermal pad (R_θJA = 45°C/W).	Better for 24V industrial rails; requires more gate drive energy and larger PCB area (5.0×6.0mm vs. 2.0×2.0mm).	Choose when higher voltage margin and lower R_DS(ON) justify increased size and cost in non-space-constrained designs.

Compared with DMN2011LFG-7, DMN2011UFDE-13 offers 47% lower thermal resistance and 60% smaller footprint; versus NTMFS4C06NT1G, it trades 5V headroom and 39% higher R_DS(ON) for 64% area reduction and superior integration in miniaturized battery-powered systems.

Availability

DMN2011UFDE-13 is available at Aetrix Electronics and suitable for USB Power Delivery implementations, automotive body electronics, portable medical sensors, and industrial IoT edge nodes requiring stable component supply, AEC-Q101 compliance, and high-density packaging.

Supply support for DMN2011UFDE-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.

This part belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability, low-R_DS(ON) switching in 12V/24V vehicle subsystems and compact portable electronics.

FAQ

What is the maximum allowable gate-source voltage for DMN2011UFDE-13?

The absolute maximum V_GS is ±12V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, keep V_GS within 0–4.5V during normal switching, as R_DS(ON) is fully specified at 4.5V and the device achieves full enhancement well below 10V.

Does DMN2011UFDE-13 require a gate resistor in typical applications?

Yes-a gate resistor (typically 1–10Ω) is recommended to dampen ringing caused by parasitic inductance and control dV/dt during switching. The device's 1.5–3Ω intrinsic gate resistance is insufficient alone; external resistance also limits peak gate current from drivers and prevents overshoot that could exceed ±12V V_GS rating.

Can DMN2011UFDE-13 be used in linear (analog) regulation mode?

No-it is not characterized or guaranteed for linear-mode operation. The Safe Operating Area (SOA) graph shows limited DC capability (≤0.61W without copper pad), and thermal runaway risk increases above V_DS ≈ 5V due to positive temperature coefficient of R_DS(ON). Use only in saturated switching or pulse-width modulated configurations.

How does the U-DFN2020-6 package affect PCB layout requirements?

The package requires a dedicated thermal pad (minimum 1.4mm × 1.4mm) connected to a solid internal ground plane via ≥4 thermal vias (0.3mm diameter, 0.8mm pitch). Solder mask defined pads are mandatory; solder paste stencil aperture should be 70–80% open to prevent voiding and ensure coplanarity during reflow.

DMN2011UFDE-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-PowerUDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 11.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 3372 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 610mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type E)

DMN2011UFDE-13 FAQ

1.How can I place an order for DMN2011UFDE-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2011UFDE-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2011UFDE-13 reliable?

The price and inventory of DMN2011UFDE-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2011UFDE-13 is usually 5 days.

3.What payment methods are accepted for DMN2011UFDE-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2011UFDE-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2011UFDE-13?

DMN2011UFDE-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2011UFDE-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2011UFDE-13?

For technical support, including DMN2011UFDE-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2011UFDE-13 requirements.

6.How does Aetrix verify that DMN2011UFDE-13 is sourced from the original manufacturer or authorized distributors?

All DMN2011UFDE-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2011UFDE-13 meets industry standards.

7.What is the process for return or replacement of DMN2011UFDE-13?

All DMN2011UFDE-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2011UFDE-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2011UFDE-13 part is unused and in its original packaging.

Return procedure for DMN2011UFDE-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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