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Diodes Incorporated DMN2011UFDF-13
- Part No.:
- DMN2011UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2011UFDF-13.pdf
- Description:
- MOSFET N-CH 20V 14.2A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,120
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Product details
Overview
DMN2011UFDF-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 9.5mΩ RDS(ON) at VGS = 4.5V, 11.7A continuous drain current at TA = +25°C, and ESD-protected gate. It serves as a low-profile power switch in compact DC-DC converters and load management circuits.
For engineers reviewing the DMN2011UFDF-13 datasheet, DMN2011UFDF-13 pinout, DMN2011UFDF-13 application, or DMN2011UFDF-13 equivalent, key selection criteria include its 0.6mm profile, 4mm² PCB footprint, low 0.4–1.0V gate threshold, and thermal resistance of 61°C/W under enhanced layout conditions.
Technical Context
This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining fast switching with 24nC total gate charge at VGS = 4.5V and 56nC at 10V. Its body diode exhibits 0.7–1.2V forward voltage at 8.5A, supporting synchronous rectification and reverse recovery time of 12.8ns.
The device operates across –55°C to +150°C junction temperature range and supports pulsed drain currents up to 80A. Its U-DFN2020-6 (Type F) package uses NiPdAu-plated copper leadframe and meets J-STD-020 Level 1 moisture sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - maximum blocking voltage for 3.3V/5V logic-level systems |
| RDS(ON) | 9.5mΩ @ VGS = 4.5V - enables <1W conduction loss at 10A in compact layouts |
| ID (continuous) | 11.7A @ TA = +25°C - supports high-current load switching on FR-4 with 1"² copper |
| Qg | 24nC @ VGS = 4.5V - determines gate drive energy and switching speed in PWM control |
| RθJA | 61°C/W - requires minimal copper area for thermal management in space-constrained designs |
| VGS(th) | 0.4–1.0V - ensures turn-on with standard 1.8V/2.5V/3.3V microcontroller GPIO |
| Ciss | 2248pF - impacts high-frequency gate drive impedance and EMI behavior |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, no leads, RoHS-compliant NiPdAu plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; ESD-protected; 1.5Ω gate resistance limits ringing |
| 2 (S) | Source | Reference node for gate drive; connected to internal thermal pad |
| 3 (D) | Drain | High-side or low-side power path; tied to exposed drain pad |
| 4 (S) | Source | Second source terminal for reduced bond-wire inductance and improved current sharing |
| 5 (D) | Drain | Second drain terminal; enhances thermal conduction via dual-drain layout |
| 6 (S) | Source | Third source terminal; stabilizes gate-source reference under high di/dt |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile packaging | 0.6mm height enables use in ultra-thin portable electronics and stacked PCB assemblies |
| Thermally optimized layout | Exposed drain and source pads reduce RθJA to 61°C/W with 1"² copper, improving power density |
| Logic-level gate drive | VGS(th) down to 0.4V allows direct interface with 1.8V I/O without level-shifting circuitry |
| ESD-protected gate | HBM rating >2kV per JEDEC JS-001 - eliminates need for external gate protection in most applications |
| Green compound | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets global environmental mandates |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Bidirectional overvoltage/overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side main switch controlling battery discharge path and enabling reverse-current blocking. Use Value: 9.5mΩ RDS(ON) minimizes voltage drop during 10A peak loads, preserving battery runtime and thermal margin. | Use Scenario: 5V/9V/15V/20V USB-C power path switching in portable chargers and docking stations. IC Role / Device Role / Timing Role: High-speed load switch enabling hot-plug detection and fault isolation between source and sink. Use Value: 24nC Qg and 12.8ns tRR support clean 100kHz+ switching with minimal shoot-through risk. |
| DC-DC Converter Synchronous Rectifier | Industrial Sensor Node Power Gate |
Use Scenario: Secondary-side rectification in 3.3V/5V buck converters for IoT edge devices. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency at light-to-moderate loads. Use Value: 0.7V VSD at 8.5A and low Coss (295pF) reduce conduction and switching losses versus discrete diodes. | Use Scenario: Controlled power gating of BLE/Wi-Fi modules in battery-powered industrial sensors. IC Role / Device Role / Timing Role: Low-quiescent-load enable switch isolating subsystems during deep sleep modes. Use Value: 1μA IDSS and 0.4V VGS(th) ensure reliable turn-off and zero standby leakage across –40°C to +85°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011LFG-7 | Same die, U-DFN2020-6 (Type G) package with different marking and reel size | Identical electrical specs; differs only in packaging logistics and date-code format | Select when sourcing from 7-inch reels or requiring Type G mechanical variant |
| AO3414 | 12V VDSS, 12mΩ RDS(ON) @ 4.5V, 5.7A ID, SOT-23 package | Lower voltage rating and current capability; larger RθJA (180°C/W) limits power handling | Choose only for cost-sensitive, low-power (<2W) applications where 20V headroom is unnecessary |
Compared with DMN2011UFDF-13, DMN2011LFG-7 offers identical performance in alternate packaging, while AO3414 trades voltage headroom, current capacity, and thermal performance for lower unit cost and legacy SOT-23 compatibility.
Availability
DMN2011UFDF-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, DC-DC synchronous rectifiers, and industrial sensor node power gates requiring stable component supply and long-term manufacturability.
Supply support for DMN2011UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This part belongs to Diodes' logic-level power MOSFET product line, engineered for high-efficiency, space-constrained power management in portable, automotive, and industrial systems where low RDS(ON), fast switching, and robust gate protection are critical.
FAQ
What is the maximum safe operating temperature for DMN2011UFDF-13?
The junction temperature must not exceed +150°C under any condition. Derating begins at +70°C ambient: continuous drain current drops from 11.7A at +25°C to 9.3A at +70°C on standard FR-4, and thermal resistance rises to 175°C/W without copper enhancement.
Does DMN2011UFDF-13 require an external gate resistor?
A gate resistor is recommended for EMI control and oscillation suppression. The datasheet specifies Rg = 1.8Ω for timing measurements; typical values range from 1Ω to 10Ω depending on switching frequency and drive strength, with 4.7Ω being common for 500kHz–1MHz DC-DC applications.
Can DMN2011UFDF-13 be used in high-side switching configurations?
Yes - it supports high-side operation when paired with appropriate gate drive circuitry capable of providing VGS ≥ 4.5V relative to the source. Its 12V VGSS rating and low VGS(th) allow bootstrap or charge-pump solutions for 12–20V rail applications.
Is the U-DFN2020-6 (Type F) package compatible with standard reflow profiles?
Yes - it is rated for J-STD-020 Level 1 moisture sensitivity and qualified for standard Pb-free reflow profiles (peak 260°C, 20–40s above 217°C). The NiPdAu finish ensures solderability per MIL-STD-202, Method 208, and the 0.6mm profile avoids tombstoning on fine-pitch layouts.
DMN2011UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2248 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN2011UFDF-13 FAQ
1.How can I place an order for DMN2011UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2011UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2011UFDF-13 reliable?
The price and inventory of DMN2011UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2011UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMN2011UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2011UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2011UFDF-13?
DMN2011UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2011UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2011UFDF-13?
For technical support, including DMN2011UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2011UFDF-13 requirements.
6.How does Aetrix verify that DMN2011UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMN2011UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2011UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMN2011UFDF-13?
All DMN2011UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2011UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2011UFDF-13 part is unused and in its original packaging.
Return procedure for DMN2011UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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