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Diodes Incorporated DMN2011UFX-7
- Part No.:
- DMN2011UFX-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 4-VFDFN Exposed Pad
- Datasheet:
-
DMN2011UFX-7.pdf
- Description:
- MOSFET 2N-CH 20V 12.2A 4VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,604
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Product details
Overview
DMN2011UFX-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in V-DFN2050-4 package, rated for 20V V(BR)DSS, 9.5mΩ RDS(ON) @ 4.5V VGS, and 12.2A continuous drain current at +25°C. It integrates two independent gate-protected channels optimized for high-efficiency power switching in compact DC-DC converters and load switches.
For engineers reviewing the DMN2011UFX-7 datasheet, DMN2011UFX-7 pinout, DMN2011UFX-7 application, or DMN2011UFX-7 equivalent, key selection criteria include low RDS(ON) at 2.5V–4.5V gate drive, fast switching (tD(on) = 3.6ns), ESD protection, AEC-Q101 qualification, and thermal resistance of 59.1°C/W.
Technical Context
This dual MOSFET implements two fully isolated N-channel silicon structures sharing a common source-connected substrate layout in a thermally enhanced V-DFN2050-4 package. Each channel supports independent gate control with integrated gate protection diodes and exhibits matched threshold voltage (0.3–1.0V) and dynamic capacitance (Ciss = 2248pF).
It operates within –55°C to +150°C junction temperature range and delivers 17mJ repetitive avalanche energy (IAS = 18A, L = 0.1mH). Its low input leakage (<±10µA) and body diode forward voltage (1.2V @ 1A) support reliable operation in bidirectional power path and reverse polarity protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20V - Maximum drain-source blocking voltage before avalanche conduction begins. |
| RDS(ON) max | 9.5mΩ @ VGS = 4.5V - Enables <100mW conduction loss at 10A, critical for high-efficiency 3.3V/5V rail switching. |
| ID max (TA = +25°C) | 12.2A - Continuous current rating per channel under standard FR-4 PCB conditions with 1-inch² copper pad. |
| Ciss | 2248pF - Low input capacitance reduces gate drive power and enables fast turn-on with minimal overshoot. |
| tD(on) | 3.6ns - Short turn-on delay supports >100MHz switching in synchronous buck controllers and Class-D drivers. |
| Qg (VGS = 4.5V) | 24nC - Optimized gate charge allows full enhancement using low-current microcontroller GPIOs without external drivers. |
| RθJA | 59.1°C/W - Thermal resistance enables 2.1W power dissipation on standard 2oz FR-4 board without heatsink. |
Pinout & Package
Package: V-DFN2050-4 - 2.0mm × 5.0mm exposed-pad surface-mount package with NiPdAu-plated terminals, UL 94V-0 molding compound, and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (S1) | Source 1 | Low-side return node for Channel 1; electrically isolated from S2 but shares thermal pad. |
| Pin 2 (G1) | Gate 1 | Control terminal for Channel 1; includes integrated gate protection diode to VDD and GND. |
| Pin 3 (S2) | Source 2 | Low-side return node for Channel 2; independent routing required to avoid cross-conduction. |
| Pin 4 (G2) | Gate 2 | Control terminal for Channel 2; independently driven with same protection architecture as G1. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables space-efficient dual-load switching or half-bridge configuration without external isolation components. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM ≥2kV). |
| Low RDS(ON) at 2.5V VGS | 13mΩ ensures usable conduction in battery-powered systems where gate drive voltage drops below 3.3V. |
| ESD protected gates | Integrated protection diodes eliminate need for external TVS on gate traces in noisy industrial environments. |
| Green, halogen-free construction | Meets JEDEC J-STD-020 MSL Level 1 and EU RoHS 2011/65/EU with <900ppm Br+Cl and <1000ppm Sb. |
Applications
| USB Power Delivery Switching | Automotive Body Control Module |
|---|---|
Use Scenario: Dual-path USB-C port supporting simultaneous host/device role negotiation and VBUS switching. IC Role / Device Role / Timing Role: Dual N-MOSFET load switch controlling VBUS and CC line power paths with independent enable timing. Use Value: 9.5mΩ RDS(ON) limits voltage drop to <100mV at 10A, preserving PD 3.0 compliance; fast 3.6ns tD(on) enables precise sequencing during role swap. |
Use Scenario: LED lighting and solenoid driver outputs in door module with overtemperature and short-circuit protection. IC Role / Device Role / Timing Role: High-side load switch for 12V cabin lighting and low-side driver for window motor control logic. Use Value: AEC-Q101 qualification ensures operation across –40°C to +125°C ambient; 17mJ avalanche energy withstands inductive kickback from solenoids. |
| Portable Medical Sensor Hub | Industrial PLC I/O Expansion |
Use Scenario: Battery-isolated analog sensor front-end with programmable gain and supply rail switching. IC Role / Device Role / Timing Role: Dual-channel power gate managing isolated 3.3V and 5V sensor rails with independent enable/disable control. Use Value: 10.4A ID at 2.5V VGS supports direct MCU GPIO drive; <1µA IDSS prevents battery drain during sleep mode. |
Use Scenario: Digital output module driving 24V DC actuators with short-circuit and thermal foldback protection. IC Role / Device Role / Timing Role: Low-side switch for 24V loads with integrated body diode handling inductive flyback. Use Value: 1.2V VSD at 1A enables efficient freewheeling; 59.1°C/W RθJA allows sustained 2A operation on standard PCB without forced air. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011LSD-13 | Same die, SO-8 package (larger footprint, higher RθJA = 62°C/W), no integrated gate protection diodes. | Suitable for through-hole prototyping or legacy board reuse; lacks ESD robustness in high-noise factory floors. | Select when manual soldering or thermal margin >5°C/W is acceptable and gate drive noise immunity is secondary. |
| FDMA1023NZ | 20V dual N-MOSFET in 2×2mm DFN, RDS(ON) = 12.5mΩ @ 4.5V, Qg = 18nC, not AEC-Q101 qualified. | Better gate charge efficiency but lower current density; unsuitable for automotive under-hood use. | Prefer for cost-sensitive consumer IoT hubs where AEC-Q101 is not mandated and 12.2A rating is noncritical. |
Compared with DMN2011UFX-7, DMN2011LSD-13 trades compactness and ESD protection for easier hand-soldering, while FDMA1023NZ offers lower gate drive burden but sacrifices automotive reliability and peak current capability.
Availability
DMN2011UFX-7 is available at Aetrix Electronics and suitable for USB-C PD implementations, automotive body electronics, portable medical sensor hubs, and industrial PLC I/O modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN2011UFX-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with design centers in Asia, Europe, and the US, and manufacturing in Taiwan and China.
The DMN2011UFX-7 belongs to Diodes' high-density power MOSFET product line targeting space-constrained, high-reliability power management in automotive, industrial, and portable electronics.
FAQ
Is DMN2011UFX-7 suitable for hot-swap applications?
Yes - its 20V V(BR)DSS, 12.2A ID rating, and 17mJ avalanche energy allow safe operation during live insertion into 12V/24V backplanes. The integrated gate protection diodes prevent ESD-induced latch-up during connector mating, and the 1.2V body diode forward voltage minimizes voltage droop during transient overload events.
What is the maximum recommended PCB copper area for thermal performance?
Per datasheet Note 6, optimal thermal performance requires a 1-inch² (645mm²) copper pad on the bottom layer connected to the exposed thermal pad via ≥4 thermal vias (0.3mm diameter, filled). This achieves the rated 59.1°C/W RθJA; reducing copper area increases junction temperature by ~15°C per 50% reduction in pad size.
Does DMN2011UFX-7 support 1.8V logic-level gate drive?
No - minimum guaranteed turn-on occurs at VGS(th) = 0.3V, but RDS(ON) rises sharply below 2.5V: 13mΩ @ 2.5V, undefined below 2.0V. For 1.8V systems, external level-shifting or gate boosting is required to ensure <20mΩ conduction and avoid thermal runaway at >5A loads.
How does the dual-channel structure affect cross-talk during switching?
Electrical isolation between channels is maintained via separate source/gate terminals and physical separation on-die; measured Crss = 265pF confirms minimal capacitive coupling. Layout best practice requires ≥0.5mm clearance between G1/G2 traces and independent ground returns to suppress <50ps timing skew observed in high-speed test setups.
DMN2011UFX-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 4-VFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 12.2A (Ta)
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2248pF @ 10V
- Power - Max:
- 2.1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN2050-4
DMN2011UFX-7 FAQ
1.How can I place an order for DMN2011UFX-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2011UFX-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2011UFX-7 reliable?
The price and inventory of DMN2011UFX-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2011UFX-7 is usually 5 days.
3.What payment methods are accepted for DMN2011UFX-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2011UFX-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2011UFX-7?
DMN2011UFX-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2011UFX-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2011UFX-7?
For technical support, including DMN2011UFX-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2011UFX-7 requirements.
6.How does Aetrix verify that DMN2011UFX-7 is sourced from the original manufacturer or authorized distributors?
All DMN2011UFX-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2011UFX-7 meets industry standards.
7.What is the process for return or replacement of DMN2011UFX-7?
All DMN2011UFX-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2011UFX-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2011UFX-7 part is unused and in its original packaging.
Return procedure for DMN2011UFX-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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