My Inquiry
My Account
Diodes Incorporated DMN2011UTS-13
- Part No.:
- DMN2011UTS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
DMN2011UTS-13.pdf
- Description:
- MOSFET N-CH 20V 21A 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:145
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN2011UTS-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in TSSOP-8 package, rated for 20V VDSS, 11 mΩ RDS(ON) @ VGS = 4.5V, and 21A continuous drain current at TC = +25°C. It delivers low gate threshold (0.4–1.0V), ESD-protected gate, and AEC-Q101 qualification-optimized for high-efficiency DC-DC converters and battery management systems.
For engineers reviewing the DMN2011UTS-13 datasheet, DMN2011UTS-13 pinout, DMN2011UTS-13 application, or DMN2011UTS-13 equivalent, key selection criteria include its 1.5Ω gate resistance, 24 nC total gate charge at 4.5V, 144°C/W RθJA on FR-4, 70A pulsed drain rating, and thermal stability across –55°C to +150°C junction range.
Technical Context
This MOSFET employs planar trench-gate technology to achieve ultra-low RDS(ON) while maintaining fast switching performance: tD(ON) = 3.6 ns, tF = 13.5 ns, and QGD/QG ratio of ~21% ensures robust dv/dt immunity in synchronous buck stages. Its low VGS(TH) enables direct drive from 1.8V/2.5V logic controllers.
The integrated body diode exhibits 0.7–1.2V forward voltage at 8.5A with 12.8 ns reverse recovery time and 6.9 nC QRR, supporting efficient synchronous rectification and freewheeling in compact power stages without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for 12V rail and USB PD input stage applications |
| RDS(ON) | 11 mΩ @ VGS = 4.5V - Enables <1.2W conduction loss at 10A in 25°C ambient PCB layout |
| ID (continuous) | 21 A @ TC = +25°C - Supports high-current POL converters with minimal heatsinking |
| QG | 24 nC @ VGS = 4.5V - Matches low-voltage PWM controllers (e.g., TI TPS543x) without gate driver amplification |
| RθJA | 144 °C/W - Validated on 2oz FR-4 with minimum pad layout; requires thermal relief design for >3W dissipation |
| VGS(TH) | 0.4–1.0 V - Ensures full enhancement under 1.8V I/O logic, eliminating level-shifter need in portable systems |
| ESD Rating | HBM ±2 kV - Integrated gate protection reduces external TVS dependency in space-constrained battery packs |
Pinout & Package
Package: TSSOP-8, surface-mount, green molding compound (UL 94V-0), matte tin-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; low 1.5Ω gate resistance minimizes Miller plateau duration during switching |
| 2 (S) | Source | Reference node for gate drive; tied to power ground in high-side switch configurations |
| 3 (S) | Source | Second source connection; paralleled with Pin 2 to reduce source inductance in high-di/dt applications |
| 4 (S) | Source | Third source connection; enhances current sharing and thermal spreading across package leads |
| 5 (D) | Drain | Main power output node; connected to internal die drain metallization; supports 70A pulsed current |
| 6 (D) | Drain | Second drain connection; lowers RDS(ON) contribution from bond wire resistance |
| 7 (D) | Drain | Third drain connection; improves thermal coupling from die to PCB copper pour |
| 8 (D) | Drain | Fourth drain connection; enables symmetric current distribution in multi-phase converter legs |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V drive | 13 mΩ - Enables operation with 2.5V microcontroller GPIOs in always-on battery monitoring circuits |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST - suitable for ADAS power rails |
| Integrated ESD protection | ±2 kV HBM - eliminates discrete gate Zener in cost-sensitive IoT endpoint designs |
| Green, halogen-free construction | <900 ppm Br/Cl, <1000 ppm Sb - meets IPC-1752a reporting requirements for RoHS-compliant BOMs |
| Optimized dynamic parameters | CRSS/CISS = 11.8% - reduces risk of false turn-on in high-side configurations with fast dv/dt |
Applications
| Battery Protection Circuit | USB-C Power Delivery Input Stage |
|---|---|
|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion packs with integrated fuel gauging. IC Role / Device Role: Low-side protection switch controlling battery discharge path and enabling safe charging termination. Use Value: 11 mΩ RDS(ON) limits voltage drop to <110 mV at 10A, preserving state-of-charge accuracy and minimizing thermal rise in sealed enclosures. |
Use Scenario: Input power switch for 20V/3A USB-C PD sink applications requiring hot-plug robustness. IC Role / Device Role: High-side main power switch managing VBUS connection before controller handshaking completes. Use Value: 0.4–1.0V VGS(TH) allows immediate turn-on from 3.3V supervisor IC, reducing VBUS ramp delay to <50 μs. |
| Point-of-Load Converter High-Side Switch | Automotive Body Control Module Load Driver |
|
Use Scenario: 5V-to-1.2V synchronous buck converter supplying FPGA core voltage in industrial edge compute modules. IC Role / Device Role: High-efficiency high-side power switch operating at 500 kHz with 4.5V gate drive from integrated controller. Use Value: 24 nC QG and 2.6 ns tR enable <1.5% switching loss at 500 kHz, sustaining >92% efficiency at 8A load. |
Use Scenario: 12V load switching for LED lighting and window motor control in BCMs meeting ISO 16750-2 pulse test requirements. IC Role / Device Role: AEC-Q101-qualified power switch replacing mechanical relays to reduce size and acoustic noise. Use Value: 18A avalanche current rating and 17 mJ EAS withstand inductive kickback from 50W lamp loads without snubber circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011LSD-13 | Same die, SO-8 package; RθJA = 62°C/W (vs. 144°C/W); higher thermal mass but larger footprint | Better suited for high-power, low-frequency switching where board space permits larger package | Select when thermal budget exceeds 3W and PCB real estate allows SO-8; avoid in space-constrained USB-C modules |
| SI2301DS-T1-GE3 | 20V, 115 mΩ @ 2.5V, 3.3A ID; no AEC-Q101; lower gate charge (6.5 nC) but 10× higher RDS(ON) | Targeted at low-current logic-level switching (e.g., LED dimming), not power conversion | Choose only for sub-1A loads where gate drive simplicity outweighs conduction loss; not a functional substitute in DC-DC stages |
Compared with DMN2011UTS-13, DMN2011LSD-13 offers superior thermal performance in non-space-constrained designs, while SI2301DS-T1-GE3 trades off conduction efficiency for ultra-low gate drive demand-neither matches the original's combination of 21A current handling, 11 mΩ RDS(ON), and AEC-Q101 compliance in TSSOP-8.
Availability
DMN2011UTS-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery input stages, and automotive body control modules requiring stable component supply and long-term lifecycle support.
Supply support for DMN2011UTS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
The DMN2011UTS belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, low-voltage power switching in portable, automotive, and industrial applications demanding AEC-Q101 reliability and green material compliance.
FAQ
What is the maximum continuous drain current for DMN2011UTS-13 at 70°C case temperature?
The datasheet specifies 17A continuous drain current at TC = +70°C with VGS = 4.5V. This derating reflects thermal limitations of the TSSOP-8 package under sustained power dissipation; PCB layout with 1-inch² copper pour is required to achieve this rating.
Does DMN2011UTS-13 require an external gate resistor for typical 500 kHz DC-DC operation?
No external gate resistor is required for stability at 500 kHz when driven by standard PWM controllers (e.g., MP2315, TPS54302). The device's 1.5Ω intrinsic gate resistance and 24 nC QG allow clean switching with ≤10Ω external series resistance-only added if overshoot or ringing is observed on gate waveform.
Can DMN2011UTS-13 be used in a high-side configuration with 12V supply and 3.3V logic control?
Yes-its 0.4–1.0V VGS(TH) ensures full enhancement with 3.3V gate drive, but a level-shifting circuit or dedicated high-side driver is needed to bias the gate above the source potential. Direct 3.3V drive only works in low-side or floating-source configurations.
Is the body diode in DMN2011UTS-13 suitable for synchronous rectification in a 200 kHz buck converter?
Yes-the body diode has 12.8 ns tRR and 6.9 nC QRR, enabling efficient synchronous operation up to 1 MHz. At 200 kHz, its 0.7–1.2V VSD forward drop adds <120 mW conduction loss at 10A, making it viable when paired with precise dead-time control.
DMN2011UTS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2248 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
DMN2011UTS-13 FAQ
1.How can I place an order for DMN2011UTS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2011UTS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2011UTS-13 reliable?
The price and inventory of DMN2011UTS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2011UTS-13 is usually 5 days.
3.What payment methods are accepted for DMN2011UTS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2011UTS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2011UTS-13?
DMN2011UTS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2011UTS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2011UTS-13?
For technical support, including DMN2011UTS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2011UTS-13 requirements.
6.How does Aetrix verify that DMN2011UTS-13 is sourced from the original manufacturer or authorized distributors?
All DMN2011UTS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2011UTS-13 meets industry standards.
7.What is the process for return or replacement of DMN2011UTS-13?
All DMN2011UTS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2011UTS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2011UTS-13 part is unused and in its original packaging.
Return procedure for DMN2011UTS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2011UTS-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
