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Diodes Incorporated DMN2013UFDE-7
- Part No.:
- DMN2013UFDE-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMN2013UFDE-7.pdf
- Description:
- MOSFET N-CH 20V 10.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,317
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Product details
Overview
DMN2013UFDE-7 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, rated for 10.5A continuous drain current at VGS = 4.5V, with RDS(ON) as low as 8.4mΩ (typ), 11mΩ (max), and ESD-protected gate. It serves as a high-efficiency power switch in compact DC-DC converters and load switching circuits.
For engineers reviewing the DMN2013UFDE-7 datasheet, DMN2013UFDE-7 pinout, DMN2013UFDE-7 application, or DMN2013UFDE-7 equivalent, key selection criteria include low-threshold gate drive compatibility (VGS(TH) = 0.5–1.1V), ultra-low profile (0.6mm height), 4mm² PCB footprint, and thermal performance under pulsed and steady-state conditions.
Technical Context
This MOSFET employs a trench-gate process optimized for simultaneous low RDS(ON) and fast switching: total gate charge is 14.3nC at VGS = 4.5V, with tD(ON) = 9.9ns and tF = 20.8ns under standard test conditions (VDS = 10V, ID = 8.5A, RG = 1.8Ω). Its body diode exhibits VSD = 1.2V at IS = 8.5A.
Thermal design is supported by two distinct RθJA ratings: 189°C/W (standard FR-4 layout) and 61°C/W (enhanced 2oz copper + thermal pad), enabling flexible board-level thermal management. Junction temperature range spans –55°C to +150°C, validated per J-STD-020 Level 1 moisture sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum blocking voltage before avalanche; suitable for 12V rail switching and USB PD input stages. |
| RDS(ON) | 8.4mΩ (typ) @ VGS = 4.5V - Enables <100mW conduction loss at 10A, critical for high-current portable power paths. |
| ID (cont) | 10.5A @ TA = +25°C, VGS = 4.5V - Sustains full-rated load without derating on minimal copper area. |
| VGS(TH) | 0.5–1.1V - Compatible with 1.8V/2.5V logic outputs and low-voltage microcontrollers without level shifting. |
| Qg | 14.3nC @ VGS = 4.5V - Reduces gate driver power demand and enables efficient operation up to 1MHz switching. |
| RθJA | 61°C/W (enhanced layout) - Allows ~2W dissipation with ≤100°C junction rise above ambient, supporting high-duty-cycle loads. |
| Package | U-DFN2020-6 (Type E) - 2.0×2.0mm footprint, 0.6mm height, NiPdAu-plated terminals, RoHS/Green compliant. |
Pinout & Package
U-DFN2020-6 (Type E) is a bottom-exposed thermal pad, 6-terminal leadless package with 0.65mm pitch. The exposed pad (Pin 6) must be soldered to PCB thermal plane for optimal thermal performance. Pin 1 is marked by a laser-etched dot adjacent to corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; low-threshold (0.5–1.1V) enables direct MCU drive; ESD-protected (HBM >2kV). |
| 2 | Source (S) | Reference node for gate control; tied to power ground or return path; forms body diode anode. |
| 3 | Drain (D) | Main current path output; connected to switched load or power rail; electrically tied to exposed thermal pad. |
| 4 | Source (S) | Second source connection; paralleled internally with Pin 2 to reduce source inductance and improve switching stability. |
| 5 | Drain (D) | Second drain connection; paralleled internally with Pin 3 to lower RDS(ON) and enhance current sharing. |
| 6 | Thermal Pad (EP) | Exposed copper pad; must be soldered to solid copper pour for thermal conduction; not electrically isolated. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.6mm) | Enables integration into space-constrained modules such as USB-C power adapters and wearable battery packs. |
| 4mm² PCB footprint | Reduces board area by >50% vs. SO-8 or TSOP-6 equivalents, easing layout in multi-rail PMIC subsystems. |
| Low gate threshold (0.5–1.1V) | Eliminates need for gate drivers in 1.8V/2.5V I/O systems, simplifying control circuitry and reducing BOM count. |
| ESD-protected gate | HBM rating >2kV ensures robustness during automated assembly and field handling without external protection. |
| Lead-free & Green compliance | Meets RoHS 3, halogen-free (<900ppm Br/Cl, <1000ppm Sb), UL 94V-0, and J-STD-020 Level 1 standards. |
Applications
| USB Power Delivery Switching | Portable Device Load Switch |
|---|---|
|
Use Scenario: Bidirectional 20V/5A power path control in USB-C DRP (dual-role port) implementations. IC Role / Device Role / Timing Role: Main N-channel high-side switch enabling reverse/forward power flow with minimal forward voltage drop. Use Value: RDS(ON) ≤11mΩ limits conduction loss to <550mW at 5A, preserving efficiency across full PD 3.0 voltage range. |
Use Scenario: Controlled power-up sequencing for display backlight, camera module, or sensor sub-systems in smartphones. IC Role / Device Role / Timing Role: Low-threshold load switch activated directly by AP GPIO without level shifter. Use Value: VGS(TH) down to 0.5V ensures reliable turn-on with 1.8V I/O, while 0.6mm height avoids interference with stacked components. |
| DC-DC Converter Synchronous Rectifier | Industrial Sensor Node Power Gating |
|
Use Scenario: Secondary-side synchronous rectification in 12V-input buck converters powering FPGA or SoC core rails. IC Role / Device Role / Timing Role: Fast-switching N-channel rectifier replacing Schottky diode to reduce losses and heat generation. Use Value: Qg = 14.3nC and tF = 20.8ns support clean turn-off at 500kHz–1MHz, minimizing shoot-through risk and improving light-load efficiency. |
Use Scenario: Periodic wake-up power gating for ultra-low-power environmental sensors in battery-operated IIoT nodes. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤1µA) main power switch isolating sensor supply between measurement cycles. Use Value: RDS(ON) = 11mΩ at 2.5V gate drive ensures <300mW loss at 5A peak, while –55°C to +150°C rating supports outdoor deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2013LFG-7 | Same die, but in U-DFN2020-6 (Type G); slightly higher RDS(ON) (12mΩ max @ 4.5V) due to different leadframe plating. | Identical thermal and electrical specs; Type G variant has marginally higher RθJC (10.5°C/W vs. 9.3°C/W). | Select when legacy board designs use Type G footprint or require alternate tape-and-reel packaging (10k/reel only). |
| AO3414 | 20V N-ch, RDS(ON) = 12mΩ @ 4.5V, Qg = 12nC, but no ESD protection; 0.95mm height; SO-23 package. | Larger footprint (2.9×1.3mm), taller profile, and no integrated ESD guard ring increases system-level protection overhead. | Choose only if SO-23 is mandated by existing layout or if gate drive voltage exceeds 2.5V and ESD risk is mitigated externally. |
Compared with DMN2013UFDE-7, DMN2013LFG-7 offers identical functionality with minor thermal trade-offs, while AO3414 sacrifices ESD robustness and compactness for broader distributor availability-making DMN2013UFDE-7 optimal for new space- and reliability-critical designs.
Availability
DMN2013UFDE-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, portable device load switching, DC-DC converter synchronous rectification, and industrial sensor node power gating requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN2013UFDE-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-voltage power switching in consumer, computing, and industrial applications where size, thermal performance, and gate-drive simplicity are critical.
FAQ
Is DMN2013UFDE-7 qualified for automotive applications?
No-DMN2013UFDE-7 is a standard-qualification part. For automotive use, Diodes offers the pin- and footprint-compatible DMN2013UFDEQ, which is AEC-Q101 qualified, PPAP-capable, and manufactured in IATF 16949-certified facilities. The standard version lacks automotive change control and stress testing documentation.
What is the recommended PCB pad layout for thermal performance?
Use the official Diodes-recommended U-DFN2020-6 (Type E) pad layout: 0.40mm wide × 1.05mm long solder mask openings for pins 1–5, and a 1.50×1.50mm thermal pad with 6–8 thermal vias (0.3mm diameter, spaced ≤1mm apart) connecting to inner-layer ground planes. This achieves the 61°C/W RθJA rating.
Can DMN2013UFDE-7 operate reliably with 1.5V gate drive?
Yes-RDS(ON) is specified at 50mΩ max @ VGS = 1.5V and ID = 0.5A, confirming functional operation. However, conduction loss rises significantly: at 5A, expected RDS(ON) ≈35mΩ yields ~875mW loss. Use only for low-current, low-duty-cycle gating-not continuous high-current switching.
Does the exposed thermal pad require electrical connection?
Yes-the exposed pad (Pin 6) is electrically connected to the drain (D) terminal. It must be soldered to a PCB copper area tied to the drain net-not left floating or grounded. Failure to connect it thermally and electrically degrades both RDS(ON) stability and power handling capability, and risks thermal runaway under sustained load.
DMN2013UFDE-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25.8 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2453 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 660mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMN2013UFDE-7 FAQ
1.How can I place an order for DMN2013UFDE-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2013UFDE-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2013UFDE-7 reliable?
The price and inventory of DMN2013UFDE-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2013UFDE-7 is usually 5 days.
3.What payment methods are accepted for DMN2013UFDE-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2013UFDE-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2013UFDE-7?
DMN2013UFDE-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2013UFDE-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2013UFDE-7?
For technical support, including DMN2013UFDE-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2013UFDE-7 requirements.
6.How does Aetrix verify that DMN2013UFDE-7 is sourced from the original manufacturer or authorized distributors?
All DMN2013UFDE-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2013UFDE-7 meets industry standards.
7.What is the process for return or replacement of DMN2013UFDE-7?
All DMN2013UFDE-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2013UFDE-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2013UFDE-7 part is unused and in its original packaging.
Return procedure for DMN2013UFDE-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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