Diodes Incorporated DMN2013UFDEQ-7

Overview

DMN2013UFDEQ-7 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, delivering 11 mΩ R_DS(ON) at V_GS = 4.5V, 10.5 A continuous drain current, and AEC-Q101 qualification for automotive power switching. It serves as a low-profile load switch in DC-DC converter synchronous rectification and battery protection circuits.

For engineers reviewing the DMN2013UFDEQ-7 datasheet, DMN2013UFDEQ-7 pinout, DMN2013UFDEQ-7 application, or DMN2013UFDEQ-7 equivalent, key selection criteria include gate threshold voltage (0.5–1.1 V), thermal resistance (61 °C/W under enhanced layout), body diode forward voltage (1.2 V), and ESD-protected gate architecture.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while preserving fast switching dynamics: total gate charge is 14.3 nC at V_GS = 4.5V, with turn-on delay of 9.9 ns and turn-off delay of 66.4 ns under standard test conditions (V_DS = 10V, I_D = 8.5A, R_G = 1.8 Ω). Its low 0.6 mm profile and 4 mm² footprint support ultra-thin portable and automotive PCB designs.

The device integrates an intrinsic body diode with 2.5 A continuous forward current rating and 1.2 V forward voltage at 8.5 A, enabling bidirectional conduction in reverse-polarity protection and OR-ing applications. Gate-source leakage remains ≤ ±2 µA up to ±8 V, ensuring stable biasing in low-power control logic interfaces.

Key Specifications

Pinout & Package

U-DFN2020-6 (Type E) is a 2.0 × 2.0 mm, 0.6 mm height, leadless surface-mount package with exposed thermal pad (pin 6) and six terminals arranged in dual-row configuration. Molded plastic case meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2013UFDEQ-7, DMN2013LFG-7 offers identical electrical behavior in a marginally thinner package, while DMN2019UFD-7 trades 73% higher conduction loss for 34% lower gate charge-making it optimal only in high-frequency, low-current scenarios where thermal headroom is ample.

Availability

DMN2013UFDEQ-7 is available at Aetrix Electronics and suitable for automotive infotainment systems, USB-C power delivery modules, and portable medical device battery management requiring stable component supply, AEC-Q101 traceability, and RoHS-compliant sourcing.

Supply support for DMN2013UFDEQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Automotive-Qualified PowerFET family, engineered specifically for high-reliability, low-R_DS(ON) switching in 12 V and 24 V automotive subsystems and portable power architectures.

FAQ

What is the maximum continuous drain current for DMN2013UFDEQ-7 at 70°C ambient?

The maximum continuous drain current is 8.5 A at T_A = +70°C with V_GS = 4.5 V under steady-state conditions on a standard FR-4 board with minimum recommended pad layout. This derating reflects thermal limits imposed by the 61 °C/W junction-to-ambient resistance under enhanced thermal layout.

Does DMN2013UFDEQ-7 require external gate resistors in typical switching applications?

Yes-a series gate resistor of 1.8 Ω is specified in the datasheet for dynamic characterization and is recommended to dampen ringing caused by parasitic inductance in high-speed switching. Omission may cause overshoot exceeding ±8 V gate rating or oscillatory turn-on behavior in layouts with long gate traces.

Is the thermal pad (Pin 6) electrically isolated or connected to a specific terminal?

The thermal pad (Pin 6) is electrically connected to the drain terminal and must be soldered to a PCB copper pour tied to the drain net. It is not isolated and serves both thermal conduction and electrical connection functions-failure to connect it properly degrades R_θJA by >30% and risks thermal runaway under sustained load.

Can DMN2013UFDEQ-7 be used in linear (analog) regulation mode?

No-it is not characterized or rated for linear operation. The Safe Operating Area (SOA) curve shows limited DC capability (≤0.1 A at 10 V), and its R_DS(ON) variation with temperature (±30% over −55°C to +150°C) makes it unsuitable for precision analog pass elements. Use only in saturated switching mode.