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Diodes Incorporated DMN2013UFX-7
- Part No.:
- DMN2013UFX-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-VFDFN Exposed Pad
- Datasheet:
-
DMN2013UFX-7.pdf
- Description:
- MOSFET 2N-CH 20V 10A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,659
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Product details
Overview
DMN2013UFX from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a W-DFN5020-6 package, rated for 20 V V(BR)DSS, 11.5 mΩ RDS(ON) at 4.5 V VGS, and 10 A continuous drain current at 25°C. It delivers low conduction loss and fast switching for high-efficiency power management in compact DC-DC converters and load switches.
For engineers reviewing the DMN2013UFX datasheet, DMN2013UFX pinout, DMN2013UFX application, or DMN2013UFX equivalent, key selection criteria include its dual-channel layout, 2.5 V logic-level gate drive capability, AEC-Q101 qualification, and thermal performance under FR-4 PCB mounting conditions with defined pad layout.
Technical Context
This dual MOSFET integrates two independent N-channel silicon devices in a single 5.0 mm × 2.0 mm thermally enhanced DFN package. Each channel supports 20 V breakdown voltage, operates down to 1.1 V gate threshold (typical), and exhibits 2607 pF input capacitance and 32.4 nC total gate charge at 4.5 V drive - enabling efficient synchronous rectification and PWM-controlled power routing.
The device uses trench-gate process technology to achieve low RDS(ON) while maintaining controlled Crss (236 pF) and fast turn-on delay (8.6 ns). Its ESD protection, 150°C maximum junction temperature, and J-STD-020 Level 1 moisture sensitivity support robust operation in automotive and industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 12 V rail applications. |
| RDS(ON) max | 11.5 mΩ @ 4.5 V VGS - Conduction loss of ≤92 mW at 8.5 A; enables >95% efficiency in 5–12 V point-of-load stages. |
| ID max (25°C) | 10 A per channel - Continuous current rating with derating above 70°C; supports dual 5 A loads or parallel 10 A switching. |
| Ciss | 2607 pF - Input capacitance determines gate drive strength requirement; compatible with standard 1.8 Ω source/sink drivers. |
| Qg (4.5 V) | 32.4 nC - Total gate charge governs switching energy; enables <100 ns full-cycle transitions at 1 MHz with low driver loss. |
| TJ max | +150°C - Maximum junction temperature allows operation in under-hood or sealed industrial enclosures without forced cooling. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per stress test plan. |
Pinout & Package
Package: W-DFN5020-6 - 5.0 mm × 2.0 mm × 0.8 mm molded plastic body with exposed thermal pad; UL 94V-0 rated, halogen/antimony-free "Green" compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source 1 | Low-side return path for Channel 1; electrically tied to exposed thermal pad for enhanced heat dissipation. |
| G1 | Gate 1 | Control terminal for Channel 1; requires ≥1.1 V to initiate conduction; logic-level compatible with 2.5 V microcontrollers. |
| D1/D2 | Drain 1 / Drain 2 (common) | Shared drain node connecting both channels; enables half-bridge high-side switch configuration or dual low-side switching. |
| S2 | Source 2 | Independent return path for Channel 2; allows separate current sensing or isolated load control per channel. |
| G2 | Gate 2 | Independent control input for Channel 2; supports asynchronous or complementary drive schemes. |
| EP | Exposed Pad | Thermal and electrical connection to S1/S2; must be soldered to PCB copper pour for RθJA = 59°C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5 V VGS | 14 mΩ - Enables direct drive from 2.5 V GPIOs without level-shifting, reducing BOM count in battery-powered systems. |
| Fast switching speed | 8.6 ns tD(on), 13.7 ns tf - Minimizes transition losses in high-frequency (>500 kHz) DC-DC topologies such as buck converters. |
| ESD protection | HBM ±2 kV - Integrated protection eliminates need for external TVS diodes in board-level ESD-prone interfaces like USB power switches. |
| Thermally optimized package | RθJA = 59°C/W (with 1-inch² 2 oz Cu thermal pad) - Supports 2.14 W power dissipation without heatsink in space-constrained modules. |
| AEC-Q101 qualification | Automotive-grade reliability - Validated for 1000-hour HTOL, -55°C to +150°C temperature cycling, and mechanical shock per AEC standard. |
Applications
| Automotive Body Control Module | Industrial PLC Output Stage |
|---|---|
|
Use Scenario: Driving 12 V solenoids, relays, and LED arrays in door modules and lighting controllers. IC Role / Device Role / Timing Role: Dual-channel low-side switch providing independent PWM-controlled current paths with integrated thermal shutdown margin. Use Value: 11.5 mΩ RDS(ON) limits I²R heating to <1 W per channel at 9 A, eliminating discrete heatsinks in sealed enclosures. |
Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller digital output cards. IC Role / Device Role / Timing Role: Dual N-channel switch handling up to 10 A per channel with fast turn-off (<57 ns total) to prevent contact bounce artifacts. Use Value: 32.4 nC Qg enables clean 100 kHz switching with minimal gate driver power, supporting deterministic scan cycle timing in real-time control loops. |
| USB-C Power Delivery Load Switch | Portable Medical Device Power Path |
|
Use Scenario: In-line power path control between USB-C port and system rails, supporting 5–20 V input with overcurrent protection. IC Role / Device Role / Timing Role: Dual-channel configurable switch allowing redundant or split-rail power routing with independent enable control. Use Value: 2.5 V logic compatibility enables direct interface with USB PD controller GPIOs, reducing component count and PCB area by 30% vs. discrete FET solutions. |
Use Scenario: Battery-to-load power gating in handheld diagnostic tools requiring ultra-low leakage and medical-grade reliability. IC Role / Device Role / Timing Role: Dual-channel isolation switch ensuring zero standby current (<1 μA IDSS) during sleep mode and rapid wake-up response. Use Value: 1 μA max IDSS at 16 V VDS extends battery life beyond 12 months in intermittent-use devices; AEC-Q101 qualification satisfies IEC 60601-1 risk management requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016UFX-7 | Higher RDS(ON): 16 mΩ @ 4.5 V; same W-DFN5020-6 package and pinout. | Lower efficiency in high-current paths; suitable where cost reduction outweighs conduction loss. | Select when thermal budget allows higher on-resistance and BOM cost is prioritized over peak efficiency. |
| SI6926ADQ-T1-GE3 | Dual N-channel in SO-8; RDS(ON) = 15 mΩ @ 4.5 V; no AEC-Q101 qualification. | Larger footprint (5×6 mm vs. 5×2 mm); lacks automotive reliability validation. | Choose only for non-automotive industrial use where PCB area is unconstrained and qualification is not required. |
Compared with DMN2013UFX, DMN2016UFX offers lower cost but sacrifices 39% higher conduction loss at 8.5 A, while SI6926ADQ trades compactness and automotive compliance for legacy SO-8 compatibility and broader distributor availability.
Availability
DMN2013UFX is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, USB-C power delivery subsystems, and portable medical devices requiring stable component supply across multi-year production cycles.
Supply support for DMN2013UFX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMN2013UFX belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for high-reliability, low-RDS(ON) switching in 12 V and 24 V vehicle subsystems and industrial controls.
FAQ
What is the maximum continuous drain current per channel at 100°C ambient?
At TA = +100°C, the DMN2013UFX supports 5.5 A continuous drain current per channel when mounted on an FR-4 PCB with minimum recommended pad layout (Note 5). This derating follows the 163°C/W RθJA value and ensures TJ remains below 150°C under steady-state conditions.
Can DMN2013UFX be used in a synchronous buck converter high-side configuration?
No - DMN2013UFX is a dual N-channel MOSFET with common drain and separate sources; it lacks an integrated bootstrap diode or level-shifting circuitry required for high-side N-FET drive. It is intended for low-side switching or dual low-side configurations only.
Is the exposed thermal pad electrically isolated or connected internally?
The exposed pad (EP) is electrically connected to Source 1 and Source 2 terminals internally. It must be soldered to a PCB ground or source-plane copper pour to ensure both thermal performance (RθJA = 59°C/W) and electrical integrity per the recommended layout in AP02001.
Does DMN2013UFX support 1.8 V logic-level gate drive?
No - the typical VGS(th) is 0.8 V with a maximum of 1.1 V, but RDS(ON) rises sharply below 2.5 V VGS. At 1.8 V, RDS(ON) exceeds 25 mΩ (extrapolated from Figure 4), resulting in excessive conduction loss; 2.5 V is the minimum recommended gate drive for functional operation.
DMN2013UFX-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-VFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Rds On (Max) @ Id, Vgs:
- 11.5mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2607pF @ 10V
- Power - Max:
- 2.14W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- W-DFN5020-6
DMN2013UFX-7 FAQ
1.How can I place an order for DMN2013UFX-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2013UFX-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2013UFX-7 reliable?
The price and inventory of DMN2013UFX-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2013UFX-7 is usually 5 days.
3.What payment methods are accepted for DMN2013UFX-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2013UFX-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2013UFX-7?
DMN2013UFX-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2013UFX-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2013UFX-7?
For technical support, including DMN2013UFX-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2013UFX-7 requirements.
6.How does Aetrix verify that DMN2013UFX-7 is sourced from the original manufacturer or authorized distributors?
All DMN2013UFX-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2013UFX-7 meets industry standards.
7.What is the process for return or replacement of DMN2013UFX-7?
All DMN2013UFX-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2013UFX-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2013UFX-7 part is unused and in its original packaging.
Return procedure for DMN2013UFX-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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