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Diodes Incorporated DMN2014LHAB-13
- Part No.:
- DMN2014LHAB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
DMN2014LHAB-13.pdf
- Description:
- MOSFET 2N-CH 20V 9A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:10,000
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Product details
Overview
DMN2014LHAB-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2030-6 (Type B) package, rated for 20V VDSS, 13mΩ RDS(ON) @ 4.5V VGS, and 9.0A continuous drain current at +25°C. It integrates ESD-protected gates and low-threshold voltage (0.3–1.1V) to enable efficient load switching in compact battery-powered systems.
For engineers reviewing the DMN2014LHAB-13 datasheet, DMN2014LHAB-13 pinout, DMN2014LHAB-13 application, or DMN2014LHAB-13 equivalent, key selection criteria include its 1.8V turn-on capability, 1550pF Ciss, 16nC total gate charge at 4.5V, AEC-Q101 qualification, and thermal resistance of 73.7°C/W under optimized PCB layout.
Technical Context
This dual MOSFET features two independently controlled N-channel channels sharing a common source configuration per channel, with gate protection diodes integrated per FET. Its low RDS(ON) across VGS = 1.8–4.5V enables stable conduction even under weak-bias microcontroller I/O drive.
The device uses trench-gate process technology to achieve high transconductance (|Yfs| = 25S typ) and fast switching (tD(ON) = 6.9ns, tF = 12ns), while maintaining low input capacitance and robust 2kV HBM ESD rating on all gate terminals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum drain-source blocking voltage before avalanche onset; supports 12V rail and USB PD 3.0 auxiliary power paths. |
| RDS(ON) | 13mΩ @ 4.5V VGS - Enables ≤117mW conduction loss at 9A, critical for thermally constrained portable PCBs. |
| ID (cont) | 9.0A @ +25°C - Sustained current capability with 1.7W power dissipation on 1-inch² copper pad. |
| VGS(TH) | 0.3–1.1V - Ensures reliable turn-on from 1.8V logic families and ultra-low-power MCU GPIOs. |
| Ciss | 1550pF - Low input capacitance reduces gate drive energy and speeds up switching transitions. |
| Qg | 16nC @ 4.5V - Defines minimum gate driver current requirement for <50ns transition times. |
| RθJA | 73.7°C/W - Thermal performance achievable with recommended 1-inch² copper pad; enables 1.1W operation at +70°C ambient. |
Pinout & Package
Package: U-DFN2030-6 (Type B), 2.0mm × 3.0mm × 0.6mm, exposed thermal pad, RoHS-compliant green molding compound (UL 94V-0).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Control terminal for first N-MOSFET; ESD-protected, threshold 0.3–1.1V. |
| 2 (S1) | Source of Channel 1 | Return path for Channel 1; internally connected to thermal pad for enhanced heat transfer. |
| 3 (D1) | Drain of Channel 1 | High-side or low-side power path node; rated for 20V, 9A continuous. |
| 4 (D2) | Drain of Channel 2 | Independent power path node; electrically isolated from D1, same 20V/9A rating. |
| 5 (S2) | Source of Channel 2 | Return path for Channel 2; separate from S1, enabling dual independent switches. |
| 6 (G2) | Gate of Channel 2 | Independent control terminal; identical electrical specs to G1, no cross-talk. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 1.8V VGS | 28mΩ - Enables functional switching from single-cell Li-ion (2.5–4.2V) without level-shifting. |
| ESD-protected gate | 2kV HBM - Eliminates need for external gate protection in handheld and wearable designs. |
| AEC-Q101 qualified | Automotive-grade reliability - Validated for temperature cycling (-55°C to +150°C) and humidity exposure. |
| Low Qgd/Qgs ratio | 2.5nC / 2.3nC - Reduces Miller-induced shoot-through risk in synchronous buck or half-bridge topologies. |
| Halogen & antimony free | <900ppm Br, <900ppm Cl, <1000ppm Sb - Meets IPC-1752A Class 2 material declaration requirements. |
Applications
| Battery Protection Circuit | USB Type-C Port Power Switch |
|---|---|
Use Scenario: Dual-MOSFET back-to-back configuration isolates battery from system during overvoltage or short-circuit events. IC Role / Device Role / Timing Role: Acts as bidirectional blocking switch; each channel handles one direction of current flow with independent gate control. Use Value: 20V rating covers full Li-ion voltage range; 13mΩ RDS(ON) limits protection losses to <1W at 9A fault current. |
Use Scenario: Controls VBUS connection between USB-C receptacle and host power rail during plug insertion/removal. IC Role / Device Role / Timing Role: Functions as hot-swap load switch; fast 12ns fall time prevents voltage glitches during state transitions. Use Value: 1.8V gate threshold ensures compatibility with USB-C controller GPIOs; 2kV ESD withstand protects against connector mating transients. |
| Smartphone Power Path Management | Wireless Earbud Charging Case |
Use Scenario: Routes power from wall adapter or battery to system rails while preventing reverse current flow. IC Role / Device Role / Timing Role: Implements OR-ing function with independent channel control for charger/battery priority arbitration. Use Value: Dual-channel integration saves board space vs. discrete solutions; 0.6mm profile fits sub-1mm Z-height assemblies. |
Use Scenario: Enables independent charging control of left/right earbud batteries from shared case battery. IC Role / Device Role / Timing Role: Serves as dual independent load switches; each channel manages one earbud's charging path. Use Value: 9.0A rating supports fast-charging protocols; low 0.012g weight minimizes impact on portable device mass budget. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2014LHAB-7 | Same die, 3,000-piece tape-and-reel packaging vs. 10,000-piece for -13 variant. | No functional difference; suited for prototyping or low-volume production runs. | Select -7 for evaluation or pilot builds; -13 preferred for volume manufacturing due to lower unit cost and logistics efficiency. |
| DMN2015LHAB-13 | Higher RDS(ON) (15mΩ @ 4.5V), same 20V rating and U-DFN2030-6 package. | Slightly higher conduction loss (135mW vs. 117mW at 9A); otherwise pin- and footprint-compatible. | Use only if DMN2014LHAB-13 is unavailable; verify thermal margin in high-duty-cycle applications. |
Compared with DMN2014LHAB-7, the -13 variant offers better cost-per-unit and supply continuity for production; versus DMN2015LHAB-13, it delivers 15% lower RDS(ON) and tighter VGS(TH) distribution, directly improving efficiency in battery-constrained devices.
Availability
DMN2014LHAB-13 is available at Aetrix Electronics and suitable for battery pack protection, USB-C port power switching, and smartphone power path management requiring stable component supply and AEC-Q101 reliability assurance.
Supply support for DMN2014LHAB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN2014LHAB belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained power management in portable and automotive electronics where low RDS(ON), fast switching, and gate-drive flexibility are critical.
FAQ
What is the maximum junction temperature and thermal derating behavior of DMN2014LHAB-13?
The absolute maximum junction temperature is +150°C. Derating begins at +70°C ambient: continuous drain current drops from 9.0A at +25°C to 7.1A at +70°C under steady-state conditions on a 1-inch² copper pad. Transient thermal resistance data (Figure 11) shows RθJA improves to 68°C/W for pulses under 10ms, supporting short-duration surge handling.
Can DMN2014LHAB-13 be used in a back-to-back configuration for reverse polarity protection?
Yes - its dual N-channel structure and symmetric 20V VDSS rating make it suitable for bidirectional blocking. When configured back-to-back with sources tied together, it blocks current in both directions. Gate drive must ensure both FETs are fully enhanced simultaneously; typical implementation uses a single gate resistor and 4.5V+ drive to guarantee sub-13mΩ conduction in both directions.
Does DMN2014LHAB-13 require external gate resistors for EMI control in high-speed switching?
Not inherently - its 1.37Ω intrinsic gate resistance and 16nC gate charge support clean 10–50MHz switching with minimal ringing. However, a 5–10Ω series gate resistor is recommended when driving from weak GPIOs (<4mA sink/source) to dampen oscillation and reduce EMI emissions in dense PCB layouts near RF sections or audio circuits.
How does the U-DFN2030-6 (Type B) package affect PCB layout and thermal performance?
The U-DFN2030-6 (Type B) requires strict adherence to the recommended 1.35mm × 1.80mm thermal pad with 0.22mm solder mask opening and four 0.35mm thermal vias. Deviation reduces RθJA from 73.7°C/W to >150°C/W. The absence of leads eliminates parasitic inductance but demands precise stencil aperture control to prevent solder bridging between pins 2/3 and 4/5.
DMN2014LHAB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta)
- Rds On (Max) @ Id, Vgs:
- 13mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1550pF @ 10V
- Power - Max:
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2030-6 (Type B)
DMN2014LHAB-13 FAQ
1.How can I place an order for DMN2014LHAB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2014LHAB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2014LHAB-13 reliable?
The price and inventory of DMN2014LHAB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2014LHAB-13 is usually 5 days.
3.What payment methods are accepted for DMN2014LHAB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2014LHAB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2014LHAB-13?
DMN2014LHAB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2014LHAB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2014LHAB-13?
For technical support, including DMN2014LHAB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2014LHAB-13 requirements.
6.How does Aetrix verify that DMN2014LHAB-13 is sourced from the original manufacturer or authorized distributors?
All DMN2014LHAB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2014LHAB-13 meets industry standards.
7.What is the process for return or replacement of DMN2014LHAB-13?
All DMN2014LHAB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2014LHAB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2014LHAB-13 part is unused and in its original packaging.
Return procedure for DMN2014LHAB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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