Diodes Incorporated DMN2014LHAB-7

Overview

DMN2014LHAB-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2030-6 (Type B) package, rated for 20V V_DSS, 13mΩ R_DS(ON) @ 4.5V V_GS, and 9.0A I_D at +25°C - designed for high-efficiency load switching in compact battery-powered systems.

For engineers reviewing the DMN2014LHAB-7 datasheet, DMN2014LHAB-7 pinout, DMN2014LHAB-7 application, or DMN2014LHAB-7 equivalent, key selection criteria include low gate threshold voltage (0.3–1.1V), ESD-protected gate (2kV HBM), fast switching times (t_D(ON) = 6.9ns), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This dual MOSFET integrates two independent N-channel devices with matched characteristics on a single die, sharing no internal connection between channels - enabling isolated high-side or low-side switching in space-constrained DC-DC and battery protection circuits. Each channel supports logic-level drive down to 1.8V V_GS, with R_DS(ON) rising predictably from 13mΩ at 4.5V to 28mΩ at 1.8V.

Thermal performance is optimized for FR-4 PCBs: R_θJA is 73.7°C/W with a 1-inch² copper pad, enabling 1.7W continuous power dissipation at +25°C ambient. The device features integrated gate protection diodes and is qualified per AEC-Q101 for operation from −55°C to +150°C junction temperature.

Key Specifications

Pinout & Package

Package: U-DFN2030-6 (Type B), 2.0mm × 3.0mm × 0.6mm, thermally enhanced with exposed thermal pad (Pin 6). Molded green compound, UL 94V-0 rated, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN2014LHAB-7, DMN2014LHDB-7 offers identical performance in a functionally identical package, while AOB2014L trades AEC-Q101 compliance and lower R_DS(ON) for higher cost-per-area and reduced thermal efficiency in automotive use cases.

Availability

DMN2014LHAB-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for DMN2014LHAB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This part belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, low-voltage power switching in portable, automotive, and industrial systems where small size and low gate drive voltage are critical.

FAQ

What is the thermal pad connection requirement for DMN2014LHAB-7?

Pin 6 is the exposed thermal pad and must be soldered to a solid copper pour on the PCB for optimal thermal performance. The datasheet specifies a minimum 1-inch² copper area for 1.7W power dissipation. Thermal vias (≥4×0.3mm diameter) should connect the pad to inner-layer ground planes to reduce R_θJA from 73.7°C/W to ≤50°C/W in production layouts.

Can DMN2014LHAB-7 be used in a high-side switch configuration?

Yes - each channel operates as an independent N-channel MOSFET and can be used in high-side configuration when paired with a gate driver that provides V_GS ≥ 4.5V above the source potential. The device's ±12V V_GS rating and 20V V_DSS support bootstrap or charge-pump-based high-side drive up to 12V rail voltages.

Is the DMN2014LHAB-7 pinout compatible with standard U-DFN2030-6 footprints?

Yes - it uses the industry-standard U-DFN2030-6 (Type B) outline with 0.5mm pitch and defined pin 1 marking (24W). The recommended pad layout matches JEDEC MO-252, and the mechanical drawing confirms compatibility with automated placement and reflow processes using standard stencil apertures and 0.15mm thickness.

Does DMN2014LHAB-7 include intrinsic body diodes, and what are their forward voltage characteristics?

Yes - each channel includes an integrated body diode with typical V_SD = 0.75V at 1A and 25°C. These diodes conduct during reverse-current conditions (e.g., in synchronous rectification or back-EMF clamping) and are rated for continuous 1A forward current. Their low V_F reduces conduction loss in bidirectional power paths such as battery charging/discharging circuits.