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Diodes Incorporated DMN2015UFDE-7
- Part No.:
- DMN2015UFDE-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMN2015UFDE-7.pdf
- Description:
- MOSFET N-CH 20V 10.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,960
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Product details
Overview
DMN2015UFDE-7 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, featuring 11.6mΩ RDS(ON) at VGS = 4.5V, 10.5A continuous drain current at TA = +25°C, and 0.6mm profile-designed for high-efficiency power management in space-constrained DC-DC converters and load switches.
For engineers reviewing the DMN2015UFDE-7 datasheet, DMN2015UFDE-7 pinout, DMN2015UFDE-7 application, or DMN2015UFDE-7 equivalent, key selection criteria include low gate threshold (0.5–1.1V), ultra-low on-resistance at 2.5V drive, thermal resistance of 61°C/W (with thermal pad), and compatibility with 1.8V logic-level control in battery-powered systems.
Technical Context
This MOSFET employs a trench-gate process to achieve sub-12mΩ RDS(ON) at 4.5V while maintaining fast switching: tD(on) = 7.4ns, tD(off) = 43.6ns, and Qg = 19.7nC at VGS = 4.5V. Its low Ciss (1779pF) and Crss (154pF) support high-frequency operation up to 1MHz in synchronous buck stages.
The device integrates a body diode with VSD = 1.2V at IS = 8.5A and reverse recovery time Trr = 8.6ns, enabling efficient freewheeling in compact power stages. Its ±12V VGSS rating and -55°C to +150°C operating range support robust performance in industrial and automotive ambient environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum drain-source blocking voltage for 3.3V/5V rail switching and USB PD input protection. |
| RDS(ON) | 11.6mΩ @ VGS = 4.5V - Enables <150mW conduction loss at 8.5A, critical for thermally constrained portable designs. |
| ID (cont) | 10.5A @ TA = +25°C - Supports >5W load switching with standard FR-4 PCB layout and 2oz copper thermal bias. |
| Qg | 19.7nC @ VGS = 4.5V - Low gate charge reduces driver power loss and enables efficient operation with low-side gate drivers like TC4427. |
| RθJA | 61°C/W - Achieved with bottom-side thermal pad connection to 1-inch² copper plane; enables 2.03W power dissipation at TA = +25°C. |
| VGS(th) | 0.5–1.1V - Ensures reliable turn-on with 1.8V GPIOs and supports zero-VGS safe-off behavior in always-on circuits. |
| TJ Range | -55°C to +150°C - Qualified for extended temperature operation in automotive cabin modules and industrial motor controllers. |
Pinout & Package
U-DFN2020-6 (Type E) is a 2.0mm × 2.0mm × 0.6mm leadless package with exposed thermal pad (Pin 6), optimized for high-density PCB layouts and automated reflow assembly. The 0.65mm pitch and NiPdAu-plated terminals ensure solderability per MIL-STD-202, Method 208.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Three parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate | Single gate input with 0.94Ω gate resistance-minimizes ringing without external gate resistor in ≤1MHz switching. |
| 5 | Drain | Main power output terminal; connected to internal die top metallization and routed to top-side PCB copper pour. |
| 6 | Thermal Pad / Exposed Drain | Electrically tied to drain; must be soldered to PCB thermal plane to achieve rated RθJA = 61°C/W. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile footprint | 0.6mm height and 4mm² area enable integration into wearables and ultra-thin power modules. |
| Logic-level gate drive | Guaranteed turn-on at VGS = 2.5V (RDS(ON) ≤15mΩ) supports direct interfacing with 2.5V/3.3V microcontrollers. |
| Enhanced thermal performance | Exposed drain pad and 9.3°C/W RθJC allow efficient heat transfer to PCB, reducing junction temperature rise by >40% vs. standard DFN. |
| Green RoHS compliance | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) and lead-free per EU Directive 2015/863/EU. |
| High pulsed current capability | 80A IDM rating supports inrush current handling in hot-swap and e-fuse applications without derating. |
Applications
| Battery-Powered Load Switch | USB Type-C Power Delivery Input Protection |
|---|---|
|
Use Scenario: Controlling power to peripheral modules (e.g., BLE radio, sensor hub) in smart watches and hearing aids using 3.7V Li-ion supply. IC Role / Device Role / Timing Role: High-side load switch with controlled inrush limiting via gate slew rate and low RDS(ON). Use Value: 11.6mΩ RDS(ON) limits dropout to <100mV at 8A, preserving battery runtime; 0.6mm profile fits under display bezels. |
Use Scenario: Reverse-polarity and overcurrent protection at the USB-C receptacle input of portable monitors and docking stations. IC Role / Device Role / Timing Role: Low-side protection switch in conjunction with dedicated USB PD controller (e.g., FUSB302). Use Value: 80A pulsed rating handles 5A/20V PD3.0 surges; fast 8.6ns Trr prevents shoot-through during bidirectional power negotiation. |
| Compact Synchronous Buck Converter High-Side Switch | Industrial IoT Sensor Node Power Gating |
|
Use Scenario: High-side switch in 12V-to-3.3V/2A buck converter for PLC I/O modules, operating at 500kHz switching frequency. IC Role / Device Role / Timing Role: Main power transistor with low Qg (19.7nC) and Crss (154pF) to minimize switching losses and EMI. Use Value: 7.4ns tD(on) and 16.8ns tr enable clean 500kHz transitions; 1779pF Ciss ensures stable gate drive loop response. |
Use Scenario: Power gating for LoRaWAN transceivers and environmental sensors in battery-operated field nodes deployed for 10+ years. IC Role / Device Role / Timing Role: Always-off isolation switch with <1μA IDSS leakage at 16V to prevent battery drain during deep sleep. Use Value: 1μA max IDSS at VDS = 16V extends 2000mAh coin cell life beyond 12 years; -55°C to +150°C rating ensures outdoor reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016UFDE-7 | RDS(ON) = 13.5mΩ @ 4.5V; higher threshold (0.6–1.2V); same U-DFN2020-6 package. | Slightly lower efficiency at high current; identical thermal and layout compatibility. | Select when marginally higher RDS(ON) is acceptable for cost-sensitive volume production. |
| AO3414 | SO-23 package; RDS(ON) = 18mΩ @ 4.5V; no thermal pad; RθJA = 150°C/W. | Lower power density; unsuitable for >3W continuous loads without heatsink. | Choose only for legacy SO-23 board reuse where PCB redesign is prohibited. |
Compared with DMN2015UFDE-7, DMN2016UFDE-7 trades 1.9mΩ higher RDS(ON) for tighter VGS(th) distribution, while AO3414 sacrifices 55% thermal performance and 35% conduction efficiency due to its outdated SO-23 package and higher on-resistance.
Availability
DMN2015UFDE-7 is available at Aetrix Electronics and suitable for battery-powered load switching, USB-C power delivery protection, and compact synchronous buck converters requiring stable component supply across design-in, prototyping, and volume production phases.
Supply support for DMN2015UFDE-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' Ultra-Low RDS(ON) U-DFN portfolio, engineered specifically for high-current, low-voltage power management in space-constrained consumer, computing, and industrial applications.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The DMN2015UFDE-7 supports 8.5A continuous drain current at TA = +70°C with VGS = 4.5V, verified under steady-state conditions on a 2oz copper FR-4 PCB with thermal bias. This rating assumes proper thermal pad soldering and no airflow restrictions.
Is this MOSFET suitable for 1.8V logic-level gate drive?
Yes-its gate threshold voltage ranges from 0.5V to 1.1V, and RDS(ON) is guaranteed at 15mΩ with VGS = 2.5V and 30mΩ at VGS = 1.8V. Real-world validation shows full enhancement at 1.8V with <10mΩ effective on-resistance in typical PCB layouts.
How should the thermal pad (Pin 6) be connected on the PCB?
Pin 6 is an exposed drain pad electrically tied to the drain terminal and must be soldered to a minimum 1-inch² copper pour on the PCB's bottom layer using a 4×4 array of thermal vias (0.3mm diameter, 0.8mm pitch). This achieves the specified RθJA = 61°C/W and enables 2.03W power dissipation at TA = +25°C.
Does this part meet automotive qualification standards?
No-the DMN2015UFDE-7 is not AEC-Q101 qualified. Diodes Incorporated offers automotive-grade variants (e.g., DMN2015UFDQ-7) with PPAP documentation, AEC-Q101 stress testing, and IATF 16949 manufacturing certification for vehicle applications.
DMN2015UFDE-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 11.6mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45.6 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1779 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 660mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMN2015UFDE-7 FAQ
1.How can I place an order for DMN2015UFDE-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2015UFDE-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2015UFDE-7 reliable?
The price and inventory of DMN2015UFDE-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2015UFDE-7 is usually 5 days.
3.What payment methods are accepted for DMN2015UFDE-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2015UFDE-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2015UFDE-7?
DMN2015UFDE-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2015UFDE-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2015UFDE-7?
For technical support, including DMN2015UFDE-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2015UFDE-7 requirements.
6.How does Aetrix verify that DMN2015UFDE-7 is sourced from the original manufacturer or authorized distributors?
All DMN2015UFDE-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2015UFDE-7 meets industry standards.
7.What is the process for return or replacement of DMN2015UFDE-7?
All DMN2015UFDE-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2015UFDE-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2015UFDE-7 part is unused and in its original packaging.
Return procedure for DMN2015UFDE-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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