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Diodes Incorporated DMN2015UFDF-13
- Part No.:
- DMN2015UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2015UFDF-13.pdf
- Description:
- MOSFET N-CH 20V 15.2A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,083
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Product details
Overview
DMN2015UFDF-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 9 mΩ RDS(ON) at VGS = 4.5V, 15.2A continuous drain current at TA = +25°C, and 0.6 mm profile. It serves as a low-voltage power switch in compact DC-DC converters and load switching circuits.
For engineers reviewing the DMN2015UFDF-13 datasheet, DMN2015UFDF-13 pinout, DMN2015UFDF-13 application, or DMN2015UFDF-13 equivalent, key selection criteria include gate threshold voltage (0.4–1.2 V), thermal resistance (70 °C/W under enhanced layout), body diode forward voltage (0.75–1.2 V), and avalanche energy rating (28 mJ).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching performance: tD(ON) = 4.7 ns, tF = 7.4 ns, and Qg = 19.3 nC at VGS = 4.5V. Its low VGS(TH) enables direct drive from 1.8V/2.5V logic outputs without level shifting.
The device integrates a co-packaged body diode with 2.1 A continuous forward current capability and 11.6 ns reverse recovery time. Thermal design is supported by RθJC = 14 °C/W and validated junction-to-ambient performance of 70 °C/W on 2 oz copper FR-4 with thermal bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for 3.3V/5V rail switching applications |
| RDS(ON) | 9 mΩ @ VGS = 4.5V - Enables <100 mW conduction loss at 10 A in compact layouts |
| ID (max) | 15.2 A @ TA = +25°C - Supports high-current load switching in space-constrained PCBs |
| VGS(TH) | 0.4–1.2 V - Ensures reliable turn-on with 1.8V GPIO or low-voltage microcontroller outputs |
| Qg | 19.3 nC @ VGS = 4.5V - Minimizes gate drive power and enables efficient 1–2 MHz PWM operation |
| EAS | 28 mJ - Provides robustness against inductive switching transients in motor or solenoid drivers |
| RθJA | 70 °C/W (enhanced layout) - Allows 1.2 W dissipation at TA = +70°C with minimal copper area |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, 6-terminal leadless plastic package with NiPdAu-plated terminals and UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Main current path terminal; electrically connected to exposed thermal pad for heat transfer |
| 2 (G) | Gate | Control input; low capacitance (Ciss = 1439 pF) enables fast edge rates with minimal driver effort |
| 3 (S) | Source | Reference node for gate drive; tied to power ground plane in high-side or low-side configurations |
| 4 (S) | Source | Second source connection; reduces bond wire inductance and improves current sharing in parallel paths |
| 5 (D) | Drain | Secondary drain terminal; enhances current handling and thermal spreading across package bottom |
| 6 (D) | Drain | Third drain terminal; supports high-pulse-current capability (IDM = 70 A) in short-duration loads |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile footprint | 0.6 mm height - Fits beneath 0.8 mm connectors and in ultra-thin portable electronics |
| Thermal-enhanced layout | 70 °C/W RθJA on 2 oz copper - Delivers 1.2 W power handling without heatsink in 4 mm² area |
| Low gate charge | 19.3 nC total gate charge - Reduces driver losses and EMI in high-frequency synchronous buck stages |
| Robust body diode | 11.6 ns tRR, 4.6 nC QRR - Limits voltage overshoot and ringing during freewheeling in DC-DC topologies |
| Green compliance | Halogen- and antimony-free, RoHS 3 compliant - Meets IPC-1752A material declaration requirements |
Applications
| USB Power Delivery Switch | Portable SSD Power Gate |
|---|---|
|
Use Scenario: Selective 5V/20V power routing between USB-C port and internal storage controller. IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS path with fast enable/disable response. Use Value: 9 mΩ RDS(ON) limits voltage drop to <50 mV at 5 A, preserving PD negotiation margins. |
Use Scenario: Isolating NVMe SSD power domain during sleep/wake transitions in ultrabooks. IC Role / Device Role / Timing Role: High-efficiency power gate enabling rapid rail ramp-up and controlled discharge. Use Value: 0.4–1.2 V VGS(TH) ensures clean turn-on from 1.8V PMIC control signal without external bias. |
| Industrial Sensor Node Load Switch | Wireless Earbud Battery Protection |
|
Use Scenario: Enabling/disabling 3.3V sensor supply in battery-powered IIoT nodes with 10-year runtime targets. IC Role / Device Role / Timing Role: Ultra-low leakage (1 μA IDSS) power switch minimizing standby current. Use Value: 0.007 g mass and 4 mm² footprint reduce BOM weight and PCB area in multi-sensor modules. |
Use Scenario: Protecting Li-ion cell from over-discharge by disconnecting charging IC and audio codec during deep sleep. IC Role / Device Role / Timing Role: Bidirectional current-capable switch leveraging integrated body diode for reverse-path protection. Use Value: 2.1 A continuous body diode current supports safe inrush limiting and fault current clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016UFDF-13 | RDS(ON) = 11 mΩ @ VGS = 4.5V; higher VGS(TH) (0.5–1.4 V); same U-DFN2020-6 package | Slightly lower current rating (14.5 A) and reduced efficiency at 10 A due to +22% RDS(ON) | Preferred where tighter VGS(TH) distribution is required for margin-critical 1.8V logic interfaces |
| AO3414 | RDS(ON) = 12 mΩ @ VGS = 4.5V; larger SOT-23-3 package; no exposed thermal pad | Higher RθJA (200 °C/W) limits usable current to ≤4 A in same board area | Acceptable only when board space allows larger footprint and thermal performance is secondary |
Compared with DMN2015UFDF-13, DMN2016UFDF-13 trades marginal RDS(ON) increase for improved gate threshold consistency, while AO3414 sacrifices both thermal performance and conduction efficiency for legacy package compatibility.
Availability
DMN2015UFDF-13 is available at Aetrix Electronics and suitable for USB PD power routing, portable SSD power gating, and industrial sensor node load switching requiring stable component supply across long-lifecycle designs.
Supply support for DMN2015UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' U-DFN PowerMOS family, engineered specifically for high-density, low-voltage power management in portable and battery-powered systems where thermal and space constraints dominate.
FAQ
What is the maximum pulsed drain current rating for DMN2015UFDF-13?
The device supports 70 A pulsed drain current (IDM) under 380 µs pulse width and 1% duty cycle conditions. This rating assumes junction temperature remains within safe limits and is validated per JEDEC standards using the specified test waveform and thermal boundary conditions.
Does DMN2015UFDF-13 require a gate resistor for typical 1.8V MCU drive?
No external gate resistor is required when driven directly from a 1.8V GPIO with ≤20 mA sink/source capability. The device's low gate charge (19.3 nC) and 1.3 Ω intrinsic gate resistance allow full turn-on within 100 ns without oscillation or excessive ringing in properly laid-out PCBs.
Can DMN2015UFDF-13 be used in high-side switch configuration?
Yes - it is rated for VGS = ±12 V and supports high-side operation with appropriate gate drive circuitry. However, its 0.4–1.2 V VGS(TH) requires careful bootstrap or charge-pump design to ensure sufficient VGS above threshold when VDS approaches 20 V.
Is the U-DFN2020-6 (Type F) package compatible with standard reflow profiles?
Yes - the package meets J-STD-020 moisture sensitivity level 1 and is qualified for standard lead-free reflow profiles (peak temperature ≤260°C). Recommended solder paste volume and stencil aperture match Diodes' published pad layout for optimal thermal pad wetting and void minimization.
DMN2015UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42.3 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1439 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6
DMN2015UFDF-13 FAQ
1.How can I place an order for DMN2015UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2015UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2015UFDF-13 reliable?
The price and inventory of DMN2015UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2015UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMN2015UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2015UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2015UFDF-13?
DMN2015UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2015UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2015UFDF-13?
For technical support, including DMN2015UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2015UFDF-13 requirements.
6.How does Aetrix verify that DMN2015UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMN2015UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2015UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMN2015UFDF-13?
All DMN2015UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2015UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2015UFDF-13 part is unused and in its original packaging.
Return procedure for DMN2015UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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