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Diodes Incorporated DMN2015UFDF-7
- Part No.:
- DMN2015UFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2015UFDF-7.pdf
- Description:
- MOSFET N-CH 20V 15.2A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,790
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Product details
Overview
DMN2015UFDF from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 9 mΩ RDS(ON) at VGS = 4.5V, 15.2A continuous drain current at TA = +25°C, and low 0.6 mm profile. It serves as a high-efficiency power switch in compact DC-DC converters and load switching circuits.
For engineers reviewing the DMN2015UFDF datasheet, DMN2015UFDF pinout, DMN2015UFDF application, or DMN2015UFDF equivalent, key selection criteria include gate threshold voltage (0.4–1.2 V), thermal resistance (70 °C/W under enhanced layout), body diode forward voltage (0.75–1.2 V), and avalanche energy rating (28 mJ).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching performance: tD(ON) = 4.7 ns, tF = 7.4 ns, and Qg = 19.3 nC at VGS = 4.5V. Its 0.6 mm height and 4 mm² footprint support ultra-thin portable electronics.
The device operates across –55°C to +150°C junction temperature range, with VGSS = ±12 V and BVDSS = 20 V. It supports pulsed drain currents up to 70 A and exhibits normalized RDS(ON) variation <1.5× over full temperature range at VGS = 4.5V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for 3.3 V/5 V rail-level power switches. |
| RDS(ON) | 9 mΩ @ VGS = 4.5V - Enables ≤100 mW conduction loss at 10 A, critical for thermally constrained PCBs. |
| ID (continuous) | 15.2 A @ TA = +25°C - Sustains high-current loads in USB PD and PMIC output stages with minimal derating. |
| VGS(TH) | 0.4–1.2 V - Ensures reliable turn-on with 1.8 V logic and low-voltage microcontrollers. |
| Qg | 19.3 nC @ VGS = 4.5V - Supports efficient 1–2 MHz switching in synchronous buck converters. |
| EAS | 28 mJ - Provides robustness against inductive switching transients in motor drive and solenoid control. |
| RθJA | 70 °C/W (enhanced layout) - Allows 1.2 W dissipation at TA = +70°C without heatsink. |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, RoHS-compliant NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Main current path to load; connected to internal die backside and thermal pad for heat transfer. |
| 2 (G) | Gate | Control input; low 1.3 Ω gate resistance enables fast edge rates with minimal driver effort. |
| 3 (S) | Source | Reference node for gate drive and current sensing; tied to PCB ground plane via thermal pad. |
| 4 (S) | Source | Second source terminal for reduced bond wire inductance and improved current sharing. |
| 5 (D) | Drain | Secondary drain connection to enhance current handling and thermal spreading. |
| 6 (D) | Drain | Third drain terminal supporting high-pulse-current operation and low-inductance layout. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile packaging | 0.6 mm height enables use in space-constrained wearables and thin mobile accessories. |
| Ultra-low RDS(ON) | 6.8 mΩ typical at VGS = 4.5V reduces I²R losses by >30% vs. legacy 20V MOSFETs. |
| Low gate threshold | VGS(TH) down to 0.4 V ensures compatibility with 1.2 V core logic and battery-powered systems. |
| Enhanced thermal performance | 70 °C/W RθJA with 2 oz copper bias allows 1.2 W continuous operation on standard FR-4. |
| Green construction | Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) meets IPC-1752A Class 2. |
Applications
| USB Type-C Power Delivery Switch | Portable SSD Power Rail Control |
|---|---|
|
Use Scenario: Bidirectional 20 V/3 A power path switching between host and peripheral in USB-C cables. IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS enable/disable with fast 7.4 ns fall time. Use Value: 9 mΩ RDS(ON) limits voltage drop to <30 mV at 3 A, preserving PD negotiation accuracy. |
Use Scenario: Hot-swap control of 12 V auxiliary rail powering NVMe controller and flash memory in external SSD enclosures. IC Role / Device Role / Timing Role: High-current power switch with integrated body diode for reverse-current blocking. Use Value: 28 mJ avalanche energy rating withstands inductive kickback during sudden disconnect events. |
| Wireless Charging Transmitter Output | Smartphone Camera Flash Driver |
|
Use Scenario: Synchronous rectification and power gating in 15 W Qi-compliant transmitter modules. IC Role / Device Role / Timing Role: High-frequency switching element operating at 125–205 kHz with low Qgd/Qgs ratio. Use Value: 4.5 nC gate-drain charge minimizes Miller-induced shoot-through risk in half-bridge topology. |
Use Scenario: High-brightness LED flash current regulation in dual-camera smartphone modules. IC Role / Device Role / Timing Role: PWM-controlled current sink with fast 4.7 ns turn-on delay for precise strobe timing. Use Value: 0.4–1.2 V VGS(TH) enables direct drive from baseband processor GPIO without level-shifting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 20V power switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016UFDF-7 | RDS(ON) = 11 mΩ @ VGS = 4.5V; higher threshold (0.5–1.4 V); same U-DFN2020-6 package. | Slightly lower efficiency at high current; better noise immunity in noisy environments. | Select when marginally higher RDS(ON) is acceptable but tighter VGS(TH) distribution is required. |
| AO3414 | RDS(ON) = 11.5 mΩ @ VGS = 4.5V; SO-23 package (1.2 mm height); no specified avalanche rating. | Larger footprint (2.9 × 1.6 mm); unsuitable for ultra-thin designs; lacks EAS specification. | Choose only if board height >1.2 mm is available and transient robustness is not critical. |
Compared with DMN2015UFDF, DMN2016UFDF trades 22% higher RDS(ON) for improved VGS(TH) consistency, while AO3414 sacrifices 2.4× height and missing EAS spec for broader distributor availability.
Availability
DMN2015UFDF is available at Aetrix Electronics and suitable for USB-C power delivery systems, portable storage power management, wireless charging transmitters, and smartphone camera flash drivers requiring stable component supply and consistent parametric performance.
Supply support for DMN2015UFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and its own facilities.
This MOSFET belongs to Diodes' U-DFN PowerMOS family, engineered specifically for high-density, high-efficiency power switching in battery-powered and space-constrained consumer electronics.
FAQ
What is the maximum safe operating junction temperature for DMN2015UFDF?
The absolute maximum junction temperature is +150°C per the datasheet. Operation above this limit risks permanent degradation of the silicon die and interconnects. Thermal design must ensure TJ remains ≤150°C under worst-case ambient, power dissipation, and PCB layout conditions-verified using the 70 °C/W RθJA value with 2 oz copper thermal bias.
Can DMN2015UFDF be used in a high-side switching configuration?
No-it is an N-channel MOSFET with no integrated charge pump or bootstrap circuitry, making it unsuitable for direct high-side switching from a floating rail. It requires gate drive ≥VDS + VGS(TH), which is impractical without external level-shifting or gate-driver ICs. It is designed for low-side or synchronous rectifier roles.
Does DMN2015UFDF have a specified avalanche rating?
Yes-IAS = 23 A and EAS = 28 mJ are explicitly rated in the datasheet under Note 7, using L = 0.1 mH inductive load and single-pulse conditions. This confirms capability to absorb inductive energy during switching transitions, unlike many general-purpose MOSFETs lacking formal avalanche characterization.
Is the U-DFN2020-6 (Type F) package compatible with standard reflow profiles?
Yes-the device is qualified to JEDEC J-STD-020 moisture sensitivity level 1 and supports standard lead-free reflow profiles (peak 260°C, 10–30 sec above 217°C). The NiPdAu finish ensures solderability per MIL-STD-202, Method 208, and the 0.6 mm profile avoids tombstoning on fine-pitch layouts.
DMN2015UFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42.3 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1439 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6
DMN2015UFDF-7 FAQ
1.How can I place an order for DMN2015UFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2015UFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2015UFDF-7 reliable?
The price and inventory of DMN2015UFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2015UFDF-7 is usually 5 days.
3.What payment methods are accepted for DMN2015UFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2015UFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2015UFDF-7?
DMN2015UFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2015UFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2015UFDF-7?
For technical support, including DMN2015UFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2015UFDF-7 requirements.
6.How does Aetrix verify that DMN2015UFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMN2015UFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2015UFDF-7 meets industry standards.
7.What is the process for return or replacement of DMN2015UFDF-7?
All DMN2015UFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2015UFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2015UFDF-7 part is unused and in its original packaging.
Return procedure for DMN2015UFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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