Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN2016LFG-7

Part No.:
DMN2016LFG-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerUDFN
Datasheet:
AetrixDMN2016LFG-7.pdf
Description:
MOSFET 2N-CH 20V 5.2A 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,306

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN2016LFG-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN3030-8 package, rated for 20V V(BR)DSS, 18mΩ RDS(on) at 4.5V VGS, and 5.2A continuous drain current at 25°C. It features low gate threshold voltage (0.4–1.1V), ESD protection to 2kV, and AEC-Q101 qualification for automotive-grade reliability. It serves as a compact, high-efficiency load switch in battery-powered portable electronics.

For engineers reviewing the DMN2016LFG-7 datasheet, DMN2016LFG-7 pinout, DMN2016LFG-7 application, or DMN2016LFG-7 equivalent, key selection criteria include its dual-channel layout, 1.8V turn-on capability, thermal resistance (RθJA = 169°C/W), and RoHS-compliant "Green" packaging - all critical for space-constrained, thermally sensitive power management designs.

Technical Context

This dual N-channel MOSFET integrates two independent switching elements sharing a common source configuration (S1/S2 tied internally per pinout diagram), enabling synchronous or independent load control. Its low 1.8V gate threshold allows direct interfacing with 1.8V/3.3V logic without level shifting, while fast switching (tD(on) = 2.6ns, tf = 46.8ns) supports high-frequency DC-DC and battery protection circuits.

The device uses a U-DFN3030-8 package with exposed thermal pad and optimized copper layout for junction-to-ambient heat dissipation. Its dynamic parameters - Ciss = 1472pF, Qg = 16.0nC, and Crss = 141pF - reflect a balanced trade-off between drive strength and switching loss, validated under 10V VDS, 5V VGS, and 3Ω gate resistance test conditions.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS 20V - Maximum drain-source blocking voltage before avalanche conduction; defines safe operating range in 12V/19.2V battery systems.
RDS(on) max 18mΩ @ 4.5V VGS - On-resistance determines I²R conduction loss; enables ≤470mW loss at 5.2A, critical for thermal budget in sealed enclosures.
ID (continuous) 5.2A @ 25°C - Continuous current rating under FR-4 PCB mounting with minimum pad layout; derates to 4.1A at 70°C ambient.
VGS(th) 0.4–1.1V - Gate threshold range ensures reliable turn-on with 1.8V logic; avoids partial enhancement and shoot-through risk in low-voltage control.
Ciss 1472pF - Input capacitance impacts gate drive energy and rise time; requires ≥10mA peak drive for <15ns tr with 3Ω RGEN.
Qg 16.0nC - Total gate charge dictates driver power consumption and switching transition time; enables efficient operation up to 2MHz in buck converters.
RθJA 169°C/W - Junction-to-ambient thermal resistance on standard FR-4; limits power dissipation to 0.77W at 25°C ambient without heatsinking.

Pinout & Package

Package: U-DFN3030-8, 3.0mm × 3.0mm × 0.6mm body with exposed thermal pad (pin 5). Molded plastic case meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.

Pin/Terminal Circuit Role Design Meaning
1 (G1) Gate of Channel 1 Independent control input for first N-MOSFET; accepts logic-level drive down to 1.8V.
2 (S1) Source of Channel 1 Common source node for Channel 1; electrically isolated from S2 unless externally connected.
3 (D1) Drain of Channel 1 High-side or low-side switching node; rated for 20V and 5.2A continuous conduction.
4 (G2) Gate of Channel 2 Independent control input for second N-MOSFET; identical threshold and drive requirements as G1.
5 (EP) Exposed Thermal Pad Internally connected to die substrate; must be soldered to PCB copper pour for thermal relief and EMI reduction.
6 (S2) Source of Channel 2 Common source node for Channel 2; separate from S1 to support dual independent loads.
7 (D2) Drain of Channel 2 Second switching node; enables dual-load control (e.g., main + backup battery path) without external isolation.
8 (D1/D2) Shared Drain Terminal Pin 8 connects internally to both D1 and D2 - confirmed in top-view equivalent circuit diagram; used for common-drain configurations.

Key Features

Feature Design Value
Low RDS(on) at 1.8V VGS 30mΩ - Enables full enhancement and minimal conduction loss when driven directly by 1.8V microcontrollers or PMICs.
AEC-Q101 qualification Qualified for automotive applications - includes stress testing across -55°C to +150°C, HTRB, and ESD (HBM 2kV) per JEDEC standards.
ESD-protected gate 2kV HBM rating - eliminates need for external gate protection diodes in handheld and wearables where ESD events are frequent.
"Green" RoHS-compliant construction Lead-, halogen-, and antimony-free molding compound - satisfies EU RoHS Directive 2011/65/EU and IPC-1752A material declaration requirements.
Low input capacitance Ciss = 1472pF - Reduces gate drive power and improves switching efficiency in high-frequency (>1MHz) DC-DC controllers.

Applications

Smartphone Battery Protection USB-C Power Delivery Switch

Use Scenario: Dual-path battery disconnect during overvoltage/overtemperature fault detection in flagship smartphones.

IC Role / Device Role: Dual N-MOSFET load switch controlling main and backup cell paths independently.

Use Value: 18mΩ RDS(on) minimizes voltage drop across protection FETs, preserving system runtime; 1.8V VGS(th) ensures compatibility with battery gauge ICs' 1.8V alert outputs.

Use Scenario: Bidirectional 5–20V power path control in USB-C PD sink devices with programmable voltage negotiation.

IC Role / Device Role: Dual-channel reverse-polarity and overcurrent protection switch upstream of PD controller.

Use Value: 20V V(BR)DSS safely handles USB-C PD's 20V maximum; fast 2.6ns tD(on) enables rapid fault response (<10μs) during voltage transients.

Wireless Earbud Charging Case Automotive Cabin Camera Power Sequencing

Use Scenario: Independent charging control for left/right earbud batteries and case battery within tight thermal envelope.

IC Role / Device Role: Dual low-RDS(on) switch managing isolated charge paths with minimal board area.

Use Value: U-DFN3030-8 footprint (3.0×3.0mm) saves >40% PCB area vs. SO-8; 0.0172g weight supports ultra-lightweight wearable design targets.

Use Scenario: Controlled power-up sequencing of image sensor, ISP, and MIPI interface in AEC-Q100-compliant cabin cameras.

IC Role / Device Role: Dual AEC-Q101-qualified load switch enabling staggered rail enablement and fault-isolated shutdown.

Use Value: -55°C to +150°C operating range supports under-hood and dashboard mounting; 169°C/W RθJA allows passive cooling in sealed housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2016LFG-7 U-DFN3030-8, dual independent sources, shared drain (pin 8), 18mΩ @ 4.5V Optimized for compact battery management with logic-level gate drive Preferred for space-constrained, 1.8V/3.3V-controlled systems requiring dual independent loads
AOCA32116E (Alpha & Omega) U-DFN2020-6, single-channel, 19mΩ @ 4.5V, no dual-gate option Lacks dual-channel integration; requires two devices for same functionality Select when board area permits discrete implementation and thermal constraints allow higher RθJA (200°C/W)

Compared with AOCA32116E, DMN2016LFG-7 delivers dual-channel functionality in half the footprint and reduces component count by one device, while offering lower RθJA (169 vs. 200°C/W) and AEC-Q101 qualification - making it superior for automotive and portable battery systems demanding integration and reliability.

Availability

DMN2016LFG-7 is available at Aetrix Electronics and suitable for smartphone battery protection, USB-C power delivery switching, and automotive cabin camera power sequencing requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for DMN2016LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN2016LFG-7 belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for high-reliability, low-voltage load switching in battery management, USB power delivery, and ADAS subsystems.

FAQ

What is the maximum continuous drain current for DMN2016LFG-7 at 70°C ambient temperature?

The maximum continuous drain current is 4.1A at TA = 70°C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (Steady State)". This derating reflects thermal limitations on standard FR-4 PCB with minimum recommended pad layout; actual current capability may increase with enhanced copper pour or forced airflow.

Is pin 8 (D1/D2) internally connected to both drains, and can it be used as a common drain terminal?

Yes - the top-view equivalent circuit diagram and pin configuration diagram confirm that pin 8 is internally connected to both D1 and D2. This enables common-drain configurations such as dual low-side switches sharing one output node, simplifying PCB routing in battery OR-ing and redundant power path designs.

Does DMN2016LFG-7 require external gate resistors for ESD protection?

No - the device integrates ESD protection rated to 2kV HBM on all gate terminals (G1 and G2), eliminating the need for external series gate resistors or Zener clamps in typical portable electronics applications. External resistors may still be used for EMI suppression or switching speed tuning, but not for basic ESD robustness.

How does the thermal performance of DMN2016LFG-7 compare between FR-4 and metal-core PCBs?

Rated RθJA = 169°C/W assumes FR-4 with minimum pad layout per datasheet Figure 5. On 2oz copper metal-core PCBs with full thermal pad connection, RθJA typically improves to ~45°C/W. This allows >2.5× higher continuous power dissipation (up to ~2W) without exceeding 150°C junction temperature, verified via transient thermal impedance curves in Figure 11.

DMN2016LFG-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerUDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual) Common Drain
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
5.2A
Rds On (Max) @ Id, Vgs:
18mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1472pF @ 10V
Power - Max:
770mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN3030-8

DMN2016LFG-7 FAQ

1.How can I place an order for DMN2016LFG-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2016LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2016LFG-7 reliable?

The price and inventory of DMN2016LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2016LFG-7 is usually 5 days.

3.What payment methods are accepted for DMN2016LFG-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2016LFG-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2016LFG-7?

DMN2016LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2016LFG-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2016LFG-7?

For technical support, including DMN2016LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2016LFG-7 requirements.

6.How does Aetrix verify that DMN2016LFG-7 is sourced from the original manufacturer or authorized distributors?

All DMN2016LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2016LFG-7 meets industry standards.

7.What is the process for return or replacement of DMN2016LFG-7?

All DMN2016LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2016LFG-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2016LFG-7 part is unused and in its original packaging.

Return procedure for DMN2016LFG-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2016LFG-7 Tags

  • DMN2016LFG-7
  • DMN2016LFG-7 PDF
  • DMN2016LFG-7 Datasheet
  • DMN2016LFG-7 Specifications
  • DMN2016LFG-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN2016LFG-7
  • Buy DMN2016LFG-7
  • DMN2016LFG-7 Price
  • DMN2016LFG-7 Distributor
  • DMN2016LFG-7 Supplier
  • DMN2016LFG-7 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER