Diodes Incorporated DMN2016LHAB-7

Overview

DMN2016LHAB-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2030-6 package, rated for 20V V_DS, 15.5mΩ R_DS(on) at V_GS = 4.5V, and 7.5A continuous drain current at T_A = +25°C. It integrates ESD-protected gates and low gate threshold voltage (0.5–1.1V), enabling efficient load switching in compact battery-powered systems.

For engineers reviewing the DMN2016LHAB-7 datasheet, DMN2016LHAB-7 pinout, DMN2016LHAB-7 application, or DMN2016LHAB-7 equivalent, key selection factors include its dual-channel layout, 1.8V turn-on capability, 1550pF input capacitance, thermal resistance of 78°C/W (with enhanced pad), and compatibility with space-constrained power management PCBs.

Technical Context

This device implements two independent N-channel MOSFETs sharing a common drain contact on the bottom side, configured as a dual low-side switch. Its gate protection diodes and ±12V V_GSS rating support robust drive in noisy environments.

The MOSFETs feature fast switching (t_D(on) = 6.9ns, t_f = 12ns) and low total gate charge (Q_g = 16nC at V_GS = 4.5V), optimized for high-frequency DC-DC conversion and dynamic load control where conduction loss and gate drive energy must be minimized simultaneously.

Key Specifications

Pinout & Package

Package: U-DFN2030-6 (2.0 × 3.0 × 0.6mm), thermally enhanced with exposed drain pad (D1/D2) on bottom side. Molded green compound, NiPdAu-plated terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN2016LHAB-7, DMN2016LH-7 offers identical per-channel performance but doubles board area and assembly cost for dual functions, while SI2302DS-T1-GE3 trades higher conduction loss and external ESD protection for broader distributor availability and legacy design reuse.

Availability

DMN2016LHAB-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, and portable load switching applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for DMN2016LHAB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

This part belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained power management in portable and battery-operated equipment where low gate threshold and thermal performance are critical.

FAQ

What is the maximum safe operating temperature for DMN2016LHAB-7?

The device has a specified junction temperature range of –55°C to +150°C. With R_θJA = 78°C/W (enhanced pad layout), it can sustain 1.65W power dissipation at +25°C ambient while staying within the 150°C limit-equivalent to ~125°C junction rise. Derating is required above +70°C ambient per the datasheet's thermal curves.

Can DMN2016LHAB-7 be used in a back-to-back configuration for AC switching?

Yes-its dual N-channel structure and 20V V_DS rating allow implementation of bidirectional blocking in USB-C PD and power bank applications. When connected source-to-source with gate drives referenced to their respective sources, it provides true reverse-current blocking without body diode conduction, provided V_GS remains ≥1.1V during conduction.

Does the "26W" marking code indicate RoHS compliance?

No-the "26W" marking identifies the product type and date code format (YYWW). RoHS and halogen-free compliance are confirmed separately via Diodes' internal certification (Note 1 & 3 in the datasheet); the device meets EU Directive 2011/65/EU and contains <900ppm bromine/chlorine and <1000ppm antimony, verified through material declarations.

Is the bottom drain pad electrically isolated between the two channels?

No-the D1/D2 terminal is a single, shared copper pad on the underside of the package, electrically connecting the drains of both MOSFETs. This configuration supports parallel operation or common-drain topologies but prohibits independent drain biasing; source terminals (S1 and S2) remain fully isolated.