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Diodes Incorporated DMN2016UFX-7
- Part No.:
- DMN2016UFX-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 4-VFDFN Exposed Pad
- Datasheet:
-
DMN2016UFX-7.pdf
- Description:
- MOSFET 2N-CH 24V 9.9A 4VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,426
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Product details
Overview
DMN2016UFX-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a V-DFN2050-4 package, rated for 24V VDSS, 15mΩ RDS(ON) @ 4.5V VGS, and 9.9A continuous drain current at +25°C. It serves as a high-efficiency power switch in compact DC-DC converters and load-switching circuits.
For engineers reviewing the DMN2016UFX-7 datasheet, DMN2016UFX-7 pinout, DMN2016UFX-7 application, or DMN2016UFX-7 equivalent, key selection criteria include low-voltage gate drive capability (2.5V–4.5V), dual-channel integration in a 2.0×5.0mm footprint, and thermal resistance of 56°C/W with enhanced copper pad layout.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing a common source configuration (S1/G1/S2/G2/D1-D2), enabling synchronous rectification or complementary switching in half-bridge topologies. Its 0.6V gate threshold and 14nC total gate charge support fast turn-on with minimal drive loss.
The device uses a trench-gate process to achieve low RDS(ON) while maintaining robust avalanche rating (20A IAS, 21mJ EAS) and low input capacitance (950pF Ciss). It is characterized for operation from –55°C to +150°C with 100% ESD protection per HBM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 24V - supports 12V/24V rail systems with 100% margin over nominal supply |
| RDS(ON) max | 15mΩ @ 4.5V VGS - enables ≤150mW conduction loss at 9.9A, critical for thermally constrained PCBs |
| ID max | 9.9A @ +25°C - sufficient for 10A-class point-of-load regulators with derating |
| Ciss | 950pF - balances switching speed and gate drive strength for 1MHz-class converters |
| Qg | 14nC - allows clean 10ns-scale switching with <5Ω gate resistor, minimizing Miller plateau time |
| RθJA | 56°C/W - requires only 1-inch² 2oz copper pour for full-power operation without heatsink |
| tRR | 9.3ns - reduces body diode recovery loss in synchronous buck freewheeling |
Pinout & Package
Package: V-DFN2050-4 - 2.0mm × 5.0mm × 0.8mm ultra-thin molded plastic case with NiPdAu-plated terminals, UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Common-source node for dual-channel configuration; electrically tied to S2 internally in some layouts |
| G1 | Gate of Channel 1 | Independent control terminal; accepts 0–12V logic-level drive with 0.6V typical VGS(TH) |
| S2 | Source of Channel 2 | Shared source connection enabling half-bridge or parallel operation; verified via internal schematic |
| G2 | Gate of Channel 2 | Fully isolated gate input; identical electrical characteristics to G1 per datasheet Figure 2 |
| D1/D2 | Drain terminals (common drain) | Internally connected drains - confirmed by "D1/D2" marking and Equivalent Circuit diagram on page 1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Reduces board area by 40% vs. discrete dual-MOSFET solutions; eliminates interconnect inductance between channels |
| 2.5V gate drive capability | Enables direct interface with 2.5V/3.3V microcontrollers without level-shifting circuitry |
| Low Qgd/Qg ratio (46%) | Minimizes Miller-induced shoot-through risk in bridge configurations; improves hard-switching stability |
| 100% HBM ESD protection | Withstands ≥2kV human-body-model discharge without parameter shift-critical for automated assembly lines |
| Halogen- and antimony-free | Meets IPC-1752A Class 3 requirements for green electronics; <900ppm Br+Cl, <1000ppm Sb |
Applications
| USB-C Power Delivery Switch | Industrial PLC Digital Output Module |
|---|---|
Use Scenario: Bidirectional 20V/3A power path control in USB-C PD sink applications with reverse-current blocking. IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as back-to-back switch to enforce unidirectional current flow and prevent battery backfeed. Use Value: 15mΩ RDS(ON) limits voltage drop to <45mV at 3A, preserving PD negotiation voltage margins. | Use Scenario: Solid-state replacement for electromechanical relays driving 24V DC solenoids and indicator lamps in factory automation I/O modules. IC Role / Device Role / Timing Role: High-side load switch with integrated body diode clamping for inductive kickback suppression. Use Value: 20A pulsed drain rating and 21mJ avalanche energy absorb standard 24V solenoid turn-off transients without snubber. |
| Compact DC-DC Synchronous Buck Converter | Automotive Body Control Module (BCM) Load Switch |
Use Scenario: Integrated high-side/low-side switch pair in 12V→3.3V/5A buck converter for infotainment SoC power rails. IC Role / Device Role / Timing Role: Upper and lower FETs in single-phase synchronous rectification topology with shared source node. Use Value: Matched RDS(ON) and gate charge enable balanced duty-cycle operation up to 2MHz switching frequency. | Use Scenario: Protected 12V load switching for automotive interior lighting and mirror controls with diagnostic feedback. IC Role / Device Role / Timing Role: Low-side driver with current-limited soft-start and overtemperature shutdown. Use Value: 8.6A current capability at 2.5V VGS ensures reliable turn-on under cold-cranking (6.5V battery) conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2022UFG-7 | Higher RDS(ON) (22mΩ @ 4.5V), same V-DFN2050-4 package, 20V VDSS | Limited to ≤16V systems; lower avalanche rating (12mJ) | Select when cost sensitivity outweighs efficiency needs in 12V-only designs |
| SI6926ADQ-T1-GE3 | Single-die dual N-channel, 30V VDSS, 25mΩ @ 4.5V, SO-8 package | Larger footprint (5×6mm), higher thermal resistance (62°C/W), no MSL-1 rating | Choose for legacy SO-8 board compatibility where space permits and moisture sensitivity is not critical |
Compared with DMN2016UFX-7, DMN2022UFG-7 trades 47% higher conduction loss for lower unit cost, while SI6926ADQ-T1-GE3 sacrifices 15% thermal performance and RoHS-3 compliance for broader voltage headroom and established qualification history.
Availability
DMN2016UFX-7 is available at Aetrix Electronics and suitable for USB-C power delivery switches, industrial PLC digital output modules, and compact DC-DC synchronous buck converters requiring stable component supply and long-term production continuity.
Supply support for DMN2016UFX-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMN2016UFX-7 belongs to Diodes' "Ultra-Low RDS(ON) Logic-Level MOSFET" product line, engineered specifically for high-density power management in space-constrained consumer, computing, and industrial systems.
FAQ
What is the maximum safe operating temperature for DMN2016UFX-7?
The junction temperature must not exceed +150°C under any condition. With RθJA = 56°C/W and 1.07W power dissipation limit on standard FR-4, ambient temperature must stay below +93°C. Derating curves in Figure 12 confirm 9.9A continuous current is only valid at TA ≤ +25°C; at +70°C, max current drops to 7.9A.
Can DMN2016UFX-7 be used in a high-side switch configuration?
No - its dual-channel structure has common drains and separate sources (S1/S2), making it unsuitable for high-side switching without external level-shifting. It is optimized for low-side or back-to-back configurations where source terminals are referenced to ground or controlled potentials.
Is the body diode in DMN2016UFX-7 suitable for reverse polarity protection?
Yes - the intrinsic body diode exhibits 0.6V forward voltage at 1A (Figure 9) and 9.3ns reverse recovery time, enabling effective reverse-current blocking in USB-C and automotive load-switch applications when configured as a back-to-back pair with proper gate biasing.
Does DMN2016UFX-7 require special PCB layout considerations?
Yes - the V-DFN2050-4 package demands a minimum 1-inch² copper pour on the bottom thermal pad for rated 2.23W power dissipation. The datasheet specifies exact pad dimensions (D2=1.50mm, E2=3.56mm) and recommends solder mask defined pads to ensure void-free reflow and optimal thermal transfer to the PCB.
DMN2016UFX-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 4-VFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 24V
- Current - Continuous Drain (Id) @ 25°C:
- 9.9A (Ta)
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 950pF @ 10V
- Power - Max:
- 1.07W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN2050-4
DMN2016UFX-7 FAQ
1.How can I place an order for DMN2016UFX-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2016UFX-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2016UFX-7 reliable?
The price and inventory of DMN2016UFX-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2016UFX-7 is usually 5 days.
3.What payment methods are accepted for DMN2016UFX-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2016UFX-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2016UFX-7?
DMN2016UFX-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2016UFX-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2016UFX-7?
For technical support, including DMN2016UFX-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2016UFX-7 requirements.
6.How does Aetrix verify that DMN2016UFX-7 is sourced from the original manufacturer or authorized distributors?
All DMN2016UFX-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2016UFX-7 meets industry standards.
7.What is the process for return or replacement of DMN2016UFX-7?
All DMN2016UFX-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2016UFX-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2016UFX-7 part is unused and in its original packaging.
Return procedure for DMN2016UFX-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2016UFX-7 Tags
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