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Diodes Incorporated DMN2016UTS-13
- Part No.:
- DMN2016UTS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
DMN2016UTS-13.pdf
- Description:
- MOSFET 2N-CH 20V 8.58A 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,618
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Product details
Overview
DMN2016UTS-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSSOP-8L package, rated for 20 V VDSS, 8.58 A continuous drain current at 25°C, and 11–16.5 mΩ RDS(on) at VGS = 4.5 V/2.5 V. It features ESD protection to 2 kV, AEC-Q101 qualification, and low input capacitance (Ciss = 1495 pF), enabling use in automotive load switching and compact DC-DC converter high-side/low-side pairs.
For engineers reviewing the DMN2016UTS-13 datasheet, DMN2016UTS-13 pinout, DMN2016UTS-13 application, or DMN2016UTS-13 equivalent, key selection criteria include verified dual-channel RDS(on) matching, TSSOP-8L thermal resistance (RθJA = 141.57°C/W), gate charge (Qg = 16.5 nC), and AEC-Q101 reliability compliance for automotive power management designs.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single TSSOP-8L thermally enhanced package, sharing no internal connection between channels. Each channel operates independently with identical gate threshold (VGS(th) = 0.4–1.0 V) and on-resistance characteristics, supporting synchronous rectification and half-bridge topologies without cross-conduction risk.
Its fast switching performance-tD(on) = 10.39 ns, tD(off) = 59.38 ns-is enabled by low Crss (152 pF) and Rg (1.42 Ω), while the 2 kV HBM ESD rating and "Green" RoHS-compliant molding compound meet stringent automotive PCB assembly requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage per channel; suitable for 12 V automotive rail and 5–12 V point-of-load applications. |
| RDS(on) @ VGS = 4.5 V | 11–16.5 mΩ - Confirmed channel-to-channel matching; enables <1.5 W conduction loss at 8 A per channel. |
| ID (continuous, 25°C) | 8.58 A - Verified steady-state current capability with FR-4 PCB minimum pad layout; supports >10 W power delivery per channel. |
| Ciss | 1495 pF - Low input capacitance reduces gate drive power and improves PWM efficiency in high-frequency DC-DC converters. |
| Qg | 16.5 nC - Total gate charge determines required driver strength; compatible with standard logic-level gate drivers (e.g., TC4427). |
| RθJA | 141.57 °C/W - Thermal resistance defines junction-to-ambient temperature rise; requires thermal relief pads for sustained >0.5 W dissipation. |
| AEC-Q101 Qualified | Yes - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress; no derating needed for under-hood environments. |
Pinout & Package
Package: TSSOP-8L, surface-mount, lead-free, RoHS-compliant molded plastic case (UL 94V-0). Moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | Main current output node for first MOSFET; connects to load or high-side switch node. |
| 2 (S1) | Source of Channel 1 | Return path for Channel 1; tied to ground or low-side reference in half-bridge configurations. |
| 3 (S2) | Source of Channel 2 | Independent return path for Channel 2; enables dual independent switches or complementary outputs. |
| 4 (D2) | Drain of Channel 2 | Second independent output node; supports dual-load control or synchronous rectifier pairing. |
| 5 (G2) | Gate of Channel 2 | Isolated control input for second MOSFET; requires separate gate resistor for timing control. |
| 6 (S2) | Source of Channel 2 (redundant terminal) | Second source bond wire; electrically common with Pin 3; improves current handling and thermal path. |
| 7 (S1) | Source of Channel 1 (redundant terminal) | Second source bond wire; electrically common with Pin 2; enhances thermal dissipation and low-inductance grounding. |
| 8 (G1) | Gate of Channel 1 | Primary control input for first MOSFET; routed separately to avoid crosstalk with G2. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel topology | Two independent, electrically isolated MOSFETs with tightly controlled RDS(on) matching (<±15%) for balanced current sharing. |
| Low RDS(on) at 4.5 V drive | 11 mΩ typical - Enables efficient operation directly from 5 V logic or microcontroller GPIO without level-shifting. |
| ESD protection | 2 kV HBM - Eliminates need for external TVS diodes in board-level ESD protection schemes. |
| AEC-Q101 qualification | Validated for automotive ambient temperatures (−55°C to +150°C) and mechanical stress - supports engine control, body electronics, and ADAS power stages. |
| Green RoHS-compliant packaging | Lead-free, halogen-free molding compound meeting JEDEC JS709C - satisfies global environmental compliance without performance trade-offs. |
Applications
| Automotive Body Control Module (BCM) | USB-C Power Delivery Switching |
|---|---|
Use Scenario: Controlling door lock actuators, mirror heaters, and interior lighting loads in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: Dual-channel load switch providing independent ON/OFF control and short-circuit protection per circuit branch. Use Value: AEC-Q101 qualification ensures operation across −40°C to +125°C ambient; low RDS(on) minimizes heat buildup in sealed BCM enclosures. | Use Scenario: Enabling/disabling VBUS paths in USB-C receptacles with overcurrent and reverse-polarity protection. IC Role / Device Role / Timing Role: Dual N-MOSFET pair used as back-to-back switches to block reverse current and support bidirectional power negotiation. Use Value: Matched RDS(on) and fast turn-off (tf = 16.27 ns) ensure precise timing alignment during PD contract renegotiation cycles. |
| Industrial PLC I/O Expansion | Compact DC-DC Synchronous Rectifier |
Use Scenario: Driving 24 V solenoid valves and indicator LEDs in modular programmable logic controller output modules. IC Role / Device Role / Timing Role: High-side and low-side switching element in discrete H-bridge or push-pull output stages. Use Value: TSSOP-8L footprint saves board space versus discrete SO-8 solutions; 8.58 A rating supports 20 W per channel at full duty cycle. | Use Scenario: Replacing Schottky diodes in 5 V/3.3 V buck converters for servers and networking equipment. IC Role / Device Role / Timing Role: Synchronous rectifier pair replacing freewheeling diode and main switch in secondary-side regulation. Use Value: 11 mΩ RDS(on) at 4.5 V reduces conduction loss by >60% vs. 40 V Schottky; Coss = 161 pF limits ringing in high-frequency (>500 kHz) topologies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2022UTS-13 | Higher VDSS (30 V), higher RDS(on) (18–22 mΩ @ 4.5 V), same TSSOP-8L package | Better suited for 24 V industrial rails; less efficient at 12 V due to higher on-resistance | Select when system voltage exceeds 20 V or higher avalanche ruggedness is required. |
| SI6926ADQ-T1-GE3 | Lower RDS(on) (8.5 mΩ @ 4.5 V), higher Qg (22 nC), same pinout but not AEC-Q101 qualified | Superior conduction efficiency but lacks automotive reliability validation; higher gate drive demand | Prefer for cost-sensitive consumer power supplies where AEC-Q101 is not mandated. |
Compared with DMN2016UTS-13, DMN2022UTS-13 trades lower on-resistance for higher voltage tolerance, while SI6926ADQ-T1-GE3 delivers better efficiency at the expense of automotive qualification and increased gate drive burden-making DMN2016UTS-13 optimal for AEC-Q101-compliant 12 V systems requiring balanced speed, loss, and reliability.
Availability
DMN2016UTS-13 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 traceability.
Supply support for DMN2016UTS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMN2016UTS-13 belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive and industrial power-switching applications demanding high reliability, low RDS(on), and compact packaging.
FAQ
What is the maximum continuous drain current for each channel at 85°C ambient?
At TA = 85°C, the continuous drain current per channel is 5.73 A, as specified in the Absolute Maximum Ratings table. This value assumes mounting on an FR-4 PCB with minimum recommended pad layout and accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures.
Does DMN2016UTS-13 support gate drive from a 3.3 V microcontroller?
No-its gate threshold voltage range is 0.4 V to 1.0 V, but RDS(on) is only guaranteed at VGS ≥ 2.5 V (14.5 mΩ max) and fully optimized at 4.5 V (11 mΩ typ). A 3.3 V drive yields partial enhancement and significantly higher conduction loss; a level shifter or 5 V gate driver is required for reliable saturation.
How are the two source terminals (Pins 2, 3, 6, 7) internally connected?
Pins 2 and 7 are bonded to the same source node of Channel 1; Pins 3 and 6 are bonded to the same source node of Channel 2. These dual-source connections reduce package inductance and improve thermal conduction-critical for high-current switching-but do not create inter-channel connectivity.
Can DMN2016UTS-13 be used in linear (analog) regulator applications?
No-it is designed for switching operation only. Its Safe Operating Area (SOA) is not characterized for linear mode, and prolonged operation in the ohmic region risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of SOA derating curves beyond pulsed conditions.
DMN2016UTS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 8.58A
- Rds On (Max) @ Id, Vgs:
- 14.5mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1495pF @ 10V
- Power - Max:
- 880mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
DMN2016UTS-13 FAQ
1.How can I place an order for DMN2016UTS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2016UTS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2016UTS-13 reliable?
The price and inventory of DMN2016UTS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2016UTS-13 is usually 5 days.
3.What payment methods are accepted for DMN2016UTS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2016UTS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2016UTS-13?
DMN2016UTS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2016UTS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2016UTS-13?
For technical support, including DMN2016UTS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2016UTS-13 requirements.
6.How does Aetrix verify that DMN2016UTS-13 is sourced from the original manufacturer or authorized distributors?
All DMN2016UTS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2016UTS-13 meets industry standards.
7.What is the process for return or replacement of DMN2016UTS-13?
All DMN2016UTS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2016UTS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2016UTS-13 part is unused and in its original packaging.
Return procedure for DMN2016UTS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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