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Diodes Incorporated DMN2022UFDF-13

Part No.:
DMN2022UFDF-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMN2022UFDF-13.pdf
Description:
MOSFET N-CH 20V 7.9A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,448

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Product details

Overview

DMN2022UFDF-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 package, optimized for high-efficiency power management with RDS(ON) = 22 mΩ @ VGS = 4.5V, 7.9 A continuous drain current at +25°C, and ESD-protected gate. It serves as a low-side switch in compact DC-DC converters and battery protection circuits.

For engineers reviewing the DMN2022UFDF-13 datasheet, DMN2022UFDF-13 pinout, DMN2022UFDF-13 application, or DMN2022UFDF-13 equivalent, key selection criteria include low gate threshold (0.5–1.0 V), fast switching (tD(ON) = 56 ns), thermal resistance (RθJA = 60 °C/W with copper pad), and 0.6 mm profile for space-constrained PCB layouts.

Technical Context

This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining robust switching performance. Its gate threshold voltage range (0.5–1.0 V) enables direct drive from 1.8 V and 2.5 V logic, and its integrated ESD protection (HBM > 2 kV) eliminates need for external gate clamping in portable systems.

The device features a source-drain diode with VSD = 0.7–1.0 V at IS = 5 A and exhibits avalanche capability (IAS = 12 A, EAS = 8 mJ), supporting reliable operation under inductive load transients in synchronous buck stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS20 V - supports input rails up to 18 V with 10% margin for transient spikes
RDS(ON)22 mΩ @ VGS = 4.5V - delivers ≤1.4 W conduction loss at 7.9 A, critical for thermally constrained designs
ID (continuous)7.9 A @ TA = +25°C - sufficient for 5–6 A load currents in 12 V input DC-DC converters
Qg9.8 nC @ VGS = 4.5V - enables efficient gate driving with low-power controllers and reduces switching loss
RθJA60 °C/W (with 1-inch² copper pad) - allows 2.03 W power dissipation before junction exceeds 150°C
VGS(TH)0.5–1.0 V - ensures full enhancement at 1.8 V logic, eliminating level-shifter requirement
Ciss907 pF - balances switching speed and EMI control in MHz-range synchronous regulators

Pinout & Package

U-DFN2020-6 (Type F) package: 2.0 × 2.0 × 0.6 mm body, 0.65 mm pitch, NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 molding compound.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; low 194 Ω gate resistance minimizes ringing; ESD-protected per HBM Class 2
2 (S)SourceReference node for gate drive; connected to internal substrate; dual-source pads reduce parasitic inductance
3 (D)DrainMain current path; tied to exposed thermal pad (pins 4–6); handles 40 A pulsed drain current
4–6 (D)Drain (Thermal Pad)Primary heat dissipation path; requires soldered thermal connection to PCB ground plane

Key Features

FeatureDesign Value
Low-profile footprint0.6 mm height and 4 mm² area enable use in ultra-thin battery-powered devices
Enhanced thermal performanceExposed drain pad and 8.3 °C/W RθJC allow direct PCB heat sinking without heatsinks
Logic-level gate driveVGS(TH) max = 1.0 V ensures full turn-on from 1.8 V microcontrollers and PMICs
Fast switching with low QgdQgd = 1.8 nC limits Miller effect, enabling clean 1–2 MHz operation in buck converters
Green complianceHalogen- and antimony-free, RoHS 3 compliant, <900 ppm Br/Cl, <1000 ppm Sb

Applications

Battery Protection CircuitSynchronous Buck Converter

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role: Low-side protection switch controlling discharge path between battery and system load.

Use Value: 22 mΩ RDS(ON) limits voltage drop to <175 mV at 8 A, preserving battery runtime and reducing thermal stress on PCB traces.

Use Scenario: High-frequency step-down conversion in portable medical monitors and wearables.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode to improve efficiency above 85% at 1 A–5 A loads.

Use Value: Qg = 9.8 nC and tF = 239 ns enable clean 1.5 MHz switching with minimal dead-time loss and reduced output ripple.

USB Power Delivery SwitchLoad Switch for IoT Sensor Node

Use Scenario: Inrush-limited 5 V/3 A power path management in USB-C PD sink applications.

IC Role / Device Role: Controlled hot-swap switch with fast turn-off to prevent bus fault propagation.

Use Value: tD(OFF) = 632 ns and IDM = 40 A support rapid fault isolation during short-circuit events without latch-up.

Use Scenario: Standby power gating for BLE sensor modules powered by coin cells.

IC Role / Device Role: Ultra-low-leakage load switch enabling <1 µA off-state current and instant wake-up.

Use Value: IDSS ≤ 1 µA at VDS = 20 V and VGS = 0 V extends shelf life and preserves battery charge over multi-year deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2022LFG-7Same die, but in leaded SOT-23-6 package; RθJA = 188 °C/W (no thermal pad); higher profile (1.3 mm)Less suitable for high-power density layouts; better for prototyping or manual assemblySelect when thermal pad soldering is impractical or legacy board compatibility is required
AO3414RDS(ON) = 28 mΩ @ 4.5 V; Qg = 8.5 nC; no specified ESD rating; TO-236AB packageLacks integrated ESD protection; slightly higher conduction loss impacts efficiency in 5 A+ applicationsChoose only if cost sensitivity outweighs reliability requirements in non-portable industrial designs

Compared with DMN2022LFG-7 and AO3414, DMN2022UFDF-13 delivers superior thermal performance via its exposed drain pad, lower RDS(ON), and guaranteed ESD protection-making it optimal for miniaturized, battery-critical systems where efficiency and robustness are co-prioritized.

Availability

DMN2022UFDF-13 is available at Aetrix Electronics and suitable for battery management systems, portable DC-DC converters, and USB power delivery modules requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for DMN2022UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMN2022UFDF belongs to Diodes' U-DFN logic-level MOSFET product line, engineered specifically for space- and efficiency-constrained power switches in portable electronics and energy-harvesting systems.

FAQ

What is the maximum safe operating temperature for DMN2022UFDF-13?

The junction temperature must not exceed +150°C under any operating condition. With RθJA = 60 °C/W and PD = 2.03 W (with 1-inch² copper), ambient temperature must stay below +116°C to maintain safety margin. Derating is required above +70°C ambient per the datasheet's thermal curves.

Does DMN2022UFDF-13 require a gate resistor for stability?

A gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate loop inductance and Ciss/Crss interaction. The 194 Ω intrinsic gate resistance alone is insufficient for clean 1–2 MHz switching; external series resistance improves EMI and prevents shoot-through in half-bridge configurations.

Can DMN2022UFDF-13 be used in automotive applications?

DMN2022UFDF-13 is not AEC-Q101 qualified. While its -55°C to +150°C operating range meets automotive ambient requirements, it lacks PPAP documentation, IATF 16949 manufacturing certification, and stress-test validation for automotive use. Diodes offers AEC-Q101 variants (e.g., DMN2022UFDFQ) for qualified applications.

How does the U-DFN2020-6 thermal pad affect PCB layout?

The exposed drain pad (pins 4–6) must be fully soldered to a minimum 1-inch² copper pour connected to system ground. Thermal vias (≥6×0.3 mm) beneath the pad are strongly recommended to transfer heat to inner layers. Inadequate pad connection raises RθJA from 60 to 188 °C/W, risking thermal shutdown at >1.3 W dissipation.

DMN2022UFDF-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
7.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 8 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
907 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
660mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type F)

DMN2022UFDF-13 FAQ

1.How can I place an order for DMN2022UFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2022UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2022UFDF-13 reliable?

The price and inventory of DMN2022UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2022UFDF-13 is usually 5 days.

3.What payment methods are accepted for DMN2022UFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2022UFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2022UFDF-13?

DMN2022UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2022UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2022UFDF-13?

For technical support, including DMN2022UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2022UFDF-13 requirements.

6.How does Aetrix verify that DMN2022UFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMN2022UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2022UFDF-13 meets industry standards.

7.What is the process for return or replacement of DMN2022UFDF-13?

All DMN2022UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2022UFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2022UFDF-13 part is unused and in its original packaging.

Return procedure for DMN2022UFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2022UFDF-13 Tags

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