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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2022UFDF-7

Name: DMN2022UFDF-7
Brand: Diodes Incorporated
SKU: DMN2022UFDF-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2022UFDF-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMN2022UFDF-7.pdf

Description:: MOSFET N-CH 20V 7.9A 6UDFN

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Product details

Overview

DMN2022UFDF-7 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 package, optimized for low R_DS(ON) (22 mΩ @ V_GS = 4.5 V) and fast switching, with 7.9 A continuous drain current at T_A = +25°C and ESD-protected gate. It serves as a high-efficiency power switch in compact DC-DC converters and battery management circuits.

For engineers reviewing the DMN2022UFDF-7 datasheet, DMN2022UFDF-7 pinout, DMN2022UFDF-7 application, or DMN2022UFDF-7 equivalent, key selection criteria include its 1.5 V gate threshold, 9.8 nC total gate charge at 4.5 V, 0.6 mm profile, 4 mm² footprint, and thermal resistance of 60 °C/W under enhanced PCB layout.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low on-resistance while maintaining controlled gate charge and fast turn-on/turn-off times (t_D(ON) = 56 ns, t_F = 239 ns). Its low V_GS(TH) (0.5–1.0 V) enables direct drive from 1.8 V logic, and integrated ESD protection (HBM > 2 kV) supports robust handling in automated assembly.

The device features a source-drain diode with V_SD = 0.7–1.0 V at I_S = 5 A and exhibits avalanche capability (I_AS = 12 A, E_AS = 8 mJ), enabling reliable operation in inductive switching environments such as synchronous buck converters and load switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage compatible with 12 V input rails and 3.3/5 V logic-level control
R_DS(ON)	22 mΩ @ V_GS = 4.5 V - Enables ≤100 mW conduction loss at 7 A, critical for thermally constrained portable designs
I_D (continuous)	7.9 A @ T_A = +25°C - Supports high-current power stages when mounted on 1-inch² copper pad (P_D = 2.03 W)
Q_g	9.8 nC @ V_GS = 4.5 V - Low gate drive energy reduces controller loading and switching losses in high-frequency (>1 MHz) converters
R_θJA	60 °C/W (enhanced layout) - Allows junction temperature rise of <60°C at 2 W dissipation, supporting ambient up to +85°C
V_GS(TH)	0.5–1.0 V - Ensures full enhancement with 1.8 V microcontroller GPIO, eliminating level-shifter requirement
C_iss	907 pF - Predictable input capacitance simplifies gate driver sizing and loop stability analysis

Pinout & Package

Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, RoHS-compliant NiPdAu-plated terminals.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; low 194 Ω gate resistance minimizes ringing; ESD-protected per HBM Class 2
2 (S)	Source	Reference node for gate drive; connected to internal substrate; forms cathode of body diode
3 (D)	Drain	High-side or low-side power path; tied to exposed thermal pad for heat transfer to PCB
4 (S)	Source	Second source connection; paralleled with Pin 2 to reduce source inductance in high-di/dt applications
5 (D)	Drain	Second drain connection; paralleled with Pin 3 to lower R_DS(ON) and improve current sharing
6 (G)	Gate	Redundant gate terminal; improves gate drive uniformity and reduces asymmetry in high-speed switching

Key Features

Feature	Design Value
Low-profile U-DFN2020-6	0.6 mm height enables use in ultra-thin consumer electronics and wearable power modules
PCB footprint	4 mm² area minimizes board space versus SO-8 or SOT-23 alternatives, easing dense layout in PMICs
ESD-protected gate	HBM > 2 kV rating eliminates need for external gate protection in standard SMT lines
Lead-free & green	Halogen- and antimony-free (<900 ppm Br+Cl, <1000 ppm Sb) meets automotive and medical environmental mandates
Fast switching	t_R = 87 ns and t_F = 239 ns support >1 MHz operation with minimal dead-time loss in synchronous rectifiers

Applications

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Bidirectional overvoltage/overcurrent protection in single-cell Li-ion battery packs with integrated fuel gauging.

IC Role / Device Role / Timing Role: Low-side main switch controlling charge/discharge path; body diode enables reverse-current blocking during fault conditions.

Use Value: 22 mΩ R_DS(ON) limits voltage drop to <175 mV at 8 A, preserving battery runtime and thermal margin in 5 × 5 mm BMS modules.

Use Scenario: 5–20 V bidirectional power path switching in USB-C PD 3.1 sink applications with programmable voltage negotiation.

IC Role / Device Role / Timing Role: High-side load switch enabling/disabling VBUS with controlled slew rate; gate driven directly by 3.3 V MCU GPIO.

Use Value: 1.0 V max V_GS(TH) ensures full turn-on at 3.3 V, eliminating level shifter; 0.6 mm profile fits beneath USB-C connector keep-out zone.

Compact DC-DC Buck Converter

Smartphone Backlight LED Driver

Use Scenario: High-frequency (2 MHz) synchronous buck regulator supplying core voltage to ARM Cortex-M7 SoCs in industrial edge nodes.

IC Role / Device Role / Timing Role: Bottom-side synchronous rectifier; commutates with 50 ns dead time; body diode handles reverse recovery during light-load DCM.

Use Value: 9.8 nC Q_g reduces gate drive loss by 40% vs. comparable 30 mΩ MOSFETs, improving efficiency above 92% at 1 A output.

Use Scenario: PWM-controlled current sink for white LED strings in OLED display backlight systems requiring <1% current ripple.

IC Role / Device Role / Timing Role: Low-side current regulation switch; switched at 20 kHz with precise duty-cycle control from baseband processor.

Use Value: 26 mΩ R_DS(ON) @ V_GS = 2.5 V matches typical LED driver IC output swing, minimizing dropout and enabling 3.0 V minimum input operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2022LFG-7	Same die, but in leaded SOT-23-6 package; R_DS(ON) identical, but R_θJA = 120 °C/W (no thermal pad)	Preferred where reworkability or through-hole compatibility required; unsuitable for >3 A continuous loads	Select for prototyping or low-volume production where thermal performance is secondary to assembly flexibility
AO3414	Higher R_DS(ON) (35 mΩ @ 4.5 V); Q_g = 12 nC; no specified ESD rating; same U-DFN2020-6 footprint	Acceptable for cost-sensitive consumer chargers where 5% efficiency loss is tolerable and ESD robustness not mandated	Select only if BOM cost reduction outweighs thermal derating and field-reliability requirements

Compared with DMN2022LFG-7, DMN2022UFDF-7 delivers 3× better thermal performance and smaller footprint; compared with AO3414, it offers 37% lower conduction loss, 18% less gate charge, and guaranteed ESD protection-critical for automated manufacturing and high-reliability end equipment.

Availability

DMN2022UFDF-7 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and compact DC-DC converters requiring stable component supply across industrial, computing, and portable electronics programs.

Supply support for DMN2022UFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This part belongs to Diodes' U-DFN Power MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion in portable and battery-powered devices where thermal density and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for DMN2022UFDF-7 at 70°C ambient?

The maximum continuous drain current is 6.3 A at T_A = +70°C with standard FR-4 PCB (2 oz copper, minimum pad layout), and 7.5 A under enhanced thermal conditions (1-inch² copper pad). These values derive directly from the datasheet's steady-state power dissipation ratings (P_D = 0.42 W and 1.31 W, respectively) and R_DS(ON) derating curves.

Does DMN2022UFDF-7 require an external gate resistor for stability?

No external gate resistor is required for basic stability due to its intrinsic 194 Ω gate resistance and low C_iss/C_rss ratio (907 pF / 38 pF). However, a 1–5 Ω series resistor is recommended in high-di/dt applications (>5 A/ns) to dampen potential gate oscillation and reduce EMI emissions during hard switching.

Can DMN2022UFDF-7 be used in avalanche mode for inductive load switching?

Yes-it is rated for 12 A single-pulse avalanche current and 8 mJ avalanche energy (L = 0.1 mH), verified per JEDEC JESD24-1. This allows safe operation in non-synchronous flyback or relay-driving applications without external snubbers, provided pulse repetition and duty cycle remain within the transient thermal limits shown in Figure 11.

Is the exposed thermal pad electrically isolated or connected to the drain?

The exposed thermal pad is internally connected to the drain terminal (Pin 3 and Pin 5), as confirmed by the internal schematic and mechanical drawings. It must be soldered to a PCB copper pour tied to the drain net to ensure both thermal performance and electrical integrity; floating or grounding the pad will cause functional failure.

DMN2022UFDF-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 7.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 907 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 660mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMN2022UFDF-7 FAQ

1.How can I place an order for DMN2022UFDF-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2022UFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2022UFDF-7 reliable?

The price and inventory of DMN2022UFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2022UFDF-7 is usually 5 days.

3.What payment methods are accepted for DMN2022UFDF-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2022UFDF-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2022UFDF-7?

DMN2022UFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2022UFDF-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2022UFDF-7?

For technical support, including DMN2022UFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2022UFDF-7 requirements.

6.How does Aetrix verify that DMN2022UFDF-7 is sourced from the original manufacturer or authorized distributors?

All DMN2022UFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2022UFDF-7 meets industry standards.

7.What is the process for return or replacement of DMN2022UFDF-7?

All DMN2022UFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2022UFDF-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2022UFDF-7 part is unused and in its original packaging.

Return procedure for DMN2022UFDF-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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