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Diodes Incorporated DMN2022UNS-13
- Part No.:
- DMN2022UNS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN2022UNS-13.pdf
- Description:
- MOSFET 2N-CH 20V 10.7A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:8,182
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Product details
Overview
DMN2022UNS-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a POWERDI®3333-8 package, designed for high-efficiency load switching and power management. It delivers 10.7A continuous drain current at VGS = 10V, 10.8mΩ RDS(ON) at VGS = 4.5V, and 20V VDSS, supporting compact DC-DC converters and battery-powered USB port protection.
For engineers reviewing the DMN2022UNS-13 datasheet, DMN2022UNS-13 pinout, DMN2022UNS-13 application, or DMN2022UNS-13 equivalent, key selection criteria include low-voltage gate drive compatibility (1.8V–4.5V), dual-channel integration for space-constrained load switching, thermal performance on FR-4 with 2oz copper, and ESD robustness (2kV HBM).
Technical Context
This dual MOSFET integrates two matched N-channel devices sharing a common source configuration (S1/S2 tied internally per schematic), enabling synchronous rectification or independent high-side/low-side control in compact buck regulators. Its low RDS(ON) at 1.8V–4.5V gate drive supports direct interfacing with 1.8V/3.3V logic and microcontroller GPIOs without level shifting.
The device features integrated gate protection diodes on both channels, low Ciss (1870pF) and Crss (160pF), and fast switching (tr = 101ns, tf = 224ns), minimizing conduction and switching losses in high-frequency (>1MHz) point-of-load applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Supports input rails up to 18V with 10% margin for transient spikes in portable power systems. |
| RDS(ON) max | 10.8mΩ @ VGS = 4.5V - Enables ≤50mW conduction loss at 7A, critical for thermally constrained PCB layouts. |
| ID max | 10.7A @ TA = +25°C - Sustains peak load currents in USB-C PD sink circuits and eMMC power switches. |
| Ciss | 1870pF - Limits gate drive power requirement and enables clean turn-on with standard 1Ω–10Ω gate resistors. |
| Qg | 20.3nC - Allows full switching within <1μs using ≤10mA average gate drive current at 1MHz operation. |
| TJ range | −55°C to +150°C - Qualified for automotive cabin and industrial motor control ambient environments. |
| EAS | 14.7mJ - Withstands single-pulse inductive energy from 100mA–2A solenoid or relay coil flyback. |
Pinout & Package
Package: POWERDI®3333-8 (Type UXB), surface-mount, 8-terminal leadless plastic package with exposed thermal pad; dimensions 3.30mm × 3.30mm × 0.80mm (L×W×H); moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-current output node for first MOSFET; connects to load or inductor in buck topology. |
| G1 | Gate of Channel 1 | Logic-level control input; requires no external level shifter for 1.8V–4.5V MCU outputs. |
| S1 | Source of Channel 1 | Reference node for Channel 1; internally tied to S2 for common-source dual configuration. |
| D2 | Drain of Channel 2 | Independent high-current output for second load path or synchronous rectifier leg. |
| G2 | Gate of Channel 2 | Separate control input enabling independent or complementary switching of dual channels. |
| S2 | Source of Channel 2 | Common-source connection point; ties to S1 and thermal pad for low-inductance grounding. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 1.8V | 17.0mΩ - Enables reliable turn-on with ultra-low-voltage controllers (e.g., ARM Cortex-M0+ GPIOs). |
| ESD protection | 2kV HBM - Eliminates need for external TVS diodes in handheld device I/O protection circuits. |
| Complementary pair structure | Matched channel parameters (RDS(ON), VGS(TH)) - Ensures balanced current sharing in parallel load paths. |
| Low Qgd/Qg ratio | 3.6nC / 20.3nC = 0.18 - Reduces Miller effect, improving noise immunity during hard-switching transitions. |
| Green packaging | Halogen- and antimony-free, RoHS-compliant - Meets IPC-1752A reporting requirements for Tier-1 automotive BOMs. |
Applications
| USB Type-C Port Power Switching | Battery Protection Circuitry |
|---|---|
Use Scenario: Dual-path switching for VBUS and CC line power delivery in USB-C receptacles. IC Role / Device Role / Timing Role: Dual N-channel load switch controlling 5V/9V/15V/20V VBUS routing and CC line pull-up/down. Use Value: 10.8mΩ RDS(ON) limits voltage drop to <55mV at 5A, preserving PD negotiation accuracy and reducing thermal derating. |
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs (2.5–4.2V). IC Role / Device Role / Timing Role: Back-to-back configured dual MOSFET for bidirectional blocking and charge/discharge path control. Use Value: Matched threshold (0.4–1.0V) and on-resistance enable precise current-sense amplifier offset compensation in protection IC feedback loops. |
| Compact DC-DC Buck Converter | Industrial I/O Module Load Switching |
Use Scenario: High-frequency (1–2MHz) synchronous rectification in 12V-to-3.3V/1.8V point-of-load converters. IC Role / Device Role / Timing Role: Low-side switch paired with external high-side FET or integrated controller for duty-cycle regulation. Use Value: 224ns fall time and 160pF Crss minimize shoot-through risk and improve light-load efficiency above 92%. |
Use Scenario: Individual 24V DC load enable/disable in PLC digital output modules with 8–16 channels. IC Role / Device Role / Timing Role: Independent channel switching for isolated 24V loads (solenoids, indicators, sensors) with status feedback. Use Value: 10.7A rating per channel supports 2A steady-state loads with 5× surge margin; thermal resistance (67°C/W) allows 1.9W dissipation on 2oz copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2022LSD-13 | Same die, but in SO-8 package (larger footprint, higher RθJA = 75°C/W). | Preferred where manual rework or legacy board compatibility is required over miniaturization. | Select when thermal budget allows >10°C/W higher junction-to-ambient resistance and PCB real estate permits 4.9mm × 6.0mm footprint. |
| SiA913EDJ-T1-GE3 | Lower RDS(ON) (8.5mΩ @ 4.5V) but higher Qg (27nC); no integrated gate protection diodes. | Requires external gate clamping for 12V transients; better suited for fixed 5V gate-drive systems. | Choose only if gate drive voltage is stable ≥4.5V and layout includes discrete Zener clamps; avoid for 1.8V/3.3V MCU direct drive. |
Compared with DMN2022LSD-13, the DMN2022UNS-13 saves 40% board area and improves thermal performance by 11°C/W; versus SiA913EDJ-T1-GE3, it trades 1.7mΩ lower RDS(ON) for guaranteed 2kV ESD tolerance and gate-protected reliability in noisy industrial environments.
Availability
DMN2022UNS-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, battery management systems, compact DC-DC converters, and industrial I/O modules requiring stable component supply across multi-year production cycles.
Supply support for DMN2022UNS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.
The DMN2022UNS-13 belongs to Diodes' POWERDI® family of high-density MOSFETs, engineered specifically for space-constrained, high-efficiency power switching in portable and industrial equipment where thermal performance and gate-drive flexibility are critical.
FAQ
What is the maximum safe operating temperature for DMN2022UNS-13 in continuous operation?
The device supports continuous operation up to +150°C junction temperature. At ambient +70°C with 2oz copper thermal pad per AP02001 layout, its 1.9W power dissipation limit corresponds to ~110°C junction rise, staying within specification. Derating is required above 70°C ambient per Figure 5 and Figure 7 data.
Can DMN2022UNS-13 be used in back-to-back configuration for AC load switching?
No - it is a dual N-channel device without integrated body diode reverse-blocking capability in series configurations. For AC switching, discrete external diodes or dedicated bidirectional switches (e.g., DMN3029LSD) are required. Its internal body diodes conduct in one direction only.
Does the POWERDI®3333-8 package require solder paste stencil adjustments compared to SO-8?
Yes - the 0.65mm pitch and exposed thermal pad demand a 5–6 mil thick stencil with 70–80% aperture reduction for the thermal pad to prevent solder bridging and voiding. Recommended reflow profile follows J-STD-020 Level 1, peak 260°C for 10 seconds.
Is the 2kV ESD rating applicable to all pins including drains and sources?
Yes - the 2kV Human Body Model (HBM) rating applies to all terminals (G1, G2, D1, D2, S1, S2) per DS38050 Rev. 2 test methodology. Gate protection diodes are integrated on both channels, making it robust against handling and board-level ESD events without external clamps.
DMN2022UNS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 10.7A (Ta)
- Rds On (Max) @ Id, Vgs:
- 10.8mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1870pF @ 10V
- Power - Max:
- 1.2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXB)
DMN2022UNS-13 FAQ
1.How can I place an order for DMN2022UNS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2022UNS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2022UNS-13 reliable?
The price and inventory of DMN2022UNS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2022UNS-13 is usually 5 days.
3.What payment methods are accepted for DMN2022UNS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2022UNS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2022UNS-13?
DMN2022UNS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2022UNS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2022UNS-13?
For technical support, including DMN2022UNS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2022UNS-13 requirements.
6.How does Aetrix verify that DMN2022UNS-13 is sourced from the original manufacturer or authorized distributors?
All DMN2022UNS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2022UNS-13 meets industry standards.
7.What is the process for return or replacement of DMN2022UNS-13?
All DMN2022UNS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2022UNS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2022UNS-13 part is unused and in its original packaging.
Return procedure for DMN2022UNS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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