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Diodes Incorporated DMN2022UNS-7
- Part No.:
- DMN2022UNS-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN2022UNS-7.pdf
- Description:
- MOSFET 2N-CH 20V 10.7A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:4,000
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Product details
Overview
DMN2022UNS-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a POWERDI®3333-8 package, designed for high-efficiency load switching with 20V V(BR)DSS, 10.8mΩ RDS(ON) @ 4.5V VGS, and 10.7A continuous drain current at +25°C. It integrates two matched MOSFETs with gate protection diodes and ESD protection up to 2kV, targeting compact DC-DC power stages and battery-powered load management.
For engineers reviewing the DMN2022UNS-7 datasheet, DMN2022UNS-7 pinout, DMN2022UNS-7 application, or DMN2022UNS-7 equivalent, key selection criteria include its low-voltage gate drive capability (1.8V–4.5V), dual-channel integration in a thermally enhanced 8-pin surface-mount package, and validated performance in high-side/low-side synchronous buck configurations requiring <15mΩ on-resistance at sub-3V gate bias.
Technical Context
This dual N-channel MOSFET uses planar silicon technology optimized for low RDS(ON) while preserving fast switching speed (tD(ON) = 62ns, tD(OFF) = 596ns) and low input capacitance (Ciss = 1870pF). Its internal gate protection diodes enable robust operation in bidirectional current paths without external clamping.
The device supports logic-level gate drive down to 1.8V, delivering 8.6A ID at VGS = 1.8V with RDS(ON) ≤ 17.0mΩ, and maintains stable threshold voltage (VGS(TH) = 0.4–1.0V) across -55°C to +150°C junction temperature range-critical for automotive body electronics and industrial PMICs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20V - Maximum blocking voltage before avalanche conduction; enables use in 12V automotive and 5V/3.3V system rails. |
| RDS(ON) max | 10.8mΩ @ VGS = 4.5V - Ensures <50mW conduction loss at 4A load, supporting high-efficiency load switches and OR-ing circuits. |
| ID max (TA=25°C) | 10.7A - Continuous drain current rating under standard PCB thermal conditions; defines safe operating area for sustained power delivery. |
| Ciss | 1870pF - Low input capacitance reduces gate drive power and speeds up turn-on, critical for >1MHz DC-DC controllers. |
| Qg | 20.3nC - Total gate charge determines driver strength requirement; compatible with low-power microcontroller GPIOs when paired with appropriate gate resistor. |
| TJ range | -55°C to +150°C - Extended junction temperature range supports under-hood automotive and industrial ambient environments. |
| ESD rating | 2kV HBM - On-chip ESD protection eliminates need for external TVS in board-level ESD immunity design per IEC 61000-4-2 Level 2. |
Pinout & Package
Package: POWERDI®3333-8 (Type UXB), 8-pin thermally enhanced surface-mount package with exposed drain pad; dimensions 3.30mm × 3.30mm × 0.80mm; UL 94V-0 rated molding compound; matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | Main current path for first MOSFET; electrically tied to exposed thermal pad for low RθJA (67°C/W). |
| G1 | Gate of Channel 1 | Logic-level control input; requires no level-shifting for 1.8V–4.5V MCU outputs. |
| S1 | Source of Channel 1 | Reference node for Channel 1; internally connected to substrate ground plane in dual-die layout. |
| D2 | Drain of Channel 2 | Independent high-current path for second MOSFET; enables synchronous rectification or dual-load isolation. |
| G2 | Gate of Channel 2 | Separate gate terminal allows independent control of both channels-no shared gate drive constraint. |
| S2 | Source of Channel 2 | Isolated source node; permits floating-source topologies such as high-side switch with bootstrap gate drive. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 1.8V VGS | 17.0mΩ - Enables direct interface with ultra-low-voltage MCUs (e.g., ARM Cortex-M0+) without gate drivers. |
| Dual-channel integration | Matched characteristics (RDS(ON), VGS(TH)) between channels - simplifies layout and timing in half-bridge or dual-load applications. |
| Fast switching with low Qgd | 3.6nC gate-drain charge - minimizes Miller plateau duration and improves efficiency in hard-switched SMPS. |
| Thermally optimized package | 67°C/W RθJA (with 2oz copper thermal bias) - delivers 1.9W power dissipation capability in space-constrained designs. |
| Integrated gate protection | On-die Zener diodes on G1/G2 - suppresses gate overvoltage transients during hot-plug or inductive load switching. |
Applications
| USB Type-C Power Delivery Switching | Automotive Body Control Module Load Switching |
|---|---|
|
Use Scenario: Bidirectional 5V/20V power path control in USB-C port with programmable voltage negotiation and fault isolation. IC Role / Device Role / Timing Role: Dual N-channel MOSFET configured as back-to-back switch to block reverse current and support VBUS/VCONN routing. Use Value: 10.8mΩ RDS(ON) limits voltage drop to <54mV at 5A, preserving PD contract compliance; 2kV ESD rating meets IEC 61000-4-2 system-level requirements. |
Use Scenario: Controlled activation of LED lighting, window lift motors, and HVAC actuators in 12V vehicle electrical architecture. IC Role / Device Role / Timing Role: High-side load switch replacing mechanical relays; driven by CAN/LIN microcontroller GPIOs. Use Value: 1.8V gate compatibility eliminates level shifters; -55°C to +150°C TJ range ensures reliability across engine bay and cabin zones. |
| Industrial PLC Digital Output Module | Portable Medical Device Battery Management |
|
Use Scenario: Solid-state replacement for electromechanical relays in 24V DC output cards with short-circuit and overtemperature protection. IC Role / Device Role / Timing Role: Dual-channel switch enabling redundant load control or parallel current sharing for >10A outputs. Use Value: Matched channel parameters ensure balanced current distribution; 60A pulsed IDM rating withstands motor startup surges. |
Use Scenario: Isolation and sequencing of Li-ion battery packs in portable ultrasound, infusion pumps, and patient monitors. IC Role / Device Role / Timing Role: Load switch for battery disconnect and backup power path selection in dual-battery systems. Use Value: Ultra-low leakage (<1µA IDSS) preserves standby battery life; green RoHS/halogen-free construction meets medical regulatory standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2022LSD-7 | Same die, but in SO-8 package with higher RθJA (107°C/W) and larger footprint (4.9mm × 6.0mm). | Limited to lower-power applications due to reduced thermal performance; unsuitable for >5A continuous loads on compact PCBs. | Select when legacy SO-8 footprint compatibility is required and thermal headroom exists. |
| SI6926ADQ-T1-GE3 | Higher RDS(ON) (15mΩ @ 4.5V), smaller Ciss (1400pF), and no integrated gate protection diodes. | Requires external gate clamping for inductive loads; better suited for high-frequency (>2MHz) point-of-load converters. | Select when minimizing gate drive loss outweighs need for built-in transient protection. |
Compared with DMN2022LSD-7, the DMN2022UNS-7 offers 37% lower thermal resistance and 40% smaller board area; versus SI6926ADQ-T1-GE3, it trades 4.2mΩ higher RDS(ON) for integrated gate protection and superior low-VGS drive capability-making it optimal for cost-sensitive, space-constrained load switching where robustness matters more than peak frequency.
Availability
DMN2022UNS-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, automotive body control modules, and industrial PLC digital output modules requiring stable component supply, long-term lifecycle assurance, and full traceability.
Supply support for DMN2022UNS-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.
The DMN2022UNS-7 belongs to Diodes' POWERDI® family of thermally enhanced MOSFETs, engineered specifically for space-constrained, high-efficiency load switching in battery-powered and automotive applications where low gate-threshold operation and robust ESD tolerance are mandatory.
FAQ
What is the maximum safe operating voltage for DMN2022UNS-7?
The absolute maximum drain-source voltage (VDSS) is 20V, verified per DS38050 Rev. 2. Operation above this rating risks avalanche breakdown and permanent damage-even brief transients exceeding 20V must be clamped externally using TVS diodes or RC snubbers aligned with the device's 17.1A IAS rating.
Can DMN2022UNS-7 be used in a high-side configuration with 3.3V GPIO control?
Yes-its guaranteed VGS(TH) of 0.4–1.0V and RDS(ON) of 14.5mΩ at 2.5V VGS allow reliable turn-on with 3.3V microcontroller outputs. For high-side use, connect S1/S2 to load, D1/D2 to supply, and ensure gate drive reference matches source potential via level-shifting or isolated driver if needed.
Does DMN2022UNS-7 require external gate resistors for EMI control?
While not mandatory, a 10Ω series gate resistor is recommended to dampen ringing caused by 96Ω intrinsic gate resistance interacting with 1870pF Ciss and PCB trace inductance. This reduces radiated emissions in Class B digital systems without significantly impacting 62ns turn-on delay.
How does the POWERDI®3333-8 package improve thermal performance over SO-8?
The POWERDI®3333-8 exposes the drain pads directly to the PCB copper, achieving 67°C/W RθJA (vs. 107°C/W for SO-8) when using 2oz thermal bias. This 37% improvement allows 1.9W power dissipation at +70°C ambient-critical for fanless industrial enclosures and automotive junction boxes.
DMN2022UNS-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 10.7A (Ta)
- Rds On (Max) @ Id, Vgs:
- 10.8mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1870pF @ 10V
- Power - Max:
- 1.2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXB)
DMN2022UNS-7 FAQ
1.How can I place an order for DMN2022UNS-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2022UNS-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2022UNS-7 reliable?
The price and inventory of DMN2022UNS-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2022UNS-7 is usually 5 days.
3.What payment methods are accepted for DMN2022UNS-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2022UNS-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2022UNS-7?
DMN2022UNS-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2022UNS-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2022UNS-7?
For technical support, including DMN2022UNS-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2022UNS-7 requirements.
6.How does Aetrix verify that DMN2022UNS-7 is sourced from the original manufacturer or authorized distributors?
All DMN2022UNS-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2022UNS-7 meets industry standards.
7.What is the process for return or replacement of DMN2022UNS-7?
All DMN2022UNS-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2022UNS-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2022UNS-7 part is unused and in its original packaging.
Return procedure for DMN2022UNS-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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