Diodes Incorporated DMN2023UCB4-7

Overview

DMN2023UCB4-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in X1-WLB1818-4 wafer-level chip-scale package, rated for 24V V(BR)SSS, 26mΩ R_SS(ON) at V_GS = 4.5V, and 6.0A continuous source current at T_A = +25°C. It integrates dual-source/dual-gate structure with built-in gate-source ESD protection (2kV HBM), optimized for compact, high-efficiency battery protection and load switching.

For engineers reviewing the DMN2023UCB4-7 datasheet, DMN2023UCB4-7 pinout, DMN2023UCB4-7 application, or DMN2023UCB4-7 equivalent, key selection criteria include its ultra-low on-resistance at low gate drive (21.5mΩ typ. at V_GS = 4.5V), AEC-Q101 qualification, WLCSP thermal performance (R_θJA = 88.21°C/W), and dual-source configuration enabling parallel current handling without external balancing.

Technical Context

This MOSFET employs a dual-source/dual-gate topology-two independent N-channel cells sharing a common drain-enabling higher current density within a 1.8mm × 1.8mm footprint. Its thin WLCSP construction minimizes parasitic inductance and thermal resistance while maintaining fast switching: t_D(ON) = 10–15ns, t_F = 29ns, and Q_g = 29–37nC at V_GS = 4.5V.

The device features a low gate threshold voltage (V_GS(TH) = 0.5–1.3V), allowing reliable turn-on from 3.3V logic, and includes integrated G-S protection diodes per channel. Electrical characteristics are specified across –55°C to +150°C, with R_SS(ON) normalized to ≤2.0× nominal at T_J = 150°C.

Key Specifications

Pinout & Package

Package: X1-WLB1818-4 - 1.8mm × 1.8mm wafer-level chip-scale package with four solder bumps; moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Compared with DMN2023LSD-13 and DMN3023LSD-13, DMN2023UCB4-7 provides 22% lower R_SS(ON), 35% smaller footprint, and 27% better thermal resistance-making it optimal for space- and efficiency-critical battery-powered designs where 24V absolute maximum is sufficient.

Availability

DMN2023UCB4-7 is available at Aetrix Electronics and suitable for battery protection, USB-C power delivery, wireless charging, and industrial IoT sensor node applications requiring stable component supply, AEC-Q101 reliability, and ultra-compact WLCSP packaging.

Supply support for DMN2023UCB4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' high-efficiency power MOSFET product line, engineered specifically for space-constrained, high-reliability battery management and load switching in portable, automotive, and industrial systems.

FAQ

What is the maximum gate-source voltage rating for DMN2023UCB4-7?

The absolute maximum V_GS is ±12V per datasheet, but AEC-Q101 qualification limits operational use to ±9.6V. Exceeding ±9.6V voids automotive qualification compliance, though short-duration transients up to ±12V are survivable per test conditions. Designers should use gate drivers with clamped output or Zener limiting when interfacing with 12V logic.

Can DMN2023UCB4-7 be used in high-side switching configurations?

No-it is optimized as a low-side switch with source terminals referenced to ground. The dual-source structure lacks an isolated drain terminal suitable for high-side bootstrap operation. For high-side loads, use complementary P-channel devices like DMP3028L or dedicated high-side drivers with integrated charge pumps.

How does the dual-source configuration affect PCB layout and thermal design?

S1 and S2 must be routed with matched trace length and width to ensure balanced current sharing; asymmetry causes thermal imbalance and premature failure. Thermal vias under both source pads are mandatory-minimum 4×0.3mm vias per pad-to maintain T_J <125°C at 6A. The X1-WLB1818-4 footprint requires solder mask defined pads per Diodes' recommended layout.

Is DMN2023UCB4-7 compatible with lead-free reflow profiles?

Yes-it is fully RoHS-compliant and qualified for standard lead-free reflow with peak temperature up to 260°C (per J-STD-020 Level 1). The WLCSP structure has no wire bonds or mold compound, eliminating popcorning risk. Reflow profile must limit time above 220°C to <60 seconds and ramp rate to ≤3°C/s to prevent solder bump fracture.