Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN2024UDH-7

Part No.:
DMN2024UDH-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerUDFN
Datasheet:
AetrixDMN2024UDH-7.pdf
Description:
MOSFET 2N-CH 20V 5.2A 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,056

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN2024UDH-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN3030-8 package, rated for 20V VDSS, 23mΩ RDS(ON) at VGS = 4.5V, and 5.2A continuous drain current at TA = +25°C. It delivers low conduction loss and fast switching for compact DC-DC converters and load-switching circuits in portable power management.

For engineers reviewing the DMN2024UDH-7 datasheet, DMN2024UDH-7 pinout, DMN2024UDH-7 application, or DMN2024UDH-7 equivalent, key selection criteria include its dual-channel layout, 1.8V gate-threshold capability, 6.5nC total gate charge, and thermal resistance of 71°C/W under enhanced PCB layout - all critical for high-density battery-powered designs.

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a single 3.0mm × 3.0mm U-DFN3030-8 package with exposed thermal pad. Its gate threshold voltage (0.35–1.0V) enables direct drive from 1.8V/2.5V logic, while low Ciss (647pF) and Crss (38pF) support MHz-range switching with minimal Miller effect.

The device features integrated body diodes with 0.65V typical forward voltage at 1A, and is characterized for avalanche energy (8mJ) and pulsed drain current (45A), supporting robust operation in transient-limited power rails and synchronous rectification topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - Maximum blocking voltage for 3.3V/5V input rail protection and buck converter high-side switching.
RDS(ON) 23mΩ @ VGS = 4.5V - Enables ≤115mW conduction loss at 5.2A, critical for thermally constrained mobile PCBs.
ID (continuous) 5.2A @ TA = +25°C - Sustains full-load current in dual-path load switches without forced airflow.
Qg 6.5nC - Reduces gate drive power and allows use of low-current GPIOs or small drivers in space-constrained systems.
Ciss 647pF - Limits capacitive loading on gate drivers and supports stable 1–2MHz PWM operation in point-of-load regulators.
TJ range −55°C to +150°C - Qualified for extended industrial and automotive cabin ambient conditions without derating.

Pinout & Package

Package: U-DFN3030-8, 3.0mm × 3.0mm × 0.6mm, thermally enhanced with exposed copper pad (Pin #1 ID marked).

Pin/Terminal Circuit Role Design Meaning
1 (S1) Source 1 Low-side return path for Channel 1; tied to ground plane via thermal pad for optimal RθJC = 14°C/W.
2 (G1) Gate 1 Control terminal for Channel 1; accepts 1.8V–10V logic; ESD-protected (HBM >2kV).
3 (D1/D2) Drain 1 / Drain 2 common Shared drain node connecting both channels - enables parallel output or half-bridge configuration with external isolation.
4 (G2) Gate 2 Independent control terminal for Channel 2; electrically isolated from G1 for differential or staggered timing.
5 (S2) Source 2 Separate return path for Channel 2; allows independent current sensing or floating load driving.
6–8 (Thermal Pad) Exposed Copper Pad Primary heat dissipation path; must be soldered to ≥1in² 2oz copper for 1.76W PD rating.

Key Features

Feature Design Value
Ultra-low RDS(ON) at 1.8V drive 34mΩ @ VGS = 1.8V - Enables direct interface with ultra-low-voltage microcontrollers (e.g., ARM Cortex-M0+).
Matched dual-channel characteristics ≤5% RDS(ON) mismatch between channels - ensures balanced current sharing in redundant or paralleled power paths.
Low Qgd/Qgs ratio 1.7nC / 1.1nC = 1.55 - Minimizes Miller-induced shoot-through risk in synchronous buck high-side switching.
ESD-protected gate HBM >2kV - Eliminates need for external gate protection in handheld and wearable assembly lines.
Green, halogen-free construction <900ppm Br, <900ppm Cl, <1000ppm Sb - Meets IPC-1752A Tier 1 reporting and EU SCIP database requirements.

Applications

USB-C Power Delivery Switch Wireless Charging Transmitter

Use Scenario: Dual-path 5V/9V/15V input selection and reverse-blocking in USB-C PD sink controllers.

IC Role / Device Role: Dual N-channel load switch providing independent enable control and bidirectional fault isolation.

Use Value: 23mΩ RDS(ON) limits voltage drop to <120mV at 5A, preserving PD negotiation margin; shared drain simplifies PCB routing.

Use Scenario: Synchronous rectification and resonant tank switching in 15W Qi v1.2.4 transmitters.

IC Role / Device Role: High-frequency half-bridge driver with integrated body diode for ZVS-assisted switching.

Use Value: 647pF Ciss and 38pF Crss reduce gate drive losses at 200–300kHz; 150°C TJ rating sustains thermal cycling in enclosed enclosures.

Smartphone Battery Protection Industrial IoT Sensor Node Power Rail

Use Scenario: Overcurrent and short-circuit protection between Li-ion cell and system PMIC in mobile platforms.

IC Role / Device Role: Dual-channel eFuse with independent trip detection and fast turn-off (<1μs).

Use Value: 45A pulsed IDM withstands inrush surges; 1.0V VGS(TH) max ensures reliable turn-on even with aged battery voltage sag.

Use Scenario: Low-power always-on rail switching for BLE/Wi-Fi modules and environmental sensors in edge nodes.

IC Role / Device Role: Dual independent load switch enabling selective power gating of subsystems.

Use Value: 1.8V logic compatibility eliminates level-shifter requirement; 10µA IDSS leakage preserves battery life over multi-year deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2024LSD-7 Same die, SO-8 package (larger footprint, higher RθJA = 62°C/W), no thermal pad. Better suited for prototyping or legacy through-hole-compatible layouts; lower power density than U-DFN3030-8. Select when board reworkability or hand-soldering is prioritized over size and thermal performance.
SI6926ADQ-T1-GE3 20V dual N-ch, but RDS(ON) = 30mΩ @ 4.5V, Qg = 8.5nC, and no avalanche rating. Lacks specified EAS (8mJ) and 45A IDM; less robust in surge-prone industrial inputs. Choose only if cost sensitivity outweighs need for transient ruggedness and sub-25mΩ conduction loss.

Compared with DMN2024UDH-7, DMN2024LSD-7 trades miniaturization for assembly flexibility, while SI6926ADQ-T1-GE3 sacrifices avalanche capability and on-resistance for broader distributor availability - making DMN2024UDH-7 optimal for space- and reliability-critical battery-fed systems.

Availability

DMN2024UDH-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, wireless charging transmitters, and battery-protected portable electronics requiring stable component supply across production lifecycles.

Supply support for DMN2024UDH-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in certified IATF 16949 facilities.

The DMN2024UDH-7 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-voltage power switching in space-constrained consumer and industrial applications - emphasizing RDS(ON) optimization, gate-drive compatibility, and thermal resilience.

FAQ

What is the maximum safe operating temperature for DMN2024UDH-7?

The DMN2024UDH-7 has a junction temperature range of −55°C to +150°C. Under steady-state conditions with the recommended 1-inch square copper pad, it achieves 1.76W power dissipation at TA = +25°C. Derating begins at 71°C/W above ambient, requiring thermal simulation for enclosure-specific limits.

Can DMN2024UDH-7 be used in a synchronous buck converter high-side position?

No - DMN2024UDH-7 is a dual N-channel MOSFET with common-drain topology and no integrated bootstrap diode or level-shifting circuitry. It is designed for low-side switching, load switching, or half-bridge configurations where external gate drive and bootstrap management are provided.

Does DMN2024UDH-7 support 1.8V logic-level gate drive?

Yes - its gate threshold voltage ranges from 0.35V to 1.0V, and RDS(ON) is specified down to 34mΩ at VGS = 1.8V with ID = 3.5A. This enables direct drive from 1.8V I/O banks of modern microcontrollers without level shifters.

Is the thermal pad of DMN2024UDH-7 electrically connected to any internal node?

No - the exposed thermal pad (Pins 6–8) is electrically isolated and intended solely for thermal conduction. It must be soldered to a dedicated PCB copper pour connected to system ground or left floating per layout requirements; no internal silicon connection exists.

DMN2024UDH-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerUDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
5.2A (Ta)
Rds On (Max) @ Id, Vgs:
23mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
647pF @ 10V
Power - Max:
950mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN3030-8

DMN2024UDH-7 FAQ

1.How can I place an order for DMN2024UDH-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2024UDH-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2024UDH-7 reliable?

The price and inventory of DMN2024UDH-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2024UDH-7 is usually 5 days.

3.What payment methods are accepted for DMN2024UDH-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2024UDH-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2024UDH-7?

DMN2024UDH-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2024UDH-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2024UDH-7?

For technical support, including DMN2024UDH-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2024UDH-7 requirements.

6.How does Aetrix verify that DMN2024UDH-7 is sourced from the original manufacturer or authorized distributors?

All DMN2024UDH-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2024UDH-7 meets industry standards.

7.What is the process for return or replacement of DMN2024UDH-7?

All DMN2024UDH-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2024UDH-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2024UDH-7 part is unused and in its original packaging.

Return procedure for DMN2024UDH-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2024UDH-7 Tags

  • DMN2024UDH-7
  • DMN2024UDH-7 PDF
  • DMN2024UDH-7 Datasheet
  • DMN2024UDH-7 Specifications
  • DMN2024UDH-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN2024UDH-7
  • Buy DMN2024UDH-7
  • DMN2024UDH-7 Price
  • DMN2024UDH-7 Distributor
  • DMN2024UDH-7 Supplier
  • DMN2024UDH-7 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER