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Diodes Incorporated DMN2024UFDF-13
- Part No.:
- DMN2024UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2024UFDF-13.pdf
- Description:
- MOSFET N-CH 20V 7.1A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,658
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Product details
Overview
DMN2024UFDF from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in a U-DFN2020-6 package, optimized for low RDS(ON) and fast switching. It delivers 7.1A continuous drain current at VGS = 4.5V with 22mΩ on-resistance, ESD-protected gate, and 0.6mm profile-used in compact DC-DC converters and battery management systems.
For engineers reviewing the DMN2024UFDF datasheet, DMN2024UFDF pinout, DMN2024UFDF application, or DMN2024UFDF equivalent, key selection criteria include gate threshold voltage (0.5–1.0V), thermal resistance (75°C/W with copper pad), RDS(ON) vs. VGS behavior down to 1.5V, and U-DFN2020-6 layout compatibility for high-density power stages.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low gate charge (6.5nC at VGS = 4.5V) and fast switching (tR = 140ns, tF = 434ns), enabling high-frequency synchronous buck operation. Its 1.5V gate drive capability supports direct interfacing with 1.8V logic and low-voltage microcontrollers.
The device integrates an intrinsic body diode with VSD = 0.7–1.0V at 5A and exhibits normalized RDS(ON) variation of ≤1.6× across –55°C to +150°C, ensuring stable conduction in thermally constrained environments like portable power banks and USB-C PD adapters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum blocking voltage for 3.3V/5V input rail switching and single-cell Li-ion (4.2V) system protection. |
| RDS(ON) | 22mΩ @ VGS = 4.5V - Enables <150mW conduction loss at 7.1A, critical for >95% efficiency in 1MHz buck converters. |
| Qg | 6.5nC @ VGS = 4.5V - Reduces gate drive power and allows use with low-current drivers in space-constrained PMICs. |
| VGS(TH) | 0.5–1.0V - Ensures reliable turn-on with 1.2V–1.8V I/O domains, eliminating need for level shifters in ultra-low-voltage systems. |
| RθJA | 75°C/W - Achieved with 1-inch² copper pad; enables 1.67W dissipation at +70°C ambient without forced cooling. |
| Ciss | 647pF - Low input capacitance minimizes Miller effect and improves noise immunity in high-dv/dt environments. |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0mm × 2.0mm footprint, 0.6mm height, NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Primary current return path; tied to PCB ground plane for thermal and EMI control in high-side switch configurations. |
| Pin 2 (Gate) | Control input (G) | ESD-protected gate node requiring <100Ω series resistor to suppress ringing during 10MHz+ switching. |
| Pin 3 (Drain) | Power output (D) | High-current drain connection; exposed pad (Pin 4/5/6) must be soldered to thermal pad for RθJC = 16°C/W performance. |
| Pins 4–6 (Exposed Pad) | Thermal & electrical ground | Integral thermal path to PCB; electrically connected to source-must be routed as low-impedance ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 | 0.6mm max height enables stacking under connectors or within <1.0mm board gaps in wearables and TWS earbuds. |
| 1.5V gate drive support | RDS(ON) = 50mΩ @ VGS = 1.5V allows direct interface with 1.8V GPIOs without external level-shifting circuitry. |
| ESD-protected gate | HBM rating ≥2kV per JESD22-A114 ensures robustness against handling discharge during SMT assembly and field rework. |
| Green, halogen-free construction | <900ppm Br+Cl total, <1000ppm Sb - meets IPC-1752A reporting requirements for automotive and medical OEM compliance. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Module |
|---|---|
|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs for portable medical devices. IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path with fast fault response (<10μs) via integrated body diode reverse recovery (tRR = 245ns). Use Value: 22mΩ RDS(ON) limits voltage drop to <157mV at 7.1A, preserving battery runtime while enabling compact 2.0mm × 2.0mm PCB area allocation. |
Use Scenario: Synchronous rectification in 20W USB-C PD buck-boost converter for smartphones and tablets. IC Role / Device Role / Timing Role: High-efficiency power FET operating at 500kHz–1MHz with Qgd/Qgs ratio of 1.55 to minimize shoot-through risk during dead-time transitions. Use Value: 6.5nC total gate charge reduces driver losses by 35% versus comparable 30V MOSFETs, directly improving thermal margin in sealed enclosures. |
| Wireless Charging Transmitter | Industrial Sensor Node Power Regulator |
|
Use Scenario: Half-bridge switching stage in 15W Qi-compliant wireless charging transmitters with 125kHz carrier frequency. IC Role / Device Role / Timing Role: Fast-switching N-channel FET paired with complementary P-channel device; Coss = 78pF minimizes capacitive losses at resonance. Use Value: 130°C/W RθJA (minimal pad) and 75°C/W (enhanced pad) allow dual thermal design options-enabling cost-optimized or performance-optimized layouts. |
Use Scenario: Input-stage power switch in battery-powered IIoT sensor nodes requiring 10-year shelf life and -40°C cold-start capability. IC Role / Device Role / Timing Role: Cold-temperature-stable switch with VGS(TH) shift <±0.1V from –40°C to +85°C, ensuring consistent turn-on in unheated outdoor deployments. Use Value: RDS(ON) increases only 1.4× at 125°C (vs. 25°C), maintaining <300mW loss at full load-critical for passive thermal management in sealed housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2026UFDF-13 | RDS(ON) = 26mΩ @ VGS = 4.5V; higher threshold (0.6–1.2V); same U-DFN2020-6 package | Slightly lower efficiency at high current but improved noise immunity in noisy industrial environments | Select when gate drive margin exceeds 0.3V and thermal budget permits 18% higher conduction loss. |
| AO3414 | SO-23 package; RDS(ON) = 28mΩ @ VGS = 4.5V; no ESD protection; 1.1mm height | Larger footprint (2.9mm × 1.6mm) and inferior thermal performance (RθJA = 150°C/W) | Choose only if legacy SO-23 layout reuse is mandatory and peak current remains ≤5A. |
Compared with DMN2024UFDF, DMN2026UFDF trades 18% higher RDS(ON) for enhanced gate noise margin, while AO3414 sacrifices thermal density and ESD robustness for SO-23 compatibility-neither offers the 0.6mm height and 1.5V drive capability essential for next-gen portable power designs.
Availability
DMN2024UFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and wireless charging transmitters requiring stable component supply, traceable lot control, and long-term lifecycle assurance.
Supply support for DMN2024UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, Amkor, and its own facilities.
This MOSFET belongs to Diodes' Ultra-Small Signal and Power FET product line, engineered specifically for space-constrained, high-efficiency power conversion in portable and battery-operated electronics.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The DMN2024UFDF supports 5.6A continuous drain current at TA = +70°C with VGS = 4.5V, based on its 1.67W power dissipation rating and 75°C/W thermal resistance when mounted on a 1-inch² copper pad. Derating follows the RθJA curve in Figure 13 of the datasheet.
Is this MOSFET qualified for automotive applications?
No-DMN2024UFDF is not AEC-Q101 qualified. Diodes Incorporated explicitly states that automotive-grade versions require PPAP capability and IATF 16949 manufacturing; this part is intended for commercial and industrial applications only, with operating temperature range of –55°C to +150°C.
How should the exposed thermal pad be connected on the PCB?
The exposed pad (Pins 4–6) must be soldered to a solid copper thermal pad on the PCB, sized per the recommended layout (X3 = 1.700mm, Y4 = 2.300mm). It is internally connected to the source terminal, so it must be routed as part of the source net-not left floating or grounded separately.
Does the device include integrated gate protection beyond ESD?
Yes-the internal schematic shows a gate protection diode and ESD clamp structure rated to ≥2kV HBM. However, no integrated avalanche energy rating is specified beyond the single-pulse 8mJ EAS limit; external TVS or snubbers are required for inductive switching transients exceeding this value.
DMN2024UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.8 nC @ 10 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 647 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 960mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN2024UFDF-13 FAQ
1.How can I place an order for DMN2024UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2024UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2024UFDF-13 reliable?
The price and inventory of DMN2024UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2024UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMN2024UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2024UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2024UFDF-13?
DMN2024UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2024UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2024UFDF-13?
For technical support, including DMN2024UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2024UFDF-13 requirements.
6.How does Aetrix verify that DMN2024UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMN2024UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2024UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMN2024UFDF-13?
All DMN2024UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2024UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2024UFDF-13 part is unused and in its original packaging.
Return procedure for DMN2024UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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