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Diodes Incorporated DMN2024UFDF-7

Part No.:
DMN2024UFDF-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMN2024UFDF-7.pdf
Description:
MOSFET N-CH 20V 7.1A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:495

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Product details

Overview

DMN2024UFDF from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in a U-DFN2020-6 package, optimized for low RDS(ON) and fast switching in compact power stages. It delivers 7.1A continuous drain current at VGS = 4.5V with 22mΩ on-resistance, features ESD-protected gate, and supports battery management and DC-DC converter applications.

For engineers reviewing the DMN2024UFDF datasheet, DMN2024UFDF pinout, DMN2024UFDF application, or DMN2024UFDF equivalent, key selection criteria include its 1.5V–4.5V gate threshold range, 0.6mm profile, 4mm² footprint, thermal resistance of 75°C/W (with copper pad), and compatibility with low-voltage logic-level drive in space-constrained portable and automotive subsystems.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low gate charge (6.5nC at VGS = 4.5V) and fast switching (tD(ON) = 98ns, tF = 434ns), enabling high-frequency operation in synchronous buck converters. Its RDS(ON) remains stable across −55°C to +150°C junction temperature, with normalized variation ≤1.6× at 150°C.

The device integrates an intrinsic body diode with VSD = 0.7V at IS = 5A and QRR = 149nC, supporting efficient reverse recovery in flyback and OR-ing configurations. Gate protection includes ±10V VGSS rating and NiPdAu-plated terminals for robust solderability and reliability.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - Maximum blocking voltage for 1-cell Li-ion and 5V rail switching
RDS(ON) 22mΩ @ VGS = 4.5V - Enables <100mW conduction loss at 7A in 12mm² PCB area
ID (max) 7.1A @ TA = 25°C - Sustains peak load current in portable power switches without derating
Qg 6.5nC @ VGS = 4.5V - Reduces gate driver power and enables >1MHz PWM operation
RθJA 75°C/W - Achieved with 1-inch² 2oz copper pad; allows 1.67W dissipation at 70°C ambient
VGS(TH) 0.5–1.0V - Ensures turn-on with 1.8V/2.5V/3.3V microcontroller GPIOs
Ciss 647pF - Limits Miller effect in high-side switching; supports clean gate waveform integrity

Pinout & Package

U-DFN2020-6 (Type F) package: 2.0mm × 2.0mm × 0.6mm, bottom-exposed thermal pad, RoHS-compliant NiPdAu plating, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal; accepts logic-level drive; ESD-protected with integrated diode
2 (S) Source Reference node for gate drive; connected to power ground or low-side return path
3 (D) Drain High-side output node; ties to input rail or inductor switch node in buck topology
4 (S) Source Second source connection; paralleled with Pin 2 to reduce source inductance and improve switching stability
5 (D) Drain Second drain connection; paralleled with Pin 3 to lower RDS(ON) and thermal impedance
6 (EP) Exposed Pad Thermal and electrical connection to PCB ground plane; mandatory for rated power dissipation

Key Features

Feature Design Value
Low-profile U-DFN2020-6 0.6mm height enables stacking under connectors or in ultra-thin battery packs
Logic-level gate threshold VGS(TH) ≤ 1.0V ensures full enhancement with 1.8V I/O rails, eliminating level shifters
ESD-protected gate ±10V VGSS rating and integrated protection diode prevent latch-up during board handling
Optimized gate charge 6.5nC total gate charge reduces driver losses and enables 2MHz-class switching in GaN-assisted topologies
Green, halogen-free construction <900ppm Br+Cl, <1000ppm Sb; compliant with IPC-1752A material declaration requirements

Applications

Battery Protection Circuit USB-C Power Delivery Switch

Use Scenario: Bidirectional overvoltage/overcurrent protection in single-cell Li-ion battery packs with integrated fuel gauge.

IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; responds within 100ns to fault signals from protection IC.

Use Value: 22mΩ RDS(ON) limits voltage drop to <150mV at 7A, preserving runtime and enabling accurate coulomb counting.

Use Scenario: 5V/9V/15V/20V rail switching in USB-C PD sink adapters with dynamic voltage negotiation.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in buck-boost stage; driven by dedicated PD controller PWM output.

Use Value: 6.5nC Qg and 434ns tF support 500kHz–1MHz operation, reducing output capacitor size by 30% vs. higher-Qg alternatives.

Wireless Earbud Charging Case Automotive Cabin LED Driver

Use Scenario: Input power switching and battery charging path control in compact, thermally constrained earbud cases.

IC Role / Device Role / Timing Role: Dual-function switch managing both charging input isolation and battery-to-load power routing.

Use Value: 0.6mm profile fits beneath 3mm-height battery cells; 75°C/W RθJA prevents thermal shutdown during 2C fast charge pulses.

Use Scenario: Dimmable 12V LED string control in automotive interior lighting modules requiring AEC-Q101 stress qualification.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch driving parallel LED strings with current-sense feedback loop.

Use Value: Stable RDS(ON) across −40°C to +125°C ensures consistent brightness; 12A pulsed rating handles inrush during cold start.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2026UFDF-7 RDS(ON) = 26mΩ @ 4.5V; 6.5A ID; same U-DFN2020-6 package Higher on-resistance increases conduction loss by ~18% at 7A; suitable where cost sensitivity outweighs efficiency Select when BOM cost reduction is prioritized over thermal margin in low-duty-cycle loads
AO3414 RDS(ON) = 28mΩ @ 4.5V; SO-23 package; no exposed thermal pad; RθJA = 150°C/W Larger footprint (2.9mm × 1.6mm) and inferior thermal performance limit use to <3A continuous loads Choose only for legacy SO-23 layouts where re-spinning PCB is prohibitive

Compared with DMN2024UFDF, DMN2026UFDF trades 4mΩ higher RDS(ON) for lower unit cost in identical packaging, while AO3414 sacrifices thermal capability and size for SO-23 compatibility-neither matches the 22mΩ/7.1A/0.6mm combination in U-DFN2020-6.

Availability

DMN2024UFDF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and automotive cabin lighting requiring stable component supply with full traceability and lifecycle continuity.

Supply support for DMN2024UFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

This MOSFET belongs to Diodes' U-DFN logic-level power portfolio, engineered specifically for space-constrained, high-efficiency DC-DC conversion and battery-switching applications in portable and automotive electronics.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN2024UFDF supports 5.6A continuous drain current at TA = +70°C with a 1-inch² 2oz copper pad per datasheet Note 6. This derating reflects thermal limits under real-world PCB conditions-not just junction temperature-but assumes proper layout with the exposed pad fully soldered to ground plane.

Is this MOSFET qualified for automotive applications?

The DMN2024UFDF itself is not AEC-Q101 qualified; however, Diodes offers automotive-grade variants (e.g., DMN2024UFDFQ-7) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening. Standard versions are intended for industrial and consumer applications unless explicitly marked with 'Q' suffix.

Can it be used in a high-side configuration with 3.3V gate drive?

Yes-its VGS(TH) max of 1.0V and RDS(ON) = 26mΩ at VGS = 2.5V ensure reliable enhancement with 3.3V logic. For high-side use, a gate driver with bootstrap or charge-pump capability is required to maintain VGS > 2.5V during 100% duty cycle, as the device lacks integrated level-shifting.

What is the recommended PCB pad layout for thermal performance?

Per Diodes' package outline DS40595 Rev. 8-2, the exposed pad must be connected to a minimum 1-inch² 2oz copper area using ≥4 thermal vias (0.3mm diameter, spaced ≤1mm apart). The suggested pad dimensions are X = 0.400mm, Y = 0.425mm, D2a = 0.38mm, and E2a = 0.70mm-deviations reduce RθJA from 75°C/W to >100°C/W.

DMN2024UFDF-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14.8 nC @ 10 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
647 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
960mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type F)

DMN2024UFDF-7 FAQ

1.How can I place an order for DMN2024UFDF-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2024UFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2024UFDF-7 reliable?

The price and inventory of DMN2024UFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2024UFDF-7 is usually 5 days.

3.What payment methods are accepted for DMN2024UFDF-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2024UFDF-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2024UFDF-7?

DMN2024UFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2024UFDF-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2024UFDF-7?

For technical support, including DMN2024UFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2024UFDF-7 requirements.

6.How does Aetrix verify that DMN2024UFDF-7 is sourced from the original manufacturer or authorized distributors?

All DMN2024UFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2024UFDF-7 meets industry standards.

7.What is the process for return or replacement of DMN2024UFDF-7?

All DMN2024UFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2024UFDF-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2024UFDF-7 part is unused and in its original packaging.

Return procedure for DMN2024UFDF-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2024UFDF-7 Tags

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