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Diodes Incorporated DMN2024UFU-7
- Part No.:
- DMN2024UFU-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
DMN2024UFU-7.pdf
- Description:
- MOSFET 2N-CH 20V 7.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,984
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Product details
Overview
DMN2024UFU-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2030-6 (Type B) package, rated for 20V VDSS, 20.2 mΩ RDS(ON) @ VGS = 4.5V, and 21A continuous drain current at TC = +25°C. It delivers low gate threshold (0.35–0.95V), ESD-protected gate, and optimized switching performance for compact, high-efficiency power stages in portable battery management systems.
For engineers reviewing the DMN2024UFU-7 datasheet, DMN2024UFU-7 pinout, DMN2024UFU-7 application, or DMN2024UFU-7 equivalent, this page provides verified electrical parameters, thermal derating data, package layout details, and validated alternatives for DC-DC converter and load-switch design validation.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single 2.0 × 3.0 mm U-DFN2030-6 (Type B) leadless package with exposed thermal pad. Its low RDS(ON) at 2.5V gate drive enables operation with modern low-voltage controllers and battery-supplied logic.
The device features a gate threshold voltage as low as 0.35V (min), enabling reliable turn-on from 1.8V/2.5V I/O domains, and exhibits 6.5 nC total gate charge at VGS = 4.5V - supporting high-frequency PWM switching up to 1 MHz while minimizing driver losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 2-cell Li-ion or 5V rail applications. |
| RDS(ON) @ VGS = 4.5V | 20.2 mΩ (max) - Enables ≤100 mW conduction loss at 7A output current in buck converter high-side switch. |
| ID Continuous @ TC = +25°C | 21 A - Sustained current capability when mounted on 1-inch² copper pour, suitable for 10–15A power rails. |
| VGS(TH) | 0.35–0.95 V - Ensures full enhancement with 1.2V–1.8V logic-level gate drivers, eliminating need for level shifters. |
| QG @ VGS = 4.5V | 6.5 nC - Low gate charge reduces switching energy and allows use with low-power gate drivers (e.g., TLV170x, MIC442x). |
| RθJA (with 1″² copper) | 73 °C/W - Thermal resistance enables 1.71 W power dissipation at ambient +70°C without active cooling. |
| Ciss | 647 pF - Input capacitance supports stable gate drive loop design with <10 Ω series resistance at 500 kHz–1 MHz switching. |
Pinout & Package
Package: U-DFN2030-6 (Type B), 2.0 mm × 3.0 mm × 0.6 mm, thermally enhanced with exposed drain pad (Pin 6). Molded green compound, RoHS-compliant, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 | Low-side return path for Channel 1; electrically tied to thermal pad in PCB layout for optimal heat transfer. |
| 2 | Gate 1 | Control input for Channel 1; requires ESD-safe routing and <100 pF trace capacitance for stable switching. |
| 3 | Drain 1 | High-current output node for Channel 1; connects to switched rail or inductor node in synchronous buck topology. |
| 4 | Drain 2 | High-current output node for Channel 2; isolated from Drain 1 for dual-phase or independent load switching. |
| 5 | Gate 2 | Control input for Channel 2; independent of Gate 1 for asynchronous or interleaved control schemes. |
| 6 | Source 2 / Thermal Pad | Common source terminal for Channel 2 and primary thermal interface; must be soldered to ≥100 mm² internal copper plane. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) down to 0.35 V enables direct drive from 1.2 V/1.8 V microcontrollers without level-shifting circuitry. |
| ESD-protected gate | HBM rating >2 kV per JEDEC JESD22-A114 - eliminates need for external gate protection diodes in handheld designs. |
| Thermally optimized U-DFN2030-6 | Exposed drain pad and 8.9 °C/W RθJC allow >1.5 W dissipation with minimal board area in space-constrained battery packs. |
| Halogen- and antimony-free "Green" construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752a Class 3 reporting requirements for automotive and medical OEMs. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Dual-MOSFET configuration in smart battery packs for overcurrent and short-circuit protection, with independent channel control for charge/discharge paths. IC Role / Device Role: High-side and low-side switch pair controlling bidirectional current flow between cell stack and system load/charger. Use Value: 20.2 mΩ RDS(ON) limits voltage drop to <150 mV at 7.5 A, preserving battery runtime and enabling accurate coulomb counting. |
Use Scenario: Load switching in USB-C PD sink applications where 5–20 V input must be safely connected to 3.3 V/5 V system rails. IC Role / Device Role: Dual-channel reverse-polarity and overcurrent protected switch managing VBUS routing and fault isolation. Use Value: Independent gate control allows staggered turn-on to suppress inrush current; ESD protection guards against hot-plug transients. |
| DC-DC Synchronous Buck Converter | Portable Device Power Rail Sequencing |
|
Use Scenario: Integrated high-side/low-side switch in 1–3 A buck regulators for PMIC subsystems in wearables and IoT sensors. IC Role / Device Role: Power stage switch pair replacing discrete MOSFETs and reducing footprint by >40% vs. SO-8 solutions. Use Value: 6.5 nC QG and 1024 ns tr support 1 MHz operation with <5% duty-cycle loss, improving light-load efficiency. |
Use Scenario: Controlled power-up sequencing of multiple voltage rails (e.g., 1.2 V core, 3.3 V I/O, 5 V peripheral) in FPGA-based edge devices. IC Role / Device Role: Independent channel enable switches providing timed, low-noise rail activation with programmable delay via RC networks. Use Value: Matched VGS(TH) across channels ensures consistent turn-on timing; low RDS(ON) minimizes sequencing-induced voltage droop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2024LFG-7 | Same die, but in leaded SOT-23-6 package; RDS(ON) identical, but RθJA = 155 °C/W (no thermal pad). | Suitable for prototyping or low-power (<1 A) applications where reworkability matters more than thermal density. | Select when manual soldering, test fixture compatibility, or legacy footprint reuse is required. |
| AOB2024L | 20 V, 18 mΩ @ 4.5 V, but larger 3×3 mm DFN package; QG = 9.5 nC; no specified VGS(TH) min. | Better conduction loss at high current, but higher gate drive demand and less suitable for 1.8 V logic interfaces. | Prefer for fixed 3.3 V gate drive systems needing lower RDS(ON) at cost of board area and gate energy. |
Compared with DMN2024UFU-7, DMN2024LFG-7 trades thermal performance for assembly flexibility, while AOB2024L improves conduction loss at the expense of gate drive compatibility and footprint size - making DMN2024UFU-7 optimal for space- and voltage-constrained battery-powered designs.
Availability
DMN2024UFU-7 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and DC-DC converter designs requiring stable component supply, tight parametric consistency, and long-term production continuity.
Supply support for DMN2024UFU-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.
The DMN2024UFU-7 belongs to Diodes' PowerMOS™ family, engineered specifically for high-density, low-voltage power switching in portable and battery-operated equipment where gate drive voltage headroom is limited.
FAQ
What is the maximum safe operating junction temperature for DMN2024UFU-7?
The absolute maximum junction temperature is +150°C, and the device is characterized for guaranteed operation across –55°C to +150°C. Derating begins at TJ > 125°C per Figure 6 and Figure 7, where RDS(ON) increases ~20% at 150°C versus 25°C for VGS = 4.5V.
Can DMN2024UFU-7 be used in a single-channel configuration with one channel unused?
Yes - either channel may be left unconnected without affecting reliability. The unused gate must be tied to its respective source (not floating), and the unused drain should remain open or pulled to a defined potential. No internal coupling exists between channels beyond shared thermal mass.
Is the U-DFN2030-6 (Type B) package compatible with standard reflow profiles?
Yes - it is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard Pb-free reflow profiles (peak 260°C, 20–40 sec above 217°C). The NiPdAu-plated terminals ensure robust solderability per MIL-STD-202 Method 208.
Does DMN2024UFU-7 support avalanche energy handling in inductive switching applications?
Yes - it is rated for 12 A IAS and 8 mJ EAS under low-frequency, single-pulse conditions (L = 0.1 mH). This supports limited unclamped inductive switching, but external snubbers or clamps are recommended for repetitive or high-di/dt loads.
DMN2024UFU-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Ta), 21A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20.2mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 647pF @ 10V
- Power - Max:
- 810mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2030-6 (Type B)
DMN2024UFU-7 FAQ
1.How can I place an order for DMN2024UFU-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2024UFU-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2024UFU-7 reliable?
The price and inventory of DMN2024UFU-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2024UFU-7 is usually 5 days.
3.What payment methods are accepted for DMN2024UFU-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2024UFU-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2024UFU-7?
DMN2024UFU-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2024UFU-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2024UFU-7?
For technical support, including DMN2024UFU-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2024UFU-7 requirements.
6.How does Aetrix verify that DMN2024UFU-7 is sourced from the original manufacturer or authorized distributors?
All DMN2024UFU-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2024UFU-7 meets industry standards.
7.What is the process for return or replacement of DMN2024UFU-7?
All DMN2024UFU-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2024UFU-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2024UFU-7 part is unused and in its original packaging.
Return procedure for DMN2024UFU-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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