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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN2024UTS-13

Name: DMN2024UTS-13
Brand: Diodes Incorporated
SKU: DMN2024UTS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2024UTS-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-TSSOP (0.173", 4.40mm Width)

Datasheet:: DMN2024UTS-13.pdf

Description:: MOSFET 2N-CH 20V 6.2A 8TSSOP

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Product details

Overview

DMN2024UTS from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSSOP-8 package, rated for 20V V_DSS, 24mΩ R_DS(ON) at V_GS = 4.5V, and 6.2A continuous drain current at T_A = +25°C. It delivers low gate threshold (0.35–0.95V), ESD-protected gate, and optimized switching performance for compact DC-DC converters in portable battery-powered systems.

For engineers reviewing the DMN2024UTS datasheet, DMN2024UTS pinout, DMN2024UTS application, or DMN2024UTS equivalent, key selection criteria include its dual-N configuration, 2.5V turn-on capability, thermal resistance of 90°C/W (with enhanced pad layout), and suitability for synchronous buck topologies requiring low conduction loss and fast switching transitions.

Technical Context

This device integrates two matched N-channel MOSFETs in a single TSSOP-8 package, enabling half-bridge or dual-switch configurations without discrete pairing. Its low 0.35V minimum V_GS(TH) ensures reliable turn-on with 2.5V logic-level drivers, while R_DS(ON) remains ≤28mΩ at that voltage - critical for high-efficiency step-down regulation below 3.3V input rails.

The MOSFET features fully characterized dynamic parameters: Q_G = 6.5nC at V_GS = 4.5V, C_iss = 647pF, and t_F = 434ns, supporting switching frequencies up to 2MHz in space-constrained power stages. The integrated body diode exhibits V_SD = 0.7V at 1A, with Q_RR = 149nC, indicating moderate reverse recovery behavior suitable for non-critical synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20V - Supports input rails up to 18V with margin for transients in USB PD, Li-ion battery, and industrial 12V systems.
R_DS(ON) @ V_GS = 4.5V	24mΩ max - Enables ≤150mW conduction loss at 6.2A, reducing thermal load in thermally constrained PCB layouts.
I_D Continuous @ T_A = +25°C	6.2A - Sustains full-load operation in 3A–5A buck converters without forced airflow or heatsinking.
V_GS(TH)	0.35–0.95V - Guarantees robust gate drive compatibility with 1.8V/2.5V/3.3V microcontrollers and PMICs.
Q_G @ V_GS = 4.5V	6.5nC - Minimizes gate drive power and enables efficient operation with low-side drivers like TC4427 or UCC27517.
R_θJA (enhanced layout)	90°C/W - Achieved with 1-inch² copper pour; allows 1.39W dissipation before exceeding 150°C junction temperature.
C_iss	647pF - Sets Miller plateau timing and influences gate drive strength requirements in high-frequency designs.

Pinout & Package

TSSOP-8 package: 3mm × 4.4mm footprint, 0.65mm pitch, matte tin-plated copper leadframe, JEDEC-compliant moisture sensitivity level 3, UL 94V-0 molded plastic body.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source 1 / Drain 1 / Gate 1	Left-side MOSFET channel: Pin 1 = S1 (common source tie point), Pin 2 = D1, Pin 3 = G1.
4, 5, 6	Source 2 / Drain 2 / Gate 2	Right-side MOSFET channel: Pin 4 = S2, Pin 5 = D2, Pin 6 = G2 - independent control, no internal connection between gates or drains.
7, 8	Drain 1 / Source 1 (shared)	Pins 7 and 8 are internally bonded to D1 and S1 respectively - confirmed by top-view pin diagram and "N2024U" marking orientation per DS40994 Rev. 5-2 p.2.

Key Features

Feature	Design Value
Dual N-channel topology	Enables compact half-bridge or dual-phase synchronous rectifier implementation without external matching or layout skew.
2.5V logic-compatible V_GS(TH)	Eliminates need for gate boosters or level shifters when driven directly by low-voltage MCUs or PMICs.
ESD-protected gate (HBM >2kV)	Reduces risk of assembly-line damage and improves field reliability in unshielded consumer electronics environments.
Halogen- and antimony-free "Green" construction	Meets IEC 61249-2-21 and IPC-4101D requirements for environmentally restricted electronics manufacturing.
Thermally enhanced R_θJA = 90°C/W	Permits higher sustained power delivery on standard FR-4 with 1-inch² copper area - verified per Note 6 in datasheet.

Applications

Battery Protection Circuit

Synchronous Buck Converter

Use Scenario: Dual-MOSFET back-to-back configuration for Li-ion cell over-discharge and reverse-current blocking in power banks and wearables.

IC Role / Device Role / Timing Role: Acts as bidirectional load switch with independent gate control; body diodes prevent reverse current flow during sleep mode.

Use Value: 24mΩ R_DS(ON) limits voltage drop to <150mV at 6A, preserving battery runtime; low V_GS(TH) ensures clean turn-off at MCU GPIO low state.

Use Scenario: High-density 3.3V/5V output stage in FPGA or SoC power supplies where board space is limited to <100mm².

IC Role / Device Role / Timing Role: Upper and lower switches in synchronous buck topology operating at 1–2MHz switching frequency.

Use Value: Low Q_G (6.5nC) and C_iss (647pF) reduce gate drive losses; matched R_DS(ON) minimizes duty-cycle asymmetry and improves efficiency above 92%.

USB-C Power Delivery Module

Industrial Sensor Node Power Rail

Use Scenario: Input protection and VBUS switching in 20V-rated USB-C PD sink applications with dynamic voltage negotiation.

IC Role / Device Role / Timing Role: Dual-channel switch controlling path from Type-C connector to system rail and protection IC, with independent enable logic.

Use Value: 20V V_DSS rating provides 2V margin over USB PD 20V profile; ESD protection prevents latch-up during hot-plug events.

Use Scenario: Always-on 3.3V supply for LoRaWAN or NB-IoT sensor nodes powered by primary lithium batteries (e.g., CR123A).

IC Role / Device Role / Timing Role: Low-quiescent-current load switch enabling firmware-controlled power gating of RF and sensing subsystems.

Use Value: Sub-1V gate threshold allows full turn-on with aging battery voltages down to 2.7V; 1.6A body diode rating supports controlled discharge paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2026UTS-13	R_DS(ON) = 26mΩ @ 4.5V (vs. 24mΩ); identical pinout, package, and V_DSS.	Slightly higher conduction loss - acceptable where thermal margin exists but not preferred for 6A continuous loads.	Select only if DMN2024UTS is unavailable and design tolerates ~8% higher I²R loss at full load.
SI6926ADQ-T1-GE3	Single-die dual-N with 22mΩ R_DS(ON) @ 4.5V but higher Q_G (10.5nC); same TSSOP-8 footprint.	Higher gate charge increases driver stress and switching loss at >1MHz - less optimal for ultra-high-frequency buck converters.	Prefer when lowest R_DS(ON) is critical and gate drive capability permits higher Q_G.

Compared with DMN2024UTS, DMN2026UTS trades minimal R_DS(ON) increase for identical drive compatibility, while SI6926ADQ offers lower on-resistance at the cost of higher gate charge - making DMN2024UTS the balanced choice for 1–2MHz, 3–6A synchronous buck stages with 2.5–3.3V logic control.

Availability

DMN2024UTS is available at Aetrix Electronics and suitable for battery management systems, portable DC-DC converters, and USB-C power delivery modules requiring stable component supply across multi-year production cycles.

Supply support for DMN2024UTS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in certified IATF 16949 facilities.

The DMN2024UTS belongs to Diodes' logic-level power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion in battery-powered and USB-powered electronics.

FAQ

What is the maximum safe operating junction temperature for DMN2024UTS?

The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation must remain within this limit under all conditions - including transient loads - using the provided transient thermal resistance curve (Figure 13) and appropriate PCB copper area per Note 6 (1-inch² pour for R_θJA = 90°C/W).

Can DMN2024UTS be used in a synchronous rectifier configuration?

Yes - its low R_DS(ON) and matched dual-N structure support synchronous rectification in flyback or buck-boost topologies. However, the body diode's Q_RR = 149nC and t_RR = 245ns require careful dead-time control to avoid shoot-through; gate drive sequencing must ensure turn-off before complementary FET turn-on.

Is the DMN2024UTS pinout compatible with standard TSSOP-8 footprints?

Yes - it uses JEDEC-standard TSSOP-8 mechanical dimensions (3.025mm × 4.425mm, 0.65mm pitch) with pin 1 marked by a dot or notch. The suggested pad layout in Diodes' package outline document (PN: TSSOP-8) matches IPC-7351B density Level A, ensuring reliable reflow soldering on standard SMT lines.

Does DMN2024UTS meet automotive qualification standards?

No - the datasheet states that automotive-qualified versions (AEC-Q101) require explicit contact with Diodes Incorporated or local representatives. Standard DMN2024UTS-13 is rated for industrial temperature range (−55°C to +150°C) but lacks PPAP documentation, IATF 16949 traceability per lot, or AEC-Q101 stress test reporting.

DMN2024UTS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-TSSOP (0.173", 4.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Ta), 15.2A (Tc)

Rds On (Max) @ Id, Vgs:: 24mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 647pF @ 10V

Power - Max:: 890mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSSOP

DMN2024UTS-13 FAQ

1.How can I place an order for DMN2024UTS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2024UTS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2024UTS-13 reliable?

The price and inventory of DMN2024UTS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2024UTS-13 is usually 5 days.

3.What payment methods are accepted for DMN2024UTS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2024UTS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2024UTS-13?

DMN2024UTS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2024UTS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2024UTS-13?

For technical support, including DMN2024UTS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2024UTS-13 requirements.

6.How does Aetrix verify that DMN2024UTS-13 is sourced from the original manufacturer or authorized distributors?

All DMN2024UTS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2024UTS-13 meets industry standards.

7.What is the process for return or replacement of DMN2024UTS-13?

All DMN2024UTS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2024UTS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2024UTS-13 part is unused and in its original packaging.

Return procedure for DMN2024UTS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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